JP2019169825A5 - - Google Patents

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Publication number
JP2019169825A5
JP2019169825A5 JP2018055446A JP2018055446A JP2019169825A5 JP 2019169825 A5 JP2019169825 A5 JP 2019169825A5 JP 2018055446 A JP2018055446 A JP 2018055446A JP 2018055446 A JP2018055446 A JP 2018055446A JP 2019169825 A5 JP2019169825 A5 JP 2019169825A5
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JP
Japan
Prior art keywords
gate
semiconductor device
data
transistor
storage unit
Prior art date
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Abandoned
Application number
JP2018055446A
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English (en)
Japanese (ja)
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JP2019169825A (ja
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Publication date
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Priority to JP2018055446A priority Critical patent/JP2019169825A/ja
Priority claimed from JP2018055446A external-priority patent/JP2019169825A/ja
Priority to US16/137,854 priority patent/US20190296730A1/en
Publication of JP2019169825A publication Critical patent/JP2019169825A/ja
Publication of JP2019169825A5 publication Critical patent/JP2019169825A5/ja
Abandoned legal-status Critical Current

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JP2018055446A 2018-03-23 2018-03-23 半導体装置及び電力変換装置 Abandoned JP2019169825A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018055446A JP2019169825A (ja) 2018-03-23 2018-03-23 半導体装置及び電力変換装置
US16/137,854 US20190296730A1 (en) 2018-03-23 2018-09-21 Semiconductor device and power convertor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018055446A JP2019169825A (ja) 2018-03-23 2018-03-23 半導体装置及び電力変換装置

Publications (2)

Publication Number Publication Date
JP2019169825A JP2019169825A (ja) 2019-10-03
JP2019169825A5 true JP2019169825A5 (https=) 2020-03-05

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ID=67985871

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JP2018055446A Abandoned JP2019169825A (ja) 2018-03-23 2018-03-23 半導体装置及び電力変換装置

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US (1) US20190296730A1 (https=)
JP (1) JP2019169825A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109804230B (zh) * 2017-04-13 2021-06-04 富士电机株式会社 温度检测装置以及具备其的功率转换装置
DE112020007545T5 (de) * 2020-08-25 2023-06-15 Mitsubishi Electric Corporation Treiber-steuerungsschaltung für leistungshalbleiter-element, leistungshalbleiter-modul sowie stromrichter
JP7414700B2 (ja) 2020-12-01 2024-01-16 株式会社東芝 半導体装置
US12126253B2 (en) * 2022-01-19 2024-10-22 Dialog Semiconductor Inc. In-circuit detection of early failure of power switch transistors in switching power converters
JP2025035370A (ja) 2023-09-01 2025-03-13 株式会社東芝 駆動装置および半導体装置
US20260074607A1 (en) * 2024-09-06 2026-03-12 Renesas Design (UK) Limited Advanced Gate Driver for Improved EMI Performance During MOSFET Turn-on

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7035064B2 (en) * 1998-05-29 2006-04-25 Semikron Elektronik Gmbh Method and circuit arrangement with adaptive overload protection for power switching devices
US9030054B2 (en) * 2012-03-27 2015-05-12 Raytheon Company Adaptive gate drive control method and circuit for composite power switch

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