JP2019169707A - オプトエレクトロニクス部品 - Google Patents
オプトエレクトロニクス部品 Download PDFInfo
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- JP2019169707A JP2019169707A JP2019051677A JP2019051677A JP2019169707A JP 2019169707 A JP2019169707 A JP 2019169707A JP 2019051677 A JP2019051677 A JP 2019051677A JP 2019051677 A JP2019051677 A JP 2019051677A JP 2019169707 A JP2019169707 A JP 2019169707A
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- conversion element
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 37
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 77
- 238000006243 chemical reaction Methods 0.000 claims abstract description 75
- 239000002245 particle Substances 0.000 claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 239000011159 matrix material Substances 0.000 claims abstract description 56
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 37
- -1 polysiloxane Polymers 0.000 claims abstract description 28
- 230000005855 radiation Effects 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 abstract description 20
- 239000000463 material Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 8
- 238000004132 cross linking Methods 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Abstract
Description
R3Si−H + H−SiR3 + O2 → R3Si−O−SiR3 + H2O
3.キャリア
4.反射材料
10.発光側面
21.第1の変換エレメント
22.第2の変換エレメント
100.オプトエレクトロニクス部品
210.第1の蛍光体粒子
211.第1のマトリックス材料
220.第2の蛍光体粒子
221.第2のマトリックス材料
Claims (10)
- オプトエレクトロニクス半導体チップ(1)と第1の変換エレメント(21)とを備えるオプトエレクトロニクス部品(100)であって、
前記半導体チップ(1)は、所期の作動中に、前記半導体チップ(1)の発光側面(10)を経由して前記半導体チップ(1)から取り出される一次放射を発生させるものであり、
前記第1の変換エレメント(21)は、前記発光側面(10)上に位置し、
前記第1の変換エレメント(21)は第1のマトリックス材料(211)と量子ドット状の第1の蛍光体粒子(210)とを含み、
前記第1の蛍光体粒子(210)は前記第1のマトリックス材料(211)中に分布して埋め込まれており、
前記第1のマトリックス材料(211)は炭素の原子百分率が酸素の原子百分率よりも低いポリシロキサンによって形成されている、オプトエレクトロニクス部品(100)。 - 前記第1のマトリックス材料(211)中のケイ素含有量は20〜40原子パーセントであり、
前記第1のマトリックス材料(211)中の炭素含有量は最大で10原子パーセントであり、
前記第1のマトリックス材料(211)中の酸素含有量は30〜70原子パーセントであり、
前記原子パーセント値は炭素、ケイ素及び酸素が合計で100原子パーセントになるように正規化されている、請求項1に記載のオプトエレクトロニクス部品(100)。 - 前記第1の変換エレメント(21)中の前記第1のマトリックス材料(211)の質量分率は少なくとも20%である、請求項1又は2に記載のオプトエレクトロニクス部品(100)。
- 前記第1の変換エレメント(21)中の前記第1の蛍光体粒子(210)の質量分率は少なくとも20%である、請求項1〜3のいずれか一項に記載のオプトエレクトロニクス部品(100)。
- 幾何相当直径が少なくとも100nmの第2の蛍光体粒子(220)を更に含む、請求項1〜4のいずれか一項に記載のオプトエレクトロニクス部品(100)。
- 前記第2の蛍光体粒子(220)は前記第1の変換エレメント(21)の前記第1のマトリックス材料(211)中に分布して埋め込まれている、請求項5に記載のオプトエレクトロニクス部品(100)。
- 第2の変換エレメント(22)を更に備え、
前記第2の変換エレメント(22)は第2のマトリックス材料(221)を含み、
前記第2の蛍光体粒子(220)は前記第2のマトリックス材料(221)中に分布して埋め込まれており、
前記第2のマトリックス材料(221)は炭素の原子百分率が前記第1のマトリックス材料(211)よりも高いシリコーンで形成されている、請求項5に記載のオプトエレクトロニクス部品(100)。 - 前記第1の変換エレメント(21)と前記第2の変換エレメント(22)は前記発光側面(10)を少なくとも部分的に覆っており、前記第1の変換エレメント(21)は前記発光側面(10)と前記第2の変換エレメント(22)との間に配置されている、請求項7に記載のオプトエレクトロニクス部品(100)。
- 前記第1の変換エレメント(21)と前記第2の変換エレメント(22)は前記発光側面(10)を少なくとも部分的に覆っており、前記第2の変換エレメント(22)は前記発光側面(10)と前記第1の変換エレメント(21)との間に配置されている、請求項7に記載のオプトエレクトロニクス部品(100)。
- 前記第1の蛍光体粒子(210)は、CdS、CdSe、ZnS、ZnSe、およびInPからなる群より選ばれる少なくとも1種を含むか又はそれからなる、請求項1〜9のいずれか一項に記載のオプトエレクトロニクス部品(100)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018106465.9A DE102018106465B4 (de) | 2018-03-20 | 2018-03-20 | Optoelektronisches Bauteil |
DE102018106465.9 | 2018-03-20 |
Publications (1)
Publication Number | Publication Date |
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JP2019169707A true JP2019169707A (ja) | 2019-10-03 |
Family
ID=67847852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019051677A Pending JP2019169707A (ja) | 2018-03-20 | 2019-03-19 | オプトエレクトロニクス部品 |
Country Status (4)
Country | Link |
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US (1) | US11621378B2 (ja) |
JP (1) | JP2019169707A (ja) |
KR (1) | KR20190110484A (ja) |
DE (1) | DE102018106465B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2022087001A (ja) * | 2020-11-30 | 2022-06-09 | 日亜化学工業株式会社 | 発光装置及び面状光源 |
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US20230265337A1 (en) * | 2022-02-22 | 2023-08-24 | Ams-Osram International Gmbh | Converter element, method for producing a converter element and radiation emitting device |
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WO2013047407A1 (ja) * | 2011-09-30 | 2013-04-04 | コニカミノルタアドバンストレイヤー株式会社 | 発光装置及び塗布液 |
JP2013161862A (ja) * | 2012-02-02 | 2013-08-19 | Konica Minolta Inc | Led装置、及びその製造方法 |
JP2016001735A (ja) * | 2014-05-21 | 2016-01-07 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017215554A (ja) * | 2016-06-02 | 2017-12-07 | シャープ株式会社 | 波長変換部材および発光装置 |
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US7160972B2 (en) | 2003-02-19 | 2007-01-09 | Nusil Technology Llc | Optically clear high temperature resistant silicone polymers of high refractive index |
DE102012104363A1 (de) | 2012-05-21 | 2013-11-21 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
DE102012219873A1 (de) * | 2012-10-30 | 2014-05-15 | Osram Gmbh | Lichtsystem mit Farbort-Stabilisierung |
WO2014109293A1 (ja) * | 2013-01-10 | 2014-07-17 | コニカミノルタ株式会社 | Led装置およびその製造に用いられる塗布液 |
MY183161A (en) * | 2013-02-26 | 2021-02-17 | Akzo Nobel Coatings Int Bv | Anti-fouling compositions with a fluorinated oxyalkylene-containing polymer or oligomer |
US9142732B2 (en) * | 2013-03-04 | 2015-09-22 | Osram Sylvania Inc. | LED lamp with quantum dots layer |
US9484504B2 (en) * | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9666766B2 (en) * | 2013-08-21 | 2017-05-30 | Pacific Light Technologies Corp. | Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell |
US10509319B2 (en) * | 2015-02-27 | 2019-12-17 | Merck Patent Gmbh | Photosensitive composition and color converting film |
-
2018
- 2018-03-20 DE DE102018106465.9A patent/DE102018106465B4/de active Active
-
2019
- 2019-03-18 US US16/355,895 patent/US11621378B2/en active Active
- 2019-03-19 JP JP2019051677A patent/JP2019169707A/ja active Pending
- 2019-03-20 KR KR1020190031955A patent/KR20190110484A/ko not_active Application Discontinuation
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WO2013047407A1 (ja) * | 2011-09-30 | 2013-04-04 | コニカミノルタアドバンストレイヤー株式会社 | 発光装置及び塗布液 |
JP2013161862A (ja) * | 2012-02-02 | 2013-08-19 | Konica Minolta Inc | Led装置、及びその製造方法 |
JP2016001735A (ja) * | 2014-05-21 | 2016-01-07 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017215554A (ja) * | 2016-06-02 | 2017-12-07 | シャープ株式会社 | 波長変換部材および発光装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022087001A (ja) * | 2020-11-30 | 2022-06-09 | 日亜化学工業株式会社 | 発光装置及び面状光源 |
JP7285439B2 (ja) | 2020-11-30 | 2023-06-02 | 日亜化学工業株式会社 | 面状光源 |
Also Published As
Publication number | Publication date |
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US20190296197A1 (en) | 2019-09-26 |
DE102018106465A1 (de) | 2019-09-26 |
DE102018106465B4 (de) | 2024-03-21 |
US11621378B2 (en) | 2023-04-04 |
KR20190110484A (ko) | 2019-09-30 |
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