JP2019145791A - 炭化ケイ素から成る半導体ボディを備えた半導体装置 - Google Patents
炭化ケイ素から成る半導体ボディを備えた半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 251
- 229910010271 silicon carbide Inorganic materials 0.000 title description 67
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title description 64
- 239000002019 doping agent Substances 0.000 claims abstract description 153
- 230000036961 partial effect Effects 0.000 claims description 28
- 210000000746 body region Anatomy 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 21
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 230000035515 penetration Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 description 11
- 238000002513 implantation Methods 0.000 description 9
- 108091006146 Channels Proteins 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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Abstract
Description
q11/q1>0.6 (1)
q22/q2>0.3 (2)
0.5 d≦tref≦0.8 d (5)
が成り立つ。
Claims (19)
- 半導体装置(100)であって、前記半導体装置(100)は、
第1の導電型の第1の半導体領域(104)と、第2の導電型の第2の半導体領域(106)と、を含むSiC半導体ボディ(102)を有しており、
前記第1の半導体領域(104)は、前記SiC半導体ボディ(102)の第1の表面(108)に電気的に接触させられており、前記第2の半導体領域(106)とpn接合(110)を形成しており、
前記第1の半導体領域(104)および前記第2の半導体領域(106)は、前記第1の表面(108)に対し直角を成す垂直方向(y)で上下に配置されており、
前記第1の半導体領域(104)は、第1のドーパント種と第2のドーパント種とを有しており、
前記第1のドーパント種から最も近いバンド端までのエネルギーギャップは、250meVよりも小さく、
前記第2のドーパント種から最も近いバンド端までのエネルギーギャップは、250meVよりも大きい、
半導体装置(100)。 - 前記第1のドーパント種は、アルミニウムであり、前記第2のドーパント種は、ホウ素またはガリウムである、
請求項1記載の半導体装置(100)。 - 前記第1の半導体領域(104)は、さらに、前記第1の導電型の第3のドーパント種も有しており、
前記第2のドーパント種は、ホウ素またはガリウムであり、
前記第3のドーパント種は、ホウ素およびガリウムのうち前記第2のドーパント種とは異なる種に相当する、
請求項1または2記載の半導体装置(100)。 - 前記第1の半導体領域(104)は、前記SiC半導体ボディ(102)の垂直方向(y)に沿って垂直方向の広がりdを有しており、
前記第1の半導体領域(104)において、前記第1の表面(108)から出発して0からd/2までの第1の深さ範囲(114)では、前記第1の導電型のドーパントの少なくとも60%が前記第1のドーパント種に相当し、d/2からdまでの第2の深さ範囲(115)では、前記第1の導電型のドーパントの少なくとも30%が前記第2のドーパント種に相当する、
請求項1から3までのいずれか1項記載の半導体装置(100)。 - 前記第1の深さ範囲(114)における前記第1のドーパント種の最大ドーパント濃度は、前記第2の深さ範囲(115)における前記第2のドーパント種の最大ドーパント濃度よりも高い、
請求項4記載の半導体装置(100)。 - 前記第1の深さ範囲(114)における前記第1のドーパント種の最大ドーパント濃度は、前記第2の深さ範囲(115)における前記第2のドーパント種の最大ドーパント濃度よりも低い、
請求項4記載の半導体装置(100)。 - 前記第1の部分(118)は、前記第1の表面(108)から出発して深さtにおいて前記第2の部分(119)に移行しており、
前記深さtは、前記SiC半導体ボディ(102)への前記第1の半導体領域(104)の垂直方向侵入深さ(d)の50%〜80%の範囲内にある、
請求項7記載の半導体装置(100)。 - 前記第2の半導体領域(106)は、ドリフトゾーンである、
請求項1から8までのいずれか1項記載の半導体装置(100)。 - 前記ドリフトゾーンは、第1の領域と、前記第1の領域よりも低濃度でドーピングされた第2の領域と、を有しており、
前記ドリフトゾーンの前記第1の領域は、前記第1の半導体領域と前記ドリフトゾーンの前記第2の領域との間に配置されている、
請求項9記載の半導体装置(100)。 - 前記第1の半導体領域(104)は、p型ドーピングされており、前記第2の半導体領域(106)は、n型ドーピングされている、
請求項1から10までのいずれか1項記載の半導体装置(100)。 - p型ドーピングされた前記第1の半導体領域(104)に隣接するn型ドーピングされたドリフトゾーンの部分において、ホウ素によるn型ドーピングの部分的な補償が行われる、
請求項11記載の半導体装置(100)。 - 前記第1の半導体領域(104)の、第1の部分領域(1181)と前記第1の部分領域(1181)に対し垂直方向に離間された第2の部分領域(1182)とにおいて、前記第1のドーパント種の濃度が前記第2のドーパント種の濃度を上回っており、
前記第1の部分領域(1181)と前記第2の部分領域(1182)との間に、第3の部分領域(1183)が位置しており、前記第3の部分領域において、前記第2のドーパント種の濃度が前記第1のドーパント種の濃度を上回っている、
請求項1から12までのいずれか1項記載の半導体装置(100)。 - 前記第1の部分領域(1181)および前記第2の部分領域(1182)における前記第1のドーパント種の最大濃度は、前記第3の部分領域(1183)における前記第2のドーパント種の最大濃度よりも高い、
請求項13記載の半導体装置(100)。 - 前記半導体装置(100)は、さらに、
前記SiC半導体ボディ(102)の前記第1の表面(108)に設けられた第1の負荷端子と、
前記SiC半導体ボディの第2の表面に設けられた第2の負荷端子と、
を有しており、
前記半導体装置は、少なくとも1Aの負荷電流を流すように構成されている、
請求項1から14までのいずれか1項記載の半導体装置(100)。 - 前記半導体装置は、絶縁ゲート型電界効果トランジスタIGFETであり、前記第1の半導体領域(104)は、ゲート誘電体に隣接するボディ領域である、
請求項1から15までのいずれか1項記載の半導体装置(100)。 - 前記半導体装置は、絶縁ゲート型電界効果トランジスタIGFETであり、前記第1の半導体領域(104)は、ゲート誘電体に隣接するボディ領域よりも深く前記SiC半導体ボディ(102)中に達している、
請求項1から15までのいずれか1項記載の半導体装置(100)。 - 前記IGFETの前記ゲート誘電体は、ゲートトレンチ内に形成されており、前記ボディ領域は、前記ゲートトレンチの第1の側壁に隣接しており、
前記第1の側壁は、前記ゲートトレンチの第2の側壁と対向しており、前記第1の領域は、前記ゲートトレンチの前記第2の側壁に隣接している、
請求項17記載の半導体装置(100)。 - 前記半導体装置(100)は、電力用半導体ダイオードであり、前記第1の領域は、アノード領域である、
請求項1から15までのいずれか1項記載の半導体装置(100)。
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