JP2019145568A - Package for light emitting element storage, light emitting device, and light emitting module - Google Patents

Package for light emitting element storage, light emitting device, and light emitting module Download PDF

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JP2019145568A
JP2019145568A JP2018026013A JP2018026013A JP2019145568A JP 2019145568 A JP2019145568 A JP 2019145568A JP 2018026013 A JP2018026013 A JP 2018026013A JP 2018026013 A JP2018026013 A JP 2018026013A JP 2019145568 A JP2019145568 A JP 2019145568A
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light emitting
emitting element
recess
package
module
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大輔 上山
Daisuke Kamiyama
大輔 上山
堂本 千秋
Chiaki Domoto
千秋 堂本
神川 剛
Takeshi Kamikawa
剛 神川
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Kyocera Corp
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Kyocera Corp
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Priority to US16/275,964 priority patent/US11322907B2/en
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Abstract

To provide a package for light emitting element storage having high conductivity, and also to provide a light emitting device and a light emitting module using the same and excellent in dissipation.SOLUTION: A package of light-emitting element storage of the present disclosure includes an element substrate 1 including a first surface 1a having a first recess 1b for mounting a light emitting element. Surface roughness Sa of a region opposite to at least the mounted light emitting element on the bottom surface of the first recess 1b is smaller than that of the region other than the first recess, Moreover, the light emitting module of the present disclosure includes: the package for the light emitting element storage; and the light emitting element housed in the package. Furthermore, the light emitting module of the present disclosure includes: the light emitting device: and a module substrate mounting light emitting device thereon.SELECTED DRAWING: Figure 1

Description

本発明は、電子部品収納用または発光素子収納用のパッケージ、発光装置および発光モジュールに関する。   The present invention relates to a package for storing an electronic component or a light-emitting element, a light-emitting device, and a light-emitting module.

たとえば、特許文献1には、レーザダイオード・ペレット(LDペレット)がサブマウント基板(モジュール用基板)を介してステムに固定・実装された半導体レーザ装置、が開示されている。   For example, Patent Document 1 discloses a semiconductor laser device in which a laser diode pellet (LD pellet) is fixed and mounted on a stem via a submount substrate (module substrate).

特開平7−38208号公報JP-A-7-38208

このような装置では、放熱性の向上が求められている。   Such an apparatus is required to improve heat dissipation.

本発明の目的は、熱導電性の高い発光素子収納用パッケージと、それを用いた、放熱性に優れる発光装置および発光モジュールを提供することである。   An object of the present invention is to provide a light-emitting element storage package with high thermal conductivity, and a light-emitting device and a light-emitting module that use the package and have excellent heat dissipation.

本開示の発光素子収納用パッケージは、発光素子搭載用の第1凹部を有する第1面を含む基部を備え、
前記第1凹部の底面における、少なくとも前記搭載される発光素子と対向する領域の表面粗さSaは、前記第1面における、前記第1凹部以外の領域の表面粗さSaより小さいことを特徴とする。
The light emitting element storage package of the present disclosure includes a base including a first surface having a first recess for mounting the light emitting element,
The surface roughness Sa of at least the region facing the mounted light emitting element on the bottom surface of the first recess is smaller than the surface roughness Sa of the region other than the first recess on the first surface. To do.

本開示の発光装置は、前述の発光素子収納用パッケージと、該パッケージに収納された発光素子と、を備える。   A light-emitting device of the present disclosure includes the above-described light-emitting element storage package and the light-emitting element stored in the package.

また、本開示の発光モジュールは、前記の発光装置と、該発光装置を搭載するモジュール基板と、を備える。   A light emitting module according to the present disclosure includes the light emitting device and a module substrate on which the light emitting device is mounted.

本開示の発光素子収納用パッケージは、熱導電性が高いため、発熱量が大きな発光素子でも安定して搭載することができる。また、前記の発光素子収納用パッケージを搭載・実装した発光装置および発光モジュールは、放熱性に優れる発光装置および発光モジュールとすることができる。   Since the light emitting element storage package of the present disclosure has high thermal conductivity, even a light emitting element that generates a large amount of heat can be stably mounted. In addition, the light emitting device and the light emitting module on which the light emitting element housing package is mounted / mounted can be a light emitting device and a light emitting module that are excellent in heat dissipation.

第1実施形態の発光素子収納用パッケージの構成を示す(a)斜視図および(b)断面図である。It is (a) perspective view and (b) sectional drawing which show the structure of the light emitting element accommodation package of 1st Embodiment. 第2実施形態の発光素子収納用パッケージの構成を示す(a)斜視図および(b)断面図である。It is the (a) perspective view and (b) sectional view which show the structure of the light emitting element accommodation package of 2nd Embodiment. 第3実施形態の発光装置の構成を示す(a)斜視図および(b)断面図である。It is (a) perspective view and (b) sectional drawing which show the structure of the light-emitting device of 3rd Embodiment. 第4実施形態の発光モジュールの構成を示す断面図である。示す概略構成図である。It is sectional drawing which shows the structure of the light emitting module of 4th Embodiment. It is a schematic block diagram shown.

以下に、本開示の発光素子収納用パッケージの一例について、添付の図面を参照しつつ説明する。図1および図2は、それぞれ、第1実施形態および第2実施形態の発光素子収納用パッケージの(a)斜視図と(b)断面図である。なお、同様の図面において同じ機能を有する部材には、同じ符号を付与してその詳細な説明を省略する。   Hereinafter, an example of the light emitting element storage package of the present disclosure will be described with reference to the accompanying drawings. 1 and 2 are (a) a perspective view and (b) a cross-sectional view, respectively, of the light emitting element storage package of the first embodiment and the second embodiment. In addition, the same code | symbol is provided to the member which has the same function in the same drawing, and the detailed description is abbreviate | omitted.

図1に示す第1実施形態の発光素子収納用パッケージ10は、以降の各実施形態でも用いられる、最も基本的な構成である。発光素子収納用パッケージ10は、平板状または略直方体状の基部(素子基板1)と、その図示上面である第1面1aに設けられた第1配線導体11および第2配線導体12と、素子基板1の幅方向(図示左右方向)中央部の、素子搭載領域に配設された金属膜(導電体層1d)とを備える。   The light emitting element storage package 10 of the first embodiment shown in FIG. 1 is the most basic configuration used in the following embodiments. The light emitting element storage package 10 includes a flat or substantially rectangular parallelepiped base (element substrate 1), a first wiring conductor 11 and a second wiring conductor 12 provided on a first surface 1a which is the upper surface in the figure, and an element. A metal film (conductor layer 1d) disposed in the element mounting region at the center in the width direction (left-right direction in the figure) of the substrate 1;

第1配線導体11および第2配線導体12と導電体層1dは、たとえばタングステン、モリブデン、銅、銀または銀パラジウム等の金属粉末の焼結体等から構成されている。なかでも、導電体層1dの材料としては、金が好適に使用される。   The first wiring conductor 11 and the second wiring conductor 12 and the conductor layer 1d are made of, for example, a sintered body of metal powder such as tungsten, molybdenum, copper, silver, or silver palladium. Among these, gold is preferably used as the material for the conductor layer 1d.

素子基板1は、たとえば、窒化アルミニウム(AlN)、アルミナ(Al)等のセラミックス、または、ガラス−セラミックス等のセラミック材料である絶縁材料等からなる。素子基板1は、絶縁材料を用いて一体的に作製されたものであってもよく、絶縁材料からなる絶縁層を複数積層して作製されたものであってもよい。 The element substrate 1 is made of, for example, ceramics such as aluminum nitride (AlN) or alumina (Al 2 O 3 ), or an insulating material that is a ceramic material such as glass-ceramics. The element substrate 1 may be integrally manufactured using an insulating material, or may be manufactured by laminating a plurality of insulating layers made of an insulating material.

素子基板1上面の、発光素子搭載面である第1面1aには、図1(b)の断面図に示すように、発光素子(符号LD,仮想線:二点鎖線で表示)と対向する発光素子搭載領域の直下に、発光素子の外形形状に対応する第1凹部1bが形成されており、その底面1cの表面粗さSaは、第1凹部1b以外の第1面1aの表面粗さSaより小さくなっている。   As shown in the cross-sectional view of FIG. 1B, the first surface 1a, which is the light emitting element mounting surface, on the upper surface of the element substrate 1 is opposed to the light emitting element (reference numeral LD, virtual line: indicated by a two-dot chain line). A first recess 1b corresponding to the outer shape of the light emitting element is formed immediately below the light emitting element mounting region, and the surface roughness Sa of the bottom surface 1c is the surface roughness of the first surface 1a other than the first recess 1b. It is smaller than Sa.

具体的には、発光素子(LD)と対向する底面1cの表面粗さSaは0.1μm以下になっており、第1凹部1b以外の第1面1aの表面粗さSaは、約1μmになっている。   Specifically, the surface roughness Sa of the bottom surface 1c facing the light emitting element (LD) is 0.1 μm or less, and the surface roughness Sa of the first surface 1a other than the first recess 1b is about 1 μm. It has become.

なお、以下、表面粗さSaが0.1μm以下の平坦な面を「平坦面」と呼ぶ場合がある。前述の「表面粗さSa」は、ISO25178に準拠して測定を行ったものであり、測定機器として、レーザ顕微鏡や走査型プローブ顕微鏡(Scanning Probe Microscope:SPM)等を用いた。   Hereinafter, a flat surface having a surface roughness Sa of 0.1 μm or less may be referred to as a “flat surface”. The above-mentioned “surface roughness Sa” was measured according to ISO25178, and a laser microscope, a scanning probe microscope (SPM), or the like was used as a measuring instrument.

また、前述の第1凹部1bの表面粗さは、プラズマを用いた研磨加工や、基板成形時に、底面1cに対応する面の表面粗さSaが0.1μm以下になっている成形型を用いて、その平坦面(鏡面)を前記底面1cに転写することにより、調整することができる。また、これらの方法により、第1面1aの表面(基板表面の高さ基準面)からの深さが、100nm以上50μm以下の凹部を形成することができる。   Further, the surface roughness of the first concave portion 1b is a molding die in which the surface roughness Sa of the surface corresponding to the bottom surface 1c is 0.1 μm or less at the time of polishing using plasma or molding the substrate. Then, the flat surface (mirror surface) can be adjusted by transferring it to the bottom surface 1c. Also, by these methods, a recess having a depth from the surface of the first surface 1a (the height reference surface of the substrate surface) of 100 nm or more and 50 μm or less can be formed.

さらに、第1凹部1bの深さを1〜200μm程度とし、その深い第1凹部1bに発光素子(LD)の底部または底面を嵌合させることにより、第1凹部1bを、発光素子(LD)の位置決め、あるいは、光軸合わせ(アライメント)に用いてもよい。   Further, the depth of the first recess 1b is about 1 to 200 μm, and the bottom or bottom surface of the light emitting element (LD) is fitted into the deep first recess 1b, so that the first recess 1b becomes the light emitting element (LD). May be used for positioning or optical axis alignment (alignment).

以上の構成により、発光素子(LD)の位置決め精度と、導電体層1dを介した、発光素子(LD)と素子基板1との間の熱伝導が、底面1cが平坦でない従来のものより、向上する。したがって、発光素子(LD)から発せられる熱の放熱を、下側の素子基板1に向けて、効率的に行うことができる。   With the above configuration, the positioning accuracy of the light emitting element (LD) and the heat conduction between the light emitting element (LD) and the element substrate 1 through the conductor layer 1d are lower than the conventional one in which the bottom surface 1c is not flat. improves. Therefore, heat radiated from the light emitting element (LD) can be efficiently radiated toward the lower element substrate 1.

なお、第1凹部1b以外の第1面1aは、表面粗さSaが0.1μmを超える、表面積の大きな平坦でない面であるため、素子基板1上方に向けての放熱効果は、変わらず維持されている。   Since the first surface 1a other than the first recess 1b is a non-flat surface having a large surface area with a surface roughness Sa exceeding 0.1 μm, the heat dissipation effect toward the upper side of the element substrate 1 remains unchanged. Has been.

また、発光素子(LD)における、第1凹部1bと当接する面(底面もしくは下面)の表面に、前記導電体層1dと同様の金属膜(たとえば、金等)を形成してもよい。これにより、発光素子(LD)と、素子基板1との熱伝導を、より向上させることができる。   Further, a metal film (for example, gold or the like) similar to that of the conductor layer 1d may be formed on the surface (bottom surface or lower surface) of the light emitting element (LD) that is in contact with the first recess 1b. Thereby, the heat conduction between the light emitting element (LD) and the element substrate 1 can be further improved.

つぎに、図2に示す第2実施形態の発光素子収納用パッケージ20は、発光素子収納用パッケージ10の構成に加え、上面である第1面1aに、第1凹部1bの周囲を囲む枠部(枠体2)を備えており、この枠体2内の空間が、発光素子(LD)収容用の第2凹部2aとなっている。また、枠体2の上端面2bが、第2凹部2aの開口を封止するための封止部材(後記の蓋体3)が載置される封止面となっている。   Next, in the light emitting element housing package 20 of the second embodiment shown in FIG. 2, in addition to the configuration of the light emitting element housing package 10, a frame portion that surrounds the periphery of the first recess 1b on the first surface 1a that is the upper surface. (Frame body 2) is provided, and a space in the frame body 2 is a second recess 2a for accommodating a light emitting element (LD). Further, the upper end surface 2b of the frame body 2 is a sealing surface on which a sealing member (lid body 3 described later) for sealing the opening of the second recess 2a is placed.

なお、枠体2の上端面2bには、この面の熱伝導を向上させる金属膜2cが配設されているが、図2(b)の断面図では、記載を省略している。   In addition, although the metal film 2c which improves the heat conduction of this surface is arrange | positioned at the upper end surface 2b of the frame 2, description is abbreviate | omitted in sectional drawing of FIG.2 (b).

また、枠体2の図示奥側の切り欠き2dは、発光素子収納用パッケージ20内の発光素子搭載領域(導電体層1d上)に対応して設けられているものであり、この切り欠き2d部から図示後方に向かって、レーザ光線等の発光が通り抜けできるようになっている。この切り欠き2d内には、ガラス製や樹脂製等の、透明で透光性を有するブロックが、第2凹部2aの密封(封止)のために配設される。   Further, a notch 2d on the back side of the frame 2 in the figure is provided corresponding to the light emitting element mounting region (on the conductor layer 1d) in the light emitting element storage package 20, and this notch 2d. The light emitted from the laser beam or the like can pass through from the portion toward the rear in the figure. In this notch 2d, a transparent and translucent block such as glass or resin is disposed for sealing (sealing) the second recess 2a.

また、第2凹部2aの上面開口の密封(封止)ために、枠体2の上側には、前記上端面2bに当接する封止部材(後記の蓋体3)が配設される。   Further, in order to seal (seal) the upper surface opening of the second recess 2a, a sealing member (lid body 3 described later) that contacts the upper end surface 2b is disposed on the upper side of the frame body 2.

上記構成によっても、導電体層1dを介した、発光素子(LD)と素子基板1との間の熱伝導が、底面1cが平坦でない従来のものより、向上する。したがって、発光素子(LD)から発せられる熱の放熱を、下側の素子基板1に向けて、効率的に行うことができる。   Also with the above configuration, the heat conduction between the light emitting element (LD) and the element substrate 1 through the conductor layer 1d is improved as compared with the conventional one in which the bottom surface 1c is not flat. Therefore, heat radiated from the light emitting element (LD) can be efficiently radiated toward the lower element substrate 1.

さらに、発光素子収納用パッケージ20は、枠体2の上端面2bに金属膜2cが設けられているため、その上側に位置する封止部材に向けて、効率的に放熱を行うことができる。   Furthermore, since the metal film 2c is provided on the upper end surface 2b of the frame 2, the light emitting element storage package 20 can efficiently dissipate heat toward the sealing member located on the upper side.

なお、枠体上端面2bの金属膜2cの構成方法は限定されるものではない。金属材料の塗布や焼成等に形成してもよく、金属板等を蓋体3との間に介在配置させてもよい。また、金属膜2cは、たとえばタングステン、モリブデン、銅、銀または銀パラジウム等の金属粉末から構成されている。なかでも、熱導電性の高い金が、好適に使用される。   In addition, the structure method of the metal film 2c of the frame upper end surface 2b is not limited. It may be formed by applying or firing a metal material, or a metal plate or the like may be interposed between the lid 3 and the like. The metal film 2c is made of metal powder such as tungsten, molybdenum, copper, silver, or silver palladium. Of these, gold having high thermal conductivity is preferably used.

さらに、金属膜2cの下地となる枠体2の上端面2bは、他の部位より、表面粗さSaの小さい平坦な面としてもよい。具体的には、上端面2bの表面粗さSaを0.1μm以下としてもよい。これにより、より熱伝導を向上させることができる。   Furthermore, the upper end surface 2b of the frame 2 serving as the base of the metal film 2c may be a flat surface having a smaller surface roughness Sa than other portions. Specifically, the surface roughness Sa of the upper end surface 2b may be 0.1 μm or less. Thereby, heat conduction can be improved more.

つぎに、図3に示す第3実施形態の発光装置30は、前述(第2実施形態)の発光素子収納用パッケージ20の所定位置(搭載位置)に、発光素子LDを搭載するとともに、発光素子LD上側の電極を、ボンディングワイヤBWを介して、第2配線導体12に接続したものである。なお、発光素子LD下側の電極は、先に述べた金属膜(導電体層1d)を介して、第1配線導体11に接続されている。   Next, the light emitting device 30 according to the third embodiment shown in FIG. 3 has the light emitting element LD mounted at a predetermined position (mounting position) of the light emitting element storage package 20 described above (second embodiment), and the light emitting element. The upper electrode of the LD is connected to the second wiring conductor 12 via the bonding wire BW. The electrode below the light emitting element LD is connected to the first wiring conductor 11 via the metal film (conductor layer 1d) described above.

また、発光素子LDが搭載された発光装置30の枠体2の上には、金属製の蓋体3が載置されており、前述の金属膜2cを介して、発光素子LDから発せられた熱が、この蓋体3に向けて伝達されるようになっている。   Further, a metal lid 3 is placed on the frame 2 of the light emitting device 30 on which the light emitting element LD is mounted, and emitted from the light emitting element LD through the metal film 2c described above. Heat is transmitted toward the lid 3.

以上の構成によっても、発光素子LDから発せられた熱が、下側の素子基板1に向けて、および、上側の蓋体3に向けて、それぞれ効率的に放熱される。したがって、第3実施形態の発光装置30は、発光素子LDから発せられる熱の放熱が効果的に行われ、結果、発光素子LDの温度を低下させることができる。また、発光素子LDの温度が低下することにより、その寿命を向上させることができる。   Also with the above configuration, the heat generated from the light emitting element LD is efficiently radiated toward the lower element substrate 1 and toward the upper lid 3. Therefore, the light emitting device 30 of the third embodiment can effectively dissipate heat generated from the light emitting element LD, and as a result, the temperature of the light emitting element LD can be reduced. In addition, the lifetime of the light emitting element LD can be improved by lowering the temperature of the light emitting element LD.

また、発光素子LDにおける、第1凹部1bと当接する面(底面もしくは下面)の表面に、前記導電体層1dと同様の金属膜(たとえば、金等)を形成してもよい。これにより、発光素子LDと素子基板1との間の熱伝導を、より向上させることができる。   Further, a metal film (for example, gold or the like) similar to that of the conductor layer 1d may be formed on the surface (bottom surface or bottom surface) of the light emitting element LD that is in contact with the first recess 1b. Thereby, the heat conduction between the light emitting element LD and the element substrate 1 can be further improved.

つぎに、図4に示す第4実施形態の発光モジュール40は、第3実施形態の発光装置30を、このような発光装置30を複数搭載可能なモジュール基板4に実装したものである。モジュール基板4には、図示のような第3凹部4aが、複数形成されている。   Next, a light emitting module 40 of the fourth embodiment shown in FIG. 4 is obtained by mounting the light emitting device 30 of the third embodiment on a module substrate 4 on which a plurality of such light emitting devices 30 can be mounted. The module substrate 4 is formed with a plurality of third recesses 4a as shown.

このモジュール基板4の第3凹部4aは、発光装置30の底部もしくは底面と嵌合可能な形状に形成されている。また、第3凹部4aの底面およびその周囲のモジュール基板4の上面(発光装置搭載面)には、先に述べた金属膜2c等と同様の金属膜4bが形成されている。   The third recess 4 a of the module substrate 4 is formed in a shape that can be fitted to the bottom or bottom of the light emitting device 30. Further, a metal film 4b similar to the metal film 2c and the like described above is formed on the bottom surface of the third recess 4a and the upper surface (light emitting device mounting surface) of the surrounding module substrate 4.

なお、図4のように、上記第3凹部4aに嵌合する素子基板1の底面にも、金属膜4bと同様の金属膜1eを配設してもよい。これにより、素子基板1とモジュール基板4との間の熱伝導を向上させることができる。また、金属膜4bおよび金属膜1eも、たとえばタングステン、モリブデン、銅、銀または銀パラジウム等の金属粉末から構成されている。なかでも、熱導電性の高い金が、好適に使用される。   As shown in FIG. 4, a metal film 1e similar to the metal film 4b may be disposed on the bottom surface of the element substrate 1 fitted in the third recess 4a. Thereby, the heat conduction between the element substrate 1 and the module substrate 4 can be improved. The metal film 4b and the metal film 1e are also made of metal powder such as tungsten, molybdenum, copper, silver, or silver palladium. Of these, gold having high thermal conductivity is preferably used.

以上の構成によって、各発光装置30とモジュール基板4との間を、熱伝導性の高い接続とすることができる。したがって、第4実施形態の発光モジュール40は、発光素子LDから発せられる熱の放熱が効果的に行われ、結果、発光素子LDの温度を低下させることができる。また、発光素子LDの温度が低下することにより、その寿命を向上させることができる。   With the above configuration, a connection with high thermal conductivity can be established between each light emitting device 30 and the module substrate 4. Therefore, in the light emitting module 40 of the fourth embodiment, heat released from the light emitting element LD is effectively radiated, and as a result, the temperature of the light emitting element LD can be lowered. In addition, the lifetime of the light emitting element LD can be improved by lowering the temperature of the light emitting element LD.

また、第4実施形態の発光モジュール40は、モジュール基板4の前記第3凹部4aと発光装置30の嵌め合いにより、各発光装置30を、予め決められた所定位置に正確に光軸合わせ(アライメント)して、位置決め・固定することができる。したがって、発光装置30および発光モジュール40の生産性と歩留まりとを、向上させることができる。   Further, in the light emitting module 40 of the fourth embodiment, the optical axis alignment (alignment) of each light emitting device 30 is accurately performed at a predetermined position by fitting the third concave portion 4a of the module substrate 4 with the light emitting device 30. ) Can be positioned and fixed. Therefore, productivity and yield of the light emitting device 30 and the light emitting module 40 can be improved.

さらに、素子基板1下面1の金属膜1eおよびモジュール基板上面の金属膜4bの下地となる面は、他の部位より、表面粗さSaの小さい平坦な面としてもよい。具体的には、これら下地面の表面粗さSaを0.1μm以下としてもよい。これにより、より熱伝導を向上させることができる。   Furthermore, the surface that becomes the base of the metal film 1e on the lower surface 1 of the element substrate 1 and the metal film 4b on the upper surface of the module substrate may be a flat surface having a smaller surface roughness Sa than other portions. Specifically, the surface roughness Sa of these base surfaces may be 0.1 μm or less. Thereby, heat conduction can be improved more.

なお、本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内において、種々の変更、改良等が可能である。   It should be noted that the present invention is not limited to the above-described embodiment, and various changes and improvements can be made without departing from the scope of the present invention.

1 素子基板
1a 第1面
1b 第1凹部
1c 底面
1d 導電体層
1e 金属膜
2 枠体
2a 第2凹部
2b 上端面
2c 金属膜
2d 切り欠き
3 蓋体
4 モジュール基板
4a 第3凹部
4b 金属膜
10 発光素子収納用パッケージ
11 第1配線導体
12 第2配線導体
20 発光素子収納用パッケージ
30 発光装置
40 発光モジュール
DESCRIPTION OF SYMBOLS 1 Element substrate 1a 1st surface 1b 1st recessed part 1c Bottom surface 1d Conductor layer 1e Metal film 2 Frame 2a 2nd recessed part 2b Upper end surface 2c Metal film 2d Notch 3 Lid 4 Module substrate 4a 3rd recessed part 4b Metal film 10 Light emitting element storage package 11 First wiring conductor 12 Second wiring conductor 20 Light emitting element storage package 30 Light emitting device 40 Light emitting module

Claims (13)

発光素子搭載用の第1凹部を有する第1面を含む基部を備え、
前記第1凹部の底面における、少なくとも前記搭載される発光素子と対向する領域の表面粗さSaは、前記第1面における、前記第1凹部以外の領域の表面粗さSaより小さい、発光素子収納用パッケージ。
A base including a first surface having a first recess for mounting a light emitting element;
The surface roughness Sa of at least the region facing the mounted light emitting element on the bottom surface of the first recess is smaller than the surface roughness Sa of the region other than the first recess on the first surface. For package.
前記発光素子と対向する領域の表面粗さSaが0.1μm以下であり、前記第1凹部以外の領域の表面粗さSaが0.1μmより大きい、請求項1に記載の発光素子収納用パッケージ。   2. The light emitting element storage package according to claim 1, wherein a surface roughness Sa of a region facing the light emitting element is 0.1 μm or less, and a surface roughness Sa of a region other than the first recess is larger than 0.1 μm. . 前記第1凹部の底面の、前記第1面の上面からの深さが100nm以上50μm以下である、請求項1または2に記載の発光素子収納用パッケージ。   The light emitting element storage package according to claim 1 or 2, wherein a depth of a bottom surface of the first recess from a top surface of the first surface is 100 nm or more and 50 µm or less. 前記第1凹部の底面の、前記発光素子と対向する領域は、その表面に金属からなる膜を有する、請求項1〜3のいずれか1つに記載の発光素子収納用パッケージ。   The area | region facing the said light emitting element of the bottom face of a said 1st recessed part is a package for light emitting element accommodation of any one of Claims 1-3 which has the film | membrane which consists of metals on the surface. 前記第1面に、前記第1凹部の周囲を囲む枠部を備え、
前記枠部内の空間が、発光素子収容用の第2凹部であり、
該枠部の上端面が、前記第2凹部の開口を封止する封止部材が載置される封止面である、請求項1〜4のいずれか1つに記載の発光素子収納用パッケージ。
The first surface includes a frame portion that surrounds the first recess,
The space in the frame portion is a second recess for accommodating a light emitting element,
The light emitting element storage package according to any one of claims 1 to 4, wherein an upper end surface of the frame portion is a sealing surface on which a sealing member for sealing the opening of the second recess is placed. .
前記封止面の表面粗さSaが0.1μm以下である、請求項5に記載の発光素子収納用パッケージ。   The package for light emitting element accommodation of Claim 5 whose surface roughness Sa of the said sealing surface is 0.1 micrometer or less. 前記封止面は、その表面に金属からなる膜を有する、請求項5または6に記載の発光素子収納用パッケージ。   The light emitting element storage package according to claim 5 or 6, wherein the sealing surface has a film made of a metal on the surface thereof. 請求項1〜7のいずれか1つに記載の発光素子収納用パッケージと、該パッケージに収納された発光素子と、を備える発光装置。   A light emitting device comprising: the light emitting element storage package according to claim 1; and a light emitting element stored in the package. 前記発光素子は、半導体レーザ素子を含む、請求項8に記載の発光装置。   The light emitting device according to claim 8, wherein the light emitting element includes a semiconductor laser element. 請求項8または9に記載の発光装置と、該発光装置を搭載するモジュール基板と、を備える発光モジュール。   A light emitting module comprising the light emitting device according to claim 8 and a module substrate on which the light emitting device is mounted. 前記モジュール基板の発光装置搭載面は、前記発光装置位置決め用の第3凹部を含む、請求項10に記載の発光モジュール。   The light emitting device mounting surface of the said module substrate is a light emitting module of Claim 10 containing the 3rd recessed part for the said light emitting device positioning. 前記3凹部の底面の表面粗さSaが0.1μm以下である、請求項11に記載の発光モジュール。   The light emitting module of Claim 11 whose surface roughness Sa of the bottom face of the said 3 recessed part is 0.1 micrometer or less. 前記第3凹部の底面は、その表面に金属からなる膜を有する、請求項11または12に記載の発光モジュール。   The light emitting module according to claim 11 or 12, wherein the bottom surface of the third recess has a film made of metal on the surface thereof.
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