JP2019143217A - めっき装置 - Google Patents
めっき装置 Download PDFInfo
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- JP2019143217A JP2019143217A JP2018029810A JP2018029810A JP2019143217A JP 2019143217 A JP2019143217 A JP 2019143217A JP 2018029810 A JP2018029810 A JP 2018029810A JP 2018029810 A JP2018029810 A JP 2018029810A JP 2019143217 A JP2019143217 A JP 2019143217A
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- 238000007747 plating Methods 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 178
- 230000033228 biological regulation Effects 0.000 claims abstract description 59
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000005341 cation exchange Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
Description
で、めっき初期に基板表面の電気活性イオンがより消耗し、濃度低下する。且つ、頂点付近は、電気接点をめっき液から保護するシールなどの基板ホルダの構成部品で囲われることで、電気活性イオンが基板表面に供給されにくい。このため、多角形基板では、中心部からの距離が比較的長い角部に近い領域で、最終的なめっき膜厚が小さくなる傾向がある。
及びアノードホルダ13を収容するように構成されためっき槽14と、オーバーフロー槽(不図示)とを有する。基板ホルダ30は、多角形の基板Wfを保持するように構成され、アノードホルダ13は、金属表面を有するアノード12を保持するように構成される。多角形の基板Wfとアノード12は、めっき電源15を介して電気的に接続され、基板Wfとアノード12との間に電流を流すことにより基板Wfの表面にめっき膜が形成される。
板Wfに流れる。言い換えれば、レギュレーションプレート20は、アノード12と基板Wfとの間に形成される電場の一部を遮蔽する。また、多角形開口21を通過した電流は、壁部23に案内されて基板Wfの外側に広がることが抑制される。そして、実施形態のレギュレーションプレート20は、多角形開口21の辺の中央部を含む領域(第1領域)にだけ壁部23が設けられているため、特に第1領域において基板Wfの端部近傍に電流が流れることが抑制される。一方、レギュレーションプレート20は、多角形開口21の角部付近(第2領域)では壁部23が切り欠かれているため、この第2領域においては第1領域に比べて電流の広がりが抑制されない。ここで、多角形の基板Wfの角部付近には比較的電流が集中せず、基板Wfの辺の中央部付近に比較的電流が集中する傾向がある。これに対して、実施形態のレギュレーションプレート20を使用することにより、基板Wfの辺に流れる電流が不均一となることを抑制でき、膜厚の面内均一性を向上させることができる。
斜とされてもよい。また、図5に示される例では、第2領域23bの壁部23は、第1領域23aに向かって第1領域23aの壁部23の高さと同じ高さまで傾斜している。しかし、こうした例に限定されず、壁部23が第1領域23aと第2領域23bとで段差を有するとともに、第2領域23bで傾斜していてもよい。
に台座331を設置することで、基板ホルダ30が垂直に吊下げ支持される。また、アーム部330には、めっき槽14の周壁上面に台座331を設置したときに、めっき槽14に設けられた電気接点と接触するように構成されたコネクタ332が設けられる。これにより、基板ホルダ30は外部電源と電気的に接続され、基板ホルダ30に保持された多角形の基板Wfに電圧・電流が印加される。
12 アノード
13 アノードホルダ
15A,15B,15C 電源
17 制御装置
18 アノードマスク
18a 多角形開口
20 レギュレーションプレート
21 多角形開口
23 壁部
23a 第1領域
23b 第2領域
30 基板ホルダ
34 保持面
Wf 多角形基板
Claims (4)
- アノードを保持するように構成されるアノードホルダと、
多角形基板を保持するように構成される基板ホルダと、
前記アノードホルダと前記基板ホルダとの間に設けられるレギュレーションプレートと、を備え、
前記レギュレーションプレートは、前記多角形基板の外形に沿った第1の多角形開口を有する本体部と、前記第1の多角形開口の縁から前記基板ホルダ側に突出する壁部と、を有し、
前記壁部は、前記第1の多角形開口の辺の中央部を含む第1領域では前記基板ホルダ側に第1距離にわたって突出しており、前記第1の多角形開口の角部を含む第2領域では切り欠かれている、または、前記基板ホルダ側に前記第1距離より小さい第2距離にわたって突出している、めっき装置。 - 前記壁部の前記第1領域は、前記本体部の板面に垂直な方向から見て外側の辺が長い台形状である、請求項1に記載のめっき装置。
- 前記レギュレーションプレートの前記第1の多角形開口を閉塞するように配置され、金属イオンの透過を許容し添加剤の透過を妨げる隔膜を更に備える、請求項1または2に記載のめっき装置。
- 前記多角形基板の外形に沿った第2の多角形開口を有するアノードマスク本体部と、前記第2の多角形開口の縁から前記基板ホルダ側に突出するアノードマスク壁部と、を有し、前記アノードホルダに取り付けられるアノードマスクを更に備え、
前記アノードマスク壁部は、前記第2の多角形開口の辺の中央部を含む第3領域では前記基板ホルダ側に第3距離にわたって突出しており、前記第2の多角形開口の角部を含む第4領域では切り欠かれている、または、前記基板ホルダ側に前記第3距離より小さい第4距離にわたって突出している、
請求項1から3の何れか1つに記載のめっき装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018029810A JP6942072B2 (ja) | 2018-02-22 | 2018-02-22 | めっき装置 |
KR1020180163595A KR102569414B1 (ko) | 2018-02-22 | 2018-12-17 | 도금 장치 |
CN201811592104.0A CN110184639B (zh) | 2018-02-22 | 2018-12-25 | 电镀装置 |
TW108100774A TWI781275B (zh) | 2018-02-22 | 2019-01-09 | 電鍍裝置 |
US16/260,153 US10968530B2 (en) | 2018-02-22 | 2019-01-29 | Electroplating device |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018029810A JP6942072B2 (ja) | 2018-02-22 | 2018-02-22 | めっき装置 |
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Publication Number | Publication Date |
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JP2019143217A true JP2019143217A (ja) | 2019-08-29 |
JP6942072B2 JP6942072B2 (ja) | 2021-09-29 |
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JP2018029810A Active JP6942072B2 (ja) | 2018-02-22 | 2018-02-22 | めっき装置 |
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US (1) | US10968530B2 (ja) |
JP (1) | JP6942072B2 (ja) |
KR (1) | KR102569414B1 (ja) |
CN (1) | CN110184639B (ja) |
TW (1) | TWI781275B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021031718A (ja) * | 2019-08-22 | 2021-03-01 | 株式会社荏原製作所 | 基板ホルダおよびめっき装置 |
KR20220169477A (ko) * | 2021-06-18 | 2022-12-27 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금 장치 및 도금 방법 |
JP7285389B1 (ja) * | 2022-06-27 | 2023-06-01 | 株式会社荏原製作所 | めっき装置、および、めっき方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7354020B2 (ja) * | 2020-03-04 | 2023-10-02 | 株式会社荏原製作所 | めっき装置および抵抗体 |
CN111394758B (zh) * | 2020-05-14 | 2023-11-03 | 绍兴上虞顺风金属表面处理有限公司 | 一种基于金属表面化处理领域的电镀工艺及设备 |
CN113638022B (zh) * | 2021-10-14 | 2022-01-04 | 常州欣盛半导体技术股份有限公司 | 用于调节载带与阳极间距离的装置 |
WO2023233571A1 (ja) * | 2022-06-01 | 2023-12-07 | 株式会社荏原製作所 | めっき装置 |
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- 2018-02-22 JP JP2018029810A patent/JP6942072B2/ja active Active
- 2018-12-17 KR KR1020180163595A patent/KR102569414B1/ko active IP Right Grant
- 2018-12-25 CN CN201811592104.0A patent/CN110184639B/zh active Active
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2019
- 2019-01-09 TW TW108100774A patent/TWI781275B/zh active
- 2019-01-29 US US16/260,153 patent/US10968530B2/en active Active
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WO2024003975A1 (ja) * | 2022-06-27 | 2024-01-04 | 株式会社荏原製作所 | めっき装置、および、めっき方法 |
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KR20190101278A (ko) | 2019-08-30 |
US10968530B2 (en) | 2021-04-06 |
CN110184639A (zh) | 2019-08-30 |
US20190256997A1 (en) | 2019-08-22 |
KR102569414B1 (ko) | 2023-08-22 |
TWI781275B (zh) | 2022-10-21 |
TW201937010A (zh) | 2019-09-16 |
CN110184639B (zh) | 2022-07-26 |
JP6942072B2 (ja) | 2021-09-29 |
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