JP2019110292A - Semiconductor light-emitting device - Google Patents

Abstract

To provide a semiconductor light-emitting device capable of suppressing variations of a resin part shape.SOLUTION: A semiconductor light-emitting device A1 comprises: a base material 11; a conductive layer 12; a substrate 1 having an insulation layer 13; a semiconductor light emission element 2; and a rein part 3. The base material 11 includes: a pair of base first side surfaces; and a pair of base third side surfaces 115. The conductive layer 12 includes a surface part 121 and a side surface part 123. The surface part 121 includes a surface first part 1211. The insulation layer 13 includes: an insulation layer first part 131; and an insulation second part 132. The resin part 3 coves the insulation layer first part 131 and the insulation second part 132 of the insulation layer 13. A first thickness that is a thickness of the insulation layer first part 131 is thicker than a second thickness as a thickness of the insulation second part 132.SELECTED DRAWING: Figure 4

Description

  The present disclosure relates to a semiconductor light emitting device.

  Patent Document 1 discloses an example of a conventional semiconductor light emitting device. The semiconductor light emitting device disclosed in the document includes a substrate, a semiconductor light emitting element, and a resin portion. The resin portion transmits light from the semiconductor light emitting element.

Unexamined-Japanese-Patent No. 2017-126743

  The light emission state from the semiconductor light emitting device is affected by the shape of the resin portion and the like. The color tone of light emitted from the semiconductor light emitting device varies depending on the shape of the resin portion and the like. In addition, it is not preferable that the shape of the resin part varies.

  The present disclosure is conceived under the above-described circumstances, and an object thereof is to provide a semiconductor light emitting device capable of suppressing variation in color tone. Moreover, this indication makes it the subject to provide the semiconductor light-emitting device which can suppress the dispersion | variation in the resin part shape.

  A semiconductor light emitting device provided by the present disclosure includes: an insulating substrate having a substrate surface facing one side in a thickness direction and a substrate back surface facing the other side in the thickness direction; a conductor layer formed on the substrate And a substrate having an insulating layer covering a part of the conductor layer, a semiconductor light emitting device mounted on the substrate surface side of the substrate, and covering the semiconductor light emitting device and transmitting light from the semiconductor light emitting device And the base member of the substrate is a pair of base material first side surfaces, each connecting the base material surface and the base material back surface and being separated in a first direction. And a pair of third substrate side surfaces that respectively connect the front surface and the rear surface of the base and are recessed more toward the semiconductor light emitting element than the first side surface of the base in the thickness direction view. And the conductor layer is formed on the surface of the substrate A surface first portion having a surface portion and a side surface portion formed on the base material third side surface, wherein the surface portion is adjacent to the semiconductor light emitting element side with respect to the base material third side surface and connected to the side surface portion An insulating layer first portion positioned opposite to the semiconductor light emitting element with respect to the third substrate side in the thickness direction, and the conductor in the thickness direction And an insulating layer second portion overlapping the surface first portion of the layer, wherein the resin portion covers the insulating layer first portion and the insulating layer second portion of the insulating layer; An insulating layer first region included in the insulating layer first surface in contact with the resin portion in 1 part, and a resin first region overlapping the insulating layer first region in the thickness direction of the resin surface of the resin portion The first distance, which is the distance between A second distance which is a distance between an insulating layer second region included in the layer second surface and a second resin region overlapping the insulating layer second region in the thickness direction of the resin surface of the resin portion Greater than.

  According to the semiconductor light emitting device of the present disclosure, it is possible to suppress the variation in color tone.

  Other features and advantages of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

FIG. 1 is a plan view showing a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 1 is a plan view of relevant parts showing a semiconductor light emitting device according to a first embodiment of the present disclosure. It is a bottom view showing a semiconductor light-emitting device concerning a 1st embodiment of this indication. It is sectional drawing in alignment with the IV-IV line of FIG. FIG. 1 is an enlarged cross-sectional view of a relevant part showing a semiconductor light emitting device according to a first embodiment of the present disclosure. It is a front view showing a semiconductor light-emitting device concerning a 1st embodiment of this indication. It is a principal part enlarged front view showing a semiconductor light-emitting device concerning a 1st embodiment of this indication. It is a side view showing a semiconductor light-emitting device concerning a 1st embodiment of this indication. It is a principal part enlarged side view showing a semiconductor light-emitting device concerning a 1st embodiment of this indication. FIG. 1 is a plan view of relevant parts showing a substrate of a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 7 is a plan view of relevant parts showing one example of a method of manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure. It is principal part sectional drawing in alignment with the XII-XII line of FIG. FIG. 7 is a plan view of relevant parts showing one example of a method of manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure. It is principal part sectional drawing which follows the XIV-XIV line of FIG. FIG. 7 is a main-portion cross-sectional view showing an example of a method of manufacturing a semiconductor light-emitting device according to the first embodiment of the present disclosure. FIG. 7 is a plan view of relevant parts showing one example of a method of manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure. It is principal part sectional drawing in alignment with the XVII-XVII line of FIG. FIG. 7 is a plan view of relevant parts showing one example of a method of manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure. It is principal part sectional drawing in alignment with the XIX-XIX line of FIG. FIG. 7 is a cross-sectional view of essential parts showing a usage example of the semiconductor light emitting device according to the first embodiment of the disclosure. It is a principal part expanded sectional view showing the 1st modification of the semiconductor light-emitting device concerning a 1st embodiment of this indication. It is a principal part expanded sectional view showing the 2nd modification of the semiconductor light-emitting device concerning a 1st embodiment of this indication. It is a principal part expanded sectional view showing the 3rd modification of the semiconductor light-emitting device concerning a 1st embodiment of this indication. It is a principal part top view showing the 4th modification of the semiconductor light-emitting device concerning a 1st embodiment of this indication. It is a principal part top view showing a semiconductor light-emitting device concerning a 2nd embodiment of this indication. It is sectional drawing in alignment with the XXVI-XXVI line of FIG. It is a principal part top view showing a semiconductor light-emitting device concerning a 3rd embodiment of this indication. It is sectional drawing which follows the XXVIII-XXVIII line of FIG. It is a top view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a principal part top view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a bottom view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. FIG. 30 is a cross-sectional view taken along the line XXXII-XXXII in FIG. It is a principal part expanded sectional view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a front view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a principal part enlarged front view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a side view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a principal part enlarged side view showing a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a principal part top view showing a substrate of a semiconductor light-emitting device concerning a 4th embodiment of this indication. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device concerning a 4th embodiment of this indication. FIG. 40 is a cross-sectional view taken along the line XL-XL in FIG. 39. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device concerning a 4th embodiment of this indication. It is sectional drawing in alignment with the XLII-XLII line of FIG. It is principal part sectional drawing which shows an example of the manufacturing method of the semiconductor light-emitting device concerning 4th Embodiment of this indication. It is principal part sectional drawing which shows an example of the manufacturing method of the semiconductor light-emitting device concerning 4th Embodiment of this indication. It is a principal part expanded sectional view showing a semiconductor light-emitting device concerning a 5th embodiment of this indication. It is a principal part top view showing a semiconductor light-emitting device concerning a 6th embodiment of this indication. FIG. 47 is a cross-sectional view along the line XLVII-XLVII of FIG. 46.

  Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

  The terms "first", "second", "third" and the like in the present disclosure are merely used with labels, and are not necessarily intended to permutate those objects. .

First Embodiment
1 to 10 show a semiconductor light emitting device according to a first embodiment of the present disclosure. The semiconductor light emitting device A1 of the present embodiment includes a substrate 1, a semiconductor light emitting element 2 and a resin portion 3. In these figures, the x direction corresponds to the first direction, the y direction corresponds to the second direction, and the z direction corresponds to the thickness direction. The x, y and z directions are perpendicular to one another. The shape and size of the semiconductor light emitting device A1 are not particularly limited, and in the present embodiment, the dimension in the x direction is about 0.7 to 2.5 mm, the dimension in the y direction is about 0.4 to 1.0 mm, and the dimension in the z direction Is about 0.15 to 0.3 mm, and is rectangular in the z direction.

  FIG. 1 is a plan view showing a semiconductor light emitting device A1. FIG. 2 is a plan view of relevant parts showing the semiconductor light emitting device A1. FIG. 3 is a bottom view showing the semiconductor light emitting device A1. FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. FIG. 5 is an enlarged sectional view of an essential part showing the semiconductor light emitting device A1. FIG. 6 is a front view showing the semiconductor light emitting device A1. FIG. 7 is an enlarged front view of an essential part showing the semiconductor light emitting device A1. FIG. 8 is a side view showing the semiconductor light emitting device A1. FIG. 9 is an enlarged side view of an essential part showing the semiconductor light emitting device A1. FIG. 10 is a plan view of relevant parts showing the substrate 1 of the semiconductor light emitting device A1. As understood from the IV-IV line in FIG. 1, the lateral direction in FIG. 4 includes a portion that is generally along the x direction but does not exactly match the x direction. The same applies to FIG.

  The substrate 1 supports the semiconductor light emitting element 2 and forms a conduction path to the semiconductor light emitting element 2. The substrate 1 has a base 11, a conductor layer 12 and an insulating layer 13.

  The base 11 is a part that is a base of the substrate 1 and is made of, for example, an insulating material such as a glass epoxy resin. The substrate 11 has a substrate surface 111, a substrate back surface 112, a pair of substrate first side surfaces 113, a pair of substrate second side surfaces 114, and a plurality of substrate third side surfaces 115.

  The substrate surface 111 is a surface facing one side in the z direction. The substrate back surface 112 is a surface facing the other side opposite to the substrate surface 111 in the z direction. In the illustrated example, the substrate surface 111 is a flat surface.

  The pair of base material first side surfaces 113 are spaced apart from each other in the x direction and perpendicular to the x direction. The substrate first side surface 113 connects the substrate surface 111 and the substrate back surface 112. In the illustrated example, the substrate back surface 112 is a flat surface.

  The pair of base material second side surfaces 114 are spaced apart from one another in the y direction and perpendicular to the y direction. The substrate second side surface 114 connects the substrate surface 111 and the substrate back surface 112.

  The base material third side surface 115 connects the base material surface 111 and the base material back surface 112, and is a surface which is recessed inward from the base material first side surface 113 in the z-direction view. In the present embodiment, the base material third side surface 115 is recessed in the x direction with respect to the base material first side surface 113. Further, in the present embodiment, the base material third side surface 115 is interposed between the base material first side surface 113 and the base material second side surface 114 adjacent to each other. Moreover, the base material third side surface 115 is a surface which is recessed inward from the base material second side surface 114 in the z direction view, and in the present embodiment, in the y direction inward with respect to the base material second side surface 114 It's recessed. In the present embodiment, the number of the plurality of base material third side surfaces 115 is four. The four base third side faces 115 include a pair of base third side faces 115. The base material third side surface 115 is substantially in the shape of a quarter circle when viewed in the z direction.

  The conductor layer 12 constitutes a conduction path to the semiconductor light emitting element 2, and is formed on the base 11. Conductor layer 12 has, for example, a Cu layer or the like formed by plating. In addition, an Au layer formed by plating, for example, may be provided in a portion of the conductor layer 12 exposed from the insulating layer 13. The conductor layer 12 has a front surface portion 121, a back surface portion 122 and four side surface portions 123.

  The surface portion 121 is a portion formed on the substrate surface 111 of the substrate 11. In the present embodiment, the surface portion 121 includes four surface first portions 1211, a surface second portion 1212, a pair of surface third portions 1213, a plurality of connecting portions 1214, and a connecting portion 1215. In addition, the dashed-two dotted line (imaginary line) in FIG. 10 shows the boundary of four surface 1st part 1211, surface 2nd part 1212, a pair of surface 3rd part 1213, several connection parts 1214, and connection part 1215 for convenience. ing.

  The surface first portion 1211 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quadrilateral ring shape in the z direction. In addition, the surface first portion 1211 reaches both of the base first side 113 and the base second side 114. In the present embodiment, four surface first portions 1211 are formed corresponding to the four base material third side surfaces 115.

  The surface second portion 1212 is provided substantially at the center of the substrate surface 111 and is a portion for mounting the semiconductor light emitting element 2. When the semiconductor light emitting element 2 is directly mounted on the base 11, the surface portion 121 may not have the second surface portion 1212. In the illustrated example, the surface second portion 1212 is substantially rectangular in the z direction.

  The pair of front surface third portions 1213 are disposed apart in the x direction with the front surface second portion 1212 interposed therebetween. The third surface portion 1213 is a portion used to electrically connect the surface portion 121 and the semiconductor light emitting element 2. In the illustrated example, the surface third portion 1213 has a substantially rectangular shape. Further, in the illustrated example, the surface third portion 1213 is separated from the substrate first side surface 113 of the substrate 11.

  The plurality of connecting portions 1214 are portions that connect the adjacent surface first portion 1211 and the surface third portion 1213. In the illustrated example, the number of connection portions 1214 is four, and each has a strip shape extending in the y direction. Further, in the illustrated example, the connecting portion 1214 is separated from the base first side 113 of the base 11.

  The connecting portion 1215 connects the surface second portion 1212 and the connecting portion 1214. In the illustrated example, the connecting portion 1215 extends in the x direction. In the illustrated example, the connecting portion 1215 is spaced apart from the substrate second side surface 114 of the substrate 11.

  The back surface portion 122 is a portion formed on the substrate back surface 112 of the substrate 11. In the present embodiment, the back surface portion 122 has four back surface first portions 1221 and a pair of back surface second portions 1222. In addition, the dashed-two dotted line (imaginary line) in FIG. 3 has shown the boundary of four back surface 1st parts 1221 and a pair of back surface 2nd parts 1222 for convenience.

  The back surface first portion 1221 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quadrilateral ring shape in the z direction. In addition, the first back surface portion 1221 reaches both the first base side surface 113 and the second base side surface 114. In the present embodiment, four back surface first portions 1221 are formed corresponding to the four base material third side surfaces 115.

  The pair of back surface second portions 1222 are provided separately from each other in the x direction. The back surface second portion 1222 is connected to the back surface first portion 1221 adjacent in the y direction. The pair of back second portions 1222 is used as an electrode, for example, when the semiconductor light emitting device A1 is mounted on a circuit board (not shown) or the like.

  Four side surface portions 123 are formed on the four base material third side surfaces 115, and each cover the four base material third side surfaces 115. In the present embodiment, the side surface portion 123 covers substantially the entire third substrate side surface 115. The side surface portion 123 is connected to the surface first portion 1211 of the surface portion 121 and the back surface first portion 1221 of the back surface portion 122.

  The insulating layer 13 is a layer made of an insulating material, covers a part of the conductor layer 12 and exposes the remaining part. The material etc. of the insulating layer 13 are not particularly limited, and in the present embodiment, it is, for example, a solder resist. Further, in the illustrated example, the insulating layer 13 is formed by pressure bonding a sheet-like (film-like) solder resist to the substrate 11. The insulating layer 13 includes four insulating layer first portions 131, four insulating layer second portions 132, a plurality of insulating layer third portions 133, and a pair of connecting portions 135. The two-dot chain lines (imaginary lines) in FIGS. 2, 5, 7 and 9 indicate four insulating layer first portions 131, four insulating layer second portions 132, plural insulating layer third portions 133 and The boundaries of the pair of connecting portions 135 are shown for the sake of convenience.

  In the present embodiment, the back surface insulating layer 137 is provided on the back surface 112 of the base 11. The back surface insulating layer 137 is provided between the pair of back surface second portions 1222, and is provided, for example, to visually recognize the polarity of the semiconductor light emitting device A1. The back surface insulating layer 137 may be formed by the same method as the insulating layer 13 or may be formed by a different method.

  The four insulating layer first portions 131 are provided corresponding to the four base material third side surfaces 115. The insulating layer first portion 131 is located outward with respect to the base material third side surface 115 in the z direction. In the illustrated example, the insulating layer first portion 131 has a quadrilateral shape in the z direction.

  The four insulating layer second portions 132 are provided corresponding to the four base material third side surfaces 115. The insulating layer second portion 132 is formed on the surface first portion 1211 of the surface portion 121 of the conductor layer 12 and is a portion overlapping the surface first portion 1211 in the z direction, covering the surface first portion 1211 There is. In the illustrated example, the insulating layer second portion 132 has a quarter ring shape in the z direction. Further, in the illustrated example, the thickness of the insulating layer second portion 132 is thinner than the thickness of the insulating layer first portion 131. In addition, the thickness of the insulating layer second portion 132 is thicker than the thickness of the surface first portion 1211 of the conductor layer 12.

  The insulating layer third portion 133 is adjacent to the insulating layer second portion 132 and is in contact with the substrate surface 111 of the substrate 11. In other words, the conductor layer 12 is not interposed between the insulating layer third portion 133 and the substrate surface 111 of the substrate 11.

  The connecting portion 135 connects the insulating layer third portions 133 adjacent to each other in the y direction. In the illustrated example, the connection portion 135 is a strip extending in the y direction. Further, in the illustrated example, the connecting portion 135 reaches the first base side surface 113 of the base 11.

  The insulating layer 13 has a pair of insulating layer first side surfaces 171 and two pairs of insulating layer second side surfaces 172. The pair of insulating layer first side surfaces 171 are spaced apart from each other in the x direction and perpendicular to the x direction. The pair of insulating layer first side surfaces 171 is flush with the pair of base material first side surfaces 113 of the base 11. The two pairs of insulating layer second side surfaces 172 are spaced apart from one another in the y direction and perpendicular to the y direction. The two pairs of insulating layer second side surfaces 172 are flush with the pair of base material second side surfaces 114 of the base 11.

  As shown in FIG. 5, FIG. 7 and FIG. 9, the insulating layer 13 comprises an insulating layer first surface 141, an insulating layer second surface 142, an insulating layer third surface 143, an insulating layer fourth surface 144, and an insulating layer fifth A surface 145, an insulating layer sixth surface 146, an insulating layer seventh surface 147, an insulating layer eighth surface 148, and an insulating layer ninth surface 149 are provided.

  The insulating layer first surface 141 is a surface of the insulating layer first portion 131 located on one side (upper side in the drawing) in the z direction. In the illustrated example, the insulating layer first surface 141 is a concave surface located on the other side in the z direction as it is separated from the base material third side surface 115 in the z direction. The insulating layer second surface 142 is a surface of the insulating layer second portion 132 located on one side (upper side in the drawing) in the z direction. In the illustrated example, the insulating layer second surface 142 is a substantially flat surface along the xy plane.

  The insulating layer third surface 143 is a surface of the insulating layer third portion 133 located on one side in the z direction. In the illustrated example, the insulating layer third surface 143 is a curved surface gently curved so as to be positioned on the other side in the z direction as it is separated from the insulating layer second surface 142 in the z direction. The insulating layer fifth surface 145 is a surface facing the side of the insulating layer third portion 133 that is separated from the insulating layer second portion 132 in the direction perpendicular to the z direction, and is along the z direction. The insulating layer fourth surface 144 is interposed between the insulating layer third surface 143 and the insulating layer fifth surface 145, and is formed of a convex curved surface. The insulating layer sixth surface 146 is interposed between the insulating layer fifth surface 145 and the substrate surface 111 and is in contact with the substrate surface 111. The insulating layer fifth surface 145 is configured by a convex curved surface that is convex obliquely downward. The boundary between the insulating layer fifth surface 145 and the substrate surface 111 is located closer to the substrate third side surface 115 than the insulating layer fifth surface 145 in the z direction.

  The insulating layer seventh surface 147 and the insulating layer eighth surface 148 are surfaces of the insulating layer first portion 131 located on the other side in the z direction (lower side in the drawing). The insulating layer seventh surface 147 is separated from the base material third side surface 115 in the z direction, and is in contact with the boundary between the insulating layer first side surface 171 and the insulating layer second side surface 172. In the illustrated example, the insulating layer first side surface 171 is located on one side in the z direction with respect to the substrate back surface 112. The insulating layer eighth surface 148 is interposed between the insulating layer seventh surface 147 and the base material third side surface 115. In the illustrated example, the insulating layer seventh surface 147 is located on the other side in the z direction with respect to the insulating layer eighth surface 148. The insulating layer eighth surface 148 is a convex curved surface having a curvature smaller than that of the insulating layer seventh surface 147. The boundary between the insulating layer eighth surface 148 and the base material third side surface 115 is located on one side in the z direction with respect to the boundary between the insulating layer seventh surface 147 and the insulating layer eighth surface 148.

  As shown in FIG. 9, the insulating layer ninth surface 149 is a surface of the connecting portion 135 located on one side in the z direction (upper side in the drawing). The insulating layer ninth surface 149 is connected to the insulating layer third surface 143. The insulating layer ninth surface 149 is a flat surface along the xy plane as compared to the insulating layer third surface 143.

  As shown in FIGS. 2 and 4 to 9, the substrate 1 includes four insulating layer first regions 161, four insulating layer second regions 162, a pair of insulating layer third regions 163, and a pair of insulating layers fourth It has a region 164.

  The insulating layer first region 161 is a region included in the insulating layer first surface 141 of the insulating layer 13, and in the present embodiment, the insulating layer first side surface 171, the insulating layer second side surface 172, and the insulating layer first surface It is an area where 141 intersects. In the illustrated example, the insulating layer first region 161 is located at the center where the radii of the quarter circular insulating layer first portion 131 (insulating layer first surface 141) intersect in the z direction.

  The insulating layer second region 162 is a region included in the insulating layer second surface 142. In the illustrated example, the insulating layer second region 162 is a region overlapping with the base material third side surface 115 in the z-direction view, and has a quadrilateral shape in the z-direction view.

  The insulating layer third region 163 is a region overlapping the semiconductor light emitting element 2 when viewed in the y direction at the boundary between the substrate surface 111 and the substrate second side surface 114. In the illustrated example, the insulating layer third region 163 is located at the center of the boundary between the substrate surface 111 and the substrate second side surface 114 in the x direction.

  The insulating layer fourth region 164 is a region overlapping the semiconductor light emitting element 2 in the x direction as viewed at the z direction one side edge of the insulating layer first side surface 171. In the illustrated example, the insulating layer fourth region 164 is located at the y-direction center of the z-direction one side edge of the insulating layer first side surface 171.

  As shown in FIGS. 5, 7 and 9, the insulating layer first region 161 is located on the other side in the z direction with respect to the insulating layer second region 162. In the illustrated example, the insulating layer first region 161 is located on the other side in the z direction with respect to the conductor layer first surface 124 of the surface first portion 1211 of the conductor layer 12. Further, in the illustrated example, the insulating layer first region 161 is located on the other side in the z direction with respect to the substrate surface 111 of the substrate 11.

  The semiconductor light emitting element 2 is a light source of the semiconductor light emitting device A1, and in the present embodiment, has an element body 21, a first electrode 22 and a second electrode 23. The element body 21 has a semiconductor layer made of, for example, an InGan semiconductor or the like. The first electrode 22 is, for example, a cathode electrode, and the second electrode 23 is, for example, an anode electrode.

  In the present embodiment, the semiconductor light emitting element 2 is bonded to the surface second portion 1212 of the surface portion 121 of the conductor layer 12 by the bonding material 25, for example. The bonding material 25 is, for example, Ag paste or solder.

  The first electrode 22 is connected to one surface third portion 1213 by a wire 28. The wire 28 is made of, for example, Au, and has a first bonding portion 281 and a second bonding portion 282. The first bonding portion 281 is a portion of the wire 28 joined to the surface third portion 1213. The second bonding portion 282 is a portion of the wire 28 bonded to the first electrode 22.

  The second electrode 23 is connected to the other surface third portion 1213 by a wire 29. The wire 29 is made of, for example, Au, and has a first bonding portion 291 and a second bonding portion 292. The first bonding portion 291 is a portion of the wire 29 joined to the third surface portion 1213. The second bonding portion 292 is a portion of the wire 29 joined to the second electrode 23.

  The resin portion 3 covers the semiconductor light emitting element 2 and is made of a material that transmits light from the semiconductor light emitting element 2. In the present embodiment, the resin portion 3 is formed on the substrate surface 111 side (one side in the z direction) of the substrate 1 and covers the substrate surface 111, the surface portion 121 of the conductor layer 12 and the insulating layer 13. There is.

  The material of the resin part 3 is not particularly limited, as long as it allows the light from the semiconductor light emitting element 2 to pass through, for example, transparent epoxy resin, silicone resin, etc. are appropriately selected. Further, in the present embodiment, the resin portion 3 contains a fluorescent material. The fluorescent material emits light of a wavelength different from that of the light from the semiconductor light emitting device 2 by being excited by the light from the semiconductor light emitting device 2. For example, when the semiconductor light emitting element 2 emits blue light, the fluorescent material emits yellow light. Thus, the semiconductor light emitting device A1 emits, for example, white light.

  As shown in FIGS. 1 and 4 to 9, in the present embodiment, the resin portion 3 has a resin surface 31, a pair of first resin side surfaces 32 and a pair of second resin side surfaces 33.

  The resin surface 31 is a surface directed to one side in the z direction. The pair of resin first side surfaces 32 are surfaces which are separated from each other in the x direction, and are perpendicular to the x direction in the present embodiment. In the illustrated example, the resin first side surface 32 is flush with the base material first side surface 113 of the base material 11 and the insulating layer first side surface 171 of the insulating layer 13. The pair of resin second side surfaces 33 are surfaces which are separated from each other in the y direction, and are perpendicular to the y direction in the present embodiment. In the illustrated example, the resin second side surface 33 is flush with the base material second side surface 114 of the base material 11 and the insulating layer second side surface 172 of the insulating layer 13.

  The resin portion 3 includes four resin first areas 361, four resin second areas 362, a resin third area 363, a pair of resin fourth areas 364, and a pair of resin fifth areas 365.

  The resin first region 361 is a region of the resin surface 31 overlapping the insulating layer first region 161 in the z direction. The resin second region 362 is a region of the resin surface 31 which overlaps with the insulating layer second region 162 in the z direction. The number of resin first regions 361 is four, corresponding to the number of insulating layer first regions 161 being four. Further, the number of resin second regions 362 is four, corresponding to the number of insulating layer second regions 162 being four.

  The resin third region 363 is a region of the resin surface 31 overlapping the semiconductor light emitting element 2 in the z direction. In the illustrated example, the resin third region 363 is located at the center of the resin surface 31.

  The pair of resin fourth regions 364 is a region of the resin surface 31 overlapping the pair of insulating layer third regions 163 in the z direction. In the illustrated example, the resin fourth region 364 is at the boundary between the resin surface 31 and the resin second side surface 33, and is located substantially at the center in the x direction. The pair of resin fifth regions 365 is a region of the resin surface 31 overlapping the pair of insulating layer fourth regions 164 in the z direction. In the illustrated example, the fifth resin region 365 is at the boundary between the resin surface 31 and the first resin side surface 32, and is located substantially at the center in the y direction.

  As shown in FIGS. 4 to 9, the first distance D1 which is the distance between the insulating layer first region 161 and the resin first region 361 in the z direction is the distance between the insulating layer second region 162 and the resin second region 362 It is larger than the second distance D2 which is the distance in the z direction. A third distance D3 which is a distance between the insulating layer third region 163 and the resin fourth region 364 is smaller than the first distance D1 and larger than the second distance D2. A fourth distance D4 which is a distance between the insulating layer fourth region 164 and the resin fifth region 365 is smaller than the first distance D1 and larger than the second distance D2.

  As shown in FIGS. 4 to 9, in the present embodiment, the resin first region 361 is located on one side in the z direction (upper side in the z direction) than the resin second region 362. Further, the resin first region 361 and the resin second region 362 are located on one side in the z direction (upper side in the z direction) than the resin third region 363. Thereby, the cross-sectional shape (linear shape) of the resin surface 31 appearing in FIG. 4 is a curve which is gently recessed on the other side in the z direction (lower side in the z direction).

  Further, the resin first region 361 and the resin second region 362 are located on one side in the z direction (upper side in the z direction) than the resin fourth region 364. As a result, as shown in FIG. 6, the upper end edge of the resin second side surface 33 is a curve gently recessed toward the other side in the z direction (downward in the z direction).

  In addition, the resin first region 361 and the resin second region 362 are located on one side in the z direction (upper side in the z direction) than the resin fifth region 365. As a result, as shown in FIG. 8, the upper end edge of the resin first side surface 32 is a curve that gently dents on the other side in the z direction (downward in the z direction).

  As described above, in the resin surface 31 of the present embodiment, the four resin first regions 361 are located most on one side in the z direction, and the resin third region 363, the pair of resin fourth regions 364 and the pair of resin Five regions 365 are curved surfaces positioned on the other side of the four resin first regions 361 in the z direction. Also, the four resin second regions 362 are located between the four resin first regions 361 and the third resin region 363, the pair of resin fourth regions 364 and the pair of resin fifth regions 365 in the z direction. ing.

  Next, an example of a method of manufacturing the semiconductor light emitting device A1 will be described below with reference to FIGS.

  First, a substrate material 110 shown in FIGS. 11 and 12 is prepared. The substrate material 110 is to be the plurality of substrates 11 and is substantially equivalent to one in which the plurality of substrates 11 are arranged in a matrix in the x direction and y direction. A plurality of through holes 1150 are formed in the substrate material 110. The through hole 1150 is a portion that becomes the base material third side surface 115 by cutting the substrate material 110.

  The conductor layer 120 and the insulating layer 130 are formed on the substrate material 110. The conductor layer 120 has a portion to be a portion of the conductor layer 12 described above. The insulating layer 130 has a portion to be each portion of the insulating layer 13 described above. Conductor layer 120 is formed, for example, by plating. The insulating layer 130 is formed, for example, by pressure-bonding a sheet-like (film-like) solder resist to the substrate material 110.

  As shown in FIG. 12, the insulating layer first portion 131 of the insulating layer 130 blocks the through hole 1150. Due to the above-described pressure bonding, the insulating layer second portion 132 is thinner than the insulating layer first portion 131. The insulating layer first portion 131 has a substantially constant thickness, and has a flat plate shape along the xy plane.

  Next, as shown in FIGS. 13 and 14, the plurality of semiconductor light emitting elements 2 are bonded. This bonding is performed by bonding the element main body 21 of the semiconductor light emitting element 2 to the surface second portion 1212 of the conductor layer 120 with the bonding material 25. In addition, the first electrode 22 and the second electrode 23 of the element main body 21 and the pair of surface third portions 1213 are connected by the wire 28 and the wire 29.

  Next, as shown in FIG. 14, the mold 71 is set. The mold 71 is for forming a cavity for resin molding with the substrate surface 111 of the substrate material 110.

  Next, as shown in FIG. 15, the cavity of the mold 71 is filled with a resin material. At this time, the insulating layer 130 is heated and softened by the resin material having a relatively high temperature. Then, the filling pressure of the resin material acts on the softened insulating layer 130. As a result, the insulating layer first portion 131 of the insulating layer 130 is deformed so as to bulge to the other side in the z direction (downward in the z direction). Thereby, the insulating layer first portion 131 and the mold 71 are separated. In the figure, the distance D0, which is the distance between the portion of the insulating layer first portion 131 most distant from the mold 71 and the mold 71 in the z direction, is larger than the second distance D2 described above. Further, in the illustrated example, the insulating layer first portion 131 is deformed such that a portion of the upper surface is positioned on the other side in the z direction with respect to the substrate surface 111. The resin material 30 is formed by curing the resin material.

  When the filling of the resin material is completed, as shown in FIGS. 16 and 17, the mold 71 is removed. FIG. 17 corresponds to the state immediately after the mold 71 is removed. In this state, the resin material 30 and the insulating layer 130 are at a temperature relatively higher than the ambient temperature such as the normal temperature. The resin surface 31 of the resin material 30 takes over the shape of the mold 71 and is a flat surface extending in the xy plane.

  From this state, as the resin material 30 and the insulating layer 130 are cooled, the hardness of the insulating layer 130 starts to recover. By this re-hardening, the insulating layer first portion 131 which has been deformed into a shape that bulges to the other side in the z direction shows a behavior of returning to a flat shape along the xy plane. As a result, the portion of the resin material 30 overlapping the insulating layer first portion 131 in the z-direction view and the peripheral portion thereof are pushed up to one side (upper side) in the z-direction. As a result, the resin surface 31 of the resin material 30 has a curved surface shape in which the portion overlapping with the insulating layer first portion 131 (the third substrate side surface 1151) in the z direction is expanded to one side in the z direction than the peripheral portion. .

  After this, for example, the substrate material 110, the conductor layer 120, the insulating layer 130, and the resin material 30 are cut along the cutting line Cx and the cutting line Cy in the figure. Thereby, a plurality of semiconductor light emitting devices A1 are obtained.

  Next, the operation of the semiconductor light emitting device A1 will be described.

  According to the present embodiment, as shown in FIGS. 4 to 9, the first distance D1 is larger than the second distance D2. As a result of the light emission test of this type of semiconductor light emitting device, when the portion having the first distance D1 is at a position farther from the semiconductor light emitting element 2 than the second distance D2, the central portion of the semiconductor light emitting device A1 in z direction The phenomenon that the color tone of the light L in and the end portion is made more uniform was found out. Therefore, according to the semiconductor light emitting device A1, it is possible to suppress the variation in color tone.

  The resin portion 3 contains a fluorescent material, and diffuses and transmits the light from the semiconductor light emitting element 2. The portion of the resin portion 3 which is the first distance D1 is disposed on the end side of the semiconductor light emitting element 2 in the z direction. The light traveling from the semiconductor light emitting element 2 to this portion is largely inclined to the z direction or travels at an angle close to a right angle to the z direction. By providing the portion having the first distance D1 on the end side of the resin portion 3, an effect of diffusing such light and directing it to one side in the z direction can be expected. This is preferable for increasing the luminance of the semiconductor light emitting device A1.

  In the present embodiment, the resin first region 361 is located on one side in the z direction relative to the resin third region 363. Thus, the resin surface 31 has a shape in which a portion near the center where the semiconductor light emitting element 2 is located is recessed with respect to the portion where the base material third side surface 115 is provided. Thereby, as shown in FIG. 4 and FIG. 5, the light L emitted from the resin part 3 can be refracted by the resin surface 31, and the directivity to one side in the z direction can be enhanced.

  FIG. 20 shows an example of use of the semiconductor light emitting device A1. In this example, in preparation for mounting the semiconductor light emitting device A1 on a circuit board or the like, a plurality of semiconductor light emitting devices A1 are transported and stored using the container 8. The housing 8 has a case 81 and a seat 82. The case 81 has a plurality of recesses 811. The recess 811 is sized and shaped to accommodate the semiconductor light emitting device A1. The sheet 82 is releasably attached to the case 81 and closes the plurality of recesses 811.

  When a plurality of semiconductor light emitting devices A1 are transported or stored by the container 8, as in the case of the semiconductor light emitting device A1 illustrated on the leftmost side in the figure, it is in contact with the bottom of the recess 811 or illustrated at the center in the figure. As in the case of the semiconductor light emitting device A1 described above, it takes a state close to the sheet 82 or the like. If the resin surface 31 of the resin portion 3 has a flat shape, the resin surface 31 may adhere to the sheet 82 when the resin surface 31 approaches the sheet 82. When the semiconductor light emitting device A1 is taken out, the sheet 82 is peeled off and the concave portion 811 is opened as in the semiconductor light emitting device A1 illustrated on the rightmost side in the drawing. At this time, when the semiconductor light emitting device A1 is stuck to the sheet 82, it is difficult to take out the semiconductor light emitting device A1 appropriately. In particular, when the semiconductor light emitting device A1 is automatically taken out by a device or the like, it causes an operation error.

  According to the present embodiment, the resin surface 31 of the resin portion 3 has a shape in which the first resin region 361 is positioned above the third resin region 363. Further, as shown in FIGS. 6 and 8, the fourth resin region 364 and the fifth resin region 365 are located below the first resin region 361. Therefore, a space is formed between the resin third area 363, the pair of resin fourth areas 364 and the pair of resin fifth areas 365, and the sheet 82. Since this space does not form a sealed structure, it is possible to prevent the resin surface 31 from adhering to the sheet 82. Therefore, the semiconductor light emitting device A1 can be properly taken out.

  In the present embodiment, the base material third side surfaces 115 are provided at the four corners in the z-direction view, and the resin first regions 361 are provided at the corresponding four corners. Such a configuration is preferable for suppressing variation in color tone and for taking out properly.

  The pair of resin first side surfaces 32 and the pair of resin second side surfaces 33 of the resin portion 3 are flush with the pair of base material first side surfaces 113 of the base 11 and the pair of base material second side surfaces 114. That is, the resin part 3 is a structure which overlaps with all the base materials 11 in z direction view. Thus, the volume of the resin portion 3 can be increased, and the semiconductor light emitting element 2 having a larger size than the size of the base 11 can be provided. In the present embodiment, the wire 28 and the wire 29 are connected to the semiconductor light emitting element 2. The size of the semiconductor light emitting device A1 can be reduced while appropriately covering the wires 28 and 29 extending to the opposite sides in the x direction with the resin portion 3.

  As shown in FIG. 5, the insulating layer first region 161 is positioned on the other side in the z direction with respect to the substrate surface 111, so that the dimension in the z direction of the semiconductor light emitting device A1 is secured while securing a larger first distance D1. It can suppress becoming excessive.

  The insulating layer first portion 131 is a portion not supported by the base 11. The thickness of the insulating layer first portion 131 is thicker than the thickness of the insulating layer second portion 132. Therefore, even if the semiconductor light emitting device A1 is not supported by the base material 11, the insulating layer first portion 131 can be prevented from being erroneously damaged in the manufacturing process of the semiconductor light emitting device A1 or the like. In addition, since the thickness of the second insulating layer portion 132 is small, the dimension of the semiconductor light emitting device A1 in the z direction is reduced, and the semiconductor light emitting element 2 is insulated from the second insulating layer region 162 and the second resin region 362 The light L can be directed to the layer first area 161 and the resin first area 361.

  The insulating layer 13 has an insulating layer third portion 133. The insulating layer third portion 133 is directly bonded to the substrate surface 111 of the substrate 11. Generally, the insulating layer 13 made of resin or the like has higher bonding strength to the base 11 made of an insulating material such as resin than the conductive layer 12 made of metal. For this reason, peeling of the insulating layer 13 from the base 11 can be suppressed by the insulating layer third portion 133.

  The insulating layer sixth surface 146 is a curved surface having a shape that wraps inward toward the substrate surface 111 of the substrate 11. For this reason, a part of the resin part 3 gets into between the insulating layer sixth surface 146 and the substrate surface 111. Thereby, the behavior in which the resin portion 3 is separated from the base surface 111 of the base 11 can be suppressed. In particular, since the insulating layer third portion 133 is a portion having a high bonding strength to the base material 11, the insulating layer third portion 133 is suitable for suppressing separation of the resin portion 3.

  The insulating layer eighth surface 148 is a curved surface located on one side in the z direction toward the base material third side surface 115. Thereby, a larger region of the substrate third side surface 115 can be exposed from the insulating layer 13. Thus, when the semiconductor light emitting device A1 is mounted on a circuit board or the like, it is possible to add solder to the first back surface portion 1221 and attach it to a larger area of the third substrate side surface 115, thereby enhancing the mounting strength. be able to.

  The thickness of the surface first portion 1211 is thinner than the thickness of the insulating layer second portion 132. Thereby, the z-direction dimension of the semiconductor light emitting device A1 can be reduced. If the insulating layer second portion 132 is too thin, there is a possibility that the surface first portion 1211 may be exposed unintentionally. According to the present embodiment, such a situation can be avoided.

  According to the manufacturing method shown in FIGS. 11 to 19, the resin first region 361, the resin second region 362, the resin third region 363, the resin fourth region 364 and the mold 71 having a flat shape are used. It is possible to form a curved resin surface 31 having a resin fifth region 365. For this reason, there is no need to prepare a curved surface-shaped mold 71 corresponding to the resin surface 31. In addition, there is no need to perform mechanical processing or the like for forming the resin surface 31 into a curved surface. This is suitable for enhancing the manufacturing efficiency of the semiconductor light emitting device A1. Note that, unlike the present embodiment, the resin surface 31 may be finished to be a curved surface by machining or the like. Moreover, when it hardens | cures in the state shown in FIG. 17, the resin surface 31 becomes a flat shape unlike this embodiment. Even with such a configuration, when the first distance D1 is larger than the second distance D2, the effect of suppressing the variation in color tone can be expected.

  21-28 illustrate variations and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to the above embodiment are given the same reference numerals as the above embodiment.

First Embodiment First Modification
FIG. 21 shows a first modification of the semiconductor light emitting device A1. The semiconductor light emitting device A11 of the present modified example is different from the above-described example in the relative position of the insulating layer first region 161 in the z direction.

  In this modification, insulating layer first region 161 is located on one side in the z direction with respect to substrate surface 111 of substrate 11, and the conductor layer of substrate surface 111 and surface first portion 1211 in the z direction It is located between the first surface 124. Moreover, corresponding to this, the resin 1st area | region 361 of this example is further spaced apart to the z direction one side from the base-material surface 111 rather than the example mentioned above.

  According to this modification, in addition to the effects in the above-described example, the z-direction dimension of the semiconductor light emitting device A1 is large while the resin first region 361 is positioned on the z-direction one side with respect to the resin third region 363. It can suppress becoming too much.

First Embodiment Second Modification
FIG. 22 shows a second modification of the semiconductor light emitting device A1. The semiconductor light emitting device A12 of this modification is different from the above-described example in the relative position of the insulating layer first region 161 in the z direction.

  In the present modification, the insulating layer first region 161 is located on one side in the z direction with respect to the conductor layer first surface 124 of the surface first portion 1211. The insulating layer first region 161 is located between the conductor layer first surface 124 and the insulating layer second region 162 in the z direction. Moreover, corresponding to this, the resin 1st area | region 361 of this example is further spaced apart to the z direction one side from the base-material surface 111 rather than the example mentioned above.

  According to this modification, in addition to the effects in the above-described example, the resin first region 361 can be positioned on one side in the z direction with respect to the resin third region 363, and the directivity of the light L is To enhance the

<First Embodiment Third Modification>
FIG. 23 shows a third modification of the semiconductor light emitting device A1. In the semiconductor light emitting device A13 of this modification, the relative position of the insulating layer first region 161 in the z direction is different from that in the above-described example.

  In the present modification, the insulating layer first region 161 is located on one side in the z direction with respect to the insulating layer second region 162. Moreover, corresponding to this, the resin 1st area | region 361 of this example is further spaced apart to the z direction one side from the base-material surface 111 rather than the example mentioned above.

  According to this modification, in addition to the effect in the above-described example, the resin first region 361 can be positioned further to one side in the z direction with respect to the resin third region 363, and the directivity of the light L is It is suitable to raise the

First Modified Example of Fourth Embodiment
FIG. 24 shows a fourth modification of the semiconductor light emitting device A1. The semiconductor light emitting device A14 of this modification is different from the above-described example in the configuration of the insulating layer 13.

  In the present modification, the connecting portion 135 of the above-described example is not provided in the insulating layer 13. For this reason, the two insulating layer third portions 133 located on both sides in the y direction are not connected but separated from each other.

  Also in the present modification, the same effects as the effects in the above-described example can be obtained.

Second Embodiment
25 and 26 show a semiconductor light emitting device according to a second embodiment of the present disclosure. The semiconductor light emitting device A2 of the present embodiment is mainly different from the above-described embodiment in the number, the position, and the shape of the third substrate side surface 115. In FIG. 25, the resin portion 3 is omitted for the sake of understanding.

  In the present embodiment, the number of base material third side surfaces 115 is two. That is, the pair of base material third side surfaces 115 are provided separately from each other in the x direction. The substrate third side surface 115 is formed substantially at the center of the substrate 11 in the y direction. The shape of the base material third side surface 115 in the z direction is substantially semicircular.

  The insulating layer first portion 131 and the insulating layer second portion 132 of the insulating layer 13 are located approximately at the center of the substrate 11 in the y direction, corresponding to the position and the shape of the substrate third side surface 115. The z-direction shape of the insulating layer first portion 131 is substantially semicircular, and the z-direction shape of the insulating layer second portion 132 is substantially semi-annular.

  The pair of insulating layer first regions 161 are at both ends of the substrate 1 in the x direction, and are located substantially at the center in the y direction. The insulating layer second region 162 is semicircular when viewed in the z direction.

  In the semiconductor light emitting element 2, the first electrode 22 and the second electrode 23 are provided separately on the upper and lower surfaces of the element body 21 in the z direction. The first electrode 22 is bonded to the surface portion 121 by a conductive bonding material 25. The wire 29 is connected to the second electrode 23.

  The magnitude relationship between the first distance D1, the second distance D2, the third distance D3 and the fourth distance D4 in the present embodiment is the same as that of the semiconductor light emitting device A1. The relative positions of the pair of first resin regions 361, the pair of second resin regions 362, and the third resin region 363 in the z direction are the same as in the semiconductor light emitting device A1.

  Also according to this embodiment, it is possible to suppress the variation of the color tone. In addition, as understood from the present embodiment, the position and the number of the third substrate side surfaces 115 in the substrate 11 are not particularly limited.

Third Embodiment
27 and 28 illustrate a semiconductor light emitting device according to a third embodiment of the present disclosure. The semiconductor light emitting device A3 of this embodiment is configured such that the resin portion 3 does not overlap with the third substrate side surface 115 in the z direction. In FIG. 27, the resin part 3 is shown by an imaginary line for the convenience of understanding.

  The base material 11 of this embodiment is the structure substantially the same as the base material 11 of semiconductor light-emitting device A1. The pair of resin first side surfaces 32 of the resin portion 3 is located inward in the x direction with respect to the pair of base material first side surfaces 113 and the four base material third side surfaces 115 of the base material 11. The pair of first resin side surfaces 32 are inclined with respect to the z direction such that the distance between the first resin side surfaces 32 decreases toward the one side in the z direction. The pair of resin second side surfaces 33 is flush with the pair of base material second side surfaces 114 of the base 11.

  The semiconductor light emitting device 2 has, for example, the same configuration as the semiconductor light emitting device A2. The surface second portion 1212 and one surface first portion 1211 are connected by a connecting portion 1215. The connecting portion 1214 connects the adjacent surface first portions 1211 to each other. The surface third portion 1213 is connected to one surface first portion 1211 by a connecting portion 1215.

  In the present embodiment, the substrate 1 has a pair of insulating layer seventh regions 167 and an insulating layer eighth region 168. The pair of insulating layer seventh regions 167 is a region of the base surface 111 in contact with the pair of first resin side faces 32 of the resin portion 3 and is a linear region extending in the y direction. The insulating layer eighth region 168 is located between the pair of insulating layer seventh regions 167 in the x direction, and is a linear region extending in the y direction. In the illustrated example, the insulating layer eighth region 168 is located approximately at the center in the x direction of A3.

  The resin portion 3 has a pair of resin seventh areas 367 and a resin eighth area 368. The pair of seventh resin regions 367 is a region including the boundary between the resin surface 31 and the pair of first resin side surfaces 32, and is a linear region extending in the y direction. The resin eighth region 368 is a region overlapping with the insulating layer eighth region 168 in the z direction, and is a linear region extending in the y direction. In the present embodiment, the seventh distance D7, which is the distance between the insulating layer seventh region 167 and the resin seventh region 367 in the z direction, is the distance between the insulating layer eighth region 168 and the resin eighth region 368 in the z direction. And is larger than the eighth distance D8. In addition, the pair of resin seventh regions 367 are located on one side in the z direction with respect to the resin eighth region 368. The cross-sectional shape perpendicular to the y direction of the resin part 3 is constant. That is, resin surface 31 is a relatively shallow groove curved surface extending in the y direction.

  According to the present embodiment, since the resin surface 31 has the groove curved surface shape, the semiconductor light emitting device A3 can be prevented from adhering to the sheet 82 in the usage example described with reference to FIG. The semiconductor light emitting device A3 can be properly taken out.

  The semiconductor light emitting device according to the present disclosure is not limited to the embodiment described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be varied in design in many ways.

[Supplementary Note A1]
An insulating base material having a base surface facing the one side in the thickness direction and a back face of the base facing the other side in the thickness direction, a conductor layer formed on the base, and an insulation covering a part of the conductor layer A substrate having a layer,
A semiconductor light emitting device mounted on the substrate surface side of the substrate;
And a resin part which covers the semiconductor light emitting element and transmits light from the semiconductor light emitting element.
The substrate of the substrate connects the substrate surface and the substrate back surface, and a pair of substrate first side faces spaced apart in a first direction, and the substrate surface and the substrate back surface respectively And a pair of base material third side surfaces recessed toward the semiconductor light emitting element side relative to the base material first side surface in the thickness direction, and
The conductor layer has a surface portion formed on the surface of the base material and a side surface portion formed on the third side surface of the base material,
The surface portion has a surface first portion adjacent to the semiconductor light emitting element side with respect to the base material third side surface and connected to the side surface portion,
The insulating layer is a first insulating layer portion located on the opposite side to the semiconductor light emitting element with respect to the third substrate side in the thickness direction, and the surface of the conductor layer in the thickness direction And an insulating layer second portion overlapping the first portion;
The resin portion covers the insulating layer first portion and the insulating layer second portion of the insulating layer,
An insulating layer first region included in the insulating layer first surface in contact with the resin portion in the insulating layer first portion, and the insulating layer first region in the thickness direction view of the resin surface of the resin portion The first distance, which is the distance to the resin first region, is the insulating layer second region included in the insulating layer second surface in contact with the resin portion in the insulating layer second portion, and the resin surface of the resin portion The semiconductor light-emitting device, wherein the semiconductor light-emitting device is larger than a second distance which is a distance between the resin second region overlapping with the insulating layer second region in the thickness direction view.
[Supplementary Note A2]
The resin surface of the resin portion has a third resin region overlapping the semiconductor light emitting element in the thickness direction view,
The semiconductor light-emitting device according to claim A1, wherein the first resin region is located on one side in the thickness direction with respect to the third resin region in the thickness direction.
[Supplementary Note A3]
The semiconductor light-emitting device according to appendix A2, wherein the first resin region is located on one side in the thickness direction with respect to the second resin region in the thickness direction.
[Supplementary Note A4]
The base material of the substrate is a pair of base material second side surfaces which respectively connect the base material surface and the base material back surface and are separated in a first direction and a second direction perpendicular to the thickness direction. Having four said substrate third side,
The semiconductor light emitting device according to any one of appendices A1 to A3, wherein the base material third side surface is interposed between the base material first side surface and the base material second side surface.
[Supplementary Note A5]
The resin portion has a pair of resin first side surfaces that are flush with the pair of base material first side surfaces, and a pair of resin second side surfaces that are flush with the pair of base material second side surfaces. The semiconductor light-emitting device according to appendix A4.
[Supplementary Note A6]
The semiconductor according to appendix A5, wherein the insulating layer has an insulating layer first side surface flush with the base material first side surface, and an insulating layer second side surface flush with the base material second side surface Light emitting device.
[Supplementary Note A7]
The insulating layer first region is a region where the insulating layer first side surface, the insulating layer second side surface, and the insulating layer first surface intersect.
The semiconductor light-emitting device according to appendix A6, wherein the insulating layer second region overlaps the base material third side surface in the thickness direction view.
[Supplementary Note A8]
The resin surface of the resin portion has a resin fourth region which is a boundary with the resin second side surface and overlaps the semiconductor light emitting element in the first direction,
The semiconductor light-emitting device according to appendix A7, wherein the first resin region is located on one side in the thickness direction of the fourth resin region in the thickness direction.
[Supplementary Note A9]
The resin surface of the resin portion has a fifth resin region which is a boundary with the first resin side surface and overlaps the semiconductor light emitting element in the second direction,
The semiconductor light-emitting device according to appendix A7 or A8, wherein the first resin region is located on one side in the thickness direction with respect to the fifth resin region in the thickness direction.
[Supplementary Note A10]
The semiconductor light-emitting device according to any one of appendices A7 to A9, wherein the insulating layer first region is located on the other side in the thickness direction than the insulating layer second region.
[Supplementary Note A11]
The semiconductor light-emitting device according to appendix A10, wherein the insulating layer first region is located on the other side in the thickness direction with respect to the surface of the base material.
[Supplementary Note A12]
The semiconductor light-emitting device according to claim A10, wherein the insulating layer first region is located between the surface of the base and the first surface of the conductor layer of the surface first portion in the thickness direction.
[Supplementary Note A13]
The semiconductor light-emitting device according to appendix A10, wherein the insulating layer first region is located on one side in the thickness direction of the substrate surface and the first surface of the conductor layer of the surface first portion.
[Supplementary Note A14]
The semiconductor light-emitting device according to any one of appendices A7 to A9, wherein the insulating layer first region is located on one side in the thickness direction than the insulating layer second region.
[Supplementary Note A15]
The semiconductor light-emitting device according to any one of appendices A1 to A14, wherein the insulating layer has an insulating layer third portion adjacent to the insulating layer second portion and in contact with the base material surface.
[Supplementary Note A16]
The semiconductor light-emitting device according to appendix A15, wherein a thickness of the insulating layer third part is thicker than a thickness of the insulating layer second part.
[Supplementary Note A17]
The semiconductor light-emitting device according to appendix A16, wherein a thickness of the insulating layer second portion is thicker than a thickness of the surface first portion of the surface portion of the conductor layer.

Fourth Embodiment
29 to 38 illustrate a semiconductor light emitting device according to a fourth embodiment of the present disclosure. The semiconductor light emitting device A4 of the present embodiment includes the substrate 1, the semiconductor light emitting element 2 and the resin portion 3. In these figures, the x direction corresponds to the first direction, the y direction corresponds to the second direction, and the z direction corresponds to the thickness direction. The x, y and z directions are perpendicular to one another. The shape and size of the semiconductor light emitting device A4 are not particularly limited, and in the present embodiment, the dimension in the x direction is about 0.7 to 2.5 mm, the dimension in the y direction is about 0.4 to 1.0 mm, the dimension in the z direction Is about 0.15 to 0.3 mm, and is rectangular in the z direction.

  FIG. 29 is a plan view showing the semiconductor light emitting device A4. FIG. 30 is a plan view of relevant parts showing the semiconductor light emitting device A4. FIG. 31 is a bottom view showing the semiconductor light emitting device A4. 32 is a cross-sectional view taken along the line IV-IV in FIG. FIG. 33 is an enlarged sectional view of an essential part showing the semiconductor light emitting device A4. FIG. 34 is a front view showing a semiconductor light emitting device A4. FIG. 35 is an enlarged front view of main parts showing the semiconductor light emitting device A4. FIG. 36 is a side view showing the semiconductor light emitting device A4. FIG. 37 is an enlarged side view of an essential part showing the semiconductor light emitting device A4. FIG. 38 is a plan view of relevant parts showing the substrate 1 of the semiconductor light emitting device A4. As understood from the IV-IV line in FIG. 29, the lateral direction in FIG. 32 includes a portion that is generally along the x direction but does not exactly match the x direction. The same applies to FIG.

  The substrate 1 supports the semiconductor light emitting element 2 and forms a conduction path to the semiconductor light emitting element 2. The substrate 1 has a base 11, a conductor layer 12 and an insulating layer 13.

  The base 11 is a part that is a base of the substrate 1 and is made of, for example, an insulating material such as a glass epoxy resin. The substrate 11 has a substrate surface 111, a substrate back surface 112, a pair of substrate first side surfaces 113, a pair of substrate second side surfaces 114, and a plurality of substrate third side surfaces 115.

  The substrate surface 111 is a surface facing one side in the z direction. The substrate back surface 112 is a surface facing the other side opposite to the substrate surface 111 in the z direction. In the illustrated example, the substrate surface 111 is a flat surface.

  The pair of base material first side surfaces 113 are spaced apart from each other in the x direction and perpendicular to the x direction. The substrate first side surface 113 connects the substrate surface 111 and the substrate back surface 112. In the illustrated example, the substrate back surface 112 is a flat surface.

  The pair of base material second side surfaces 114 are spaced apart from one another in the y direction and perpendicular to the y direction. The substrate second side surface 114 connects the substrate surface 111 and the substrate back surface 112.

  The base material third side surface 115 connects the base material surface 111 and the base material back surface 112, and is a surface which is recessed inward from the base material first side surface 113 in the z-direction view. In the present embodiment, the base material third side surface 115 is recessed in the x direction with respect to the base material first side surface 113. Further, in the present embodiment, the base material third side surface 115 is interposed between the base material first side surface 113 and the base material second side surface 114 adjacent to each other. Moreover, the base material third side surface 115 is a surface which is recessed inward from the base material second side surface 114 in the z direction view, and in the present embodiment, in the y direction inward with respect to the base material second side surface 114 It's recessed. In the present embodiment, the number of the plurality of base material third side surfaces 115 is four. The four base material third side surfaces 115 include a pair of base material third side surfaces 115. The base material third side surface 115 is substantially in the shape of a quarter circle when viewed in the z direction.

  The conductor layer 12 constitutes a conduction path to the semiconductor light emitting element 2, and is formed on the base 11. Conductor layer 12 has, for example, a Cu layer or the like formed by plating. In addition, an Au layer formed by plating, for example, may be provided in a portion of the conductor layer 12 exposed from the insulating layer 13. The conductor layer 12 has a front surface portion 121, a back surface portion 122 and four side surface portions 123.

  The surface portion 121 is a portion formed on the substrate surface 111 of the substrate 11. In the present embodiment, the surface portion 121 includes four surface first portions 1211, a surface second portion 1212, a pair of surface third portions 1213, a plurality of connecting portions 1214, and a connecting portion 1215. The dashed-two dotted line (imaginary line) in FIG. 38 indicates the boundaries of the four surface first portions 1211, the surface second portions 1212, the pair of surface third portions 1213, the plurality of connecting portions 1214, and the connecting portion 1215 for convenience. ing.

  The surface first portion 1211 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quadrilateral ring shape in the z direction. In addition, the surface first portion 1211 reaches both of the base first side 113 and the base second side 114. In the present embodiment, four surface first portions 1211 are formed corresponding to the four base material third side surfaces 115.

  The surface second portion 1212 is provided substantially at the center of the substrate surface 111 and is a portion for mounting the semiconductor light emitting element 2. When the semiconductor light emitting element 2 is directly mounted on the base 11, the surface portion 121 may not have the second surface portion 1212. In the illustrated example, the surface second portion 1212 is substantially rectangular in the z direction.

  The pair of front surface third portions 1213 are disposed apart in the x direction with the front surface second portion 1212 interposed therebetween. The third surface portion 1213 is a portion used to electrically connect the surface portion 121 and the semiconductor light emitting element 2. In the illustrated example, the surface third portion 1213 has a substantially rectangular shape. Further, in the illustrated example, the surface third portion 1213 is separated from the substrate first side surface 113 of the substrate 11.

  The plurality of connecting portions 1214 are portions that connect the adjacent surface first portion 1211 and the surface third portion 1213. In the illustrated example, the number of connection portions 1214 is four, and each has a strip shape extending in the y direction. Further, in the illustrated example, the connecting portion 1214 is separated from the base first side 113 of the base 11.

  The connecting portion 1215 connects the surface second portion 1212 and the connecting portion 1214. In the illustrated example, the connecting portion 1215 extends in the x direction. In the illustrated example, the connecting portion 1215 is spaced apart from the substrate second side surface 114 of the substrate 11.

  The back surface portion 122 is a portion formed on the substrate back surface 112 of the substrate 11. In the present embodiment, the back surface portion 122 has four back surface first portions 1221 and a pair of back surface second portions 1222. The dashed-two dotted line (imaginary line) in FIG. 31 indicates the boundary between the four back first portions 1221 and the pair of back second portions 1222 for the sake of convenience.

  The back surface first portion 1221 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quadrilateral ring shape in the z direction. In addition, the first back surface portion 1221 reaches both the first base side surface 113 and the second base side surface 114. In the present embodiment, four back surface first portions 1221 are formed corresponding to the four base material third side surfaces 115.

  The pair of back surface second portions 1222 are provided separately from each other in the x direction. The back surface second portion 1222 is connected to the back surface first portion 1221 adjacent in the y direction. The pair of back surface second portions 1222 is used as an electrode, for example, when the semiconductor light emitting device A4 is mounted on a circuit board (not shown) or the like.

  Four side surface portions 123 are formed on the four base material third side surfaces 115, and each cover the four base material third side surfaces 115. In the present embodiment, the side surface portion 123 covers substantially the entire third substrate side surface 115. The side surface portion 123 is connected to the surface first portion 1211 of the surface portion 121 and the back surface first portion 1221 of the back surface portion 122.

  The insulating layer 13 is a layer made of an insulating material, covers a part of the conductor layer 12 and exposes the remaining part. The material etc. of the insulating layer 13 are not particularly limited. In the present embodiment, the insulating layer 13 has a first insulating layer 13A and a second insulating layer 13B. In addition, the insulating layer 13 may be comprised by three or more layers by further providing layers other than 1st insulating layer 13A and 2nd insulating layer 13B.

  The first insulating layer 13 </ b> A is in contact with the substrate surface 111 of the substrate 11. As a formation example of the first insulating layer 13A, for example, pressure bonding of a sheet-like (film-like) solder resist to the substrate 11 may be mentioned.

  The second insulating layer 13B is stacked on one side in the z direction with respect to the first insulating layer 13A. In the illustrated example, the second insulating layer 13B is in contact with the first insulating layer 13A. Another layer may be interposed between the first insulating layer 13A and the second insulating layer 13B. The second insulating layer 13B is formed, for example, by applying a resin material of a solder resist to the first insulating layer 13A and curing it.

  In the illustrated example, as shown in FIG. 33, the thickness ta of the first insulating layer 13A is thicker than the thickness tb of the second insulating layer 13B.

  The first insulating layer 13A has a pair of insulating layer first side surfaces 171 and two pairs of insulating layer second side surfaces 172. The pair of insulating layer first side surfaces 171 are spaced apart from each other in the x direction and perpendicular to the x direction. The pair of insulating layer first side surfaces 171 is flush with the pair of base material first side surfaces 113 of the base 11. The two pairs of insulating layer second side surfaces 172 are spaced apart from one another in the y direction and perpendicular to the y direction. The two pairs of insulating layer second side surfaces 172 are flush with the pair of base material second side surfaces 114 of the base 11.

  The second insulating layer 13B has two pairs of insulating layer third side surfaces 191 and two pairs of insulating layer fourth side surfaces 192. The two pairs of insulating layer third side surfaces 191 are spaced apart from one another in the x direction and perpendicular to the x direction. The two pairs of insulating layer third side surfaces 191 are flush with the pair of insulating layer first side surfaces 171 of the first insulating layer 13A and the pair of base first surface 113 of the base material 11. The two pairs of insulating layer fourth side surfaces 192 are spaced apart from one another in the y direction and perpendicular to the y direction. The two pairs of insulating layer fourth side surfaces 192 are flush with the two pairs of insulating layer second side surfaces 172 of the first insulating layer 13A and the pair of base second side surfaces 114 of the substrate 11.

  As shown in FIGS. 30 and 33, in the present embodiment, the edge 199 of the second insulating layer 13B corresponds to the third substrate side surface 115 of the substrate 11 and the surface portion 121 of the conductor layer 12 in the z direction. It is located between the edge 1219 of the first surface portion 1211. That is, the edge 199 overlaps the surface portion 121 in the z direction, and does not overlap the portion of the substrate surface 111 exposed from the surface portion 121.

  In the present embodiment, the insulating layer 13 includes four insulating layer first portions 131, four insulating layer second portions 132, a plurality of insulating layer third portions 133, a plurality of insulating layer fourth portions 134, and a pair of connections. It has a part 135. Note that the two-dot chain lines (imaginary lines) in FIGS. 30, 33, 35 and 37 indicate four insulating layer first portions 131, four insulating layer second portions 132, a plurality of insulating layer third portions 133, and The boundaries of the pair of connecting portions 135 are shown for the sake of convenience.

  In the present embodiment, the back surface insulating layer 137 is provided on the back surface 112 of the base 11. The back surface insulating layer 137 is provided between the pair of back surface second portions 1222, and is provided to visually recognize, for example, the polarity of the semiconductor light emitting device A4. The back surface insulating layer 137 may be formed by the same method as the insulating layer 13 or may be formed by a different method.

  The four insulating layer first portions 131 are provided corresponding to the four base material third side surfaces 115. The insulating layer first portion 131 is located outward with respect to the base material third side surface 115 in the z direction. In the illustrated example, the insulating layer first portion 131 has a quadrilateral shape in the z direction. In the present embodiment, the insulating layer first portion 131 is configured by a part of each of the first insulating layer 13A and the second insulating layer 13B.

  The four insulating layer second portions 132 are provided corresponding to the four base material third side surfaces 115. The insulating layer second portion 132 is formed on the surface first portion 1211 of the surface portion 121 of the conductor layer 12 and is a portion overlapping the surface first portion 1211 in the z direction. Further, in the present embodiment, the insulating layer second portion 132 is configured by a part of each of the first insulating layer 13A and the second insulating layer 13B. In the illustrated example, the insulating layer second portion 132 has a quarter ring shape in the z direction. The first thickness t 1 which is the thickness of the insulating layer first portion 131 is thicker than the second thickness t 2 which is the thickness of the insulating layer second portion 132. Further, the second thickness t 2 of the insulating layer second portion 132 is thicker than the thickness of the surface first portion 1211 of the conductor layer 12.

  The insulating layer third portion 133 is adjacent to the surface first portion 1211 and is in contact with the substrate surface 111 of the substrate 11. In other words, the conductor layer 12 is not interposed between the insulating layer third portion 133 and the substrate surface 111 of the substrate 11. In the present embodiment, the insulating layer third portion 133 is configured by only a part of the first insulating layer 13A.

  The insulating layer fourth portion 134 is a portion interposed between the insulating layer second portion 132 and the insulating layer third portion 133 on the surface portion 121 (surface first portion 1211). The insulating layer fourth portion 134 is configured by only a part of the first insulating layer 13A. The fourth thickness t4, which is the thickness of the insulating layer fourth portion 134, is thinner than the second thickness t2 of the insulating layer second portion 132. The fourth thickness t4 of the insulating layer fourth portion 134 is thinner than the third thickness t3 which is the thickness of the insulating layer third portion 133.

  The connecting portion 135 connects the insulating layer third portions 133 adjacent to each other in the y direction. In the illustrated example, the connection portion 135 is a strip extending in the y direction. Further, in the illustrated example, the connecting portion 135 reaches the first base side surface 113 of the base 11. In the illustrated example, the connecting portion 135 is configured by only a part of the first insulating layer 13A.

  As shown in FIG. 33, FIG. 35 and FIG. 37, the insulating layer 13 includes the first insulating layer surface 141, the second insulating layer surface 142, the third insulating layer surface 143, the fourth insulating layer surface 144, and the fifth insulating layer. A surface 145, an insulating layer sixth surface 146, an insulating layer seventh surface 147, an insulating layer eighth surface 148, and an insulating layer ninth surface 149 are provided.

  The insulating layer first surface 141 is a surface of the insulating layer first portion 131 located on one side (upper side in the drawing) in the z direction. In the illustrated example, the insulating layer first surface 141 is a flat surface generally along the xy plane. The insulating layer second surface 142 is a surface of the insulating layer second portion 132 located on one side (upper side in the drawing) in the z direction. In the illustrated example, the insulating layer second surface 142 is a substantially flat surface along the xy plane.

  Insulating layer third surface 143 is a surface of insulating layer third portion 133 and insulating layer fourth portion 134 located on one side in the z direction. In the illustrated example, the insulating layer third surface 143 is a curved surface gently curved so as to be positioned on the other side in the z direction as it is separated from the insulating layer second surface 142 in the z direction. The insulating layer fifth surface 145 is a surface facing the side of the insulating layer third portion 133 that is separated from the insulating layer second portion 132 in the direction perpendicular to the z direction, and is along the z direction. The insulating layer fourth surface 144 is interposed between the insulating layer third surface 143 and the insulating layer fifth surface 145, and is formed of a convex curved surface. The insulating layer sixth surface 146 is interposed between the insulating layer fifth surface 145 and the substrate surface 111 and is in contact with the substrate surface 111. The insulating layer fifth surface 145 is configured by a convex curved surface that is convex obliquely downward. The boundary between the insulating layer fifth surface 145 and the substrate surface 111 is located closer to the substrate third side surface 115 than the insulating layer fifth surface 145 in the z direction.

  The insulating layer seventh surface 147 and the insulating layer eighth surface 148 are surfaces of the insulating layer first portion 131 located on the other side in the z direction (lower side in the drawing). The insulating layer seventh surface 147 is separated from the base material third side surface 115 in the z direction, and is in contact with the boundary between the insulating layer first side surface 171 and the insulating layer second side surface 172. In the illustrated example, the insulating layer first side surface 171 is located on the other side in the z direction than the base surface 111 and is located on the one side in the z direction than the back surface 112 of the base. The insulating layer seventh surface 147 is a flat surface generally along the xy plane. The insulating layer eighth surface 148 is interposed between the insulating layer seventh surface 147 and the base material third side surface 115. In the illustrated example, the insulating layer seventh surface 147 is located on the other side in the z direction with respect to the insulating layer eighth surface 148. The insulating layer eighth surface 148 is a gently curved convex surface. The boundary between the insulating layer eighth surface 148 and the base material third side surface 115 is located on one side in the z direction with respect to the boundary between the insulating layer seventh surface 147 and the insulating layer eighth surface 148.

  As shown in FIG. 37, the insulating layer ninth surface 149 is a surface of the connecting portion 135 located on one side in the z direction (upper side in the drawing). The insulating layer ninth surface 149 is connected to the insulating layer third surface 143. The insulating layer ninth surface 149 is a flat surface along the xy plane as compared to the insulating layer third surface 143.

  As shown in FIGS. 33, 35 and 37, the fifth thickness t5 corresponding to the distance between the base surface 111 and the insulating layer first surface 141 in the z direction is the second thickness of the insulating layer second portion 132. And the third thickness t3 of the third insulating layer portion 133 and the fourth thickness t4 of the fourth insulating layer portion 134.

  The semiconductor light emitting element 2 is a light source of the semiconductor light emitting device A4, and has an element body 21, a first electrode 22 and a second electrode 23 in the present embodiment. The element body 21 has a semiconductor layer made of, for example, an InGan semiconductor or the like. The first electrode 22 is, for example, a cathode electrode, and the second electrode 23 is, for example, an anode electrode.

  In the present embodiment, the semiconductor light emitting element 2 is bonded to the surface second portion 1212 of the surface portion 121 of the conductor layer 12 by the bonding material 25, for example. The bonding material 25 is, for example, Ag paste or solder.

  The first electrode 22 is connected to one surface third portion 1213 by a wire 28. The wire 28 is made of, for example, Au, and has a first bonding portion 281 and a second bonding portion 282. The first bonding portion 281 is a portion of the wire 28 joined to the surface third portion 1213. The second bonding portion 282 is a portion of the wire 28 bonded to the first electrode 22.

  The second electrode 23 is connected to the other surface third portion 1213 by a wire 29. The wire 29 is made of, for example, Au, and has a first bonding portion 291 and a second bonding portion 292. The first bonding portion 291 is a portion of the wire 29 joined to the third surface portion 1213. The second bonding portion 292 is a portion of the wire 29 joined to the second electrode 23.

  The resin portion 3 covers the semiconductor light emitting element 2 and is made of a material that transmits light from the semiconductor light emitting element 2. In the present embodiment, the resin portion 3 is formed on the substrate surface 111 side (one side in the z direction) of the substrate 1 and covers the substrate surface 111, the surface portion 121 of the conductor layer 12 and the insulating layer 13. There is.

  The material of the resin part 3 is not particularly limited, as long as it allows the light from the semiconductor light emitting element 2 to pass through, for example, transparent epoxy resin, silicone resin, etc. are appropriately selected. Further, in the present embodiment, the resin portion 3 contains a fluorescent material. The fluorescent material emits light of a wavelength different from that of the light from the semiconductor light emitting device 2 by being excited by the light from the semiconductor light emitting device 2. For example, when the semiconductor light emitting element 2 emits blue light, the fluorescent material emits yellow light. Thus, the semiconductor light emitting device A4 emits, for example, white light.

  As shown in FIGS. 29 and 32 to 37, in the present embodiment, the resin portion 3 has a resin surface 31, a pair of first resin side surfaces 32, and a pair of second resin side surfaces 33.

  The resin surface 31 is a surface directed to one side in the z direction. In the present embodiment, the resin surface 31 is a flat surface generally along the xy plane. The pair of resin first side surfaces 32 are surfaces which are separated from each other in the x direction, and are perpendicular to the x direction in the present embodiment. In the illustrated example, the resin first side surface 32 is the base material first side surface 113 of the base material 11, the insulating layer first side surface 171 of the first insulating layer 13A, and the insulating layer third side surface 191 of the second insulating layer 13B. It is very close The pair of resin second side surfaces 33 are surfaces which are separated from each other in the y direction, and are perpendicular to the y direction in the present embodiment. In the illustrated example, the resin second side surface 33 is the base material second side surface 114 of the base material 11, the insulating layer second side surface 172 of the first insulating layer 13A, and the insulating layer fourth side surface 192 of the second insulating layer 13B. It is very close

  As shown in FIGS. 32 to 37, the first distance (the thickness of resin portion 3) in the z direction between insulating layer first surface 141 and resin surface 31 at the boundary between resin surface 31 and resin first side surface 32 The distance D1 is substantially the same as a second distance D2 which is a distance in the z direction between the insulating layer second surface 142 and the resin surface 31 (the thickness of the resin portion 3). A third distance D3 which is a distance between the insulating layer third surface 143 and the resin surface 31 in the z direction (the thickness of the resin portion 3) is larger than the first distance D1 and the second distance D2. A fourth distance D4 which is a distance between the substrate surface 111 and the resin surface 31 in the z direction (the thickness of the resin portion 3) is larger than the first distance D1, the second distance D2 and the third distance D3.

  Next, an example of a method of manufacturing the semiconductor light emitting device A4 will be described below with reference to FIGS. 39 to 44.

  First, a substrate material 110 shown in FIGS. 39 and 40 is prepared. The substrate material 110 is to be the plurality of substrates 11 and is substantially equivalent to one in which the plurality of substrates 11 are arranged in a matrix in the x direction and y direction. A plurality of through holes 1150 are formed in the substrate material 110. The through hole 1150 is a portion that becomes the base material third side surface 115 by cutting the substrate material 110.

  In the substrate material 110, the conductor layer 120 and the first insulating layer 130A are formed. The conductor layer 120 has a portion to be a portion of the conductor layer 12 described above. The first insulating layer 130A has a portion to be each portion of the above-described first insulating layer 13A. Conductor layer 120 is formed, for example, by plating. The first insulating layer 130A is formed, for example, by pressure-bonding a sheet-like (film-like) solder resist to the substrate material 110.

  As shown in FIG. 40, the first insulating layer 130A blocks the through hole 1150. As a result of the above-described pressure bonding, the first insulating layer 130A has a portion on the surface first portion 1211 thinner than the portion closing the through hole 1150. The portion of the first insulating layer 130A that blocks the through hole 1150 has a substantially constant thickness, and has a flat plate shape along the xy plane.

  Next, as shown in FIGS. 41 and 42, the second insulating layer 130B is formed. The second insulating layer 130B is formed, for example, by applying a resin material of a solder resist on the first insulating layer 130A and curing it. In the present embodiment, the second insulating layer 130B is formed to have a plurality of circular elements contained in the through holes 1150 in the z direction. Thus, portions to be the insulating layer first portion 131, the insulating layer second portion 132, the insulating layer third portion 133, and the insulating layer fourth portion 134 are formed.

  Next, a plurality of semiconductor light emitting elements 2 are bonded. This bonding is performed by bonding the element main body 21 of the semiconductor light emitting element 2 to the surface second portion 1212 of the conductor layer 120 with the bonding material 25. In addition, the first electrode 22 and the second electrode 23 of the element main body 21 and the pair of surface third portions 1213 are connected by the wire 28 and the wire 29.

  Next, the mold 71 is set. The mold 71 is for forming a cavity for resin molding with the substrate surface 111 of the substrate material 110.

  Next, as shown in FIG. 43, the cavity of the mold 71 is filled with a resin material. At this time, in the insulating layer first portion 131 closing the base material third side surface 115, the first thickness t1 is thicker than the second thickness t2, and the rigidity is enhanced. Therefore, even if the filling pressure of the resin material acts, the insulating layer first portion 131 maintains a flat shape. Then, the resin material 30 is formed by curing the resin material.

  When filling of the resin material is completed, as shown in FIG. 44, the mold 71 is removed. After this, for example, the substrate material 110, the conductor layer 120, the first insulating layer 130A, and the second insulating layer 130B are taken along the cutting line Cy along the y direction and the cutting line along the x direction (not shown). And cutting the resin material 30. Thereby, a plurality of semiconductor light emitting devices A4 are obtained.

  Next, the operation of the semiconductor light emitting device A4 will be described.

  According to this embodiment, as shown in FIGS. 32 to 37, the first thickness t1 of the insulating layer first portion 131 is thicker than the second thickness t2 of the insulating layer second portion 132. For this reason, the rigidity of the insulating layer first portion 131 is enhanced. Thereby, for example, in the manufacture of the semiconductor light emitting device A4, when the resin material shown in FIG. 43 is filled, the insulating layer first portion 131 is bent to the other side in the z direction, or the insulating layer first portion 131 is broken. It is possible to suppress that it does. Therefore, according to the semiconductor light emitting device A4, the variation in the shape of the resin portion 3 can be suppressed. As a result, in the semiconductor light emitting device A4, the configuration having the resin surface 31 which is a flat surface of the resin portion 3 of the present embodiment is realized.

  The insulating layer 13 of the present embodiment includes the first insulating layer 13A and the second insulating layer 13B. By forming the first insulating layer portion 131 by laminating the second insulating layer 13B on the first insulating layer 13A, the rigidity of the first insulating layer portion 131 can be easily and surely enhanced. This is preferable to suppress the variation in the shape of the resin portion 3.

  Since the thickness of the first insulating layer 13A is thicker than that of the second insulating layer 13B, it is possible to prevent the first insulating layer 13A from being erroneously damaged or the like when the second insulating layer 13B is manufactured.

  Also, the insulating layer second portion 132 includes the first insulating layer 13A and the second insulating layer 13B. Thereby, it can suppress that the rigidity of the insulating layer second part 132 becomes extremely low with respect to the insulating layer first part 131. This is preferable for preventing the insulating layer first portion 131 from falling off on the other side in the z direction by breakage of the insulating layer second portion 132.

  The edge 199 of the second insulating layer 13B is located between the base material third side surface 115 and the edge 1219 of the surface first portion 1211 in the z direction, and from the surface first portion 1211 in the z direction It has a configuration that does not extend. Thereby, for example, it is possible to prevent the capillary for forming the first bonding portion 281 of the wire 28 and the first bonding portion 291 of the wire 29 from interfering with the second insulating layer 13B. This is preferable for the miniaturization of the semiconductor light emitting device A4.

  The insulating layer 13 has an insulating layer third portion 133. The insulating layer third portion 133 is directly bonded to the substrate surface 111 of the substrate 11. Generally, the insulating layer 13 made of resin or the like has higher bonding strength to the base 11 made of an insulating material such as resin than the conductive layer 12 made of metal. For this reason, peeling of the insulating layer 13 from the base 11 can be suppressed by the insulating layer third portion 133.

  The insulating layer sixth surface 146 is a curved surface having a shape that wraps inward toward the substrate surface 111 of the substrate 11. For this reason, a part of the resin part 3 gets into between the insulating layer sixth surface 146 and the substrate surface 111. Thereby, the behavior in which the resin portion 3 is separated from the base surface 111 of the base 11 can be suppressed. In particular, since the insulating layer third portion 133 is a portion having a high bonding strength to the base material 11, the insulating layer third portion 133 is suitable for suppressing separation of the resin portion 3.

  The insulating layer eighth surface 148 is a curved surface located on one side in the z direction toward the base material third side surface 115. Thereby, a larger region of the substrate third side surface 115 can be exposed from the insulating layer 13. Thus, when the semiconductor light emitting device A4 is mounted on a circuit board or the like, it is possible to add solder to the first back surface portion 1221 and attach it to a larger area of the substrate third side surface 115, thereby enhancing mounting strength. be able to.

  The pair of resin first side surfaces 32 and the pair of resin second side surfaces 33 of the resin portion 3 are flush with the pair of base material first side surfaces 113 of the base 11 and the pair of base material second side surfaces 114. That is, the resin part 3 is a structure which overlaps with all the base materials 11 in z direction view. Thus, the volume of the resin portion 3 can be increased, and the semiconductor light emitting element 2 having a larger size than the size of the base 11 can be provided. In the present embodiment, the wire 28 and the wire 29 are connected to the semiconductor light emitting element 2. The semiconductor light emitting device A4 can be miniaturized while the wires 28 and 29 extending to the opposite sides in the x direction are appropriately covered by the resin portion 3.

  As shown in FIG. 33, the fifth thickness t5 is substantially the same as the sum of the second thickness t2 and the thickness of the first surface portion 1211. The first thickness t1 is thicker than the fifth thickness t5. The insulating layer first portion 131 having such a first thickness t1 is sufficiently enhanced in rigidity, which is advantageous for suppressing the variation in the shape of the resin portion 3.

  The thickness of the surface first portion 1211 is thinner than the second thickness t 2 of the insulating layer second portion 132. Thereby, the z-direction dimension of the semiconductor light emitting device A4 can be reduced. In addition, when the second thickness t2 of the insulating layer second portion 132 is too thin, there is a possibility that the surface first portion 1211 is unintentionally exposed. According to the present embodiment, such a situation can be avoided.

  45-47 illustrate another embodiment of the present disclosure. In these figures, elements that are the same as or similar to the above embodiment are given the same reference numerals as the above embodiment.

Fifth Embodiment
FIG. 45 shows a semiconductor light emitting device according to a fifth embodiment of the present disclosure. The semiconductor light emitting device A5 of the present embodiment is different from the above-described embodiment in the configuration of the insulating layer 13.

  In the present embodiment, the insulating layer 13 does not have a plurality of layers which are clearly distinguished, and is entirely constituted by a single layer. However, the insulating layer 13 has the insulating layer first portion 131 and the insulating layer second portion 132, and the first thickness t1 is thicker than the second thickness t2, as in the above-described embodiment. In the illustrated example, the shape of each part of the insulating layer 13 is the same as that of the above-described embodiment, but the configuration of the detail may be different from that of the above-described embodiment.

  Such an insulating layer 13 can be formed, for example, by bonding a sheet-like (film-like) solder resist, in which a plurality of regions having different thicknesses are previously formed, to the substrate 11. Alternatively, a resin material is applied to the insulating layer formed to cover the through holes 1150 and integrated with the insulating layer to form a single layer that does not have a plurality of layers clearly distinguished after completion. And may be configured to be recognized as consisting of

  Also in the present embodiment, the effects of the above-described embodiment can be obtained, including suppressing the variation in the shape of the resin portion 3. Further, as understood from the present embodiment, the method of forming the insulating layer 13 is not particularly limited.

Sixth Embodiment
46 and 47 illustrate a semiconductor light emitting device according to a sixth embodiment of the present disclosure. The semiconductor light emitting device A6 of the present embodiment is mainly different from the above-described embodiment in the number, the position, and the shape of the third substrate side surface 115. In FIG. 46, the resin portion 3 is omitted for the sake of understanding.

  In the present embodiment, the number of base material third side surfaces 115 is two. That is, the pair of base material third side surfaces 115 are provided separately from each other in the x direction. The substrate third side surface 115 is formed substantially at the center of the substrate 11 in the y direction. The shape of the base material third side surface 115 in the z direction is substantially semicircular.

  The insulating layer first portion 131 and the insulating layer second portion 132 of the insulating layer 13 are located approximately at the center of the substrate 11 in the y direction, corresponding to the position and the shape of the substrate third side surface 115. The z-direction shape of the insulating layer first portion 131 is substantially semicircular, and the z-direction shape of the insulating layer second portion 132 is substantially semi-annular.

  In the semiconductor light emitting element 2, the first electrode 22 and the second electrode 23 are provided separately on the upper and lower surfaces of the element body 21 in the z direction. The first electrode 22 is bonded to the surface portion 121 by a conductive bonding material 25. The wire 29 is connected to the second electrode 23.

  In the present embodiment, the first thickness t1, the second thickness t2, the third thickness t3, the fourth thickness t4, the fifth thickness t5, the first distance D1, the second distance D2, the third distance D3, and the third The magnitude relation of the four distances D4 is similar to that of the semiconductor light emitting devices A4 and A5.

  Also in the present embodiment, the effects of the above-described embodiment can be obtained, including suppressing the variation in the shape of the resin portion 3. In addition, as understood from the present embodiment, the position and the number of the third substrate side surfaces 115 in the substrate 11 are not particularly limited.

  The semiconductor light emitting device according to the present disclosure is not limited to the embodiment described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be varied in design in many ways.

[Supplementary Note B1]
An insulating base material having a base surface facing the one side in the thickness direction and a back face of the base facing the other side in the thickness direction, a conductor layer formed on the base, and an insulation covering a part of the conductor layer A substrate having a layer,
A semiconductor light emitting device mounted on the substrate surface side of the substrate;
And a resin part which covers the semiconductor light emitting element and transmits light from the semiconductor light emitting element.
The substrate of the substrate connects the substrate surface and the substrate back surface, and a pair of substrate first side faces spaced apart in a first direction, and the substrate surface and the substrate back surface respectively And a third substrate side surface recessed toward the semiconductor light emitting element side relative to the first substrate side surface in the thickness direction as viewed in the thickness direction.
The conductor layer has a surface portion formed on the surface of the base material and a side surface portion formed on the third side surface of the base material,
The surface portion has a surface first portion adjacent to the semiconductor light emitting element side with respect to the base material third side surface and connected to the side surface portion,
The insulating layer is a first insulating layer portion located on the opposite side to the semiconductor light emitting element with respect to the third substrate side in the thickness direction, and the surface of the conductor layer in the thickness direction And an insulating layer second portion overlapping the first portion;
The resin portion covers the insulating layer first portion and the insulating layer second portion of the insulating layer,
The semiconductor light emitting device, wherein a first thickness which is a thickness of the insulating layer first part is thicker than a second thickness which is a thickness of the insulating layer second part.
[Supplementary Note B2]
The insulating layer includes a first insulating layer, and a second insulating layer stacked on one side in the thickness direction with respect to the first insulating layer.
The semiconductor light-emitting device according to appendix B1, wherein the insulating layer first portion includes the first insulating layer and the second insulating layer.
[Supplementary Note B3]
The semiconductor light-emitting device according to appendix B2, wherein a thickness of the first insulating layer is thicker than a thickness of the second insulating layer.
[Supplementary Note B4]
The semiconductor light-emitting device according to Supplementary Note B2 or B3, wherein the insulating layer second portion includes the first insulating layer and the second insulating layer.
[Supplementary Note B5]
The semiconductor light-emitting device according to attachment B3, wherein an edge of the second insulating layer is located between the substrate third side surface and an edge of the first surface portion in the thickness direction.
[Supplementary Note B6]
The semiconductor light-emitting device according to any one of appendices B2 to B4, wherein the insulating layer has a third portion of an insulating layer adjacent to the first surface portion and in contact with the surface of the base material.
[Supplementary Note B7]
The first distance, which is the distance between the insulating layer first portion and the surface of the resin portion, is smaller than the third distance, which is the distance between the insulating layer third portion and the surface of the resin portion. Semiconductor light emitting devices.
[Supplementary Note B8]
The semiconductor light-emitting device according to appendix B7, wherein a second distance which is a distance between the insulating layer second portion and the surface of the resin portion is smaller than the third distance.
[Supplementary Note B9]
The insulating layer is interposed between the insulating layer second portion and the insulating layer third portion on the surface first portion, and has an insulating layer fourth portion formed of the second insulating layer. The semiconductor light-emitting device according to any one of B8 to B8.
[Supplementary Note B10]
The semiconductor light-emitting device according to appendix B9, wherein a fourth thickness which is a thickness of the fourth part of the insulating layer is thinner than a third thickness which is a thickness of the third part of the insulating layer.
[Supplementary Note B11]
The semiconductor light-emitting device according to appendix B10, wherein the second thickness is thicker than the thickness of the surface first portion of the surface portion of the conductor layer.
[Supplementary Note B12]
The semiconductor light-emitting device according to appendix B11, wherein the fourth thickness is thicker than the thickness of the surface first portion of the surface portion of the conductor layer.
[Supplementary Note B13]
The base material of the substrate is a pair of base material second side surfaces which respectively connect the base material surface and the base material back surface and are separated in a first direction and a second direction perpendicular to the thickness direction. Having four said substrate third side,
The semiconductor light-emitting device according to any one of appendices B2 to B12, wherein the base material third side surface is interposed between the base material first side surface and the base material second side surface.
[Supplementary Note B14]
The resin portion has a pair of resin first side surfaces that are flush with the pair of base material first side surfaces, and a pair of resin second side surfaces that are flush with the pair of base material second side surfaces. The semiconductor light-emitting device according to appendix B13.
[Supplementary Note B15]
The first insulating layer according to appendix B14, having an insulating layer first side surface flush with the base material first side surface, and an insulating layer second side surface flush with the base material second side surface. Semiconductor light emitting devices.
[Supplementary Note B16]
The second insulating layer is an insulating layer that is flush with the base material first side surface and the insulating layer first side surface, and an insulating layer that is flush with the base material second side surface and the insulating layer second side surface The semiconductor light-emitting device according to appendix B15, having a fourth side.
[Supplementary Note B17]
The fifth thickness corresponding to the distance between the substrate surface and the first surface of the insulating layer located on one side in the thickness direction of the first portion of the insulating layer is thicker than the second thickness. The semiconductor light-emitting device according to any one of the above.

A1, A11, A12, A13, A2, A3, A4, A5, A6: semiconductor light emitting device 1: substrate 2: semiconductor light emitting element 3: resin portion 8: container 11: substrate 12: conductor layer 13: insulating layer 13A First insulating layer 13B: second insulating layer 21: element body 22: first electrode 23: second electrode 25: bonding material 28: wire 29: wire 30: resin material 31: resin surface 32: resin first side surface 33 : Resin second side 71: mold 81: case 82: sheet 110: substrate material 111: substrate surface 112: substrate back surface 113: substrate first side 114: substrate second side 115: substrate third side 120: conductor layer 121: surface portion 122: back surface portion 123: side surface portion 124: conductor layer first surface 130: insulating layer 130A: first insulating layer 130B: second insulating layer 131: insulating layer first portion 132: insulating layer Second Part 133: Insulating layer third part 134: Insulating layer fourth part 135: Coupling part 137: Back insulating layer 141: Insulating layer first surface 142: Insulating layer second surface 143: Insulating layer third surface 144: Insulating layer third Fourth surface 145: Insulating layer fifth surface 146: Insulating layer sixth surface 147: Insulating layer seventh surface 148: Insulating layer eighth surface 149: Insulating layer ninth surface 161: Insulating layer first region 162: Insulating layer second Region 163: Insulating layer third region 164: Insulating layer fourth region 167: Insulating layer seventh region 168: Insulating layer eighth region 171: Insulating layer first side 172: Insulating layer second side 191: Insulating layer third side 192: insulating layer fourth side face 199: edge 281: first bonding portion 282: second bonding portion 291: first bonding portion 292: second bonding portion 361: resin first region 362: resin second Region 363: resin third region 364: resin fourth region 365: resin fifth region 367: resin seventh region 368: resin eighth region 811: concave portion 1150: through hole 1151: substrate third side surface 1211: surface first Part 1212: Surface second part 1213: Surface third part 1214: Connection part 1215: Connection part 1219: Edge 1221: Back surface first part 1222: Back surface second part Cx: Cutting line Cy: Cutting line D0: Distance D1: First distance D2: second distance D3: third distance D4: fourth distance D7: seventh distance D8: eighth distance L: light

Claims (17)

An insulating base material having a base surface facing the one side in the thickness direction and a back face of the base facing the other side in the thickness direction, a conductor layer formed on the base, and an insulation covering a part of the conductor layer A substrate having a layer,
A semiconductor light emitting device mounted on the substrate surface side of the substrate;
And a resin part which covers the semiconductor light emitting element and transmits light from the semiconductor light emitting element.
The substrate of the substrate connects the substrate surface and the substrate back surface, and a pair of substrate first side faces spaced apart in a first direction, and the substrate surface and the substrate back surface respectively And a third substrate side surface recessed toward the semiconductor light emitting element side relative to the first substrate side surface in the thickness direction as viewed in the thickness direction.
The conductor layer has a surface portion formed on the surface of the base material and a side surface portion formed on the third side surface of the base material,
The surface portion has a surface first portion adjacent to the semiconductor light emitting element side with respect to the base material third side surface and connected to the side surface portion,
The insulating layer is a first insulating layer portion located on the opposite side to the semiconductor light emitting element with respect to the third substrate side in the thickness direction, and the surface of the conductor layer in the thickness direction And an insulating layer second portion overlapping the first portion;
The resin portion covers the insulating layer first portion and the insulating layer second portion of the insulating layer,
The semiconductor light emitting device, wherein a first thickness which is a thickness of the insulating layer first part is thicker than a second thickness which is a thickness of the insulating layer second part. The insulating layer includes a first insulating layer, and a second insulating layer stacked on one side in the thickness direction with respect to the first insulating layer.
The semiconductor light emitting device according to claim 1, wherein the first insulating layer portion includes the first insulating layer and the second insulating layer.   The semiconductor light emitting device according to claim 2, wherein a thickness of the first insulating layer is thicker than a thickness of the second insulating layer.   The semiconductor light emitting device according to claim 2, wherein the insulating layer second portion includes the first insulating layer and the second insulating layer.   The semiconductor light emitting device according to claim 3, wherein an edge of the second insulating layer is located between the third substrate side and an edge of the first surface portion in the thickness direction.   The semiconductor light emitting device according to any one of claims 2 to 4, wherein the insulating layer has an insulating layer third portion adjacent to the first surface portion and in contact with the surface of the base material.   The first distance which is the distance between the insulating layer first portion and the surface of the resin portion is smaller than the third distance which is the distance between the insulating layer third portion and the surface of the resin portion. The semiconductor light-emitting device as described.   The semiconductor light-emitting device according to claim 7, wherein a second distance which is a distance between the insulating layer second portion and the surface of the resin portion is smaller than the third distance.   The insulating layer has an insulating layer fourth portion interposed between the insulating layer second portion and the insulating layer third portion on the first surface portion and formed of the second insulating layer. 6. The semiconductor light emitting device according to any one of 6 to 8.   The semiconductor light-emitting device according to claim 9, wherein a fourth thickness which is a thickness of the insulating layer fourth part is thinner than a third thickness which is a thickness of the insulating layer third part.   The semiconductor light emitting device according to claim 10, wherein the second thickness is thicker than a thickness of the surface first portion of the surface portion of the conductor layer.   The semiconductor light emitting device according to claim 11, wherein the fourth thickness is thicker than a thickness of the surface first portion of the surface portion of the conductor layer. The base material of the substrate is a pair of base material second side surfaces which respectively connect the base material surface and the base material back surface and are separated in a first direction and a second direction perpendicular to the thickness direction. Having four said substrate third side,
The semiconductor light emitting device according to any one of claims 2 to 12, wherein the substrate third side surface is interposed between the substrate first side surface and the substrate second side surface.   The resin portion has a pair of resin first side surfaces that are flush with the pair of base material first side surfaces, and a pair of resin second side surfaces that are flush with the pair of base material second side surfaces. The semiconductor light-emitting device according to claim 13.   The insulating layer first side surface that is flush with the base material first side surface, and the insulating layer second side surface that is flush with the base material second side surface, according to claim 14, wherein the first insulating layer comprises The semiconductor light-emitting device as described.   The second insulating layer is an insulating layer that is flush with the base material first side surface and the insulating layer first side surface, and an insulating layer that is flush with the base material second side surface and the insulating layer second side surface The semiconductor light-emitting device according to claim 15, further comprising: a fourth side surface.   A fifth thickness corresponding to a distance between the substrate surface and the first surface of the insulating layer located on one side in the thickness direction of the first portion of the insulating layer is thicker than the second thickness. 20. The semiconductor light emitting device according to any one of 16.

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