JP7296201B2 - semiconductor light emitting device - Google Patents

Description

The present disclosure relates to semiconductor light emitting devices.

Patent Document 1 discloses an example of a conventional semiconductor light emitting device. The semiconductor light emitting device disclosed in the document includes a substrate, a semiconductor light emitting element and a resin portion. The resin portion transmits light from the semiconductor light emitting element.

JP 2017-126743 A

The state of light emission from the semiconductor light emitting device is affected by the shape of the resin portion and the like. The color of the light emitted from the semiconductor light emitting device varies depending on the shape of the resin portion. Moreover, it is not preferable that the shape of the resin portion varies.

An object of the present disclosure is to provide a semiconductor light-emitting device capable of suppressing variations in color tone. Another object of the present disclosure is to provide a semiconductor light emitting device capable of suppressing variation in the shape of the resin portion.

A semiconductor light-emitting device provided by the present disclosure includes an insulating substrate having a substrate surface facing one thickness direction side and a substrate back surface facing the thickness direction other side, and a conductor layer formed on the substrate. , and a substrate having an insulating layer covering a part of the conductor layer, a semiconductor light emitting element mounted on the substrate surface side of the substrate, and covering the semiconductor light emitting element and transmitting light from the semiconductor light emitting element. wherein the base material of the substrate includes a pair of base material first side surfaces each connecting the base surface and the base back surface and spaced apart in a first direction. and a pair of base material third side surfaces, each of which connects the base material surface and the base material back surface and is recessed toward the semiconductor light emitting element side from the base material first side surface when viewed in the thickness direction. , the conductor layer has a surface portion formed on the substrate surface and a side portion formed on the substrate third side surface, the surface portion facing the substrate third side surface to the semiconductor light emitting layer; It has a first surface portion adjacent to the element side and connected to the side surface portion, and the insulating layer is located on the side opposite to the semiconductor light emitting element with respect to the third side surface of the substrate when viewed in the thickness direction. An insulating layer first portion and an insulating layer second portion overlapping the first surface portion of the conductor layer when viewed in the thickness direction, and the resin portion includes the insulating layer first portion and the insulating layer second portion of the insulating layer. The insulating layer first region covering the insulating layer second portion and included in the insulating layer first surface in contact with the resin portion of the insulating layer first portion, and the thickness of the resin surface of the resin portion The first distance, which is the distance between the resin first region overlapping the insulation layer first region when viewed from the direction, is the insulation layer second surface included in the insulation layer second surface that is in contact with the resin portion of the insulation layer second portion. 2 region and a resin second region of the resin surface of the resin portion that overlaps the insulating layer second region when viewed in the thickness direction.

According to the semiconductor light emitting device of the present disclosure, variations in color tone can be suppressed.

Other features and advantages of the present disclosure will become more apparent from the detailed description below with reference to the accompanying drawings.

1 is a plan view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a plan view of a main part showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a bottom view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 2 is a cross-sectional view taken along line IV-IV of FIG. 1; FIG. 1 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a front view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is an enlarged front view of a main part showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a side view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is an enlarged side view of a main part showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 1 is a plan view of a main part showing a substrate of a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. FIG. 3 is a plan view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 12 is a cross-sectional view of a main part taken along line XII-XII in FIG. 11; FIG. 3 is a plan view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 14 is a cross-sectional view of a main part taken along line XIV-XIV in FIG. 13; FIG. 4A is a cross-sectional view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 3 is a plan view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 17 is a cross-sectional view of main parts along line XVII-XVII in FIG. 16; FIG. 3 is a plan view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 19 is a cross-sectional view of the essential parts along line XIX-XIX in FIG. 18; 1 is a cross-sectional view of a main part showing a usage example of a semiconductor light emitting device according to a first embodiment of the disclosure; FIG. FIG. 4 is an enlarged cross-sectional view of main parts showing a first modification of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 11 is an enlarged cross-sectional view of a main part showing a second modification of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 11 is an enlarged cross-sectional view of a main part showing a third modification of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 11 is a plan view of a main part showing a fourth modification of the semiconductor light emitting device according to the first embodiment of the present disclosure; FIG. 10 is a plan view of a main part showing a semiconductor light emitting device according to a second embodiment of the present disclosure; FIG. 26 is a cross-sectional view along line XXVI-XXVI of FIG. 25; FIG. 11 is a plan view of a main part showing a semiconductor light emitting device according to a third embodiment of the present disclosure; FIG. 28 is a cross-sectional view along line XXVIII-XXVIII of FIG. 27; FIG. 11 is a plan view showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a plan view of a main part showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; It is a bottom view showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure. FIG. 30 is a cross-sectional view along line XXXII-XXXII of FIG. 29; FIG. 11 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a front view showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is an enlarged front view of a main part showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a side view showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is an enlarged side view of a main part showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a plan view of a main part showing a substrate of a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 21 is a plan view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 40 is a cross-sectional view along line XL-XL in FIG. 39; FIG. 21 is a plan view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 42 is a cross-sectional view along line XLII-XLII in FIG. 41; FIG. 11 is a cross-sectional view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a cross-sectional view of a main part showing an example of a method for manufacturing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting device according to a fifth embodiment of the present disclosure; FIG. 11 is a plan view of a main part showing a semiconductor light emitting device according to a sixth embodiment of the present disclosure; FIG. 47 is a cross-sectional view along line XLVII-XLVII in FIG. 46;

Preferred embodiments of the present disclosure will be specifically described below with reference to the drawings.

The terms "first", "second", "third", etc. in this disclosure are used merely as labels and are not intended to necessarily impose a permutation of their objects. .

<First Embodiment>
1 to 10 show a semiconductor light emitting device according to a first embodiment of the present disclosure. A semiconductor light emitting device A1 of this embodiment includes a substrate 1, a semiconductor light emitting element 2, and a resin portion 3. As shown in FIG. In these figures, the x-direction corresponds to the first direction, the y-direction corresponds to the second direction, and the z-direction corresponds to the thickness direction. The x-, y- and z-directions are perpendicular to each other. The shape and size of the semiconductor light emitting device A1 are not particularly limited. is about 0.15 to 0.3 mm, and has a rectangular shape when viewed in the z direction.

FIG. 1 is a plan view showing a semiconductor light emitting device A1. FIG. 2 is a fragmentary plan view showing the semiconductor light emitting device A1. FIG. 3 is a bottom view showing the semiconductor light emitting device A1. FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. FIG. 5 is an enlarged cross-sectional view of a main part showing the semiconductor light emitting device A1. FIG. 6 is a front view showing the semiconductor light emitting device A1. FIG. 7 is an enlarged front view of a main part showing the semiconductor light emitting device A1. FIG. 8 is a side view showing the semiconductor light emitting device A1. FIG. 9 is an enlarged side view of a main part showing the semiconductor light emitting device A1. FIG. 10 is a fragmentary plan view showing the substrate 1 of the semiconductor light emitting device A1. As can be understood from line IV-IV in FIG. 1, the horizontal direction in FIG. 4 generally follows the x-direction, but includes portions that do not exactly match the x-direction. This also applies to FIG.

The substrate 1 supports the semiconductor light emitting device 2 and also forms a conducting path to the semiconductor light emitting device 2 . The substrate 1 has a base material 11 , a conductor layer 12 and an insulating layer 13 .

Base material 11 is a base of substrate 1 and is made of an insulating material such as glass epoxy resin. The substrate 11 has a substrate front surface 111 , a substrate back surface 112 , a pair of substrate first side surfaces 113 , a pair of substrate second side surfaces 114 and a plurality of substrate third side surfaces 115 .

The substrate surface 111 is a surface facing one side in the z direction. The substrate back surface 112 is a surface facing the other side opposite to the substrate front surface 111 in the z direction. In the illustrated example, substrate surface 111 is a flat surface.

The pair of substrate first side surfaces 113 are spaced apart from each other in the x direction and perpendicular to the x direction. The substrate first side surface 113 connects the substrate front surface 111 and the substrate rear surface 112 . In the illustrated example, substrate backside 112 is a flat surface.

The pair of substrate second side surfaces 114 are spaced apart from each other in the y direction and perpendicular to the y direction. The substrate second side surface 114 connects the substrate front surface 111 and the substrate rear surface 112 .

The substrate third side surface 115 connects the substrate front surface 111 and the substrate rear surface 112, and is a surface recessed inwardly from the substrate first side surface 113 when viewed in the z direction. In this embodiment, the substrate third side surface 115 is recessed inward in the x direction with respect to the substrate first side surface 113 . Further, in the present embodiment, the substrate third side surface 115 is interposed between the substrate first side surface 113 and the substrate second side surface 114 adjacent to each other. Further, the base material third side surface 115 is a surface that is recessed more inward than the base material second side surface 114 when viewed in the z direction. concave. In this embodiment, the number of the plurality of base material third side surfaces 115 is four. The four substrate third sides 115 include a pair of substrate third sides 115 . The base material third side surface 115 has a substantially quarter-circular shape when viewed in the z direction.

The conductor layer 12 constitutes a conducting path to the semiconductor light emitting device 2 and is formed on the base material 11 . The conductor layer 12 has, for example, a Cu layer or the like formed by plating. Moreover, an Au layer formed by plating, for example, may be provided on a portion of the conductor layer 12 exposed from the insulating layer 13 . The conductor layer 12 has a surface portion 121 , a back surface portion 122 and four side surface portions 123 .

The surface portion 121 is a portion formed on the substrate surface 111 of the substrate 11 . In this embodiment, the surface portion 121 has four first surface portions 1211 , second surface portions 1212 , a pair of third surface portions 1213 , and a plurality of connecting portions 1214 and 1215 . The two-dot chain lines (imaginary lines) in FIG. 10 indicate the boundaries of the four surface first portions 1211, the surface second portions 1212, the pair of surface third portions 1213, the plurality of connecting portions 1214, and the connecting portions 1215 for convenience. ing.

The surface first portion 1211 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quarter-circle shape when viewed in the z direction. Moreover, the first surface portion 1211 reaches both the substrate first side surface 113 and the substrate second side surface 114 . In this embodiment, four front surface first portions 1211 are formed corresponding to the four base material third side surfaces 115 .

The second surface portion 1212 is provided substantially in the center of the substrate surface 111 and is a portion for mounting the semiconductor light emitting device 2 thereon. When the semiconductor light emitting device 2 is directly mounted on the substrate 11 , the surface portion 121 may be configured without the second surface portion 1212 . In the illustrated example, the surface second portion 1212 has a substantially rectangular shape when viewed in the z direction.

A pair of the third surface portions 1213 are spaced apart in the x direction with the second surface portion 1212 interposed therebetween. The third surface portion 1213 is a portion used to electrically connect the surface portion 121 and the semiconductor light emitting element 2 . In the illustrated example, the surface third portion 1213 is generally rectangular. Also, in the illustrated example, the surface third portion 1213 is spaced from the substrate first side surface 113 of the substrate 11 .

A plurality of connecting portions 1214 are portions that connect the first surface portion 1211 and the third surface portion 1213 that are adjacent to each other. In the illustrated example, the number of connecting portions 1214 is four, each of which has a strip shape extending in the y direction. Also, in the illustrated example, the connecting portion 1214 is spaced apart from the substrate first side surface 113 of the substrate 11 .

The connecting portion 1215 connects the second surface portion 1212 and the connecting portion 1214 . In the illustrated example, the connecting portion 1215 extends long in the x-direction. In the illustrated example, the connecting portion 1215 is spaced from the substrate second side surface 114 of the substrate 11 .

The rear surface portion 122 is a portion formed on the substrate rear surface 112 of the substrate 11 . In this embodiment, the back surface portion 122 has four first back surface portions 1221 and a pair of second back surface portions 1222 . 3 indicate boundaries between the four back surface first portions 1221 and the pair of back surface second portions 1222 for convenience.

The back surface first portion 1221 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quarter-circle shape when viewed in the z direction. In addition, the back surface first portion 1221 reaches both the substrate first side surface 113 and the substrate second side surface 114 . In this embodiment, four rear surface first portions 1221 are formed corresponding to the four substrate third side surfaces 115 .

The pair of back surface second portions 1222 are provided apart from each other in the x direction. The second rear surface portion 1222 is connected to the first rear surface portion 1221 adjacent in the y direction. The pair of second back surface portions 1222 are used as electrodes when, for example, the semiconductor light emitting device A1 is mounted on a circuit board (not shown) or the like.

The four side portions 123 are formed on the four substrate third side surfaces 115 and respectively cover the four substrate third side surfaces 115 . In this embodiment, the side portion 123 covers substantially the entire third side surface 115 of the substrate. Moreover, the side surface portion 123 is connected to the front surface first portion 1211 of the front surface portion 121 and the rear surface first portion 1221 of the rear surface portion 122 .

The insulating layer 13 is a layer made of an insulating material, covers a portion of the conductor layer 12, and exposes the remaining portion. The material or the like of the insulating layer 13 is not particularly limited, and in this embodiment, it is, for example, a solder resist. In the illustrated example, the insulating layer 13 is formed by pressing a sheet-like (film-like) solder resist onto the substrate 11 . The insulating layer 13 has four first insulating layer portions 131 , four second insulating layer portions 132 , a plurality of third insulating layer portions 133 and a pair of connecting portions 135 . 2, FIG. 5, FIG. 7 and FIG. 9 indicate four insulating layer first parts 131, four insulating layer second parts 132, a plurality of insulating layer third parts 133 and Boundaries of the pair of connecting portions 135 are shown for convenience.

In addition, in the present embodiment, a back surface insulating layer 137 is provided on the substrate back surface 112 of the substrate 11 . The back surface insulating layer 137 is provided between the pair of back surface second portions 1222, and is provided for viewing the polarity of the semiconductor light emitting device A1, for example. The back insulating layer 137 may be formed by a method similar to that of the insulating layer 13, or may be formed by a different method.

The four insulating layer first portions 131 are provided corresponding to the four base material third side surfaces 115 . The insulating layer first portion 131 is positioned outward from the substrate third side surface 115 when viewed in the z direction. In the illustrated example, the insulating layer first portion 131 has a quarter-circular shape when viewed in the z-direction.

The four insulating layer second portions 132 are provided corresponding to the four base material third side surfaces 115 . The insulating layer second part 132 is formed on the surface first part 1211 of the surface part 121 of the conductor layer 12, is a part overlapping the surface first part 1211 when viewed in the z direction, and covers the surface first part 1211. there is In the illustrated example, the insulating layer second portion 132 has a quarter ring shape when viewed in the z direction. Also, in the illustrated example, the thickness of the second insulating layer portion 132 is thinner than the thickness of the first insulating layer portion 131 . In addition, the thickness of the insulating layer second portion 132 is thicker than the thickness of the surface first portion 1211 of the conductor layer 12 .

The third insulating layer portion 133 is adjacent to the second insulating layer portion 132 and is in contact with the substrate surface 111 of the substrate 11 . In other words, the conductor layer 12 is not interposed between the insulating layer third portion 133 and the substrate surface 111 of the substrate 11 .

The connecting portion 135 connects the insulating layer third portions 133 adjacent to each other in the y direction. In the illustrated example, the connecting portion 135 is strip-shaped extending in the y direction. Also, in the illustrated example, the connecting portion 135 reaches the substrate first side surface 113 of the substrate 11 .

The insulating layer 13 has a pair of insulating layer first side surfaces 171 and two pairs of insulating layer second side surfaces 172 . The pair of insulating layer first side surfaces 171 are spaced apart from each other in the x-direction and perpendicular to the x-direction. The pair of insulating layer first side surfaces 171 are flush with the pair of substrate first side surfaces 113 of the substrate 11 . The two pairs of insulating layer second side surfaces 172 are spaced apart from each other in the y-direction and perpendicular to the y-direction. The two pairs of insulating layer second side surfaces 172 are flush with the pair of substrate second side surfaces 114 of the substrate 11 .

As shown in FIGS. 5, 7 and 9, the insulating layer 13 includes an insulating layer first surface 141, an insulating layer second surface 142, an insulating layer third surface 143, an insulating layer fourth surface 144, and an insulating layer fifth surface. It has a surface 145 , an insulating layer sixth surface 146 , an insulating layer seventh surface 147 , an insulating layer eighth surface 148 and an insulating layer ninth surface 149 .

The insulating layer first surface 141 is a surface of the insulating layer first portion 131 located on one side in the z direction (upper side in the figure). In the illustrated example, the insulating layer first surface 141 is a concave curved surface located on the other side in the z direction as the distance from the substrate third side surface 115 increases as viewed in the z direction. The insulating layer second surface 142 is a surface of the insulating layer second portion 132 located on one side in the z direction (upper side in the figure). In the illustrated example, the insulating layer second surface 142 is a substantially flat surface along the xy plane.

The insulating layer third surface 143 is a surface of the insulating layer third portion 133 located on one side in the z direction. In the illustrated example, the insulating layer third surface 143 is a curved surface that is gently curved so as to be located on the other side in the z direction as the distance from the insulating layer second surface 142 increases as viewed in the z direction. The fifth insulating layer surface 145 is a surface of the third insulating layer portion 133 that faces the side away from the second insulating layer portion 132 in a direction perpendicular to the z direction, and extends along the z direction. The insulating layer fourth surface 144 is interposed between the insulating layer third surface 143 and the insulating layer fifth surface 145 and is configured by a convex curved surface. The insulating layer sixth surface 146 is interposed between the insulating layer fifth surface 145 and the substrate surface 111 and is in contact with the substrate surface 111 . The insulating layer fifth surface 145 is configured by a convex curved surface that is obliquely downwardly convex. The boundary between the insulating layer fifth surface 145 and the base material surface 111 is located closer to the base material third side surface 115 than the insulating layer fifth surface 145 when viewed in the z direction.

The insulating layer seventh surface 147 and the insulating layer eighth surface 148 are surfaces of the insulating layer first portion 131 located on the other side in the z direction (lower side in the drawing). The insulating layer seventh surface 147 is separated from the substrate third side surface 115 when viewed in the z direction, and is in contact with the boundary between the insulating layer first side surface 171 and the insulating layer second side surface 172 . In the illustrated example, the insulating layer first side surface 171 is located on one side in the z-direction from the substrate rear surface 112 . The insulating layer eighth surface 148 is interposed between the insulating layer seventh surface 147 and the substrate third side surface 115 . In the illustrated example, the insulating layer seventh surface 147 is positioned on the other side in the z direction with respect to the insulating layer eighth surface 148 . Further, the insulating layer eighth surface 148 is a convex curved surface having a smaller curvature than the insulating layer seventh surface 147 . The boundary between the insulating layer eighth surface 148 and the substrate third side surface 115 is positioned on one side in the z direction from the boundary between the insulating layer seventh surface 147 and the insulating layer eighth surface 148 .

As shown in FIG. 9 , the insulating layer ninth surface 149 is a surface located on one side in the z direction (upper side in the drawing) of the connecting portion 135 . The insulating layer ninth surface 149 is connected to the insulating layer third surface 143 . The insulating layer ninth surface 149 is a flat surface along the xy plane compared to the insulating layer third surface 143 .

As shown in FIGS. 2 and 4-9, the substrate 1 includes four insulating layer first regions 161, four insulating layer second regions 162, a pair of insulating layer third regions 163 and a pair of insulating layer fourth regions. It has a region 164 .

The insulating layer first region 161 is a region included in the insulating layer first surface 141 of the insulating layer 13. In the present embodiment, the insulating layer first side surface 171, the insulating layer second side surface 172, and the insulating layer first surface 141 intersect. In the illustrated example, the insulating layer first region 161 is located at the center where the radii of the quarter-circular insulating layer first portion 131 (insulating layer first surface 141) intersect when viewed in the z direction.

The insulating layer second region 162 is a region included in the insulating layer second surface 142 . In the illustrated example, the insulating layer second region 162 is a region that overlaps with the substrate third side surface 115 when viewed in the z direction, and has a quarter circle shape when viewed in the z direction.

The insulating layer third region 163 is a region that overlaps the semiconductor light emitting element 2 in the y-direction view at the boundary between the substrate surface 111 and the substrate second side surface 114 . In the illustrated example, the insulating layer third region 163 is located at the center of the boundary between the substrate surface 111 and the substrate second side surface 114 in the x direction.

The insulating layer fourth region 164 is a region overlapping the semiconductor light emitting element 2 when viewed in the x direction at one z-direction edge of the insulating layer first side surface 171 . In the illustrated example, the insulating layer fourth region 164 is positioned at the y-direction center of the z-direction one side edge of the insulating layer first side surface 171 .

As shown in FIGS. 5, 7, and 9, the insulating layer first region 161 is positioned on the other side in the z direction from the insulating layer second region 162. As shown in FIGS. In the illustrated example, the insulating layer first region 161 is located on the other side in the z direction of the conductor layer first surface 124 of the surface first portion 1211 of the conductor layer 12 . Also, in the illustrated example, the insulating layer first region 161 is located on the other side in the z direction of the substrate surface 111 of the substrate 11 .

The semiconductor light emitting element 2 is the light source of the semiconductor light emitting device A1, and has an element body 21, a first electrode 22 and a second electrode 23 in this embodiment. The element body 21 has a semiconductor layer made of, for example, an InGa semiconductor. The first electrode 22 is, for example, a cathode electrode, and the second electrode 23 is, for example, an anode electrode.

In the present embodiment, the semiconductor light emitting device 2 is bonded to the second surface portion 1212 of the surface portion 121 of the conductor layer 12 with a bonding material 25, for example. The joining material 25 is Ag paste or solder, for example.

The first electrode 22 is connected to one surface third portion 1213 by a wire 28 . The wire 28 is made of Au, for example, and has a first bonding portion 281 and a second bonding portion 282 . The first bonding portion 281 is a portion of the wire 28 that is bonded to the surface third portion 1213 . The second bonding portion 282 is a portion of the wire 28 that is bonded to the first electrode 22 .

The second electrode 23 is connected to the other surface third portion 1213 by a wire 29 . Wire 29 is made of Au, for example, and has a first bonding portion 291 and a second bonding portion 292 . The first bonding portion 291 is a portion of the wire 29 that is bonded to the surface third portion 1213 . The second bonding portion 292 is a portion of the wire 29 that is bonded to the second electrode 23 .

The resin portion 3 covers the semiconductor light emitting element 2 and is made of a material that allows the light from the semiconductor light emitting element 2 to pass therethrough. In this embodiment, the resin portion 3 is formed on the substrate surface 111 side (one side in the z direction) of the substrate 1, and covers the substrate surface 111, the surface portion 121 of the conductor layer 12, and the insulating layer 13. there is

The material of the resin portion 3 is not particularly limited as long as it allows the light from the semiconductor light emitting element 2 to pass therethrough. For example, a transparent epoxy resin, silicone resin, or the like is appropriately selected. Moreover, in the present embodiment, the resin portion 3 contains a fluorescent material. This fluorescent material is excited by the light from the semiconductor light emitting device 2 to emit light of a wavelength different from that of the light from the semiconductor light emitting device 2 . For example, when the semiconductor light emitting element 2 emits blue light, the fluorescent material emits yellow light. Thereby, the semiconductor light emitting device A1 emits, for example, white light.

As shown in FIGS. 1 and 4 to 9, in this embodiment, the resin portion 3 has a resin surface 31, a pair of resin first side surfaces 32, and a pair of resin second side surfaces 33. As shown in FIGS.

The resin surface 31 is a surface facing one side in the z direction. The pair of resin first side surfaces 32 are spaced apart from each other in the x direction, and are surfaces perpendicular to the x direction in this embodiment. In the illustrated example, the resin first side surface 32 is flush with the substrate first side surface 113 of the substrate 11 and the insulating layer first side surface 171 of the insulating layer 13 . The pair of resin second side surfaces 33 are spaced apart from each other in the y direction, and are surfaces perpendicular to the y direction in this embodiment. In the illustrated example, the resin second side surface 33 is flush with the base material second side surface 114 of the base material 11 and the insulating layer second side surface 172 of the insulating layer 13 .

The resin portion 3 has four first resin regions 361 , four second resin regions 362 , a third resin region 363 , a pair of fourth resin regions 364 and a pair of fifth resin regions 365 .

The resin first region 361 is a region of the resin surface 31 that overlaps with the insulating layer first region 161 when viewed in the z direction. The resin second region 362 is a region of the resin surface 31 that overlaps with the insulating layer second region 162 when viewed in the z direction. The number of resin first regions 361 is four corresponding to the number of insulating layer first regions 161 being four. In addition, the number of resin second regions 362 is four corresponding to the number of insulating layer second regions 162 being four.

The resin third region 363 is a region of the resin surface 31 that overlaps with the semiconductor light emitting element 2 when viewed in the z direction. In the illustrated example, the resin third region 363 is located in the center of the resin surface 31 .

The pair of resin fourth regions 364 are regions of the resin surface 31 that overlap with the pair of insulating layer third regions 163 when viewed in the z direction. In the illustrated example, the fourth resin area 364 is located at the boundary between the resin surface 31 and the resin second side surface 33 and substantially in the center in the x direction. The pair of fifth resin regions 365 are regions of the resin surface 31 that overlap with the pair of fourth insulating layer regions 164 when viewed in the z direction. In the illustrated example, the fifth resin area 365 is located at the boundary between the resin surface 31 and the first resin side surface 32 and substantially in the center in the y direction.

As shown in FIGS. 4 to 9, the first distance D1, which is the distance in the z direction between the insulating layer first region 161 and the resin first region 361, is the distance between the insulating layer second region 162 and the resin second region 362. It is greater than the second distance D2, which is the distance in the z-direction. A third distance D3, which is the distance between the insulating layer third region 163 and the resin fourth region 364, is smaller than the first distance D1 and larger than the second distance D2. A fourth distance D4 between the fourth insulating layer region 164 and the fifth resin region 365 is smaller than the first distance D1 and larger than the second distance D2.

As shown in FIGS. 4 to 9, in the present embodiment, the first resin region 361 is located on one side in the z direction (upper side in the z direction) than the second resin region 362. As shown in FIGS. Also, the first resin region 361 and the second resin region 362 are located on one side in the z direction (upper side in the z direction) of the third resin region 363 . As a result, the cross-sectional shape (linear shape) of the resin surface 31 shown in FIG. 4 is a curved line gently recessed toward the other side in the z direction (downward in the z direction).

Also, the first resin region 361 and the second resin region 362 are located on one side in the z direction (upper side in the z direction) of the fourth resin region 364 . As a result, as shown in FIG. 6, the upper edge of the second resin side surface 33 is a curved line gently recessed toward the other side in the z direction (lower side in the z direction).

Also, the first resin region 361 and the second resin region 362 are located on one side in the z direction (upper side in the z direction) of the fifth resin region 365 . As a result, as shown in FIG. 8, the upper edge of the first resin side surface 32 is a curved line gently recessed toward the other side in the z direction (lower side in the z direction).

As described above, the resin surface 31 of the present embodiment has the four resin first regions 361 located closest to one side in the z direction, the resin third region 363, the pair of resin fourth regions 364, and the pair of resin third regions. A fifth area 365 is a curved surface located on the other side in the z direction with respect to the four resin first areas 361 . The four second resin regions 362 are located between the four first resin regions 361 and the third resin region 363, the pair of the fourth resin regions 364, and the pair of the fifth resin regions 365 in the z-direction. ing.

Next, an example of a method for manufacturing the semiconductor light emitting device A1 will be described below with reference to FIGS. 11 to 19. FIG.

First, a substrate material 110 shown in FIGS. 11 and 12 is prepared. The substrate material 110 serves as a plurality of base materials 11, and is substantially equivalent to a plurality of base materials 11 arranged in a matrix in the x and y directions. A plurality of through holes 1150 are formed in the substrate material 110 . The through-hole 1150 is a portion that becomes the substrate third side surface 115 by cutting the substrate material 110 .

A conductor layer 120 and an insulating layer 130 are formed on the substrate material 110 . The conductor layer 120 has portions that are to become the respective portions of the conductor layer 12 described above. The insulating layer 130 has portions to be the respective portions of the insulating layer 13 described above. Conductive layer 120 is formed by plating, for example. The insulating layer 130 is formed, for example, by pressing a sheet-like (film-like) solder resist onto the substrate material 110 .

As shown in FIG. 12 , the insulating layer first portion 131 of the insulating layer 130 closes the through hole 1150 . Due to the crimping described above, the second insulating layer portion 132 is made thinner than the first insulating layer portion 131 . The insulating layer first portion 131 has a substantially constant thickness and has a flat plate shape along the xy plane.

Next, as shown in FIGS. 13 and 14, a plurality of semiconductor light emitting devices 2 are bonded. This bonding is performed by bonding the element body 21 of the semiconductor light emitting element 2 to the surface second portion 1212 of the conductor layer 120 with the bonding material 25 . Also, the first electrode 22 and the second electrode 23 of the element body 21 and the pair of surface third portions 1213 are connected by wires 28 and 29 .

Next, as shown in FIG. 14, a mold 71 is set. The mold 71 is for constructing a cavity for resin molding between the substrate surface 111 of the substrate material 110 and the mold 71 .

Next, as shown in FIG. 15, the cavity of the mold 71 is filled with a resin material. At this time, the insulating layer 130 is heated and softened by the relatively high temperature resin material. Then, the filling pressure of the resin material acts on the softened insulating layer 130 . As a result, the insulating layer first portion 131 of the insulating layer 130 is deformed so as to swell toward the other side in the z direction (downward in the z direction). Thereby, the insulating layer first part 131 and the mold 71 are separated from each other. In the figure, the distance D0, which is the distance in the z direction between the mold 71 and the portion of the insulating layer first portion 131 that is the farthest away from the mold 71, is greater than the above-described second distance D2. Also, in the illustrated example, the insulating layer first portion 131 is deformed to such an extent that a portion of the upper surface thereof is located on the other side in the z direction with respect to the substrate surface 111 . The resin material 30 is formed by curing the resin material.

When the filling of the resin material is completed, the mold 71 is removed as shown in FIGS. 16 and 17. FIG. FIG. 17 corresponds to the state immediately after the mold 71 is removed. In this state, the temperature of the resin material 30 and the insulating layer 130 is relatively high with respect to the environmental temperature such as room temperature. A resin surface 31 of the resin material 30 inherits the shape of the mold 71 and is a flat surface extending in the xy plane.

From this state, as the resin material 30 and the insulating layer 130 are cooled, the hardness of the insulating layer 130 begins to recover. Due to this re-curing, the insulating layer first part 131, which has been deformed into a shape that bulges out in the other z direction, exhibits behavior of returning to a flat shape along the xy plane. As a result, the portion of the resin material 30 that overlaps the insulating layer first portion 131 and its peripheral portion when viewed in the z direction are pushed up to one side (upper side) in the z direction. As a result, the resin surface 31 of the resin material 30 has a curved shape in which a portion overlapping the insulating layer first portion 131 (substrate third side surface 1151) swells to one side in the z direction as viewed in the z direction than the surrounding portions. .

After that, the substrate material 110, the conductor layer 120, the insulating layer 130 and the resin material 30 are cut, for example, along the cutting lines Cx and Cy in the drawing. Thereby, a plurality of semiconductor light emitting devices A1 are obtained.

Next, the operation of the semiconductor light emitting device A1 will be described.

According to this embodiment, as shown in FIGS. 4 to 9, the first distance D1 is longer than the second distance D2. As a result of a light emission test of this type of semiconductor light emitting device, when the portion having the first distance D1 is located farther than the second distance D2 from the semiconductor light emitting element 2, the central portion of the semiconductor light emitting device A1 as viewed in the z direction The inventors have found a phenomenon that the color tone of the light L at the edge portion and the edge portion is more uniform. Therefore, according to the semiconductor light emitting device A1, it is possible to suppress variations in color tone.

The resin portion 3 contains a fluorescent material, and diffuses and transmits the light from the semiconductor light emitting element 2 . A portion of the resin portion 3 that is the first distance D1 is arranged on the end side of the semiconductor light emitting element 2 when viewed in the z direction. The light traveling from the semiconductor light emitting element 2 to this portion is largely inclined with respect to the z-direction or travels at an angle close to a right angle with respect to the z-direction. By providing the portion having the first distance D1 on the end side of the resin portion 3, the effect of diffusing such light and directing it to one side in the z direction can be expected. This is preferable for increasing the luminance of the semiconductor light emitting device A1.

In the present embodiment, the first resin region 361 is located on one side in the z direction relative to the third resin region 363 . As a result, the resin surface 31 has a shape in which the central portion where the semiconductor light emitting element 2 is positioned is recessed with respect to the portion where the substrate third side surface 115 is provided. Thereby, as shown in FIGS. 4 and 5, the light L emitted from the resin portion 3 is refracted by the resin surface 31, and the directivity to one side in the z direction can be enhanced.

FIG. 20 shows a usage example of the semiconductor light emitting device A1. In this example, a plurality of semiconductor light-emitting devices A1 are transported or stored using a container 8 in preparation for mounting the semiconductor light-emitting devices A1 on a circuit board or the like. The container 8 has a case 81 and a sheet 82 . Case 81 has a plurality of recesses 811 . The concave portion 811 has a size and shape that can accommodate the semiconductor light emitting device A1. The sheet 82 is detachably attached to the case 81 and closes the recesses 811 .

When a plurality of semiconductor light emitting devices A1 are transported or stored in the container 8, they may be in contact with the bottom of the concave portion 811, as illustrated in the leftmost semiconductor light emitting device A1 in the drawing, or may be in contact with the bottom of the recess 811, as illustrated in the center of the drawing. It is close to the sheet 82 like the semiconductor light emitting device A1 shown in FIG. If the resin surface 31 of the resin portion 3 has a flat shape, the resin surface 31 may come into close contact with the sheet 82 when the sheet 82 is approached. When the semiconductor light emitting device A1 is taken out, the sheet 82 is peeled off and the recess 811 is opened like the semiconductor light emitting device A1 illustrated on the rightmost side in the figure. At this time, if the semiconductor light emitting device A1 is stuck to the sheet 82, it becomes difficult to properly take out the semiconductor light emitting device A1. In particular, when the semiconductor light emitting device A1 is automatically taken out by a device or the like, it causes an operation error.

According to the present embodiment, the resin surface 31 of the resin portion 3 has a shape in which the first resin region 361 is located above the third resin region 363 . Moreover, as shown in FIGS. 6 and 8 , the shape is such that the fourth resin region 364 and the fifth resin region 365 are positioned below the first resin region 361 . Therefore, spaces are formed between the third resin region 363 , the pair of fourth resin regions 364 and the pair of fifth resin regions 365 and the sheet 82 . Since this space does not have a closed structure, it is possible to prevent the resin surface 31 from adhering to the sheet 82 . Therefore, the semiconductor light emitting device A1 can be taken out appropriately.

In this embodiment, the substrate third side surfaces 115 are provided at the four corners when viewed in the z direction, and the resin first regions 361 are provided at the corresponding four corners. Such a configuration is preferable for suppression of variations in color tone and appropriate extraction.

The pair of resin first side surfaces 32 and the pair of resin second side surfaces 33 of the resin portion 3 are flush with the pair of base material first side surfaces 113 and the pair of base material second side surfaces 114 of the base material 11 . That is, the resin portion 3 is configured to overlap the entire base material 11 when viewed in the z direction. As a result, the volume of the resin portion 3 can be increased, and the semiconductor light emitting element 2 having a size larger than the size of the base material 11 can be provided. In this embodiment, wires 28 and 29 are connected to the semiconductor light emitting device 2 . The size of the semiconductor light emitting device A1 can be reduced while appropriately covering the wire 28 and the wire 29 extending on opposite sides in the x direction with the resin portion 3 .

As shown in FIG. 5, the insulating layer first region 161 is located on the other side in the z direction of the substrate surface 111, thereby ensuring a larger first distance D1 and increasing the z-direction dimension of the semiconductor light emitting device A1. Excessive size can be suppressed.

The first insulating layer portion 131 is a portion not supported by the base material 11 . The thickness of the first insulating layer portion 131 is greater than the thickness of the second insulating layer portion 132 . Therefore, even if it is not supported by the base material 11, it is possible to prevent the insulating layer first portion 131 from being accidentally damaged during the manufacturing process of the semiconductor light emitting device A1 or the like. In addition, since the thickness of the second insulating layer portion 132 is thin, the z-direction dimension of the semiconductor light emitting device A1 is reduced, and at the same time, it is insulated from the semiconductor light emitting element 2 beyond the insulating layer second region 162 and the resin second region 362. Light L can be directed to layer first region 161 and resin first region 361 .

The insulating layer 13 has a third insulating layer portion 133 . The insulating layer third part 133 is directly bonded to the substrate surface 111 of the substrate 11 . In general, the insulating layer 13 made of resin or the like has higher bonding strength with the substrate 11 made of an insulating material such as resin than the conductor layer 12 made of metal. Therefore, the third insulating layer portion 133 can prevent the insulating layer 13 from peeling off from the base material 11 .

The insulating layer sixth surface 146 is a curved surface with a shape that wraps inward toward the substrate surface 111 of the substrate 11 . Therefore, part of the resin portion 3 enters between the insulating layer sixth surface 146 and the substrate surface 111 . As a result, the resin portion 3 can be prevented from moving away from the substrate surface 111 of the substrate 11 . In particular, the insulating layer third portion 133 is a portion having high bonding strength to the base material 11, and is therefore suitable for suppressing separation of the resin portion 3. As shown in FIG.

The insulating layer eighth surface 148 is a curved surface located on one side in the z direction toward the substrate third side surface 115 . This allows a larger area of the substrate third side surface 115 to be exposed from the insulating layer 13 . As a result, when the semiconductor light emitting device A1 is mounted on a circuit board or the like, the solder can be attached to a larger area of the substrate third side surface 115 in addition to the back surface first portion 1221, thereby increasing the mounting strength. be able to.

The thickness of the surface first portion 1211 is thinner than the thickness of the insulating layer second portion 132 . Thereby, the z-direction dimension of the semiconductor light emitting device A1 can be reduced. In addition, if the insulating layer second part 132 is too thin, the surface first part 1211 may be unintentionally exposed. According to this embodiment, such a situation can be avoided.

According to the manufacturing method shown in FIGS. 11 to 19, using the mold 71 having a flat shape, the first resin region 361, the second resin region 362, the third resin region 363, the fourth resin region 364 and the It is possible to form a curved resin surface 31 with a resin fifth region 365 . Therefore, it is not necessary to prepare a curved mold 71 corresponding to the resin surface 31 . In addition, there is no need to perform machining or the like for forming the resin surface 31 into a curved surface. This is suitable for increasing the manufacturing efficiency of the semiconductor light emitting device A1. In addition, unlike the present embodiment, the resin surface 31 may be finished into a curved surface by machining or the like. Moreover, when cured in the state shown in FIG. 17, the resin surface 31 has a flat shape unlike the present embodiment. Even with such a configuration, the effect of suppressing variations in color tone can be expected because the first distance D1 is longer than the second distance D2.

Figures 21-28 illustrate variations and other embodiments of the present disclosure. In these figures, the same or similar elements as in the above embodiment are denoted by the same reference numerals as in the above embodiment.

<First embodiment, first modification>
FIG. 21 shows a first modification of the semiconductor light emitting device A1. The semiconductor light emitting device A11 of this modified example differs from the example described above in the relative position of the insulating layer first region 161 in the z direction.

In this modification, the insulating layer first region 161 is located on one side in the z direction of the substrate surface 111 of the substrate 11, and the conductor layer of the substrate surface 111 and the surface first portion 1211 in the z direction. It is positioned between the first surface 124 and the first surface 124 . Corresponding to this, the resin first region 361 of this example is further spaced from the base material surface 111 to one side in the z direction than the example described above.

According to this modification, in addition to the effects of the above-described example, the first resin region 361 is located on one side in the z direction with respect to the third resin region 363, and the dimension of the semiconductor light emitting device A1 in the z direction is increased. You can prevent it from becoming too much.

<First Embodiment, Second Modification>
FIG. 22 shows a second modification of the semiconductor light emitting device A1. The semiconductor light emitting device A12 of this modified example differs from the example described above in the relative position of the insulating layer first region 161 in the z direction.

In this modification, the insulating layer first region 161 is located on one side in the z direction of the conductor layer first surface 124 of the first surface portion 1211 . The insulating layer first region 161 is located between the conductor layer first surface 124 and the insulating layer second region 162 in the z-direction. Corresponding to this, the resin first region 361 of this example is further spaced from the base material surface 111 to one side in the z direction than the example described above.

According to this modified example, in addition to the effects of the above-described example, it is possible to position the first resin region 361 on one side in the z direction with respect to the third resin region 363, and the directivity of the light L is It is preferable to increase

<Third Modification of First Embodiment>
FIG. 23 shows a third modification of the semiconductor light emitting device A1. The semiconductor light emitting device A13 of this modified example differs from the example described above in the relative position of the insulating layer first region 161 in the z direction.

In this modified example, the insulating layer first region 161 is located on one side in the z direction of the insulating layer second region 162 . Corresponding to this, the resin first region 361 of this example is further spaced from the base material surface 111 to one side in the z direction than the example described above.

According to this modified example, in addition to the effects of the above-described example, the first resin region 361 can be further positioned on one side in the z direction with respect to the third resin region 363, and the directivity of the light L is suitable for increasing

<First Embodiment Fourth Modification>
FIG. 24 shows a fourth modification of the semiconductor light emitting device A1. The semiconductor light emitting device A14 of this modified example differs from the example described above in the configuration of the insulating layer 13 .

In this modification, the insulating layer 13 is not provided with the connecting portion 135 of the example described above. Therefore, the two insulating layer third portions 133 located on both sides in the y direction are not connected and are separated from each other.

This modified example can also achieve the same effects as those of the above-described example.

<Second embodiment>
25 and 26 show a semiconductor light emitting device according to a second embodiment of the present disclosure. The semiconductor light-emitting device A2 of this embodiment differs from the above-described embodiments mainly in the number, position and shape of the third side surface 115 of the substrate. In FIG. 25, the resin portion 3 is omitted for convenience of understanding.

In this embodiment, the number of substrate third side surfaces 115 is two. That is, the pair of base material third side surfaces 115 are provided apart from each other in the x direction. The substrate third side surface 115 is formed substantially at the center of the substrate 11 in the y direction. The shape of the third side surface 115 of the substrate when viewed in the z-direction is substantially semicircular.

The first insulating layer portion 131 and the second insulating layer portion 132 of the insulating layer 13 are positioned substantially at the center of the base material 11 in the y direction, corresponding to the position and shape of the third side surface 115 of the base material. The shape of the first insulating layer portion 131 in the z direction is substantially semicircular, and the shape of the second insulating layer portion 132 in the z direction is substantially semicircular.

The pair of insulating layer first regions 161 are located at both ends of the substrate 1 in the x direction and approximately in the center in the y direction. The insulating layer second region 162 has a semicircular shape when viewed in the z direction.

In the semiconductor light emitting device 2, the first electrode 22 and the second electrode 23 are separately provided on the upper and lower surfaces of the device main body 21 in the z direction. The first electrode 22 is bonded to the surface portion 121 with a conductive bonding material 25 . A wire 29 is connected to the second electrode 23 .

The magnitude relationships among the first distance D1, the second distance D2, the third distance D3, and the fourth distance D4 in this embodiment are the same as those of the semiconductor light emitting device A1. Also, the relative positions in the z-direction of the pair of first resin regions 361, the pair of second resin regions 362 and the third resin region 363 are the same as in the semiconductor light emitting device A1.

Variation in color tone can also be suppressed according to the present embodiment. Moreover, as understood from this embodiment, the position and the number of the substrate third side surfaces 115 on the substrate 11 are not particularly limited.

<Third Embodiment>
27 and 28 show a semiconductor light emitting device according to a third embodiment of the present disclosure. The semiconductor light-emitting device A3 of this embodiment is configured such that the resin portion 3 does not overlap the substrate third side surface 115 when viewed in the z direction. In FIG. 27, the resin portion 3 is indicated by imaginary lines for convenience of understanding.

The base material 11 of this embodiment has substantially the same configuration as the base material 11 of the semiconductor light emitting device A1. The pair of resin first side surfaces 32 of the resin portion 3 are located inside the pair of base material first side surfaces 113 and the four base material third side surfaces 115 of the base material 11 in the x direction. The pair of resin first side surfaces 32 are inclined with respect to the z direction so that the distance between them decreases toward one side in the z direction. The pair of resin second side surfaces 33 are flush with the pair of base material second side surfaces 114 of the base material 11 .

The semiconductor light emitting element 2 has, for example, the same configuration as the semiconductor light emitting device A2. The second surface portion 1212 and one first surface portion 1211 are connected by a connecting portion 1215 . The connecting portion 1214 connects the adjacent first surface portions 1211 to each other. The third surface portion 1213 is connected to one first surface portion 1211 by a connecting portion 1215 .

In this embodiment, the substrate 1 has a pair of insulating layer seventh region 167 and insulating layer eighth region 168 . The pair of insulating layer seventh regions 167 are regions where the pair of resin first side surfaces 32 of the resin portion 3 are in contact with each other on the substrate surface 111, and are linear regions extending long in the y direction. The eighth insulating layer region 168 is located between the pair of seventh insulating layer regions 167 in the x direction and is a linear region elongated in the y direction. In the illustrated example, the insulating layer eighth region 168 is positioned substantially at the center of A3 in the x direction.

The resin portion 3 has a pair of a seventh resin region 367 and an eighth resin region 368 . The pair of seventh resin regions 367 is a region including the boundary between the resin surface 31 and the pair of resin first side surfaces 32, and is a linear region elongated in the y direction. The eighth resin region 368 is a region that overlaps with the eighth insulating layer region 168 when viewed in the z direction, and is a linear region that extends long in the y direction. In the present embodiment, the seventh distance D7, which is the distance in the z direction between the seventh insulating layer region 167 and the seventh resin region 367, is the distance in the z direction between the eighth insulating layer region 168 and the eighth resin region 368. is greater than the eighth distance D8. In addition, the pair of seventh resin regions 367 is located on one side in the z direction relative to the eighth resin region 368 . The cross-sectional shape of the resin portion 3 perpendicular to the y-direction is constant. That is, the resin surface 31 is a relatively shallow grooved curved surface extending in the y direction.

According to this embodiment, since the resin surface 31 has a grooved curved surface shape, it is possible to avoid the semiconductor light emitting device A3 from coming into close contact with the sheet 82 in the usage example described with reference to FIG. The semiconductor light emitting device A3 can be properly taken out.

The semiconductor light emitting device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be changed in various ways.

[Appendix A1]
An insulating base material having a base surface facing one thickness direction side and a base back surface facing the other thickness direction side, a conductor layer formed on the base material, and insulation covering a part of the conductor layer a substrate having a layer;
a semiconductor light emitting element mounted on the base material surface side of the substrate;
a resin part that covers the semiconductor light emitting element and transmits light from the semiconductor light emitting element,
The base material of the substrate includes a pair of base first side surfaces each connecting the base surface and the base back surface and spaced apart in a first direction, and each connecting the base surface and the base back surface. a pair of base material third side surfaces that connect and are recessed closer to the semiconductor light emitting element side than the base material first side surfaces when viewed in the thickness direction;
The conductor layer has a surface portion formed on the base material surface and a side surface portion formed on the third side surface of the base material,
The surface portion has a surface first portion adjacent to the semiconductor light emitting element side with respect to the substrate third side surface and connected to the side surface portion,
The insulating layer includes a first insulating layer portion located on the side opposite to the semiconductor light emitting element with respect to the third side surface of the substrate when viewed in the thickness direction, and the surface of the conductor layer when viewed in the thickness direction. an insulating layer second portion overlapping the first portion;
The resin portion covers the insulating layer first portion and the insulating layer second portion of the insulating layer,
An insulating layer first region included in the insulating layer first surface in contact with the resin portion of the insulating layer first portion, and a resin surface of the resin portion overlapping the insulating layer first region when viewed in the thickness direction. The first distance, which is the distance between the first resin region and the resin surface of the resin portion, is the distance between the second insulating layer region included in the second surface of the insulating layer in contact with the resin portion of the second insulating layer portion. and a resin second region that overlaps with the insulating layer second region when viewed in the thickness direction.
[Appendix A2]
The resin surface of the resin portion has a resin third region overlapping with the semiconductor light emitting element when viewed in the thickness direction,
The semiconductor light emitting device according to appendix A1, wherein the first resin region is located on one side in the thickness direction of the third resin region in the thickness direction.
[Appendix A3]
The semiconductor light emitting device according to appendix A2, wherein the first resin region is located on one side in the thickness direction of the second resin region in the thickness direction.
[Appendix A4]
the base material of the substrate includes a pair of base material second side surfaces each connecting the base material surface and the base material back surface and spaced apart in a first direction and a second direction perpendicular to the thickness direction; having four substrate third side surfaces,
The semiconductor light emitting device according to any one of Appendices A1 to A3, wherein the third side surface of the substrate is interposed between the first side surface of the substrate and the second side surface of the substrate.
[Appendix A5]
The resin portion has a pair of resin first side surfaces that are flush with the pair of base material first side surfaces, and a pair of resin second side surfaces that are flush with the pair of base material second side surfaces, The semiconductor light emitting device according to Appendix A4.
[Appendix A6]
The semiconductor according to Appendix A5, wherein the insulating layer has an insulating layer first side surface that is flush with the substrate first side surface, and an insulating layer second side surface that is flush with the substrate second side surface. Luminescent device.
[Appendix A7]
the insulating layer first region is a region where the insulating layer first side surface, the insulating layer second side surface, and the insulating layer first surface intersect;
The semiconductor light-emitting device according to Appendix A6, wherein the insulating layer second region overlaps with the third side surface of the substrate when viewed in the thickness direction.
[Appendix A8]
The resin surface of the resin portion has a fourth resin region which is a boundary with the second resin side surface and overlaps with the semiconductor light emitting element in the first direction,
The semiconductor light emitting device according to appendix A7, wherein the first resin region is located on one side in the thickness direction of the fourth resin region in the thickness direction.
[Appendix A9]
The resin surface of the resin portion has a fifth resin region that is a boundary with the resin first side surface and overlaps the semiconductor light emitting element in the second direction,
The semiconductor light emitting device according to appendix A7 or A8, wherein the first resin region is positioned on one side in the thickness direction of the fifth resin region in the thickness direction.
[Appendix A10]
The semiconductor light emitting device according to any one of Appendices A7 to A9, wherein the insulating layer first region is located on the other side in the thickness direction of the insulating layer second region.
[Appendix A11]
The semiconductor light-emitting device according to Appendix A10, wherein the insulating layer first region is positioned on the other side in the thickness direction with respect to the surface of the base material.
[Appendix A12]
The semiconductor light emitting device according to Appendix A10, wherein the insulating layer first region is located between the base surface and the conductor layer first surface of the first surface portion in the thickness direction.
[Appendix A13]
The semiconductor light-emitting device according to Appendix A10, wherein the insulating layer first region is located on one side in the thickness direction of the substrate surface and the conductor layer first surface of the surface first portion.
[Appendix A14]
The semiconductor light-emitting device according to any one of Appendices A7 to A9, wherein the insulating layer first region is located on one side in the thickness direction of the insulating layer second region.
[Appendix A15]
The semiconductor light-emitting device according to any one of Appendices A1 to A14, wherein the insulating layer has a third insulating layer portion adjacent to the second insulating layer portion and in contact with the surface of the substrate.
[Appendix A16]
The semiconductor light emitting device according to Appendix A15, wherein the thickness of the third insulating layer portion is thicker than the thickness of the second insulating layer portion.
[Appendix A17]
The semiconductor light emitting device according to appendix A16, wherein the thickness of the insulating layer second portion is thicker than the thickness of the surface first portion of the surface portion of the conductor layer.

<Fourth Embodiment>
29 to 38 show a semiconductor light emitting device according to a fourth embodiment of the present disclosure. A semiconductor light-emitting device A4 of this embodiment includes a substrate 1, a semiconductor light-emitting element 2, and a resin portion 3. As shown in FIG. In these figures, the x-direction corresponds to the first direction, the y-direction corresponds to the second direction, and the z-direction corresponds to the thickness direction. The x-, y- and z-directions are perpendicular to each other. The shape and size of the semiconductor light emitting device A4 are not particularly limited. is about 0.15 to 0.3 mm, and has a rectangular shape when viewed in the z direction.

FIG. 29 is a plan view showing the semiconductor light emitting device A4. FIG. 30 is a fragmentary plan view showing the semiconductor light emitting device A4. FIG. 31 is a bottom view showing the semiconductor light emitting device A4. 32 is a cross-sectional view taken along line IV-IV of FIG. 29. FIG. FIG. 33 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting device A4. FIG. 34 is a front view showing the semiconductor light emitting device A4. FIG. 35 is an enlarged front view of a main part showing a semiconductor light emitting device A4. FIG. 36 is a side view showing the semiconductor light emitting device A4. FIG. 37 is an enlarged side view of a main portion showing a semiconductor light emitting device A4. FIG. 38 is a fragmentary plan view showing the substrate 1 of the semiconductor light emitting device A4. As can be understood from line IV-IV in FIG. 29, the horizontal direction in FIG. 32 generally follows the x-direction, but includes portions that do not exactly match the x-direction. This also applies to FIG. 33 .

The substrate 1 supports the semiconductor light emitting device 2 and also forms a conducting path to the semiconductor light emitting device 2 . The substrate 1 has a base material 11 , a conductor layer 12 and an insulating layer 13 .

Base material 11 is a base of substrate 1 and is made of an insulating material such as glass epoxy resin. The substrate 11 has a substrate front surface 111 , a substrate back surface 112 , a pair of substrate first side surfaces 113 , a pair of substrate second side surfaces 114 and a plurality of substrate third side surfaces 115 .

The substrate surface 111 is a surface facing one side in the z direction. The substrate back surface 112 is a surface facing the other side opposite to the substrate front surface 111 in the z direction. In the illustrated example, substrate surface 111 is a flat surface.

The pair of substrate first side surfaces 113 are spaced apart from each other in the x direction and perpendicular to the x direction. The substrate first side surface 113 connects the substrate front surface 111 and the substrate rear surface 112 . In the illustrated example, substrate backside 112 is a flat surface.

The pair of substrate second side surfaces 114 are spaced apart from each other in the y direction and perpendicular to the y direction. The substrate second side surface 114 connects the substrate front surface 111 and the substrate rear surface 112 .

The substrate third side surface 115 connects the substrate front surface 111 and the substrate rear surface 112, and is a surface recessed inwardly from the substrate first side surface 113 when viewed in the z direction. In this embodiment, the substrate third side surface 115 is recessed inward in the x direction with respect to the substrate first side surface 113 . Further, in the present embodiment, the substrate third side surface 115 is interposed between the substrate first side surface 113 and the substrate second side surface 114 adjacent to each other. Further, the base material third side surface 115 is a surface that is recessed more inward than the base material second side surface 114 when viewed in the z direction. concave. In this embodiment, the number of the plurality of base material third side surfaces 115 is four. The four substrate third side surfaces 115 include a pair of substrate third side surfaces 115 . The base material third side surface 115 has a substantially quarter-circular shape when viewed in the z direction.

The conductor layer 12 constitutes a conducting path to the semiconductor light emitting device 2 and is formed on the base material 11 . The conductor layer 12 has, for example, a Cu layer or the like formed by plating. Moreover, an Au layer formed by plating, for example, may be provided on a portion of the conductor layer 12 exposed from the insulating layer 13 . The conductor layer 12 has a surface portion 121 , a back surface portion 122 and four side surface portions 123 .

The surface portion 121 is a portion formed on the substrate surface 111 of the substrate 11 . In this embodiment, the surface portion 121 has four first surface portions 1211 , second surface portions 1212 , a pair of third surface portions 1213 , and a plurality of connecting portions 1214 and 1215 . The two-dot chain lines (imaginary lines) in FIG. 38 indicate the boundaries of the four surface first portions 1211, the surface second portions 1212, the pair of surface third portions 1213, the plurality of connecting portions 1214 and the connecting portions 1215 for convenience. ing.

The surface first portion 1211 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quarter-circle shape when viewed in the z direction. Moreover, the first surface portion 1211 reaches both the substrate first side surface 113 and the substrate second side surface 114 . In this embodiment, four front surface first portions 1211 are formed corresponding to the four base material third side surfaces 115 .

The second surface portion 1212 is provided substantially in the center of the substrate surface 111 and is a portion for mounting the semiconductor light emitting device 2 thereon. When the semiconductor light emitting device 2 is directly mounted on the substrate 11 , the surface portion 121 may be configured without the second surface portion 1212 . In the illustrated example, the surface second portion 1212 has a substantially rectangular shape when viewed in the z direction.

A pair of the third surface portions 1213 are spaced apart in the x direction with the second surface portion 1212 interposed therebetween. The third surface portion 1213 is a portion used to electrically connect the surface portion 121 and the semiconductor light emitting element 2 . In the illustrated example, the surface third portion 1213 is generally rectangular. Also, in the illustrated example, the surface third portion 1213 is spaced from the substrate first side surface 113 of the substrate 11 .

A plurality of connecting portions 1214 are portions that connect the first surface portion 1211 and the third surface portion 1213 that are adjacent to each other. In the illustrated example, the number of connecting portions 1214 is four, each of which has a strip shape extending in the y direction. Also, in the illustrated example, the connecting portion 1214 is spaced apart from the substrate first side surface 113 of the substrate 11 .

The connecting portion 1215 connects the second surface portion 1212 and the connecting portion 1214 . In the illustrated example, the connecting portion 1215 extends long in the x-direction. In the illustrated example, the connecting portion 1215 is spaced from the substrate second side surface 114 of the substrate 11 .

The rear surface portion 122 is a portion formed on the substrate rear surface 112 of the substrate 11 . In this embodiment, the back surface portion 122 has four first back surface portions 1221 and a pair of second back surface portions 1222 . 31 indicate boundaries between the four first rear surface portions 1221 and the pair of second rear surface portions 1222 for convenience.

The back surface first portion 1221 is a portion provided adjacent to the base material third side surface 115 of the base material 11, and in the present embodiment, has a substantially quarter-circle shape when viewed in the z direction. In addition, the back surface first portion 1221 reaches both the substrate first side surface 113 and the substrate second side surface 114 . In this embodiment, four rear surface first portions 1221 are formed corresponding to the four substrate third side surfaces 115 .

The pair of back surface second portions 1222 are provided apart from each other in the x direction. The second rear surface portion 1222 is connected to the first rear surface portion 1221 adjacent in the y direction. The pair of second back surface portions 1222 are used as electrodes when, for example, the semiconductor light emitting device A4 is mounted on a circuit board (not shown) or the like.

The four side portions 123 are formed on the four substrate third side surfaces 115 and respectively cover the four substrate third side surfaces 115 . In this embodiment, the side portion 123 covers substantially the entire third side surface 115 of the substrate. Moreover, the side surface portion 123 is connected to the front surface first portion 1211 of the front surface portion 121 and the rear surface first portion 1221 of the rear surface portion 122 .

The insulating layer 13 is a layer made of an insulating material, covers a portion of the conductor layer 12, and exposes the remaining portion. The material and the like of the insulating layer 13 are not particularly limited. In this embodiment, the insulating layer 13 has a first insulating layer 13A and a second insulating layer 13B. Insulating layer 13 may be composed of three or more layers by further including layers other than first insulating layer 13A and second insulating layer 13B.

The first insulating layer 13A is in contact with the substrate surface 111 of the substrate 11 . As an example of forming the first insulating layer 13</b>A, for example, a sheet-like (film-like) solder resist is pressure-bonded to the base material 11 .

The second insulating layer 13B is stacked on one side in the z direction with respect to the first insulating layer 13A. In the illustrated example, the second insulating layer 13B is in contact with the first insulating layer 13A. Another layer may be interposed between the first insulating layer 13A and the second insulating layer 13B. Second insulating layer 13B is formed by, for example, applying a resin material such as a solder resist to first insulating layer 13A and curing it.

In the illustrated example, as shown in FIG. 33, the thickness ta of the first insulating layer 13A is thicker than the thickness tb of the second insulating layer 13B.

The first insulating layer 13A has a pair of insulating layer first side surfaces 171 and two pairs of insulating layer second side surfaces 172 . The pair of insulating layer first side surfaces 171 are spaced apart from each other in the x-direction and perpendicular to the x-direction. The pair of insulating layer first side surfaces 171 are flush with the pair of substrate first side surfaces 113 of the substrate 11 . The two pairs of insulating layer second side surfaces 172 are spaced apart from each other in the y-direction and perpendicular to the y-direction. The two pairs of insulating layer second side surfaces 172 are flush with the pair of substrate second side surfaces 114 of the substrate 11 .

The second insulating layer 13B has two pairs of insulating layer third side surfaces 191 and two pairs of insulating layer fourth side surfaces 192 . The two pairs of insulating layer third side surfaces 191 are spaced apart from each other in the x direction and perpendicular to the x direction. The two pairs of insulating layer third side surfaces 191 are flush with the pair of insulating layer first side surfaces 171 of the first insulating layer 13A and the pair of base material first side surfaces 113 of the base material 11 . The two pairs of insulating layer fourth side surfaces 192 are spaced apart from each other in the y-direction and perpendicular to the y-direction. The two pairs of insulating layer fourth side surfaces 192 are flush with the two pairs of insulating layer second side surfaces 172 of the first insulating layer 13A and the pair of substrate second side surfaces 114 of the substrate 11 .

As shown in FIGS. 30 and 33, in the present embodiment, the edge 199 of the second insulating layer 13B is located between the substrate third side surface 115 of the substrate 11 and the surface portion 121 of the conductor layer 12 when viewed in the z direction. It is positioned between the edge 1219 of the first surface portion 1211 . That is, the edge 199 overlaps the surface portion 121 when viewed in the z direction, and does not overlap the portion of the substrate surface 111 exposed from the surface portion 121 .

In this embodiment, the insulating layer 13 includes four insulating layer first parts 131, four insulating layer second parts 132, a plurality of insulating layer third parts 133, a plurality of insulating layer fourth parts 134 and a pair of connecting layers. A portion 135 is provided. 30, 33, 35 and 37, two-dot chain lines (imaginary lines) indicate four insulating layer first parts 131, four insulating layer second parts 132, a plurality of insulating layer third parts 133 and Boundaries of the pair of connecting portions 135 are shown for convenience.

In addition, in the present embodiment, a back surface insulating layer 137 is provided on the substrate back surface 112 of the substrate 11 . The back surface insulating layer 137 is provided between the pair of second back surface portions 1222, and is provided, for example, for viewing the polarity of the semiconductor light emitting device A4. The back insulating layer 137 may be formed by a method similar to that of the insulating layer 13, or may be formed by a different method.

The four insulating layer first portions 131 are provided corresponding to the four base material third side surfaces 115 . The insulating layer first portion 131 is positioned outward from the substrate third side surface 115 when viewed in the z direction. In the illustrated example, the insulating layer first portion 131 has a quarter-circular shape when viewed in the z-direction. In the present embodiment, the first insulating layer portion 131 is composed of parts of the first insulating layer 13A and parts of the second insulating layer 13B.

The four insulating layer second portions 132 are provided corresponding to the four base material third side surfaces 115 . The insulating layer second portion 132 is formed on the surface first portion 1211 of the surface portion 121 of the conductor layer 12 and is a portion that overlaps with the surface first portion 1211 when viewed in the z direction. Further, in the present embodiment, the second insulating layer portion 132 is composed of parts of the first insulating layer 13A and parts of the second insulating layer 13B. In the illustrated example, the insulating layer second portion 132 has a quarter ring shape when viewed in the z direction. A first thickness t<b>1 that is the thickness of the first insulating layer portion 131 is thicker than a second thickness t<b>2 that is the thickness of the second insulating layer portion 132 . In addition, the second thickness t2 of the insulating layer second portion 132 is thicker than the thickness of the surface first portion 1211 of the conductor layer 12 .

The insulating layer third part 133 is adjacent to the surface first part 1211 and is in contact with the substrate surface 111 of the substrate 11 . In other words, the conductor layer 12 is not interposed between the insulating layer third portion 133 and the substrate surface 111 of the substrate 11 . In this embodiment, the third insulating layer portion 133 is composed of only a portion of the first insulating layer 13A.

The fourth insulating layer portion 134 is a portion interposed between the second insulating layer portion 132 and the third insulating layer portion 133 on the surface portion 121 (the first surface portion 1211). The fourth insulating layer portion 134 is composed of only a portion of the first insulating layer 13A. A fourth thickness t<b>4 that is the thickness of the fourth insulating layer portion 134 is thinner than the second thickness t<b>2 of the second insulating layer portion 132 . Also, the fourth thickness t4 of the fourth insulating layer portion 134 is thinner than the third thickness t3, which is the thickness of the third insulating layer portion 133 .

The connecting portion 135 connects the insulating layer third portions 133 adjacent to each other in the y direction. In the illustrated example, the connecting portion 135 is strip-shaped extending in the y direction. Also, in the illustrated example, the connecting portion 135 reaches the substrate first side surface 113 of the substrate 11 . In the illustrated example, the connecting portion 135 is made up of only a portion of the first insulating layer 13A.

As shown in FIGS. 33, 35 and 37, the insulating layer 13 includes an insulating layer first surface 141, an insulating layer second surface 142, an insulating layer third surface 143, an insulating layer fourth surface 144, and an insulating layer fifth surface. It has a surface 145 , an insulating layer sixth surface 146 , an insulating layer seventh surface 147 , an insulating layer eighth surface 148 and an insulating layer ninth surface 149 .

The insulating layer first surface 141 is a surface of the insulating layer first portion 131 located on one side in the z direction (upper side in the figure). In the illustrated example, the insulating layer first surface 141 is generally a flat surface along the xy plane. The insulating layer second surface 142 is a surface of the insulating layer second portion 132 located on one side in the z direction (upper side in the figure). In the illustrated example, the insulating layer second surface 142 is a substantially flat surface along the xy plane.

The insulating layer third surface 143 is a surface located on one side in the z direction between the insulating layer third portion 133 and the insulating layer fourth portion 134 . In the illustrated example, the insulating layer third surface 143 is a curved surface that is gently curved so as to be located on the other side in the z direction as the distance from the insulating layer second surface 142 increases as viewed in the z direction. The fifth insulating layer surface 145 is a surface of the third insulating layer portion 133 that faces the side away from the second insulating layer portion 132 in a direction perpendicular to the z direction, and extends along the z direction. The insulating layer fourth surface 144 is interposed between the insulating layer third surface 143 and the insulating layer fifth surface 145 and is configured by a convex curved surface. The insulating layer sixth surface 146 is interposed between the insulating layer fifth surface 145 and the substrate surface 111 and is in contact with the substrate surface 111 . The insulating layer fifth surface 145 is configured by a convex curved surface that is obliquely downwardly convex. The boundary between the insulating layer fifth surface 145 and the base material surface 111 is located closer to the base material third side surface 115 than the insulating layer fifth surface 145 when viewed in the z direction.

The insulating layer seventh surface 147 and the insulating layer eighth surface 148 are surfaces of the insulating layer first portion 131 located on the other side in the z direction (lower side in the drawing). The insulating layer seventh surface 147 is separated from the substrate third side surface 115 when viewed in the z direction, and is in contact with the boundary between the insulating layer first side surface 171 and the insulating layer second side surface 172 . In the illustrated example, the insulating layer first side surface 171 is positioned on the other side in the z direction from the front surface 111 of the base material, and is positioned on the one side in the z direction from the rear surface 112 of the base material. The insulating layer seventh surface 147 is generally a flat surface along the xy plane. The insulating layer eighth surface 148 is interposed between the insulating layer seventh surface 147 and the substrate third side surface 115 . In the illustrated example, the insulating layer seventh surface 147 is positioned on the other side in the z direction with respect to the insulating layer eighth surface 148 . The insulating layer eighth surface 148 is a gently curved convex surface. The boundary between the insulating layer eighth surface 148 and the substrate third side surface 115 is positioned on one side in the z direction from the boundary between the insulating layer seventh surface 147 and the insulating layer eighth surface 148 .

As shown in FIG. 37, the insulating layer ninth surface 149 is a surface located on one side in the z direction (upper side in the figure) of the connecting portion 135 . The insulating layer ninth surface 149 is connected to the insulating layer third surface 143 . The insulating layer ninth surface 149 is a flat surface along the xy plane compared to the insulating layer third surface 143 .

As shown in FIGS. 33, 35 and 37, the fifth thickness t5 corresponding to the distance in the z direction between the substrate surface 111 and the insulating layer first surface 141 is the second thickness of the insulating layer second portion 132. thicker than the thickness t2, the third thickness t3 of the third insulating layer portion 133 and the fourth thickness t4 of the fourth insulating layer portion 134

The semiconductor light emitting element 2 is the light source of the semiconductor light emitting device A4, and has an element body 21, a first electrode 22 and a second electrode 23 in this embodiment. The element body 21 has a semiconductor layer made of, for example, an InGa semiconductor. The first electrode 22 is, for example, a cathode electrode, and the second electrode 23 is, for example, an anode electrode.

In the present embodiment, the semiconductor light emitting device 2 is bonded to the second surface portion 1212 of the surface portion 121 of the conductor layer 12 with a bonding material 25, for example. The joining material 25 is Ag paste or solder, for example.

The first electrode 22 is connected to one surface third portion 1213 by a wire 28 . The wire 28 is made of Au, for example, and has a first bonding portion 281 and a second bonding portion 282 . The first bonding portion 281 is a portion of the wire 28 that is bonded to the surface third portion 1213 . The second bonding portion 282 is a portion of the wire 28 that is bonded to the first electrode 22 .

The second electrode 23 is connected to the other surface third portion 1213 by a wire 29 . Wire 29 is made of Au, for example, and has a first bonding portion 291 and a second bonding portion 292 . The first bonding portion 291 is a portion of the wire 29 that is bonded to the surface third portion 1213 . The second bonding portion 292 is a portion of the wire 29 that is bonded to the second electrode 23 .

The resin portion 3 covers the semiconductor light emitting element 2 and is made of a material that allows the light from the semiconductor light emitting element 2 to pass therethrough. In this embodiment, the resin portion 3 is formed on the substrate surface 111 side (one side in the z direction) of the substrate 1, and covers the substrate surface 111, the surface portion 121 of the conductor layer 12, and the insulating layer 13. there is

The material of the resin portion 3 is not particularly limited as long as it allows the light from the semiconductor light emitting element 2 to pass therethrough. For example, a transparent epoxy resin, silicone resin, or the like is appropriately selected. Moreover, in the present embodiment, the resin portion 3 contains a fluorescent material. This fluorescent material is excited by the light from the semiconductor light emitting device 2 to emit light of a wavelength different from that of the light from the semiconductor light emitting device 2 . For example, when the semiconductor light emitting element 2 emits blue light, the fluorescent material emits yellow light. Thereby, the semiconductor light emitting device A4 emits, for example, white light.

As shown in FIGS. 29 and 32 to 37, in this embodiment, the resin portion 3 has a resin surface 31, a pair of resin first side surfaces 32, and a pair of resin second side surfaces 33. As shown in FIGS.

The resin surface 31 is a surface facing one side in the z direction. In this embodiment, the resin surface 31 is generally a flat surface along the xy plane. The pair of resin first side surfaces 32 are spaced apart from each other in the x direction, and are surfaces perpendicular to the x direction in this embodiment. In the illustrated example, the resin first side surface 32 includes the substrate first side surface 113 of the substrate 11, the insulating layer first side surface 171 of the first insulating layer 13A, and the insulating layer third side surface 191 of the second insulating layer 13B. It is flush with. The pair of resin second side surfaces 33 are spaced apart from each other in the y direction, and are surfaces perpendicular to the y direction in this embodiment. In the illustrated example, the resin second side surface 33 includes the substrate second side surface 114 of the substrate 11, the insulating layer second side surface 172 of the first insulating layer 13A, and the insulating layer fourth side surface 192 of the second insulating layer 13B. It is flush with.

As shown in FIGS. 32 to 37, the first thickness, which is the distance (thickness of the resin portion 3) in the z direction, between the insulating layer first surface 141 and the resin surface 31 at the boundary between the resin surface 31 and the resin first side surface 32. The distance D1 is substantially the same as the second distance D2, which is the distance in the z direction between the insulating layer second surface 142 and the resin surface 31 (thickness of the resin portion 3). A third distance D3, which is the distance in the z direction between the insulating layer third surface 143 and the resin surface 31 (thickness of the resin portion 3), is longer than the first distance D1 and the second distance D2. A fourth distance D4, which is the distance in the z direction between the substrate surface 111 and the resin surface 31 (thickness of the resin portion 3), is longer than the first distance D1, the second distance D2 and the third distance D3.

Next, an example of a method for manufacturing the semiconductor light emitting device A4 will be described below with reference to FIGS. 39 to 44. FIG.

First, substrate material 110 shown in FIGS. 39 and 40 is prepared. The substrate material 110 serves as a plurality of base materials 11, and is substantially equivalent to a plurality of base materials 11 arranged in a matrix in the x and y directions. A plurality of through holes 1150 are formed in the substrate material 110 . The through-hole 1150 is a portion that becomes the substrate third side surface 115 by cutting the substrate material 110 .

A conductor layer 120 and a first insulating layer 130A are formed on the substrate material 110 . The conductor layer 120 has portions that are to become the respective portions of the conductor layer 12 described above. 130 A of 1st insulating layers have the site|part which should become each part of 13 A of 1st insulating layers mentioned above. Conductive layer 120 is formed by plating, for example. The first insulating layer 130A is formed by pressing a sheet-like (film-like) solder resist onto the substrate material 110, for example.

As shown in FIG. 40, the first insulating layer 130A closes the through hole 1150. As shown in FIG. As a result of the crimping described above, the portion of the first insulating layer 130</b>A on the surface first portion 1211 becomes thinner than the portion closing the through hole 1150 . A portion of the first insulating layer 130A that closes the through hole 1150 has a substantially uniform thickness and has a flat plate shape along the xy plane.

Next, as shown in FIGS. 41 and 42, a second insulating layer 130B is formed. The second insulating layer 130B is formed, for example, by applying a solder resist resin material onto the first insulating layer 130A and curing it. In this embodiment, the second insulating layer 130B is formed so as to have a plurality of circular elements enclosed in the through holes 1150 when viewed in the z direction. As a result, portions to be the first insulating layer portion 131, the second insulating layer portion 132, the third insulating layer portion 133, and the fourth insulating layer portion 134 are formed.

Next, a plurality of semiconductor light emitting devices 2 are bonded. This bonding is performed by bonding the element body 21 of the semiconductor light emitting element 2 to the surface second portion 1212 of the conductor layer 120 with the bonding material 25 . Also, the first electrode 22 and the second electrode 23 of the element body 21 and the pair of surface third portions 1213 are connected by wires 28 and 29 .

Next, the mold 71 is set. The mold 71 is for constructing a cavity for resin molding between the substrate surface 111 of the substrate material 110 and the mold 71 .

Next, as shown in FIG. 43, the cavity of the mold 71 is filled with a resin material. At this time, the first thickness t1 of the insulating layer first portion 131 covering the third side surface 115 of the base material is thicker than the second thickness t2 to increase the rigidity. Therefore, the insulating layer first portion 131 maintains a flat shape even when the filling pressure of the resin material acts. Then, the resin material 30 is formed by curing the resin material.

After filling the resin material, the mold 71 is removed as shown in FIG. After that, the substrate material 110, the conductor layer 120, the first insulating layer 130A, and the second insulating layer 130B are cut along, for example, a cutting line Cy along the y direction in the drawing and a cutting line along the x direction (not shown). and the resin material 30 is cut. Thereby, a plurality of semiconductor light emitting devices A4 are obtained.

Next, the operation of the semiconductor light emitting device A4 will be described.

According to the present embodiment, the first thickness t1 of the first insulating layer portion 131 is thicker than the second thickness t2 of the second insulating layer portion 132, as shown in FIGS. Therefore, the rigidity of the insulating layer first portion 131 is enhanced. As a result, for example, in the manufacture of the semiconductor light emitting device A4, when filling the resin material shown in FIG. It is possible to prevent it from happening. Therefore, according to the semiconductor light emitting device A4, variations in the shape of the resin portion 3 can be suppressed. As a result, in the semiconductor light emitting device A4, the resin portion 3 of the present embodiment has a resin surface 31 that is a flat surface.

The insulating layer 13 of this embodiment consists of a first insulating layer 13A and a second insulating layer 13B. By forming the insulating layer first portion 131 by laminating the second insulating layer 13B on the first insulating layer 13A, the rigidity of the insulating layer first portion 131 can be easily and reliably increased. This is preferable for suppressing variations in the shape of the resin portion 3 .

Since the first insulating layer 13A is thicker than the second insulating layer 13B, it is possible to avoid accidental breakage of the first insulating layer 13A during manufacturing of the second insulating layer 13B.

Insulating layer second part 132 includes first insulating layer 13A and second insulating layer 13B. Accordingly, it is possible to prevent the rigidity of the second insulating layer portion 132 from becoming extremely low with respect to the first insulating layer portion 131 . This is preferable for preventing the first insulating layer portion 131 from dropping to the other side in the z direction due to the second insulating layer portion 132 being damaged.

The edge 199 of the second insulating layer 13B is located between the substrate third side surface 115 and the edge 1219 of the first surface portion 1211 when viewed in the z direction, and is positioned from the first surface portion 1211 when viewed in the z direction. It has a structure that does not protrude. This makes it possible to prevent the capillary for forming the first bonding portion 281 of the wire 28 and the first bonding portion 291 of the wire 29 from interfering with the second insulating layer 13B. This is preferable for miniaturization of the semiconductor light emitting device A4.

The insulating layer 13 has a third insulating layer portion 133 . The insulating layer third part 133 is directly bonded to the substrate surface 111 of the substrate 11 . In general, the insulating layer 13 made of resin or the like has higher bonding strength with the substrate 11 made of an insulating material such as resin than the conductor layer 12 made of metal. Therefore, the third insulating layer portion 133 can prevent the insulating layer 13 from peeling off from the base material 11 .

The insulating layer sixth surface 146 is a curved surface with a shape that wraps inward toward the substrate surface 111 of the substrate 11 . Therefore, part of the resin portion 3 enters between the insulating layer sixth surface 146 and the substrate surface 111 . As a result, the resin portion 3 can be prevented from moving away from the substrate surface 111 of the substrate 11 . In particular, the insulating layer third portion 133 is a portion having high bonding strength to the base material 11, and is therefore suitable for suppressing separation of the resin portion 3. As shown in FIG.

The insulating layer eighth surface 148 is a curved surface located on one side in the z direction toward the substrate third side surface 115 . This allows a larger area of the substrate third side surface 115 to be exposed from the insulating layer 13 . As a result, when the semiconductor light emitting device A4 is mounted on a circuit board or the like, the solder can be attached to a larger area of the substrate third side surface 115 in addition to the back surface first portion 1221, thereby increasing the mounting strength. be able to.

The pair of resin first side surfaces 32 and the pair of resin second side surfaces 33 of the resin portion 3 are flush with the pair of base material first side surfaces 113 and the pair of base material second side surfaces 114 of the base material 11 . That is, the resin portion 3 is configured to overlap the entire base material 11 when viewed in the z direction. As a result, the volume of the resin portion 3 can be increased, and the semiconductor light emitting element 2 having a size larger than the size of the base material 11 can be provided. In this embodiment, wires 28 and 29 are connected to the semiconductor light emitting device 2 . The size of the semiconductor light emitting device A4 can be reduced while appropriately covering the wire 28 and the wire 29 extending on opposite sides in the x direction with the resin portion 3 .

As shown in FIG. 33, the fifth thickness t5 is approximately the same as the sum of the second thickness t2 and the thickness of the first surface portion 1211. As shown in FIG. The first thickness t1 is thicker than the fifth thickness t5. The insulating layer first portion 131 having such a first thickness t1 has sufficiently high rigidity, and is advantageous in suppressing variation in the shape of the resin portion 3 .

The thickness of the surface first portion 1211 is thinner than the second thickness t2 of the insulating layer second portion 132 . Thereby, the z-direction dimension of the semiconductor light emitting device A4 can be reduced. Also, if the second thickness t2 of the insulating layer second portion 132 is too thin, the first surface portion 1211 may be unintentionally exposed. According to this embodiment, such a situation can be avoided.

Figures 45-47 illustrate another embodiment of the present disclosure. In these figures, the same or similar elements as in the above embodiment are denoted by the same reference numerals as in the above embodiment.

<Fifth Embodiment>
FIG. 45 shows a semiconductor light emitting device according to a fifth embodiment of the present disclosure. The semiconductor light emitting device A5 of this embodiment differs from the embodiment described above in the configuration of the insulating layer 13 .

In this embodiment, the insulating layer 13 does not have a plurality of distinct layers, and is entirely composed of a single layer. However, the insulating layer 13 has a first insulating layer portion 131 and a second insulating layer portion 132, and the first thickness t1 is thicker than the second thickness t2, as in the above-described embodiment. Also, in the illustrated example, the shape of each part of the insulating layer 13 is the same as in the above-described embodiment, but the detailed configuration may differ from the above-described embodiment.

Such an insulating layer 13 can be formed, for example, by bonding a sheet-like (film-like) solder resist in which a plurality of regions with different thicknesses are formed in advance to the base material 11 . Alternatively, by applying a resin material to the insulating layer formed so as to cover the through hole 1150 and integrating it with the insulating layer, a single layer that does not have a plurality of clearly distinguishable layers after completion can be formed. A recognized configuration may be formed comprising:

According to this embodiment as well, it is possible to obtain the effects of the above-described embodiment, including suppressing variations in the shape of the resin portion 3 . Moreover, as understood from this embodiment, the method of forming the insulating layer 13 is not particularly limited.

<Sixth embodiment>
46 and 47 show a semiconductor light emitting device according to a sixth embodiment of the present disclosure. The semiconductor light-emitting device A6 of this embodiment differs from the above-described embodiments mainly in the number, position and shape of the third side surface 115 of the substrate. In FIG. 46, the resin portion 3 is omitted for convenience of understanding.

In this embodiment, the number of substrate third side surfaces 115 is two. That is, the pair of base material third side surfaces 115 are provided apart from each other in the x direction. The substrate third side surface 115 is formed substantially at the center of the substrate 11 in the y direction. The shape of the third side surface 115 of the substrate when viewed in the z-direction is substantially semicircular.

The first insulating layer portion 131 and the second insulating layer portion 132 of the insulating layer 13 are positioned substantially at the center of the base material 11 in the y direction, corresponding to the position and shape of the third side surface 115 of the base material. The shape of the first insulating layer portion 131 in the z direction is substantially semicircular, and the shape of the second insulating layer portion 132 in the z direction is substantially semicircular.

In the semiconductor light emitting device 2, the first electrode 22 and the second electrode 23 are separately provided on the upper and lower surfaces of the device main body 21 in the z direction. The first electrode 22 is bonded to the surface portion 121 with a conductive bonding material 25 . A wire 29 is connected to the second electrode 23 .

The first thickness t1, the second thickness t2, the third thickness t3, the fourth thickness t4, the fifth thickness t5, the first distance D1, the second distance D2 and the third distance D3 and the third 4 The magnitude relationship of the distance D4 is the same as that of the semiconductor light emitting devices A4 and A5.

According to this embodiment as well, it is possible to obtain the effects of the above-described embodiment, including suppressing variations in the shape of the resin portion 3 . Moreover, as understood from this embodiment, the position and the number of the substrate third side surfaces 115 on the substrate 11 are not particularly limited.

The semiconductor light emitting device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be changed in various ways.

[Appendix B1]
An insulating base material having a base surface facing one thickness direction side and a base back surface facing the other thickness direction side, a conductor layer formed on the base material, and insulation covering a part of the conductor layer a substrate having a layer;
a semiconductor light emitting element mounted on the base material surface side of the substrate;
a resin part that covers the semiconductor light emitting element and transmits light from the semiconductor light emitting element,
The base material of the substrate includes a pair of base first side surfaces each connecting the base surface and the base back surface and spaced apart in a first direction, and each connecting the base surface and the base back surface. a base material third side surface that connects and is recessed closer to the semiconductor light emitting element than the base material first side surface when viewed in the thickness direction;
The conductor layer has a surface portion formed on the base material surface and a side surface portion formed on the third side surface of the base material,
The surface portion has a surface first portion adjacent to the semiconductor light emitting element side with respect to the substrate third side surface and connected to the side surface portion,
The insulating layer includes a first insulating layer portion located on the side opposite to the semiconductor light emitting element with respect to the third side surface of the substrate when viewed in the thickness direction, and the surface of the conductor layer when viewed in the thickness direction. an insulating layer second portion overlapping the first portion;
The resin portion covers the insulating layer first portion and the insulating layer second portion of the insulating layer,
A semiconductor light-emitting device, wherein a first thickness, which is the thickness of the insulating layer first portion, is thicker than a second thickness, which is the thickness of the insulating layer second portion.
[Appendix B2]
The insulating layer has a first insulating layer and a second insulating layer laminated on one side in the thickness direction with respect to the first insulating layer,
The semiconductor light-emitting device according to Appendix B1, wherein the insulating layer first part includes the first insulating layer and the second insulating layer.
[Appendix B3]
The semiconductor light-emitting device according to appendix B2, wherein the thickness of the first insulating layer is thicker than the thickness of the second insulating layer.
[Appendix B4]
The semiconductor light-emitting device according to appendix B2 or B3, wherein the insulating layer second part includes the first insulating layer and the second insulating layer.
[Appendix B5]
The semiconductor light emitting device according to appendix B3, wherein the edge of the second insulating layer is positioned between the edge of the third side surface of the substrate and the edge of the first surface portion when viewed in the thickness direction.
[Appendix B6]
The semiconductor light-emitting device according to any one of Appendices B2 to B4, wherein the insulating layer has a third insulating layer portion adjacent to the first surface portion and in contact with the surface of the substrate.
[Appendix B7]
According to Appendix B6, wherein a first distance that is the distance between the first insulating layer portion and the surface of the resin portion is smaller than a third distance that is the distance between the third insulating layer portion and the surface of the resin portion semiconductor light emitting device.
[Appendix B8]
The semiconductor light emitting device according to appendix B7, wherein a second distance, which is a distance between the second insulating layer portion and the surface of the resin portion, is smaller than the third distance.
[Appendix B9]
Appendix B6, wherein the insulating layer has a fourth insulating layer portion interposed between the second insulating layer portion and the third insulating layer portion on the first surface portion and formed of the second insulating layer. 1 to B8.
[Appendix B10]
The semiconductor light-emitting device according to appendix B9, wherein a fourth thickness, which is the thickness of the fourth insulating layer portion, is thinner than a third thickness, which is the thickness of the third insulating layer portion.
[Appendix B11]
The semiconductor light emitting device according to appendix B10, wherein the second thickness is thicker than the thickness of the first surface portion of the surface portion of the conductor layer.
[Appendix B12]
The semiconductor light emitting device according to appendix B11, wherein the fourth thickness is thicker than the thickness of the first surface portion of the surface portion of the conductor layer.
[Appendix B13]
the base material of the substrate includes a pair of base material second side surfaces each connecting the base material surface and the base material back surface and spaced apart in a first direction and a second direction perpendicular to the thickness direction; having four substrate third side surfaces,
The semiconductor light emitting device according to any one of Appendices B2 to B12, wherein the third side surface of the base material is interposed between the first side surface of the base material and the second side surface of the base material.
[Appendix B14]
The resin portion has a pair of resin first side surfaces that are flush with the pair of base material first side surfaces, and a pair of resin second side surfaces that are flush with the pair of base material second side surfaces, The semiconductor light emitting device according to Appendix B13.
[Appendix B15]
According to Appendix B14, the first insulating layer has an insulating layer first side surface that is flush with the substrate first side surface, and an insulating layer second side surface that is flush with the substrate second side surface. semiconductor light emitting device.
[Appendix B16]
The second insulating layer includes an insulating layer third side surface flush with the substrate first side surface and the insulating layer first side surface, and an insulating layer flush with the substrate second side surface and the insulating layer second side surface. and a fourth side surface. The semiconductor light emitting device according to Appendix B15.
[Appendix B17]
A fifth thickness corresponding to a distance between the substrate surface and the insulating layer first surface located on one side in the thickness direction of the insulating layer first portion is thicker than the second thickness, appendices B1 to B16 The semiconductor light emitting device according to any one of 1.

A1, A11, A12, A13, A2, A3, A4, A5, A6: semiconductor light emitting device 1: substrate 2: semiconductor light emitting element 3: resin part 8: container 11: base material 12: conductor layer 13: insulating layer 13A : first insulating layer 13B : second insulating layer 21 : element body 22 : first electrode 23 : second electrode 25 : bonding material 28 : wire 29 : wire 30 : resin material 31 : resin surface 32 : resin first side surface 33 : Resin second side 71 : Mold 81 : Case 82 : Sheet 110 : Substrate material 111 : Base material front surface 112 : Base material back surface 113 : Base material first side 114 : Base material second side 115 : Base material third side 120 : Conductor layer 121 : Front surface 122 : Back surface 123 : Side surface 124 : Conductor layer first surface 130 : Insulating layer 130A : First insulating layer 130B : Second insulating layer 131 : Insulating layer first part 132 : Insulating layer Second part 133 : Insulating layer Third part 134 : Insulating layer Fourth part 135 : Connecting part 137 : Back insulating layer 141 : Insulating layer first surface 142 : Insulating layer second surface 143 : Insulating layer third surface 144 : Insulation Layer Fourth surface 145: Insulating layer Fifth surface 146: Insulating layer Sixth surface 147: Insulating layer Seventh surface 148: Insulating layer Eighth surface 149: Insulating layer Ninth surface 161: Insulating layer First region 162: Insulating layer Second region 163 : insulating layer Third region 164 : insulating layer Fourth region 167 : insulating layer Seventh region 168 : insulating layer Eighth region 171 : insulating layer first side 172 : insulating layer second side 191 : insulating layer 3rd side 192 : insulating layer 4th side 199 : edge 281 : first bonding portion 282 : second bonding portion 291 : first bonding portion 292 : second bonding portion 361 : resin first region 362 : resin second region 363 : resin third Region 364 : Fourth resin region 365 : Fifth resin region 367 : Seventh resin region 368 : Eighth resin region 811 : Recess 1150 : Through hole 1151 : Third base material side surface 1211 : First surface part 1212 : Second surface Part 1213 : Third front part 1214 : Connecting part 1215 : Connecting part 1219 : Edge 1221 : First back part 1222 : Second back part Cx : Cutting line Cy : Cutting line D0 : Distance D1 : First distance D2 : Third 2 distance D3: third distance D4: fourth distance D7: seventh distance D8: eighth distance L: light

Claims (17)

An insulating substrate having a substrate surface facing one thickness direction side and a substrate back surface facing the other thickness direction side opposite to the one thickness direction side, a conductor layer formed on the substrate; and a substrate having an insulating layer covering a portion of the conductor layer;
a semiconductor light emitting element mounted on the base material surface side of the substrate;
a resin part that covers the semiconductor light emitting element and transmits light from the semiconductor light emitting element,
The base material of the substrate includes a pair of base first side surfaces each connecting the base surface and the base back surface and spaced apart in a first direction, and each connecting the base surface and the base back surface. A pair of substrate second side surfaces that are connected and separated in a second direction perpendicular to the first direction and the thickness direction, and the substrate front surface and the substrate back surface, and in the thickness direction view a third side surface of the substrate recessed toward the semiconductor light emitting element from the first side surface of the substrate;
The conductor layer has a surface portion formed on the base material surface and a side surface portion formed on the third side surface of the base material,
The surface portion has a surface first portion adjacent to the semiconductor light emitting element side with respect to the substrate third side surface and connected to the side surface portion,
The insulating layer includes a first insulating layer portion located on the side opposite to the semiconductor light emitting element with respect to the third side surface of the substrate when viewed in the thickness direction, and the surface of the conductor layer when viewed in the thickness direction. an insulating layer second portion overlapping the first portion;
The resin portion covers the insulating layer first portion and the insulating layer second portion of the insulating layer,
A semiconductor light-emitting device, wherein a first thickness, which is the thickness of the insulating layer first portion, is thicker than a second thickness, which is the thickness of the insulating layer second portion. The insulating layer has a first insulating layer and a second insulating layer laminated on one side in the thickness direction with respect to the first insulating layer,
2. The semiconductor light emitting device according to claim 1, wherein said insulating layer first part includes said first insulating layer and said second insulating layer. 3. The semiconductor light emitting device according to claim 2, wherein said first insulating layer is thicker than said second insulating layer. 4. The semiconductor light emitting device according to claim 2, wherein said insulating layer second portion includes said first insulating layer and said second insulating layer. 4. The semiconductor light emitting device according to claim 3, wherein the edge of said second insulating layer is located between said third side surface of said substrate and said edge of said first surface portion when viewed in said thickness direction. 5. The semiconductor light emitting device according to claim 2, wherein said insulating layer has a third insulating layer portion adjacent to said first surface portion and in contact with said substrate surface. 7. The method according to claim 6, wherein a first distance between the first insulating layer portion and the surface of the resin portion is smaller than a third distance between the third insulating layer portion and the surface of the resin portion. The semiconductor light emitting device described. 8. The semiconductor light-emitting device according to claim 7, wherein a second distance between said insulating layer second portion and the surface of said resin portion is smaller than said third distance. 3. The insulating layer has a fourth insulating layer portion interposed between the second insulating layer portion and the third insulating layer portion on the first surface portion and comprising the first insulating layer. 9. The semiconductor light emitting device according to any one of 6 to 8. 10. The semiconductor light-emitting device according to claim 9, wherein a fourth thickness , which is the thickness of said fourth insulating layer portion, is thinner than a third thickness, which is the thickness of said third insulating layer portion. 11. The semiconductor light emitting device according to claim 10 , wherein said second thickness is thicker than the thickness of said first surface portion. 12. The semiconductor light emitting device according to claim 11 , wherein said fourth thickness is thicker than the thickness of said first surface portion. the substrate of the substrate has four substrate third sides;
13. The semiconductor light emitting device according to claim 2, wherein said substrate third side surface is interposed between said substrate first side surface and said substrate second side surface. The resin portion has a pair of resin first side surfaces that are flush with the pair of base material first side surfaces, and a pair of resin second side surfaces that are flush with the pair of base material second side surfaces, 14. The semiconductor light emitting device according to claim 13. 15. The method according to claim 14, wherein the first insulating layer has an insulating layer first side surface that is flush with the substrate first side surface, and an insulating layer second side surface that is flush with the substrate second side surface. The semiconductor light emitting device described. The second insulating layer includes an insulating layer third side surface flush with the substrate first side surface and the insulating layer first side surface, and an insulating layer flush with the substrate second side surface and the insulating layer second side surface. and a fourth side surface. 2. A fifth thickness corresponding to a distance between the surface of the base material and the first surface of the insulating layer located on one side in the thickness direction of the first insulating layer is thicker than the second thickness . 17. The semiconductor light emitting device according to any one of 16 to 16.

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