KR101208064B1 - Method of fabricating board for LED package and LED package, and board for LED package and LED package by the same method - Google Patents

Method of fabricating board for LED package and LED package, and board for LED package and LED package by the same method Download PDF

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Publication number
KR101208064B1
KR101208064B1 KR1020100071385A KR20100071385A KR101208064B1 KR 101208064 B1 KR101208064 B1 KR 101208064B1 KR 1020100071385 A KR1020100071385 A KR 1020100071385A KR 20100071385 A KR20100071385 A KR 20100071385A KR 101208064 B1 KR101208064 B1 KR 101208064B1
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South Korea
Prior art keywords
led package
substrate
base film
manufacturing
led
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Application number
KR1020100071385A
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Korean (ko)
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KR20120009273A (en
Inventor
시게히사 토마베치
노광민
정제영
히데오 다카하시
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스템코 주식회사
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Publication of KR20120009273A publication Critical patent/KR20120009273A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item

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  • Led Device Packages (AREA)

Abstract

Provided are a substrate for an LED package and a method for producing the LED package, and a substrate and an LED package for an LED package produced thereby. In the method of manufacturing a substrate for an LED package, a base film having a first metal layer formed on one surface is prepared, a cavity for accommodating an LED chip is formed on the base film, and a second metal layer is formed on the other surface of the base film. Forming a through hole penetrating the base film and the metal layer, forming a plating layer electrically connecting the first and second metal layers to each other, and patterning the metal layer and the plating layer to form a circuit.

Description

Method for fabricating LED package and LED package, and LED package and LED package manufactured by this method {Method of fabricating board for LED package and LED package, and board for LED package and LED package by the same method}

The present invention relates to a substrate for an LED package and a method for manufacturing the LED package, and more particularly, to a method for manufacturing an LED package substrate and an LED package, which is lighter and slimmer and has improved heat dissipation characteristics, and a substrate for an LED package manufactured thereby. And to an LED package.

Recently, a light emitting diode (LED) is a device widely used in various products, and its application field is gradually expanding. LEDs have the advantage of lower driving voltage and lower power consumption than other light emitting devices. In addition, it has the advantage of fast response speed and small size and light weight.

According to the trend of miniaturization and thinning of information and communication devices, various parts of the devices are becoming more compact, and in recent years, LEDs have been manufactured in the form of surface mount for direct mounting on a printed circuit board.

The LED package includes a substrate for an LED package and an LED chip, and the LED chip is mounted on a cavity included in the package substrate.

However, the conventional LED package has a structure in which a chip is mounted on a lead frame and the reflector and the mold layer are combined. Such a structure is limited in achieving a thinner and smaller package, and there is a problem in that productivity is lowered.

The present invention is to solve the above problems, to form a cavity in the flexible insulating film and to mount the LED chip to implement the miniaturization and thinning.

The problem to be solved by the present invention is to provide a substrate for an LED package and a method of manufacturing the LED package is slim, improved heat dissipation efficiency and reduced manufacturing cost.

Another object of the present invention is to provide a substrate and LED package for an LED package manufactured by the above method.

Problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

In accordance with an aspect of the present invention, there is provided a method of manufacturing a substrate for an LED package, the base film having a first metal layer formed on one surface thereof, and forming a cavity for accommodating the LED chip in the base film. Forming a second metal layer on the other surface of the base film, forming a through hole penetrating the base film and the metal layer, forming a plating layer electrically connecting the first and second metal layers to each other, and forming the metal layer and the plating layer. Patterning to form a circuit.

Method of manufacturing an LED package according to an embodiment of the present invention for achieving the above object, to prepare a substrate for an LED package manufactured by the method according to an embodiment or another embodiment of the present invention for achieving the above object and And wire-bonding the LED chip to an inner bottom surface of the cavity provided in the LED package substrate.

The LED package substrate according to an embodiment of the present invention for achieving the other object is manufactured by a method according to an embodiment or another embodiment of the present invention for achieving the above object.

LED package according to an embodiment of the present invention for achieving the another object, a substrate for an LED package manufactured by a method according to an embodiment or another embodiment of the present invention for achieving the above object; And an LED chip mounted on an inner lower surface of a cavity provided in the LED package substrate and wire-bonded to conduct electricity with an external power source.

Other specific details of the invention are included in the detailed description and drawings.

According to the present invention, after the through hole is formed in the insulating layer having the first metal layer on one surface, the second metal layer is coated on the other surface to provide a cavity, and the conductive layer penetrates the first and second metal layers and the base film. After the hole is formed, an LED chip is manufactured by wire-bonding the light emitting chip to a plating layer plated on the upper surface of the metal layer on one side and the other side, thereby manufacturing an ultra-thin LED package, thereby making it possible to reduce the size and size of the LED package.

In addition, an inclined surface is provided in the cavity in which the light emitting chip is mounted, and the light efficiency of the LED chip is improved by plating a metal material having high light reflectivity on the inclined surface.

In addition, since the circuit is formed after the second metal layer is formed after the cavity is formed, the precision of cavity processing and the quality reliability of the cavity portion are improved.

And since the mounting area | region of an LED chip is comprised by the multilayer metal, the heat dissipation efficiency of an LED chip is increased and a service life is extended.

1 is a cross-sectional view showing a manufacturing method of a substrate for an LED package according to an embodiment of the present invention step by step.
2 is a cross-sectional view of a substrate for an LED package manufactured according to the method for manufacturing a substrate for an LED package according to an embodiment of the present invention.
3 is a partially enlarged view of a cavity of an LED package substrate manufactured according to a method of manufacturing a substrate for an LED package according to an embodiment of the present invention.
4 is a cross-sectional view of an LED package mounted with an LED chip on the LED package substrate manufactured according to the manufacturing method of the LED package substrate according to an embodiment of the present invention.
5 is a plan view of an LED package mounted with an LED chip on the LED package substrate manufactured according to the method for manufacturing a LED package substrate according to an embodiment of the present invention.
6 is a cross-sectional view of an LED package mounted and molded with an LED chip on the LED package substrate manufactured according to the method for manufacturing a LED package substrate according to an embodiment of the present invention.

Advantages and features of the present invention, and methods of achieving the same will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

Although the first, second, etc. are used to describe various elements, components and / or sections, it is needless to say that these elements, components and / or sections are not limited by these terms. These terms are only used to distinguish one element, element or section from another element, element or section. Therefore, it goes without saying that the first element, the first element or the first section mentioned below may be the second element, the second element or the second section within the technical spirit of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms "comprises" and / or "made of" means that a component, step, operation, and / or element may be embodied in one or more other components, steps, operations, and / And does not exclude the presence or addition thereof.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a manufacturing process of the LED package substrate according to an embodiment of the present invention, Figure 2 is a cross-sectional view of the LED package substrate manufactured according to the manufacturing method of the LED package substrate.

Referring to FIG. 1, in a method of manufacturing a substrate for an LED package, as shown in FIG. 1A, a base film 100 having a first metal layer 110 formed on one surface is prepared. Subsequently, as shown in FIG. 1B, a cavity 120 for accommodating the LED chip is formed in the base film 100. The cavity 120 is formed through the base film 100 on which the first metal layer 110 is formed. As shown in FIG. 1C, the second metal layer 110 ′ is formed on the other surface of the base film 100 so as to close one side of the cavity 120. As shown in FIG. 1 (d), the through hole 130 is formed through the base film 100 and the metal layers 110 and 110 ′. Here, the metal layers 110 and 110 ′ include the first metal layer 110 and the second metal layer 110 ′. Subsequently, as shown in FIG. 1E, a plating layer 140 is formed to electrically connect the first metal layer 110 and the second metal layer 110 ′ with each other. Finally, as shown in FIG. 1F, the metal layers 110 and 110 ′ and the plating layer 140 are patterned to form the pattern circuit 150.

Here, the cavity 120 is a region in which the LED chip is mounted, and the through hole 130 serves as a passage through which electrons move.

Of course, only the first metal layer 110 and the plating layer 140 may be patterned, and only the second metal layer 110 ′ and the plating layer 140 may be patterned.

In addition, the cavity 120 and the through hole 130 are formed at the same time, and the second metal layer 110 ′ is formed, and then the through hole 130 except the cavity 120 and the through hole 130 are closed. The plating layer 140 may be formed to penetrate the second metal layer 110 ′ and electrically connect the first metal layer 110 and the second metal layer 110 ′.

Referring to FIG. 2, the LED package substrate may include a base film 100, a first metal layer 110 formed on one surface of the base film 100, a second metal layer 110 ′ formed on the other surface of the base film 100, and The cavity 120 includes a plating layer 140 and a pattern circuit 150. Both ends of the LED package substrate shown in FIG. 2 may be one surface forming an inner wall of the through hole 130.

The base film 100 may be a white film that reflects light to improve light efficiency, and may be a single or a mixture thereof selected from the group of polymer resins, and may be made of an insulating material having a thickness of 20 to 100 μm. .

The base or the mixture thereof selected from the group consisting of polymer resins including polyimide, polyester, polyethylenenaphthalate, polyethylene terephthalate, epoxy, etc. The film 100 is formed.

In the base film 100 of the present exemplary embodiment, a white resist layer (not shown) reflecting light is formed on one surface of the base film 100, and then the first metal layer 110 is formed on the top surface of the white resist layer. Can be. In the manufacturing process of the substrate for LED package of the present invention, after forming a white resist layer on one surface of the base film 100, the first metal layer 110 is formed on the upper surface of the white resist layer, the base film 100 and the first 1 The cavity 120 penetrating the metal layer 110 is processed. In addition, after the white resist layer is formed on one surface of the base film 100, the cavity 120 penetrating the base film 100 may be processed, and then the first metal layer 110 may be formed on the upper surface of the white resist layer. have.

The white resist layer may be formed by roll coating or screen printing an ink including a synthetic resin such as polyimide, polyethylene terephthalate (PET), urethane, and acrylic, and a white pigment or white dye.

Forming the metal layers 110 and 110 ′ on the base film 100 includes sputtering the first metal layer 110 on one surface of the base film 100, and forming a second metal layer on the other surface of the base film 100. 110 '). The first metal layer 110 is, for example, a metal such as gold, aluminum, copper, or the like, and may be formed by sputtering on one surface of the base film 100, respectively. The second metal layer 110 may be bonded on the other surface of the base film 100 by using a laminating method using an adhesive layer (not shown).

As such, when the second metal layer 110 'is formed, a laminating method or the like may be used to form the second metal layer 110' made of an inexpensive material, thereby reducing the manufacturing cost of the LED package substrate. In addition, for example, the metal layers 110 and 110 ′ may be formed to a thickness of about 1 to 35 μm.

On the surfaces of the first and second metal layers 110 and 110 ', a plating layer 140 such as tin (Sn), nickel, gold, or solder is formed to electrically connect the first and second metal layers 110 and 110' to each other. Can be formed. The plating layer 140 may be formed to a thickness of, for example, about 5 to 35 μm, and may be made of a single or multi-layered metal.

In the forming of the plating layer 140, a conductive film (not shown) is formed by sputtering or shadowing the inner wall of the cavity 120 and the through hole 130, and then the first and second metal layers 110 and 110 ′ are formed. And plating may be performed on the conductive film.

That is, the inner surface of the cavity 120 and the through hole 130 is subjected to a shadow treatment for adhering a conductive material such as copper or carbon to form a plating layer 140.

When the cavity 120 has a vertical shape or a curved shape, the flatness of the bottom surface is lowered, and thus, when the LED chip 200 is mounted on the cavity 120, the bonding strength decreases, and the light emitted from the LED chip 200 is vertical. Alternatively, since the light loss occurs by hitting the side surface of the curved shape, the efficiency of the LED package is lowered, and thus the cavity 120 is provided in a cross-sectional view in which the size of the inner diameter gradually increases from the lower portion occluded to the second metal layer 110 'to the upper portion. It is preferable to have an inclined side surface at an angle.

Referring to FIG. 3, when the outer angle of the point where the inner lower surface and the inner side surface of the cavity meet is the inclination θ of the inner inclined surface of the cavity 120, the θ is preferably 60 degrees or less.

In addition, the plating layer 140 is formed of a metal material having a high light reflectance such as gold or silver, thereby improving reflection efficiency for reflecting light generated from the LED chip 200 to the outside, and improving a directivity angle for emitting light to the outside. It can raise light efficiency.

After forming the plating layer 140 to electrically connect the first and second metal layers 110 and 110 ′ formed on one surface and the other surface of the base film 100, and patterning to form the pattern circuit 150, A silver plating layer (not shown) may be formed on the pattern circuit 150.

Forming the pattern circuit 150 through patterning is performed by forming a copper layer by electroless copper plating and electrolytic copper plating, forming a wiring by an etching process or the like for the copper plating layer, and performing nickel plating and gold or silver plating. After the circuit is formed, silver is electroplated to form a reflective wall.

4 and 5, the LED chip 200 is mounted on the cavity 120 of the substrate for LED package manufactured according to the embodiment of the present invention and bonded with the wire 205.

The LED chip 200 may include at least one of light emitting devices generating blue, red, green, and UV wavelengths. In addition, the wire 205 is a metal material through which electricity is supplied.

On the cavity 120 of the substrate for LED packages, not only one LED chip 200 but also a plurality of LED chips 200 may be formed, and when the plurality of LED chips 200 is mounted, the plurality of LED chips 200 is bonded by a plurality of wires 205.

The LED chip 200 may be located on the lower wiring to quickly dissipate heat to the lower part, and form a heat dissipation pattern on the lower part of the LED package to effectively discharge heat generated by the operation of the LED chip 200 to LED. The reliability and lifetime of the package can be improved.

In addition, as shown in FIG. 6, the LED package including the LED package substrate and the LED chip 200 further includes a mold layer 210 surrounding the LED chip 200. The mold layer 210 may be a transparent resin to simultaneously perform a function of protecting the LED chip 200 from an external environment and a function of adjusting an angle of light emitted from the LED chip 200 to the outside. The transparent resin may be, for example, epoxy, silicone, modified silicone, urethane, oxetane, acrylic, polycarbonate, polyimide, or the like.

It will be apparent to those skilled in the art that the same embodiment of the method of manufacturing the LED package of the present invention can be inferred from the method of manufacturing the substrate for the LED package described above.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

100: base film 110: first metal layer
110 ′: second metal layer 120: cavity
130: through hole 140: plating layer
150: pattern circuit 200: LED chip
205: wire 210: mold layer

Claims (10)

Preparing a base film having a first metal layer formed on one surface thereof,
Forming a cavity for accommodating the LED chip in the base film,
Forming a second metal layer on the other surface of the base film;
Forming a through hole penetrating the base film and the metal layer;
A conductive film is formed on the inner wall of the cavity and the through hole by sputtering or shadowing;
Plating on the first and second metal layers and the conductive layer to form a plating layer electrically connecting the first and second metal layers to each other;
The method of manufacturing a substrate for an LED package comprising patterning the metal layer and the plating layer. The method of claim 1,
The base film is a manufacturing method of the LED package substrate, characterized in that the white film reflecting light. The method of claim 1,
The base film is a method of manufacturing a substrate for an LED package, characterized in that a single or a mixture thereof selected from the group consisting of a polymer resin. The method of claim 1,
After forming a white resist layer reflecting light on the one surface of the base film, the method of manufacturing a substrate for an LED package, characterized in that to form a first metal layer on the upper surface of the white resist layer. The method of claim 1,
The cavity
From the top to the bottom, the size of the internal cross-sectional area decreases, and has an internal inclined surface at an angle,
The internal inclined surface is a manufacturing method of the LED package substrate, characterized in that having a slope of less than 60 degrees. The method of claim 1,
After the said patterning, the manufacturing method of the board | substrate for LED packages characterized by forming a silver plating layer in the said circuit. delete An LED package substrate manufactured by the method of manufacturing a substrate for an LED package according to any one of claims 1 to 6. A substrate for an LED package manufactured by the method of any one of claims 1 to 6 is prepared,
The LED package manufacturing method comprising mounting the LED chip on the inner bottom surface of the cavity provided in the LED package substrate. A substrate for an LED package manufactured by the method of any one of claims 1 to 6; And
And an LED chip mounted on an inner bottom surface of a cavity provided in the LED package substrate and wire-bonded to conduct electricity with an external power source.
KR1020100071385A 2010-07-23 2010-07-23 Method of fabricating board for LED package and LED package, and board for LED package and LED package by the same method KR101208064B1 (en)

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KR1020100071385A KR101208064B1 (en) 2010-07-23 2010-07-23 Method of fabricating board for LED package and LED package, and board for LED package and LED package by the same method

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KR1020100071385A KR101208064B1 (en) 2010-07-23 2010-07-23 Method of fabricating board for LED package and LED package, and board for LED package and LED package by the same method

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KR101532388B1 (en) * 2012-10-12 2015-07-01 주식회사 잉크테크 Method for manufacturing precision PCB forming circuit pattern and connecting the circuit pattern through via-hole
KR102119581B1 (en) * 2013-07-15 2020-06-08 엘지이노텍 주식회사 Method for manufacturing substrate and the substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353592A (en) 2001-05-30 2002-12-06 Nippon Mektron Ltd Method for producing double-sided flexible circuit board
JP2005051012A (en) * 2003-07-28 2005-02-24 Sumitomo Metal Electronics Devices Inc High heat radiating plastic package and its manufacturing method
JP2010010298A (en) 2008-06-25 2010-01-14 Mitsui Mining & Smelting Co Ltd Flexible printed wiring base material and semiconductor apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353592A (en) 2001-05-30 2002-12-06 Nippon Mektron Ltd Method for producing double-sided flexible circuit board
JP2005051012A (en) * 2003-07-28 2005-02-24 Sumitomo Metal Electronics Devices Inc High heat radiating plastic package and its manufacturing method
JP2010010298A (en) 2008-06-25 2010-01-14 Mitsui Mining & Smelting Co Ltd Flexible printed wiring base material and semiconductor apparatus

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