JP2012209389A - Wiring board for mounting light-emitting element, light-emitting device and method for manufacturing wiring board for mounting light-emitting element - Google Patents

Wiring board for mounting light-emitting element, light-emitting device and method for manufacturing wiring board for mounting light-emitting element Download PDF

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JP2012209389A
JP2012209389A JP2011073146A JP2011073146A JP2012209389A JP 2012209389 A JP2012209389 A JP 2012209389A JP 2011073146 A JP2011073146 A JP 2011073146A JP 2011073146 A JP2011073146 A JP 2011073146A JP 2012209389 A JP2012209389 A JP 2012209389A
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main surface
insulating substrate
emitting element
light emitting
light
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Fumiya Isaka
文哉 伊坂
Noboru Imai
昇 今井
Yuzuru Ashitachi
譲 芦立
Tetsuro Kitamura
哲郎 北村
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

PROBLEM TO BE SOLVED: To provide excellent reflection characteristics by enhancing the reflected amount of light from the light-emitting element-mounting surface side of an insulating substrate.SOLUTION: A wiring substrate for mounting a light-emitting element includes: the insulating substrate 10 in which a first main surface 10a side serves as a light reflection surface 12a; a conductive part 20v which is formed so as to penetrate the insulating substrate 10 therethrough and electrically connects the first main surface 10a and a second surface 10b of the insulating substrate 10; and a conductor pattern 31p for the conductive part which is formed on the second main surface 10b of the insulating substrate 10 and connected to the conductive part 20v. A part exposed to the first main surface 10a side of the conductive part 20v is capable of wire bonding connection with a light-emitting element which is mounted so as to emit the light from the first main surface 10a of the insulating substrate 10 toward the outside.

Description

本発明は、発光素子搭載用配線基板、発光装置、および発光素子搭載用配線基板の製造方法に関する。   The present invention relates to a light emitting element mounting wiring board, a light emitting device, and a method for manufacturing a light emitting element mounting wiring board.

携帯電話やノート型のパーソナルコンピュータを代表とする液晶ディスプレイを用いた携帯機器や、LEDバックライトを用いた液晶テレビジョン、さらにはLED電球等のように、近年、省エネルギーやCO排出低減を目的として、LEDチップ等の発光素子を光源とする製品が増えつつある。発光素子は、例えばガラスエポキシ基板やアルミニウムベース基板、セラミックス基板等の配線基板上に発光素子が実装されたLEDモジュールやLEDパッケージ等の発光装置として、上記製品に組み込まれている。或いは、リードフレーム上に発光素子を実装して白色モールド樹脂で成形した発光装置が用いられることもある。 In recent years, for the purpose of saving energy and reducing CO 2 emissions, such as portable devices using liquid crystal displays such as mobile phones and notebook personal computers, liquid crystal televisions using LED backlights, and LED bulbs. As a result, products using light emitting elements such as LED chips as light sources are increasing. The light emitting element is incorporated in the above product as a light emitting device such as an LED module or an LED package in which the light emitting element is mounted on a wiring substrate such as a glass epoxy substrate, an aluminum base substrate, or a ceramic substrate. Alternatively, a light emitting device in which a light emitting element is mounted on a lead frame and molded with a white mold resin may be used.

これらの発光装置に実装される発光素子としては、例えばGaN系青色LEDチップ等が使用される。青色LEDチップは、例えば青色光を白色光に波長変換することができる蛍光体を混入した封止材で封止され、白色発光するように構成されている。その際、発光特性のばらつきを抑えるため、例えば0.25mm×0.35mm角などの小さなサイズで使用される場合が多い。   As a light emitting element mounted on these light emitting devices, for example, a GaN blue LED chip or the like is used. For example, the blue LED chip is sealed with a sealing material mixed with a phosphor capable of converting blue light into white light and configured to emit white light. At that time, in order to suppress variation in the light emission characteristics, it is often used in a small size such as 0.25 mm × 0.35 mm square.

例えば特許文献1には、配線基板を用いた発光装置として、絶縁基板に形成された貫通穴内の底面の金属薄板にLEDチップが実装され、このLEDチップと絶縁基板の表面に形成された金属層とが金属細線で接続されて、透明樹脂により封止されたチップ部品型LED(発光装置)が開示されている。表面の金属層と裏面の金属薄板とは、絶縁基板の表面、裏面及び側面に形成された配線パターンにより接続されている。配線パターンや金属層上には、例えば銀(Ag)等が積層されている。   For example, in Patent Document 1, as a light emitting device using a wiring board, an LED chip is mounted on a metal thin plate on the bottom surface in a through hole formed in an insulating substrate, and the LED chip and a metal layer formed on the surface of the insulating substrate are disclosed. And a chip component type LED (light emitting device) which is connected with a thin metal wire and sealed with a transparent resin. The metal layer on the front surface and the thin metal plate on the back surface are connected by a wiring pattern formed on the front surface, the back surface, and the side surface of the insulating substrate. For example, silver (Ag) or the like is laminated on the wiring pattern or the metal layer.

このような発光装置において、発光素子が発した光を最大限に活用するためには、絶縁基板の表面、つまり、発光素子が搭載される面側から光を反射させることが有効であり、上記特許文献1のように、発光素子の搭載面に形成された配線パターン等に銀(Ag)メッキ等を被覆することも一般に用いられる手法の1つである。   In such a light-emitting device, in order to make maximum use of light emitted from the light-emitting element, it is effective to reflect light from the surface of the insulating substrate, that is, the surface on which the light-emitting element is mounted. As in Patent Document 1, it is also one of commonly used techniques to cover a wiring pattern or the like formed on the mounting surface of the light emitting element with silver (Ag) plating or the like.

特開平07−235696号公報Japanese Patent Application Laid-Open No. 07-235696

しかしながら、上述のようなAgメッキは、メッキ加工時におけるムラや色調などの外観の管理が難しく、また、発光装置の製造後においても硫化などにより変色し、発光素子搭載面側からの光の反射量が低下し易いという欠点がある。   However, Ag plating as described above is difficult to manage the appearance such as unevenness and color tone at the time of plating, and also changes color due to sulfuration after the light emitting device is manufactured, and light is reflected from the light emitting element mounting surface side. There is a drawback that the amount tends to decrease.

本発明の目的は、絶縁基板の発光素子搭載面側からの光の反射量を高め、良好な反射特性を有する発光素子搭載用配線基板、発光装置および発光素子搭載用配線基板の製造方法を提供することにある。   An object of the present invention is to provide a light emitting element mounting wiring board, a light emitting device, and a method for manufacturing the light emitting element mounting wiring board having a good reflection characteristic by increasing the amount of light reflected from the light emitting element mounting surface side of the insulating substrate. There is to do.

本発明の第1の態様によれば、第1主面側が光反射面となっている絶縁基板と、前記絶縁基板を貫通するように形成され、前記絶縁基板の前記第1主面と第2主面とを導通させる導電部と、前記絶縁基板の前記第2主面上に形成され、前記導電部と接続する導電部用導体パターンと、を有し、前記導電部の前記第1主面側に露出した部分が、前記絶縁基板の前記第1主面側から外部に向けて光を発するように搭載される発光素子とワイヤボンディング接続可能に構成されている発光素子搭載用配線基板が提供される。   According to the first aspect of the present invention, the first main surface side and the second main surface of the insulating substrate are formed so as to penetrate the insulating substrate, the first main surface side being a light reflecting surface, and the insulating substrate. A conductive portion that conducts to a main surface; and a conductive pattern for a conductive portion that is formed on the second main surface of the insulating substrate and is connected to the conductive portion, and the first main surface of the conductive portion. Provided is a light emitting element mounting wiring board configured such that a portion exposed to the side is connected to a light emitting element mounted so as to emit light from the first main surface side of the insulating substrate toward the outside. Is done.

本発明の第2の態様によれば、前記絶縁基板の前記第1主面側から前記第2主面側に向かって内径が小さくなるように前記絶縁基板を貫通し、前記発光素子を収容可能に構成される収容穴と、前記収容穴から前記第1主面側へ向かって一部が露出するように前記絶縁基板の前記第2主面上に形成され、露出部分に前記発光素子を搭載可能に構成される搭載用導体パターンと、を有する第1の態様に記載の発光素子搭載用配線基板が提供される。   According to the second aspect of the present invention, the light emitting element can be accommodated through the insulating substrate so that the inner diameter decreases from the first main surface side to the second main surface side of the insulating substrate. A housing hole formed on the second main surface of the insulating substrate so that a part of the housing hole is exposed from the housing hole toward the first main surface, and the light emitting element is mounted on the exposed portion. There is provided a wiring board for mounting a light emitting element according to the first aspect, including a mounting conductor pattern that can be configured.

本発明の第3の態様によれば、前記光反射面の光の全反射率は、波長が450nmの光に対して80%以上である第1又は第2の態様に記載の発光素子搭載用配線基板が提供される。   According to the third aspect of the present invention, the total reflectance of light on the light reflecting surface is 80% or more for light having a wavelength of 450 nm, for mounting the light emitting element according to the first or second aspect. A wiring board is provided.

本発明の第4の態様によれば、前記光反射面は、略白色である第1〜第3の態様のいずれかに記載の発光素子搭載用配線基板が提供される。   According to a fourth aspect of the present invention, there is provided the light emitting element mounting wiring board according to any one of the first to third aspects, wherein the light reflecting surface is substantially white.

本発明の第5の態様によれば、前記絶縁基板は、前記絶縁基板の前記第2主面側に配置される基材と、前記絶縁基板の前記第1主面側に配置され、前記絶縁基板の前記光反射面を構成する白色絶縁材と、を有する第1〜第4の態様のいずれかに記載の発光素子搭載用配線基板が提供される。   According to a fifth aspect of the present invention, the insulating substrate is disposed on the second main surface side of the insulating substrate, on the first main surface side of the insulating substrate, and on the insulating substrate. A wiring board for mounting a light-emitting element according to any one of the first to fourth aspects, comprising: a white insulating material that constitutes the light reflecting surface of the substrate.

本発明の第6の態様によれば、前記基材は、厚さが4μm以上75μm以下の、ポリイミド、ポリアミドイミド、ポリエチレンナフタレート、エポキシ、アラミドのいずれかの樹脂からなり、前記絶縁基板は、曲率半径が50mm以下に折り曲げ可能である第5の態様に記載の発光素子搭載用配線基板が提供される。   According to the sixth aspect of the present invention, the base material is made of any resin of polyimide, polyamideimide, polyethylene naphthalate, epoxy, and aramid having a thickness of 4 μm or more and 75 μm or less. The wiring board for mounting a light emitting element according to the fifth aspect, in which a curvature radius can be bent to 50 mm or less, is provided.

本発明の第7の態様によれば、前記収容穴の側壁面には、反射塗膜が形成されている第2〜第6の態様のいずれかに記載の発光素子搭載用配線基板が提供される。   According to a seventh aspect of the present invention, there is provided the wiring board for mounting a light emitting element according to any one of the second to sixth aspects, wherein a reflective coating film is formed on a side wall surface of the accommodation hole. The

本発明の第8の態様によれば、前記搭載用導体パターンの前記収容穴から露出した部分及び前記導電部の前記第1主面側に露出した部分には、金、銀、パラジウム、ニッケル、錫のいずれかの元素を含むメッキが施されている第2〜第7の態様のいずれかに記載の発光素子搭載用配線基板が提供される。   According to the eighth aspect of the present invention, the portion exposed from the accommodation hole of the mounting conductor pattern and the portion exposed to the first main surface side of the conductive portion include gold, silver, palladium, nickel, The wiring board for light emitting element mounting in any one of the 2nd-7th aspect with which the plating containing any element of tin is given is provided.

本発明の第9の態様によれば、第1主面側が光反射面となっている絶縁基板と、前記絶縁基板を貫通するように形成され、前記絶縁基板の前記第1主面と第2主面とを導通させる導電部と、前記絶縁基板の前記第2主面上に形成され、前記導電部と接続する導電部用導体パターンと、を有する発光素子搭載用配線基板を備え、前記導電部の前記第1主面側に露出した部分には、前記絶縁基板の前記第1主面側から外部に向けて光を発するように搭載された発光素子がワイヤボンディング接続されている発光装置が提供される。   According to the ninth aspect of the present invention, an insulating substrate having a light reflecting surface on the first main surface side, the first main surface and the second surface of the insulating substrate are formed so as to penetrate the insulating substrate. A light-emitting element mounting wiring board, comprising: a conductive portion that conducts to a main surface; and a conductive pattern for a conductive portion that is formed on the second main surface of the insulating substrate and is connected to the conductive portion. A light emitting device in which a light emitting element mounted so as to emit light from the first main surface side of the insulating substrate to the outside is wire-bonded to a portion exposed to the first main surface side of the portion; Provided.

本発明の第10の態様によれば、前記発光素子搭載用配線基板は、前記絶縁基板の前記第1主面側から前記第2主面側に向かって内径が小さくなるように前記絶縁基板を貫通し、前記発光素子が収容された収容穴と、前記収容穴から前記第1主面側へ向かって一部が露出するように前記絶縁基板の前記第2主面上に形成され、露出部分に前記発光素子が搭
載された搭載用導体パターンと、を有し、前記発光素子は、封止材により前記収容穴内に封止されている第9の態様に記載の発光装置が提供される。
According to a tenth aspect of the present invention, the wiring board for mounting a light emitting element has the insulating substrate so that the inner diameter decreases from the first main surface side to the second main surface side of the insulating substrate. An exposed portion that penetrates and is formed on the second main surface of the insulating substrate so as to be partially exposed from the receiving hole toward the first main surface side. And a mounting conductor pattern on which the light emitting element is mounted. The light emitting device according to the ninth aspect, wherein the light emitting element is sealed in the housing hole by a sealing material.

本発明の第11の態様によれば、前記搭載用導体パターンに搭載された前記発光素子は、前記導電部にワイヤボンディング接続されると共に、前記搭載用導体パターンにダイボンディング接続されている第10の態様に記載の発光装置が提供される。   According to an eleventh aspect of the present invention, the light-emitting element mounted on the mounting conductor pattern is wire-bonded to the conductive portion and die-bonded to the mounting conductor pattern. The light-emitting device according to the aspect is provided.

本発明の第12の態様によれば、前記発光素子搭載用配線基板は、前記絶縁基板を貫通するように形成され、前記絶縁基板の前記第1主面と前記第2主面とを導通させる他の導電部と、前記絶縁基板の前記第2主面上に形成され、前記他の導電部と接続する他の導電部用導体パターンと、を有し、前記搭載用導体パターンに搭載された前記発光素子は、前記導電部にワイヤボンディング接続されると共に、前記他の導電部の前記第1主面側に露出した部分に、ワイヤボンディング接続されている第10の態様に記載の発光装置が提供される。   According to a twelfth aspect of the present invention, the wiring board for mounting a light emitting element is formed so as to penetrate the insulating substrate, and electrically connects the first main surface and the second main surface of the insulating substrate. Another conductive part and another conductive part conductive pattern formed on the second main surface of the insulating substrate and connected to the other conductive part, and mounted on the mounting conductive pattern The light-emitting device according to the tenth aspect, wherein the light-emitting element is wire-bonded to the conductive portion and wire-bonded to a portion exposed to the first main surface side of the other conductive portion. Provided.

本発明の第13の態様によれば、第1主面側が光反射面となっている絶縁基板に、貫通孔を形成する貫通孔形成工程と、前記絶縁基板の第2主面上に、前記貫通孔を覆うように導体層を形成する導体層形成工程と、前記絶縁基板の前記第1主面側から前記貫通孔内に導電材を充填し、前記絶縁基板の前記第1主面と前記第2主面とを導通させる導電部を形成する導電部形成工程と、前記絶縁基板の前記第2主面上に形成した前記導体層をエッチングして、前記導電部と接続する導電部用導体パターンを形成するエッチング工程と、を有し、前記導電部形成工程では、前記導電部の前記第1主面側に露出した部分を、前記絶縁基板の前記第1主面側から外部に向けて光を発するように搭載される発光素子とワイヤボンディング接続可能に構成する発光素子搭載用配線基板の製造方法が提供される。   According to the thirteenth aspect of the present invention, on the insulating substrate whose first main surface side is a light reflecting surface, a through hole forming step of forming a through hole, and on the second main surface of the insulating substrate, A conductor layer forming step of forming a conductor layer so as to cover the through-hole, and filling the through-hole with a conductive material from the first main surface side of the insulating substrate, and the first main surface of the insulating substrate and the A conductive portion forming step of forming a conductive portion that conducts with the second main surface; and a conductive portion conductor that is connected to the conductive portion by etching the conductive layer formed on the second main surface of the insulating substrate. An etching step of forming a pattern, and in the conductive portion forming step, a portion exposed to the first main surface side of the conductive portion is directed from the first main surface side of the insulating substrate to the outside. It is configured so that it can be wire-bonded to a light-emitting element mounted to emit light. Method for manufacturing a light-emitting element mounting wiring substrate is provided.

本発明の第14の態様によれば、前記絶縁基板の前記第1主面側から前記第2主面側に向かって内径が小さくなるように前記絶縁基板を貫通させ、前記発光素子を収容可能に構成される収容穴を前記絶縁基板に形成する収容穴形成工程を有し、前記エッチング工程では、前記絶縁基板の前記第2主面上に形成した前記導体層をエッチングして、前記収容穴から前記第1主面側へ向かって一部が露出し、露出部分に前記発光素子を搭載可能なように搭載用導体パターンを形成し、前記収容穴形成工程は、少なくとも前記導電部形成工程よりも後に行う第13の態様に記載の発光素子搭載用配線基板の製造方法が提供される。   According to the fourteenth aspect of the present invention, the insulating substrate can be penetrated so that the inner diameter decreases from the first main surface side to the second main surface side of the insulating substrate, and the light emitting element can be accommodated. A housing hole forming step for forming a housing hole formed in the insulating substrate, and in the etching step, the conductor layer formed on the second main surface of the insulating substrate is etched to form the housing hole. A part of the conductive pattern for mounting is formed so that the light emitting element can be mounted on the exposed part, and the accommodating hole forming step is at least from the conductive part forming step. A method for manufacturing a wiring board for mounting a light emitting element according to a thirteenth aspect is also provided.

本発明によれば、絶縁基板の発光素子搭載面側からの光の反射量を高め、良好な反射特性とすることが可能となる。   According to the present invention, it is possible to increase the amount of reflection of light from the light emitting element mounting surface side of the insulating substrate and to achieve good reflection characteristics.

本発明の第1実施形態に係る発光素子搭載用配線基板の一部を示す図であって、(a)は発光素子搭載用配線基板の第1主面側の上面図であり、(b)は発光素子搭載用配線基板の第2主面側の上面図であり、(c)は(a)のA−A断面図である。It is a figure which shows a part of wiring board for light emitting element mounting which concerns on 1st Embodiment of this invention, (a) is a top view by the side of the 1st main surface of the wiring board for light emitting element mounting, (b) FIG. 3 is a top view of the second main surface side of the light emitting element mounting wiring board, and FIG. 3C is a cross-sectional view taken along line AA of FIG. 本発明の第1実施形態に係る発光装置の一部を示す図であって、図1(a)のA−A断面と同方向側の断面図である。It is a figure which shows a part of light-emitting device which concerns on 1st Embodiment of this invention, Comprising: It is sectional drawing of the same direction side as the AA cross section of Fig.1 (a). 本発明の第1実施形態に係る発光素子搭載用配線基板の製造方法の各工程を、図1(a)のA−A断面と同方向側の断面図で示す工程図である。It is process drawing which shows each process of the manufacturing method of the wiring board for light emitting element mounting concerning 1st Embodiment of this invention with sectional drawing of the same direction side as the AA cross section of Fig.1 (a). 本発明の第2実施形態に係る発光装置の一部を示す断面図である。It is sectional drawing which shows a part of light-emitting device which concerns on 2nd Embodiment of this invention.

<本発明の第1実施形態> <First Embodiment of the Present Invention>

(1)発光素子搭載用配線基板の構造
まずは、本発明の第1実施形態に係る発光素子搭載用配線基板の構造について、図1を用いて説明する。図1は、本実施形態に係る発光素子搭載用配線基板の一部を示す図であって、(a)は発光素子搭載用配線基板の第1主面側の上面図であり、(b)は発光素子搭載用配線基板の第2主面側の上面図であり、(c)は(a)のA−A断面図である。
(1) Structure of Light Emitting Element Mounting Wiring Board First, the structure of the light emitting element mounting wiring board according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a view showing a part of a wiring board for mounting a light emitting element according to the present embodiment, in which (a) is a top view on the first main surface side of the wiring board for mounting a light emitting element. FIG. 3 is a top view of the second main surface side of the light emitting element mounting wiring board, and FIG. 3C is a cross-sectional view taken along line AA of FIG.

図1(a)に示すように、発光素子搭載用配線基板は、例えば450nm付近にピーク波長を有する発光素子としての青色LEDチップ100を、絶縁基板10の第1主面10a側に搭載可能に構成されている。   As shown in FIG. 1A, the light emitting element mounting wiring board can mount, for example, a blue LED chip 100 as a light emitting element having a peak wavelength in the vicinity of 450 nm on the first main surface 10a side of the insulating substrate 10. It is configured.

具体的には、発光素子搭載用配線基板は、図1(c)に示すように、第1主面10a側が光反射面12aとなっている絶縁基板10を有する。すなわち、絶縁基板10は、例えば第2主面10b側に配置される基材11と、第1主面10a側に配置され、絶縁基板10の光反射面12aを構成する白色絶縁材12とを有している。また、絶縁基板10は、第2主面10b側、つまり、基材11の白色絶縁材12とは反対側の面上に、接着材13を有している。   Specifically, as shown in FIG. 1C, the light emitting element mounting wiring board includes an insulating substrate 10 having a light reflecting surface 12a on the first main surface 10a side. That is, the insulating substrate 10 includes, for example, a base material 11 arranged on the second main surface 10b side and a white insulating material 12 arranged on the first main surface 10a side and constituting the light reflecting surface 12a of the insulating substrate 10. Have. The insulating substrate 10 has an adhesive 13 on the second main surface 10b side, that is, on the surface of the base 11 opposite to the white insulating material 12.

基材11は、可撓性を有する樹脂、例えば厚さが4μm以上75μm以下の、ポリイミド(PI)、ポリアミドイミド(PAI)、ポリエチレンナフタレート(PEN)、エポキシ、アラミド等のいずれかの樹脂からなり、絶縁基板10は、例えば曲率半径が50mm以下に折り曲げ可能に構成されている。白色絶縁材12は、例えば後に搭載される青色LEDチップ100のピーク波長と略同一の、波長が450nmの光に対して80%以上の全反射率を有する白色系の反射塗膜等である。ここで、全反射率とは、正反射率(鏡面反射率)と拡散反射率(様々な方向に反射された光の反射率)との合計である。接着材13は、例えば熱硬化性のエポキシ系接着材等であり、TAB(Tape Automated Bonding)テープ用又はフレキシブル配線基板用の接着材や、カバーレイ用接着材等を用いることができる。   The substrate 11 is made of a flexible resin, for example, any resin such as polyimide (PI), polyamideimide (PAI), polyethylene naphthalate (PEN), epoxy, or aramid having a thickness of 4 μm to 75 μm. Thus, the insulating substrate 10 is configured to be bendable to a radius of curvature of 50 mm or less, for example. The white insulating material 12 is, for example, a white-based reflective coating film having a total reflectance of 80% or more with respect to light having a wavelength of 450 nm, which is substantially the same as the peak wavelength of the blue LED chip 100 to be mounted later. Here, the total reflectance is the sum of regular reflectance (specular reflectance) and diffuse reflectance (reflectance of light reflected in various directions). The adhesive 13 is, for example, a thermosetting epoxy adhesive or the like, and an adhesive for a TAB (Tape Automated Bonding) tape or a flexible wiring board, an adhesive for a coverlay, or the like can be used.

このように、青色LEDチップ100が搭載される第1主面10a側に光反射面12aを設けたので、青色LEDチップ100から発せられ、乱反射した光等を、効率よく第1主面10a側から外部に向けて反射させることができる。   As described above, since the light reflecting surface 12a is provided on the first main surface 10a side on which the blue LED chip 100 is mounted, the light that is emitted from the blue LED chip 100 and irregularly reflected is efficiently reflected on the first main surface 10a side. Can be reflected from the outside.

また、発光素子搭載用配線基板は、絶縁基板10を貫通するように形成され、絶縁基板10の第1主面10aと第2主面10bとを導通させる導電部20vを有している。導電部20vは、例えば電気メッキ等で形成された銅(Cu)メッキ等の導電材からなる。図1(c)に示すように、導電部20vの、絶縁基板10の第1主面10a側に露出した部分は、例えば絶縁基板10の第1主面10aと高さを揃えて形成されている。導電部20vの第1主面10a側に露出した部分は、後に搭載される青色LEDチップ100が有する図示しない表面電極等と、ワイヤ110によりワイヤボンディング接続可能に構成されている。   Further, the light emitting element mounting wiring board is formed so as to penetrate the insulating substrate 10 and has a conductive portion 20v that conducts the first main surface 10a and the second main surface 10b of the insulating substrate 10. The conductive portion 20v is made of a conductive material such as copper (Cu) plating formed by, for example, electroplating. As shown in FIG. 1C, a portion of the conductive portion 20v exposed on the first main surface 10a side of the insulating substrate 10 is formed to have the same height as the first main surface 10a of the insulating substrate 10, for example. Yes. The portion exposed to the first main surface 10a side of the conductive portion 20v is configured to be wire-bonded by a wire 110 and a surface electrode (not shown) included in the blue LED chip 100 to be mounted later.

また、発光素子搭載用配線基板は、絶縁基板10の第1主面10a側から第2主面10b側に向かって内径が小さくなるように絶縁基板10を貫通し、青色LEDチップ100を収容可能に構成される収容穴50hを有する。すなわち、収容穴50hは、例えばテーパ形状を有し、導電部20vにワイヤボンディング接続される青色LEDチップ100を収容穴50h内に収容可能に構成されている。収容穴50hのテーパ角、すなわち、絶縁基板10の第2主面10bと収容穴50hの側壁面50wとに挟まれる角度は、例えば90°未満となっている。また、収容穴50hの側壁面50wには、反射塗膜52が形成されている。反射塗膜52は、白色系の樹脂等であり、例えばエポキシ、アクリル、シリコーン等のいずれかの樹脂を含む熱硬化型の白色系ソルダレジスト等を用いることができる
Further, the light emitting element mounting wiring board can pass through the insulating substrate 10 so that the inner diameter decreases from the first main surface 10 a side to the second main surface 10 b side of the insulating substrate 10, and can accommodate the blue LED chip 100. The housing hole 50h is configured as follows. That is, the accommodation hole 50h has a tapered shape, for example, and is configured to accommodate the blue LED chip 100 connected to the conductive portion 20v by wire bonding in the accommodation hole 50h. The taper angle of the accommodation hole 50h, that is, the angle between the second main surface 10b of the insulating substrate 10 and the side wall surface 50w of the accommodation hole 50h is, for example, less than 90 °. In addition, a reflective coating 52 is formed on the side wall surface 50w of the accommodation hole 50h. The reflective coating 52 is a white resin or the like, and for example, a thermosetting white solder resist or the like containing any resin such as epoxy, acrylic, or silicone can be used.

このように、青色LEDチップ100が収容可能に構成される収容穴50hをテーパ形状とし、光の反射量の少ない基材11や接着材13で構成される側壁面50wに反射塗膜52を形成したので、青色LEDチップ100から横方向或いは下方へと発せられた光等を、いっそう効率よく第1主面10a側から外部に向けて反射させることができる。   In this way, the accommodation hole 50h configured to accommodate the blue LED chip 100 is tapered, and the reflective coating film 52 is formed on the side wall surface 50w composed of the base material 11 and the adhesive 13 with a small amount of light reflection. Therefore, the light etc. emitted from the blue LED chip 100 in the lateral direction or downward can be more efficiently reflected from the first main surface 10a side to the outside.

また、発光素子搭載用配線基板は、絶縁基板10の第2主面10b上に形成され、導電部20vと接続する導電部用導体パターン31pを有する。また、発光素子搭載用配線基板は、収容穴50hから第1主面10a側へ向かって一部が露出するように絶縁基板10の第2主面10b上に形成され、露出部分に青色LEDチップ100を搭載可能に構成される搭載用導体パターン32pを有する。   Further, the light emitting element mounting wiring board has a conductive part conductive pattern 31p formed on the second main surface 10b of the insulating substrate 10 and connected to the conductive part 20v. The light emitting element mounting wiring board is formed on the second main surface 10b of the insulating substrate 10 so that a part thereof is exposed from the accommodation hole 50h toward the first main surface 10a, and the blue LED chip is formed on the exposed portion. The mounting conductor pattern 32p is configured so that 100 can be mounted.

具体的には、導電部用導体パターン31p及び搭載用導体パターン32pは、例えば18μm以上70μm以下の厚さで、絶縁基板10の第2主面10b上に形成されている。導電部用導体パターン31pは、導電部20bと接続され、例えば後に搭載される青色LEDチップ100に電力を供給する配線として構成されている。搭載用導体パターン32pは、収容穴50hから露出した部分に青色LEDチップ100を搭載し、青色LEDチップ100が有する図示しない裏面電極等とダイボンディング接続可能な配線として構成されている。また、搭載用導体パターン32pは、青色LEDチップ100の駆動時に生じる熱を放散させる機能を有する。これにより、放熱特性に優れた発光素子搭載用配線基板とすることができる。   Specifically, the conductive portion conductor pattern 31p and the mounting conductor pattern 32p are formed on the second main surface 10b of the insulating substrate 10 with a thickness of, for example, 18 μm or more and 70 μm or less. The conductive part conductor pattern 31p is connected to the conductive part 20b and is configured as a wiring for supplying power to, for example, a blue LED chip 100 to be mounted later. The mounting conductor pattern 32p is configured as a wiring in which the blue LED chip 100 is mounted on a portion exposed from the accommodation hole 50h and can be die-bonded to a back electrode or the like (not shown) of the blue LED chip 100. The mounting conductor pattern 32p has a function of radiating heat generated when the blue LED chip 100 is driven. Thereby, it can be set as the wiring board for light emitting element mounting excellent in the thermal radiation characteristic.

図1(b)に、導電部20bの導電部用導体パターン31pとの接続位置、及び青色LEDチップ100の搭載用導体パターン32pへの搭載位置を、それぞれ破線にて示す。   In FIG. 1B, the connection position of the conductive part 20b with the conductive part conductor pattern 31p and the mounting position of the blue LED chip 100 on the mounting conductive pattern 32p are indicated by broken lines.

また、少なくとも搭載用導体パターン32pの収容穴50hから露出した部分、および導電部20vの上面、つまり、第1主面10a側に露出した部分には、例えば金(Au)、銀(Ag)、パラジウム(Pd)、ニッケル(Ni)、錫(Sn)等のいずれかの元素を含む図示しないメッキが施されている。また、好ましくは、導電部用導体パターン31p及び搭載用導体パターン32pの上記以外の露出した表面の略全面にも、係るメッキが施されている。   Further, at least a portion exposed from the accommodation hole 50h of the mounting conductor pattern 32p and a top surface of the conductive portion 20v, that is, a portion exposed on the first main surface 10a side, for example, gold (Au), silver (Ag), Plating (not shown) containing any element such as palladium (Pd), nickel (Ni), tin (Sn) is applied. Preferably, the plating is also applied to substantially the entire exposed surface of the conductive portion conductor pattern 31p and the mounting conductor pattern 32p other than those described above.

このように、本実施形態では、青色LEDチップ100が搭載される第1主面10a側には、主に導電部20vの上面を露出させるのみとし、青色LEDチップ100の搭載面とは反対側の第2主面10b上に、導体パターン31p,32pを設けている。これにより、光反射面12aでの光の反射が導体パターン31p,32pにより妨げられることを抑制することができる。また、第1主面10a側に露出させる導電部20vの直径を、青色LEDチップ100とワイヤボンディング接続可能な程度に調整することで、導電部20vの露出面積を低減させることができる。したがって、搭載面に設けた光反射面12aの露出面積を大きくとることができる。以上により、青色LEDチップ100の搭載面である第1主面10a側からの光の反射量を高め、良好な反射特性とすることができる。   As described above, in the present embodiment, only the upper surface of the conductive portion 20v is mainly exposed on the first main surface 10a side on which the blue LED chip 100 is mounted, and is opposite to the mounting surface of the blue LED chip 100. Conductive patterns 31p and 32p are provided on the second main surface 10b. Thereby, it can suppress that reflection of the light in the light reflection surface 12a is prevented by the conductor patterns 31p and 32p. Further, the exposed area of the conductive portion 20v can be reduced by adjusting the diameter of the conductive portion 20v exposed to the first main surface 10a side to such an extent that it can be connected to the blue LED chip 100 by wire bonding. Therefore, the exposed area of the light reflecting surface 12a provided on the mounting surface can be increased. As described above, the reflection amount of light from the first main surface 10a side, which is the mounting surface of the blue LED chip 100, can be increased, and favorable reflection characteristics can be obtained.

また、絶縁基板の表面及び裏面に配線パターンが形成された、上述の従来例に係る発光装置のように、発光素子搭載用配線基板を両面配線基板とする場合に比べ、本実施形態に係る発光素子搭載用配線基板は、片面配線基板として構成されており、低コスト化を図るうえで有利である。   In addition, the light emission according to the present embodiment is compared with the case where the light emitting element mounting wiring board is a double-sided wiring board as in the above-described conventional light emitting device in which wiring patterns are formed on the front and back surfaces of the insulating board. The element mounting wiring board is configured as a single-sided wiring board, which is advantageous for cost reduction.

また、本実施形態では、第1主面10a側への導体パターン31p,32pや導電部20vの露出面積を抑えつつ、少なくとも第1主面10a側に露出した搭載用導体パターン
32pや導電部20vにはメッキを施して、反射量をさらに高めている。特に、搭載用導体パターン32pの露出部分にメッキを施すことで、青色LEDチップ100から下方へと発せられた光等を、いっそう効率よく第1主面10a側から外部に向けて反射させることができる。
In the present embodiment, the mounting conductor pattern 32p and the conductive portion 20v exposed at least on the first main surface 10a side are suppressed while suppressing the exposed area of the conductor patterns 31p and 32p and the conductive portion 20v on the first main surface 10a side. Has been plated to further increase the amount of reflection. In particular, by plating the exposed portion of the mounting conductor pattern 32p, it is possible to more efficiently reflect the light emitted downward from the blue LED chip 100 toward the outside from the first main surface 10a side. it can.

(2)発光装置の構造
次に、本発明の第1実施形態に係る発光装置の構造について、図2を用いて説明する。図2は、本発明の第1実施形態に係る発光装置の一部を示す図であって、図1(a)のA−A断面と同方向側の断面図である。
(2) Structure of Light Emitting Device Next, the structure of the light emitting device according to the first embodiment of the present invention will be described with reference to FIG. FIG. 2 is a view showing a part of the light emitting device according to the first embodiment of the present invention, and is a cross-sectional view on the same direction side as the AA cross section of FIG.

図2に示すように、発光装置は、図1の発光素子搭載用配線基板に、例えば450nm付近にピーク波長を有する発光素子としての青色LEDチップ100が搭載されたLEDモジュールとして構成されている。具体的には、導電部20vの、絶縁基板10の第1主面10a側に露出した部分には、青色LEDチップ100の図示しない表面電極等が、ワイヤ110によりワイヤボンディング接続されている。また、導電部20vに接続され、収容穴50hに収容された青色LEDチップ100は、搭載用導体パターン32pの露出部分に搭載され、封止材120により収容穴50h内に封止されている。   As shown in FIG. 2, the light-emitting device is configured as an LED module in which a blue LED chip 100 as a light-emitting element having a peak wavelength near 450 nm, for example, is mounted on the light-emitting element mounting wiring board of FIG. Specifically, a surface electrode or the like (not shown) of the blue LED chip 100 is wire-bonded and connected by a wire 110 to a portion of the conductive portion 20v exposed on the first main surface 10a side of the insulating substrate 10. The blue LED chip 100 connected to the conductive portion 20v and accommodated in the accommodation hole 50h is mounted on the exposed portion of the mounting conductor pattern 32p, and is sealed in the accommodation hole 50h by the sealing material 120.

また、搭載用導体パターン32pに搭載された青色LEDチップ100の図示しない裏面電極等は、例えば導電性材料としての銀(Ag)ペースト105を介して、搭載用導体パターン32pにダイボンディング接続されている。   Further, a back electrode or the like (not shown) of the blue LED chip 100 mounted on the mounting conductor pattern 32p is die-bonded to the mounting conductor pattern 32p via, for example, silver (Ag) paste 105 as a conductive material. Yes.

封止材120は、例えば蛍光体樹脂121及びパッケージ封止樹脂122から構成される。蛍光体樹脂121には、ピーク波長を450nm付近とする青色LEDチップ100が発する青色光を、白色光に波長変換する蛍光体が混入されている。これにより、青色LEDチップ100は、搭載面である絶縁基板10の第1主面10a側から外部に向けて白色光を発するように構成されている。なお、封止材120は、1つの収容穴50hごとに設けられていてもよく、複数の収容穴50hごとに設けられていてもよい。また、蛍光体樹脂とパッケージ封止樹脂とを兼用する封止材を用いることも可能である。   The sealing material 120 is composed of, for example, a phosphor resin 121 and a package sealing resin 122. The phosphor resin 121 is mixed with a phosphor that converts the blue light emitted from the blue LED chip 100 having a peak wavelength near 450 nm into white light. Thereby, the blue LED chip 100 is configured to emit white light outward from the first main surface 10a side of the insulating substrate 10 which is the mounting surface. In addition, the sealing material 120 may be provided for every one accommodation hole 50h, and may be provided for each of the plurality of accommodation holes 50h. It is also possible to use a sealing material that combines the phosphor resin and the package sealing resin.

なお、本実施形態に係る発光装置を、青色LEDチップ100が搭載された収容穴50hを1個又は複数個含むように発光素子搭載用配線基板を個片化したLEDパッケージとすることも可能である。   Note that the light emitting device according to the present embodiment may be an LED package in which the light emitting element mounting wiring substrate is separated into pieces so as to include one or a plurality of receiving holes 50h in which the blue LED chip 100 is mounted. is there.

(3)発光素子搭載用配線基板の製造方法
次に、本発明の第1実施形態に係る発光素子搭載用配線基板の製造方法について、図3を用いて説明する。図3は、本実施形態に係る発光素子搭載用配線基板の製造方法の各工程を、図1(a)のA−A断面と同方向側の断面図で示す工程図である。以下に説明する発光素子搭載用配線基板の製造工程には、例えばTABテープ向けの製造工程が適用される。
(3) Manufacturing Method of Light Emitting Element Mounting Wiring Substrate Next, a manufacturing method of the light emitting element mounting wiring substrate according to the first embodiment of the present invention will be described with reference to FIG. FIG. 3 is a process diagram showing each process of the method for manufacturing the light emitting element mounting wiring board according to the present embodiment in a cross-sectional view on the same direction side as the AA cross section of FIG. For example, a manufacturing process for a TAB tape is applied to the manufacturing process of the wiring board for mounting a light emitting element described below.

(貫通孔形成工程)
まず、図3(a)に示すように、第2主面10b側に配置される基材11と、第1主面10a側に配置され、絶縁基板10の光反射面12aを構成する白色絶縁材12とを有する絶縁基板10を用意する。また、絶縁基板10は、第2主面10b側、つまり、基材11の白色絶縁材12とは反対側の面上に、接着材13を有している。このような絶縁基板10は、例えば白色系反射塗膜等の白色絶縁材12を基材11にコートし、接着材13をラミネート加工又は塗工して製造することができる。
(Through hole forming process)
First, as shown in FIG. 3A, the base material 11 disposed on the second main surface 10b side and the white insulation that is disposed on the first main surface 10a side and constitutes the light reflecting surface 12a of the insulating substrate 10. An insulating substrate 10 having a material 12 is prepared. The insulating substrate 10 has an adhesive 13 on the second main surface 10b side, that is, on the surface of the base 11 opposite to the white insulating material 12. Such an insulating substrate 10 can be manufactured by coating a base material 11 with a white insulating material 12 such as a white reflective coating film and laminating or coating an adhesive material 13.

より具体的には、絶縁基板10として、三井化学製や東洋紡製の白色コートされたポリ
イミドフィルム等が使用可能である。このような市販品は、例えばTABテープの製造工程を流用できるよう、ロール形態での作業が可能な幅に裁断(スリット)して用いることができる。また、接着材13としては、巴川製紙所、東レ、有沢製作所等の各メーカーの製品を用いてもよい。
More specifically, a white coated polyimide film manufactured by Mitsui Chemicals or Toyobo can be used as the insulating substrate 10. Such a commercially available product can be used after being cut (slit) into a width capable of working in a roll form so that, for example, the manufacturing process of the TAB tape can be used. Moreover, as the adhesive material 13, you may use the product of each manufacturer, such as the Yodogawa paper mill, Toray, and Arisawa mill.

次に、図3(b)に示すように、第1主面10a側が光反射面12aとなっている絶縁基板10に、貫通孔20hを形成する。貫通孔20hには、後に導電材が充填されて導電部20vが形成される。係る貫通孔20hは、例えばプレス加工等で形成することができ、その際に貫通孔20hの開口径を調整することで、後に形成される導電部20vの第1主面10a側の露出面積を調整することができる。なお、貫通孔20hを形成する際、絶縁基板10の搬送用のスプロケットホールやアライメント用ホール(いずれも図示せず)を共に形成してもよい。   Next, as shown in FIG. 3B, a through hole 20h is formed in the insulating substrate 10 having the light reflecting surface 12a on the first main surface 10a side. The through hole 20h is later filled with a conductive material to form a conductive portion 20v. The through hole 20h can be formed by, for example, press working, and by adjusting the opening diameter of the through hole 20h at that time, the exposed area on the first main surface 10a side of the conductive portion 20v to be formed later is adjusted. Can be adjusted. When forming the through hole 20h, a sprocket hole for transporting the insulating substrate 10 and an alignment hole (both not shown) may be formed together.

(導体層形成工程)
次に、図3(c)に示すように、絶縁基板10の第2主面10b上に、貫通孔20hを覆うように導体層としての銅箔30を形成する。このとき、例えば厚さが18μm以上70μm以下の銅箔30を使用し、例えば常圧又は減圧環境下のロールラミネータを用いたラミネート等により絶縁基板10に貼り合せることができる。ラミネート終了後、例えば150℃以上の温度で接着材13のポストキュアを行う。ラミネートやポストキュアの条件は、接着材メーカーの推奨値を基準に選定可能である。
(Conductor layer forming process)
Next, as shown in FIG. 3C, a copper foil 30 as a conductor layer is formed on the second main surface 10b of the insulating substrate 10 so as to cover the through hole 20h. At this time, for example, a copper foil 30 having a thickness of 18 μm or more and 70 μm or less can be used and bonded to the insulating substrate 10 by, for example, laminating using a roll laminator under a normal pressure or reduced pressure environment. After the lamination is completed, the adhesive 13 is post-cured at a temperature of 150 ° C. or higher, for example. Lamination and post-cure conditions can be selected based on the recommended values of the adhesive manufacturer.

なお、接着材を用いず、熱圧着により銅箔30を貼り合せたり、導電材を直接的に絶縁基板に成膜したりして、導体層を形成してもよい。   Note that the conductor layer may be formed by bonding the copper foil 30 by thermocompression bonding without using an adhesive, or by directly forming a conductive material on the insulating substrate.

(導電部形成工程)
続いて、図3(d)に示すように、絶縁基板10の第1主面10a側から貫通孔20hに銅(Cu)などの導電材を充填し、絶縁基板10の第1主面10aと第2主面10bとを導通させる導電部20vを形成する。導電部20vを構成する導電材は、例えば電気銅メッキ等で貫通孔20h内に埋め込みメッキする。この際、第2主面10b側の銅箔30の表面を、図示しないメッキ用マスキングテープ等でマスキングする。
(Conductive part formation process)
3D, the through hole 20h is filled with a conductive material such as copper (Cu) from the first main surface 10a side of the insulating substrate 10, and the first main surface 10a of the insulating substrate 10 and A conductive portion 20v is formed that is electrically connected to the second major surface 10b. The conductive material constituting the conductive portion 20v is embedded and plated in the through hole 20h by, for example, electrolytic copper plating. At this time, the surface of the copper foil 30 on the second main surface 10b side is masked with a masking tape for plating (not shown).

絶縁基板10の第1主面10a側の導電部20vの高さは、例えばメッキ時間等のメッキ条件によって調整することができ、図3(d)に示すように、例えば絶縁基板10の第1主面10aと高さを揃えて形成することができる。これにより、導電部20vの第1主面10a側に露出した部分を、後に搭載される青色LEDチップ100(図1(a)を参照)とワイヤボンディング接続可能に構成する。   The height of the conductive portion 20v on the first main surface 10a side of the insulating substrate 10 can be adjusted by, for example, plating conditions such as plating time. For example, as shown in FIG. The main surface 10a and the height can be aligned. Thereby, the part exposed to the 1st main surface 10a side of the electroconductive part 20v is comprised so that wire bonding connection can be carried out with the blue LED chip 100 (refer Fig.1 (a)) mounted later.

なお、埋め込みメッキの具体的な手法については、例えば特開2003−124264号公報などに開示される手法を用いることができる。また、電気銅メッキには、例えばエバラユージライト製やアトテック製の銅メッキ液を使用することができ、銅メッキ液の使用方法についても、メーカーからの推奨値を基準とすることができる。   As a specific technique for the embedded plating, for example, a technique disclosed in Japanese Patent Application Laid-Open No. 2003-124264 can be used. In addition, for example, Ebara Eugelite or Atotech copper plating solution can be used for the electrolytic copper plating, and the method of using the copper plating solution can also be based on the recommended value from the manufacturer.

電気銅メッキ終了後、銅箔30から図示しないマスキングテープを剥離する。   After the completion of the electrolytic copper plating, a masking tape (not shown) is peeled off from the copper foil 30.

(エッチング工程)
次に、図3(e)に示すように、絶縁基板10の第2主面10b上に形成した導体層30の上に、例えばエッチング用レジストを塗工し、露光・現像してレジストパターン40pを形成する。このとき、エッチング用レジストの代わりにドライフィルム等を用いてもよい。
(Etching process)
Next, as shown in FIG. 3E, for example, a resist for etching is applied on the conductor layer 30 formed on the second main surface 10b of the insulating substrate 10, and then exposed and developed to form a resist pattern 40p. Form. At this time, a dry film or the like may be used instead of the etching resist.

続いて、図3(f)に示すように、レジストパターン40pをマスクとして、絶縁基板10の第2主面10b上に形成した導体層30をエッチングして、導電部20vと接続する導電部用導体パターン31pを形成する。また、後に形成される収容穴50hから第1主面10a側へ向かって一部が露出する位置に、搭載用導体パターン32pを形成する。この際、第1主面10a上に図示しないマスキングテープ等を貼付し、導電部20vの第1主面10a側の上面をマスキングする。或いは、導電部20vの上面に裏止め材を塗工してもよい。   Subsequently, as shown in FIG. 3F, the conductive layer 30 formed on the second main surface 10b of the insulating substrate 10 is etched using the resist pattern 40p as a mask to connect the conductive portion 20v. Conductive pattern 31p is formed. Further, the mounting conductor pattern 32p is formed at a position where a part is exposed from the accommodation hole 50h formed later toward the first main surface 10a side. At this time, a masking tape or the like (not shown) is pasted on the first main surface 10a to mask the upper surface of the conductive portion 20v on the first main surface 10a side. Alternatively, a backing material may be applied to the upper surface of the conductive portion 20v.

エッチング終了後、レジストパターン40p及びマスキングテープを剥離する。   After the etching is completed, the resist pattern 40p and the masking tape are peeled off.

(収容穴形成工程)
次に、図3(g)に示すように、絶縁基板10の第1主面10a側から第2主面10b側に向かって内径が小さくなるように絶縁基板10を貫通させ、青色LEDチップ100を収容可能に構成される収容穴50hを絶縁基板10に形成する。収容穴50hのこのようなテーパ形状は、例えばレーザ加工により絶縁基板10を貫通させることで得られる。レーザ加工を用いることで、収容穴50hのテーパ角を例えば90°未満とするなど、テーパ形状の制御が容易となる。また、レーザ加工後はスミア除去を行うことが好ましい。
(Housing hole forming process)
Next, as shown in FIG. 3G, the insulating substrate 10 is penetrated so that the inner diameter decreases from the first main surface 10a side to the second main surface 10b side of the insulating substrate 10, and the blue LED chip 100 is inserted. The insulating substrate 10 is formed with a receiving hole 50h configured so as to be able to receive the substrate. Such a tapered shape of the accommodation hole 50h can be obtained by, for example, penetrating the insulating substrate 10 by laser processing. By using laser processing, it is easy to control the taper shape, for example, the taper angle of the accommodation hole 50h is less than 90 °, for example. Moreover, it is preferable to remove smear after laser processing.

このように収容穴50hを形成することで、搭載用導体パターン32pの一部が収容穴50hから第1主面10a側へ向かって露出し、露出部分に青色LEDチップ100を搭載可能となる。   By forming the accommodation hole 50h in this manner, a part of the mounting conductor pattern 32p is exposed from the accommodation hole 50h toward the first main surface 10a, and the blue LED chip 100 can be mounted on the exposed portion.

また、収容穴形成工程を、少なくとも導電部形成工程よりも後に行うことで、形成した収容穴50hに導電材が充填されてしまうことがない。   Further, by performing the accommodation hole forming step at least after the conductive portion forming step, the formed accommodation hole 50h is not filled with the conductive material.

(反射塗膜形成工程)
次に、図3(h)に示すように、収容穴50の側壁面50wに反射塗膜52を形成する。すなわち、熱硬化型の白色系ソルダレジスト等から構成される反射塗膜52を、例えばスクリーン印刷等により、収容穴50hの側壁面50w上方の開口部付近をドーナツ状に取り巻くように塗布する。側壁面50w上方に塗布された反射塗膜52は、自重により側壁面50hに沿って収容穴50hの穴底へ向かって流れ込むことで側壁面50hに塗工される。このとき、収容穴50hの穴底が反射塗膜52によって塞がれてしまうことのないよう、反射塗膜52の塗布量を調整する。その後、反射塗膜52を加熱して、熱により硬化させる。
(Reflection coating formation process)
Next, as shown in FIG. 3 (h), a reflective coating 52 is formed on the side wall surface 50 w of the accommodation hole 50. That is, the reflective coating film 52 composed of a thermosetting white solder resist or the like is applied by, for example, screen printing or the like so as to surround the vicinity of the opening above the side wall surface 50w of the accommodation hole 50h in a donut shape. The reflective coating 52 applied to the upper side of the side wall surface 50w is applied to the side wall surface 50h by flowing toward the bottom of the accommodation hole 50h along the side wall surface 50h by its own weight. At this time, the coating amount of the reflective coating 52 is adjusted so that the hole bottom of the accommodation hole 50 h is not blocked by the reflective coating 52. Thereafter, the reflective coating film 52 is heated and cured by heat.

(メッキ形成工程)
次に、少なくとも搭載用導体パターン32pの収容穴50hから露出した部分及び導電部20vの第1主面10a側に露出した部分に、メッキを施す(図示せず)。好ましくは、導電部用導体パターン31p及び搭載用導体パターン32pの上記以外の露出した表面の略全面にも、係るメッキを施す。なお、メッキ形成工程を、反射塗膜形成工程の前に実施してもよい。
(Plating formation process)
Next, plating is performed on at least a portion exposed from the accommodation hole 50h of the mounting conductor pattern 32p and a portion exposed to the first main surface 10a side of the conductive portion 20v (not shown). Preferably, the plating is also applied to substantially the entire exposed surface of the conductive pattern 31p for the conductive portion and the mounting conductive pattern 32p other than the above. In addition, you may implement a plating formation process before a reflective coating film formation process.

以上により、本実施形態に係る発光素子搭載用配線基板が形成される。   Thus, the light emitting element mounting wiring board according to the present embodiment is formed.

(4)発光装置の製造方法
次に、本発明の第1実施形態に係る発光装置の製造方法について、図1を参照して説明する。
(4) Method for Manufacturing Light-Emitting Device Next, a method for manufacturing a light-emitting device according to the first embodiment of the present invention will be described with reference to FIG.

(ダイボンディング工程)
まずは、例えば450nm付近にピーク波長を有する発光素子としての青色LEDチッ
プ100を、ウエハリング又はウエハトレイに搭載された、ウエハダイシング後の状態で用意する。この青色LEDチップ100を、LED用ダイボンダ等を用い、例えば銀(Ag)ペースト105等を介して搭載用導体パターン32pの露出部分にダイボンディングする。その後、銀(Ag)ペースト105等のダイボンディング材を、例えばダイボンディング材メーカーの推奨値にしたがい、150℃で1時間ほど加熱キュアする。
(Die bonding process)
First, for example, a blue LED chip 100 as a light emitting element having a peak wavelength near 450 nm is prepared in a state after wafer dicing mounted on a wafer ring or a wafer tray. This blue LED chip 100 is die-bonded to an exposed portion of the mounting conductor pattern 32p using, for example, a silver (Ag) paste 105 or the like using an LED die bonder or the like. Thereafter, a die bonding material such as silver (Ag) paste 105 is heated and cured at 150 ° C. for about one hour in accordance with a value recommended by the die bonding material manufacturer, for example.

(クリーニング工程)
上記のように、ダイボンディング材を加熱キュアすると、発生したデガスにより、青色LEDチップ100の備える図示しない表面電極等のボンディングパッドが汚染される場合がある。そこで、例えば減圧環境下で、アルゴン(Ar)ガス及び酸素(O)ガス等の混合ガスを用いて、汚染されたボンディングパッド等のプラズマクリーニングを行う。
(Cleaning process)
As described above, when the die bonding material is cured by heating, the generated degas may contaminate bonding pads such as surface electrodes (not shown) included in the blue LED chip 100. Therefore, for example, under a reduced pressure environment, plasma cleaning of a contaminated bonding pad or the like is performed using a mixed gas such as argon (Ar) gas and oxygen (O 2 ) gas.

(ワイヤボンディング工程)
次に、LED用ワイヤボンダ等を用い、導電部20vの、絶縁基板10の第1主面10a側に露出した部分に、青色LEDチップ100をワイヤボンディング接続する。具体的には、青色LEDチップ100が備える図示しない表面電極上に、ワイヤでバンプを形成する。次に、発光素子搭載用配線基板の導電部20vに、第1ボンディングを行う。さらに、青色LEDチップ100のバンプに第2ボンディングを行う。これにより、温度サイクル試験の耐性が高い、ワイヤボンディング接続を得ることができる。
(Wire bonding process)
Next, using a wire bonder for LED or the like, the blue LED chip 100 is wire-bonded and connected to a portion of the conductive portion 20v exposed on the first main surface 10a side of the insulating substrate 10. Specifically, bumps are formed on the surface electrodes (not shown) included in the blue LED chip 100 with wires. Next, first bonding is performed on the conductive portion 20v of the light emitting element mounting wiring board. Further, second bonding is performed on the bumps of the blue LED chip 100. Thereby, the wire bonding connection with high tolerance of a temperature cycle test can be obtained.

(封止工程)
続いて、青色LEDチップ100を、封止材120により収容穴50h内に封止する。つまり、まずは、収容穴50h内に蛍光体樹脂121を塗工する。収容穴50h内に蛍光体樹脂121を塗工することで、蛍光体樹脂121の流れ出しを抑制することができ、また、塗工膜厚の制御が容易となる。
(Sealing process)
Subsequently, the blue LED chip 100 is sealed in the accommodation hole 50 h by the sealing material 120. That is, first, the phosphor resin 121 is applied in the accommodation hole 50h. By applying the phosphor resin 121 in the accommodation hole 50h, the flow-out of the phosphor resin 121 can be suppressed, and the coating film thickness can be easily controlled.

次に、パッケージ封止樹脂122を、収容穴50h上及び収容穴50h周囲の絶縁基板10の第1主面10a上に塗工する。このとき、パッケージ封止樹脂122の流れ出しを抑制するため、例えば図示しない白色系樹脂等を、予め、パッケージ封止樹脂122の塗工領域を囲むように塗工しておいてもよい。具体的には、白色シリコーン樹脂等を、ディスペンサなどを用いて収容穴50hの周囲に枠を描くように吐出する。この枠内にパッケージ封止樹脂122を塗工することで、パッケージ封止樹脂122の流れ出しを抑制することができる。また、所定の反射率を有する白色系樹脂を所定形状に設けることで、白色系樹脂を青色LEDチップ100から発せられた光を反射させる白色系反射塗膜としても機能させることができる。   Next, the package sealing resin 122 is applied onto the accommodation hole 50h and the first main surface 10a of the insulating substrate 10 around the accommodation hole 50h. At this time, in order to prevent the package sealing resin 122 from flowing out, for example, a white resin (not shown) may be applied in advance so as to surround the coating region of the package sealing resin 122. Specifically, white silicone resin or the like is discharged using a dispenser or the like so as to draw a frame around the accommodation hole 50h. By applying the package sealing resin 122 in the frame, the package sealing resin 122 can be prevented from flowing out. In addition, by providing a white resin having a predetermined reflectance in a predetermined shape, the white resin can also function as a white-based reflective coating film that reflects light emitted from the blue LED chip 100.

以上により、LEDモジュールとして構成される本実施形態に係る発光装置が形成される。   As described above, the light emitting device according to this embodiment configured as an LED module is formed.

なお、発光装置が備える発光素子搭載用配線基板を、青色LEDチップ100が収容された収容穴50hを1個又は複数個含むように、ダイサやビグ刃を用いて個片化することで、LEDパッケージが得られる。   In addition, the light emitting element mounting wiring board provided in the light emitting device is separated into pieces by using a dicer or a big blade so as to include one or a plurality of accommodation holes 50h in which the blue LED chip 100 is accommodated. A package is obtained.

<本発明の第2実施形態>
次に、本発明の第2実施形態に係る発光装置及び発光装置が有する発光素子搭載用配線基板について説明する。本実施形態に係る発光装置においては、電極2つが共に片面に形成された発光素子が搭載されている点が、上述の実施形態とは異なる。以下の説明に用いる図4においては、上述の実施形態と同様の機能を有する同様の構成には同一の符号を付して、以下の説明を省略する。図4は、本実施形態に係る発光装置の一部を示す断面図である。
<Second Embodiment of the Present Invention>
Next, a light emitting device and a light emitting element mounting wiring board included in the light emitting device according to a second embodiment of the present invention will be described. The light emitting device according to this embodiment is different from the above-described embodiment in that a light emitting element in which two electrodes are formed on one side is mounted. In FIG. 4 used for the following description, the same components having the same functions as those of the above-described embodiment are denoted by the same reference numerals, and the following description is omitted. FIG. 4 is a cross-sectional view showing a part of the light emitting device according to this embodiment.

(1)発光素子搭載用配線基板の構造
図4に示すように、本実施形態に係る発光装置が備える発光素子搭載用配線基板は、絶縁基板10を貫通するように形成され、絶縁基板10の第1主面10aと第2主面10bとを導通させる導電部221v及び他の導電部222vを有する。導電部221v,222vの第1主面10a側は、例えば450nm付近にピーク波長を有する発光素子としての青色LEDチップ200が有する図示しない2つの電極等と、ワイヤ211,212により、それぞれワイヤボンディング接続可能に構成されている。
(1) Structure of Light-Emitting Element Mounting Wiring Substrate As shown in FIG. 4, the light-emitting element mounting wiring board included in the light-emitting device according to this embodiment is formed so as to penetrate through the insulating substrate 10. The first main surface 10a and the second main surface 10b are provided with a conductive portion 221v and another conductive portion 222v. The first main surface 10a side of the conductive portions 221v and 222v is connected by wire bonding by two electrodes (not shown) included in the blue LED chip 200 as a light emitting element having a peak wavelength near 450 nm, for example, and wires 211 and 212, respectively. It is configured to be possible.

また、発光素子搭載用配線基板は、絶縁基板10の第2主面10b上に形成され、導電部221v,222vとそれぞれ接続する導電部用導体パターン231p及び他の導電部用導体パターン233pを有する。導電部用導体パターン231p,233pは、導電部221v,222vを介して、青色LEDチップ200の2つの電極間に電圧を印加する配線として構成されている。   Further, the light emitting element mounting wiring board is formed on the second main surface 10b of the insulating substrate 10 and has a conductive part conductor pattern 231p and another conductive part conductive pattern 233p connected to the conductive parts 221v and 222v, respectively. . The conductive portion conductor patterns 231p and 233p are configured as wirings for applying a voltage between the two electrodes of the blue LED chip 200 via the conductive portions 221v and 222v.

また、発光素子搭載用配線基板は、収容穴50hから第1主面10a側へ向かって一部が露出するように絶縁基板10の第2主面10b上に形成され、露出部分に青色LEDチップ200を搭載可能に構成される搭載用導体パターン232pを有する。搭載用導体パターン232pは、青色LEDチップ200と電気的な導通を有している必要はなく、専ら青色LEDチップ200を搭載し、また、露出部分に施されたAgメッキ等(図示せず)により青色LEDチップ200からの光を反射させる働きを有する。   The light emitting element mounting wiring board is formed on the second main surface 10b of the insulating substrate 10 so that a part thereof is exposed from the accommodation hole 50h toward the first main surface 10a, and the blue LED chip is formed on the exposed portion. 200 has a mounting conductor pattern 232p configured to be capable of mounting 200. The mounting conductor pattern 232p does not need to have electrical continuity with the blue LED chip 200, and is mounted exclusively with the blue LED chip 200, and Ag plating or the like (not shown) applied to the exposed portion. Therefore, the light from the blue LED chip 200 is reflected.

上記の発光素子搭載用配線基板は、上述の実施形態と同様の製造方法を用い、導電部形成工程にて導電部221v,222vを共に形成し、エッチング工程にて導電部用導体パターン231p,233pを共に形成することで製造することができる。   The above-described wiring board for mounting a light emitting element uses the same manufacturing method as that of the above-described embodiment, forms the conductive portions 221v and 222v in the conductive portion forming step, and forms conductive patterns 231p and 233p for the conductive portion in the etching step. Can be manufactured together.

(2)発光装置の構造
また、図4に示すように、本実施形態に係る発光装置は、上記の発光素子搭載用配線基板に青色LEDチップ200が搭載されたLEDモジュールとして構成されている。具体的には、収容穴50hに収容され、搭載用導体パターン232pに搭載された青色LEDチップ200の図示しない2つ電極のうちの1つが、導電部221vの第1主面10a側と、ワイヤ211によりワイヤボンディング接続されると共に、青色LEDチップ200のもう1つの電極が、他の導電部222vの、絶縁基板10の第1主面10a側に露出した部分と、ワイヤ212によりワイヤボンディング接続されている。
(2) Structure of Light-Emitting Device As shown in FIG. 4, the light-emitting device according to the present embodiment is configured as an LED module in which a blue LED chip 200 is mounted on the light-emitting element mounting wiring board. Specifically, one of the two electrodes (not shown) of the blue LED chip 200 housed in the housing hole 50h and mounted on the mounting conductor pattern 232p is connected to the first main surface 10a side of the conductive portion 221v and the wire. 211, and another electrode of the blue LED chip 200 is wire-bonded and connected to a portion of the other conductive portion 222 v exposed to the first main surface 10 a side of the insulating substrate 10 by a wire 212. ing.

上記の発光装置は、上述の実施形態と同様のワイヤボンディング工程において、導電部221v,222vを、それぞれ青色LEDチップ200とワイヤボンディング接続することで製造することができる。   The light-emitting device can be manufactured by wire-bonding the conductive portions 221v and 222v to the blue LED chip 200 in the same wire bonding step as in the above-described embodiment.

<本発明の他の実施形態>
以上、本発明の実施形態を具体的に説明したが、本発明は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
<Other Embodiments of the Present Invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

例えば、上述の実施形態においては、絶縁基板10は、基材11と白色絶縁材12とを有することとしたが、絶縁基板は、絶縁基板の光反射面を構成する白色の基材を有することとしてもよい。この場合、基材自体が光を反射させる機能を有するので、別途、白色絶縁材を設ける必要がない。また、この場合、収容穴50hの側壁面50wに設ける反射塗膜を廃してもよい。このような、反射率の高い絶縁基板の具体例を挙げると、接着材を塗工した有沢製作所製の白色カバーレイ等がある。   For example, in the above-described embodiment, the insulating substrate 10 has the base material 11 and the white insulating material 12, but the insulating substrate has a white base material that constitutes the light reflection surface of the insulating substrate. It is good. In this case, since the base material itself has a function of reflecting light, it is not necessary to separately provide a white insulating material. In this case, the reflective coating provided on the side wall surface 50w of the accommodation hole 50h may be discarded. As a specific example of such an insulating substrate having a high reflectance, there is a white coverlay made by Arisawa Seisakusho coated with an adhesive.

また、上述の実施形態においては、収容穴50hの側壁面50wに形成される反射塗膜52には、熱硬化型の白色系ソルダレジストを用いることとしたが、例えば光反応型の白色系ソルダレジスト等を用いることもできる。この場合、例えばフォトリソグラフィ方式により、所定位置、つまり、側壁面50wに塗工された反射塗膜を形成することができる。   In the above-described embodiment, a thermosetting white solder resist is used for the reflective coating film 52 formed on the side wall surface 50w of the accommodation hole 50h. For example, a photoreactive white solder is used. A resist or the like can also be used. In this case, a reflective coating applied to a predetermined position, that is, the side wall surface 50w can be formed by, for example, a photolithography method.

また、上述の実施形態においては、絶縁基板10の第1主面10aや、収容穴50hの側壁面50wに白色系材料を設けることとしたが、材料はこれに限られない。白色系材料を用いた場合、有機系・無機系によらず光や熱による劣化が起こり、徐々にではあるが、反射量が次第に低下していくおそれがある。発光効率の経時変化に対して非常にシビアであるなど、発光装置に対する要求仕様によっては、例えば上記材料に黒色系材料を使用し、当初より反射量を抑えた構成とすることも可能である。これにより、発光装置の初期の発光効率は低いながらも、使用環境による発光効率の経時変化を抑えることができる。   In the above-described embodiment, the white material is provided on the first main surface 10a of the insulating substrate 10 and the side wall surface 50w of the accommodation hole 50h. However, the material is not limited to this. When a white material is used, deterioration due to light or heat occurs regardless of whether it is organic or inorganic, and there is a possibility that the amount of reflection gradually decreases. Depending on the required specifications for the light emitting device, such as being very severe with respect to changes in light emission efficiency over time, for example, a black material may be used as the material, and the reflection amount may be reduced from the beginning. Thereby, although the initial light emission efficiency of the light emitting device is low, it is possible to suppress the temporal change of the light emission efficiency due to the use environment.

また、上述の実施形態においては、絶縁基板10の第1主面10a側の導電部20v,221v,222vの高さを、絶縁基板10の第1主面10aの高さと揃えることとしたが、埋め込みメッキ時間等を調整して、青色LEDチップ100,200とワイヤボンディング接続可能な範囲内で、第1主面10aよりも窪ませたり、突出させたりしてもよい。また、導電部を第1主面よりも突出させる場合には、貫通孔20hの開口径よりも大きい径で導電部が突出していてもよい。   In the above-described embodiment, the heights of the conductive portions 20v, 221v, and 222v on the first main surface 10a side of the insulating substrate 10 are aligned with the height of the first main surface 10a of the insulating substrate 10. The embedding plating time or the like may be adjusted so as to be recessed or protruded from the first main surface 10a within a range in which the blue LED chips 100 and 200 can be connected by wire bonding. Further, when the conductive portion is protruded from the first main surface, the conductive portion may protrude with a diameter larger than the opening diameter of the through hole 20h.

また、上述の実施形態においては、導電部20v,221v,222vは、銅(Cu)メッキ等の導電材からなるとしたが、導電ペースト等の他の導電材を使用することも可能である。   In the above-described embodiment, the conductive portions 20v, 221v, and 222v are made of a conductive material such as copper (Cu) plating. However, other conductive materials such as a conductive paste may be used.

また、上述の実施形態においては、発光装置は、1つの収容穴50hに1つの青色LEDチップ100が収容された構成であるとしたが、1つの収容穴50hに複数個の青色LEDチップが収容された構成としてもよい。この場合、個片化してLEDパッケージとする際にも、複数個の青色LEDチップが収容された1つの収容穴を有する構成や、複数個の青色LEDチップが収容された複数個の収容穴を有する構成としてもよい。   In the above-described embodiment, the light emitting device is configured such that one blue LED chip 100 is accommodated in one accommodation hole 50h. However, a plurality of blue LED chips are accommodated in one accommodation hole 50h. A configuration may be adopted. In this case, when the LED package is made into individual pieces, a configuration having one accommodation hole in which a plurality of blue LED chips are accommodated, or a plurality of accommodation holes in which a plurality of blue LED chips are accommodated. It is good also as a structure to have.

また、上述の実施形態においては、収容穴50hをレーザ加工により形成することとしたが、例えばフォトリソグラフィ方式を用いたポリイミドエッチング等により、収容穴を形成してもよい。ポリイミドエッチングの場合、収容穴の形状等は絶縁基板の材料に依存するところが大きく、レーザ加工に比べて収容穴のテーパ角の制御性は落ちるものの、エッチング条件等を調整することで所定のテーパ形状を得ることができる。   In the above-described embodiment, the accommodation hole 50h is formed by laser processing. However, the accommodation hole may be formed by, for example, polyimide etching using a photolithography method. In the case of polyimide etching, the shape of the accommodation hole largely depends on the material of the insulating substrate, and the controllability of the taper angle of the accommodation hole is reduced compared to laser processing, but by adjusting the etching conditions etc., the predetermined taper shape Can be obtained.

また、上述の実施形態においては、TABテープ向けの製造工程を適用して発光素子搭載用配線基板を製造することとしたが、用いる絶縁基板等により、リジット配線基板やフレキシブル配線基板向けの製造工程を適用することも可能である。   Further, in the above-described embodiment, the light emitting element mounting wiring board is manufactured by applying the manufacturing process for the TAB tape. However, depending on the insulating substrate used, the manufacturing process for the rigid wiring board and the flexible wiring board is used. It is also possible to apply.

10 絶縁基板
10a 第1主面
10b 第2主面
12a 光反射面
20v,221v,222v 導電部
31p,231p,233p 導電部用導体パターン
32p,232p 搭載用導体パターン
50h 収容穴
100,200 青色LEDチップ(発光素子)
120 封止材
DESCRIPTION OF SYMBOLS 10 Insulation board | substrate 10a 1st main surface 10b 2nd main surface 12a Light reflection surface 20v, 221v, 222v Conductive part 31p, 231p, 233p Conductive part conductive pattern 32p, 232p Mounting conductive pattern 50h Housing hole 100,200 Blue LED chip (Light emitting element)
120 Sealing material

Claims (14)

第1主面側が光反射面となっている絶縁基板と、
前記絶縁基板を貫通するように形成され、前記絶縁基板の前記第1主面と第2主面とを導通させる導電部と、
前記絶縁基板の前記第2主面上に形成され、前記導電部と接続する導電部用導体パターンと、を有し、
前記導電部の前記第1主面側に露出した部分が、前記絶縁基板の前記第1主面側から外部に向けて光を発するように搭載される発光素子とワイヤボンディング接続可能に構成されている
ことを特徴とする発光素子搭載用配線基板。
An insulating substrate having a light reflecting surface on the first main surface side;
A conductive portion formed so as to penetrate the insulating substrate and electrically connecting the first main surface and the second main surface of the insulating substrate;
A conductive pattern for a conductive part formed on the second main surface of the insulating substrate and connected to the conductive part;
A portion exposed to the first main surface side of the conductive portion is configured to be capable of wire bonding connection with a light emitting element mounted so as to emit light from the first main surface side of the insulating substrate toward the outside. A wiring board for mounting a light-emitting element.
前記絶縁基板の前記第1主面側から前記第2主面側に向かって内径が小さくなるように前記絶縁基板を貫通し、前記発光素子を収容可能に構成される収容穴と、
前記収容穴から前記第1主面側へ向かって一部が露出するように前記絶縁基板の前記第2主面上に形成され、露出部分に前記発光素子を搭載可能に構成される搭載用導体パターンと、を有する
ことを特徴とする請求項1に記載の発光素子搭載用配線基板。
A housing hole configured to penetrate the insulating substrate so that the inner diameter decreases from the first main surface side of the insulating substrate toward the second main surface side, and to accommodate the light emitting element;
A mounting conductor formed on the second main surface of the insulating substrate so as to be partially exposed from the housing hole toward the first main surface, and configured to mount the light emitting element on the exposed portion. The light-emitting element mounting wiring board according to claim 1, further comprising: a pattern.
前記光反射面の光の全反射率は、
波長が450nmの光に対して80%以上である
ことを特徴とする請求項1又は2に記載の発光素子搭載用配線基板。
The total light reflectance of the light reflecting surface is
The wiring board for mounting a light emitting element according to claim 1 or 2, wherein the wavelength is 80% or more with respect to light having a wavelength of 450 nm.
前記光反射面は、略白色である
ことを特徴とする請求項1〜3のいずれかに記載の発光素子搭載用配線基板。
The light-emitting element mounting wiring board according to claim 1, wherein the light reflecting surface is substantially white.
前記絶縁基板は、
前記絶縁基板の前記第2主面側に配置される基材と、
前記絶縁基板の前記第1主面側に配置され、前記絶縁基板の前記光反射面を構成する白色絶縁材と、を有する
ことを特徴とする請求項1〜4のいずれかに記載の発光素子搭載用配線基板。
The insulating substrate is
A base material disposed on the second main surface side of the insulating substrate;
The light-emitting element according to claim 1, further comprising: a white insulating material disposed on the first main surface side of the insulating substrate and constituting the light reflecting surface of the insulating substrate. Wiring board for mounting.
前記基材は、
厚さが4μm以上75μm以下の、ポリイミド、ポリアミドイミド、ポリエチレンナフタレート、エポキシ、アラミドのいずれかの樹脂からなり、
前記絶縁基板は、
曲率半径が50mm以下に折り曲げ可能である
ことを特徴とする請求項5に記載の発光素子搭載用配線基板。
The substrate is
It is made of any resin of polyimide, polyamideimide, polyethylene naphthalate, epoxy, aramid having a thickness of 4 μm to 75 μm,
The insulating substrate is
6. The wiring board for mounting a light emitting element according to claim 5, wherein the radius of curvature is bendable to 50 mm or less.
前記収容穴の側壁面には、反射塗膜が形成されている
ことを特徴とする請求項2〜6のいずれかに記載の発光素子搭載用配線基板。
The wiring board for mounting a light-emitting element according to claim 2, wherein a reflective coating film is formed on a side wall surface of the accommodation hole.
前記搭載用導体パターンの前記収容穴から露出した部分及び前記導電部の前記第1主面側に露出した部分には、金、銀、パラジウム、ニッケル、錫のいずれかの元素を含むメッキが施されている
ことを特徴とする請求項2〜7のいずれかに記載の発光素子搭載用配線基板。
The portion of the mounting conductor pattern exposed from the accommodation hole and the portion of the conductive portion exposed to the first main surface are plated with one of gold, silver, palladium, nickel, and tin. The wiring board for mounting a light emitting element according to claim 2, wherein the wiring board is mounted.
第1主面側が光反射面となっている絶縁基板と、
前記絶縁基板を貫通するように形成され、前記絶縁基板の前記第1主面と第2主面とを導通させる導電部と、
前記絶縁基板の前記第2主面上に形成され、前記導電部と接続する導電部用導体パターンと、を有する発光素子搭載用配線基板を備え、
前記導電部の前記第1主面側に露出した部分には、前記絶縁基板の前記第1主面側から外部に向けて光を発するように搭載された発光素子がワイヤボンディング接続されていることを特徴とする発光装置。
An insulating substrate having a light reflecting surface on the first main surface side;
A conductive portion formed so as to penetrate the insulating substrate and electrically connecting the first main surface and the second main surface of the insulating substrate;
A light emitting element mounting wiring board having a conductive pattern for a conductive portion formed on the second main surface of the insulating substrate and connected to the conductive portion;
A light emitting element mounted so as to emit light from the first main surface side of the insulating substrate to the outside is wire-bonded to a portion exposed to the first main surface side of the conductive portion. A light emitting device characterized by the above.
前記発光素子搭載用配線基板は、
前記絶縁基板の前記第1主面側から前記第2主面側に向かって内径が小さくなるように前記絶縁基板を貫通し、前記発光素子が収容された収容穴と、
前記収容穴から前記第1主面側へ向かって一部が露出するように前記絶縁基板の前記第2主面上に形成され、露出部分に前記発光素子が搭載された搭載用導体パターンと、を有し、
前記発光素子は、
封止材により前記収容穴内に封止されている
ことを特徴とする請求項9に記載の発光装置。
The light emitting element mounting wiring board is:
An accommodation hole in which the light emitting element is accommodated, penetrating through the insulation substrate so that the inner diameter decreases from the first principal surface side of the insulation substrate toward the second principal surface side;
A mounting conductor pattern formed on the second main surface of the insulating substrate so as to be partially exposed from the housing hole toward the first main surface side, and the light emitting element mounted on the exposed portion; Have
The light emitting element is
The light emitting device according to claim 9, wherein the light emitting device is sealed in the accommodation hole by a sealing material.
前記搭載用導体パターンに搭載された前記発光素子は、
前記導電部にワイヤボンディング接続されると共に、
前記搭載用導体パターンにダイボンディング接続されている
ことを特徴とする請求項10に記載の発光装置。
The light emitting element mounted on the mounting conductor pattern is:
While being connected to the conductive portion by wire bonding,
The light emitting device according to claim 10, wherein the light emitting device is die-bonded to the mounting conductor pattern.
前記発光素子搭載用配線基板は、
前記絶縁基板を貫通するように形成され、前記絶縁基板の前記第1主面と前記第2主面とを導通させる他の導電部と、
前記絶縁基板の前記第2主面上に形成され、前記他の導電部と接続する他の導電部用導体パターンと、を有し、
前記搭載用導体パターンに搭載された前記発光素子は、
前記導電部にワイヤボンディング接続されると共に、
前記他の導電部の前記第1主面側に露出した部分に、ワイヤボンディング接続されている
ことを特徴とする請求項10に記載の発光装置。
The light emitting element mounting wiring board is:
Another conductive part formed so as to penetrate the insulating substrate and electrically connecting the first main surface and the second main surface of the insulating substrate;
A conductive pattern for another conductive portion formed on the second main surface of the insulating substrate and connected to the other conductive portion;
The light emitting element mounted on the mounting conductor pattern is:
While being connected to the conductive portion by wire bonding,
The light emitting device according to claim 10, wherein a wire bonding connection is made to a portion of the other conductive portion exposed to the first main surface side.
第1主面側が光反射面となっている絶縁基板に、貫通孔を形成する貫通孔形成工程と、
前記絶縁基板の第2主面上に、前記貫通孔を覆うように導体層を形成する導体層形成工程と、
前記絶縁基板の前記第1主面側から前記貫通孔内に導電材を充填し、前記絶縁基板の前記第1主面と前記第2主面とを導通させる導電部を形成する導電部形成工程と、
前記絶縁基板の前記第2主面上に形成した前記導体層をエッチングして、前記導電部と接続する導電部用導体パターンを形成するエッチング工程と、を有し、
前記導電部形成工程では、
前記導電部の前記第1主面側に露出した部分を、前記絶縁基板の前記第1主面側から外部に向けて光を発するように搭載される発光素子とワイヤボンディング接続可能に構成する
ことを特徴とする発光素子搭載用配線基板の製造方法。
A through-hole forming step of forming a through-hole in the insulating substrate whose first main surface side is a light reflecting surface;
A conductor layer forming step of forming a conductor layer on the second main surface of the insulating substrate so as to cover the through hole;
A conductive portion forming step of forming a conductive portion that fills the through-hole with a conductive material from the first main surface side of the insulating substrate and electrically connects the first main surface and the second main surface of the insulating substrate. When,
Etching the conductor layer formed on the second main surface of the insulating substrate to form a conductive pattern for a conductive portion connected to the conductive portion, and
In the conductive part forming step,
A portion exposed to the first main surface side of the conductive portion is configured to be wire bonding connectable to a light emitting element mounted so as to emit light from the first main surface side of the insulating substrate toward the outside. A method for manufacturing a wiring board for mounting a light emitting element.
前記絶縁基板の前記第1主面側から前記第2主面側に向かって内径が小さくなるように前記絶縁基板を貫通させ、前記発光素子を収容可能に構成される収容穴を前記絶縁基板に形成する収容穴形成工程を有し、
前記エッチング工程では、
前記絶縁基板の前記第2主面上に形成した前記導体層をエッチングして、前記収容穴か
ら前記第1主面側へ向かって一部が露出し、露出部分に前記発光素子を搭載可能なように搭載用導体パターンを形成し、
前記収容穴形成工程は、少なくとも前記導電部形成工程よりも後に行う
ことを特徴とする請求項13に記載の発光素子搭載用配線基板の製造方法。
The insulating substrate is provided with a receiving hole configured to penetrate the insulating substrate so that the inner diameter decreases from the first main surface side to the second main surface side of the insulating substrate, and to accommodate the light emitting element. A housing hole forming step to be formed;
In the etching step,
The conductor layer formed on the second main surface of the insulating substrate is etched so that a part is exposed from the accommodation hole toward the first main surface, and the light emitting element can be mounted on the exposed portion. To form a mounting conductor pattern,
14. The method for manufacturing a wiring board for mounting a light emitting element according to claim 13, wherein the housing hole forming step is performed at least after the conductive portion forming step.
JP2011073146A 2011-03-29 2011-03-29 Wiring board for mounting light-emitting element, light-emitting device and method for manufacturing wiring board for mounting light-emitting element Withdrawn JP2012209389A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050310A (en) * 2013-08-31 2015-03-16 京セラサーキットソリューションズ株式会社 Method for manufacturing wiring board
CN114450860A (en) * 2019-09-30 2022-05-06 京瓷株式会社 Package for mounting optical element, electronic device, and electronic module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050310A (en) * 2013-08-31 2015-03-16 京セラサーキットソリューションズ株式会社 Method for manufacturing wiring board
CN114450860A (en) * 2019-09-30 2022-05-06 京瓷株式会社 Package for mounting optical element, electronic device, and electronic module

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