JP2019087512A - 金属ナノワイヤ転写用の金属ナノワイヤ付支持基材及び透明導電フィルムの製造方法 - Google Patents
金属ナノワイヤ転写用の金属ナノワイヤ付支持基材及び透明導電フィルムの製造方法 Download PDFInfo
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- JP2019087512A JP2019087512A JP2017217245A JP2017217245A JP2019087512A JP 2019087512 A JP2019087512 A JP 2019087512A JP 2017217245 A JP2017217245 A JP 2017217245A JP 2017217245 A JP2017217245 A JP 2017217245A JP 2019087512 A JP2019087512 A JP 2019087512A
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- metal
- metal nanowires
- nanowires
- film
- transparent conductive
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- 239000002184 metal Substances 0.000 title claims abstract description 199
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- 229910052718 tin Inorganic materials 0.000 description 1
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- Powder Metallurgy (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Laminated Bodies (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
Description
銀ナノワイヤは、硝酸銀、ハロゲン化四級アンモニウム塩、ポリビニルピロリドン、プロピレングリコールを用いた公知のポリオール法により合成した。
上記銀ナノワイヤ合成液からセラミックろ過膜を用いた公知のクロスフロー法によってメタノールを溶剤として精製した。クロスフローによって精製された銀ナノワイヤメタノール分散液を濃縮し、0.2質量%に調整した。銀ナノワイヤ合成液同様に求めたこの銀ナノワイヤ精製液中の銀ナノワイヤの平均径は32nm、平均長さは22μm、不純物微粒子の質量は0.003質量%であった。クロスフローろ過精製時に銀ナノワイヤの一部が破砕したため、銀ナノワイヤ精製液中の銀ナノワイヤの平均長さは、銀ナノワイヤ合成液中の銀ナノワイヤの平均長さより短くなった。
上記金属ナノワイヤの合成により得られた銀ナノワイヤ合成液(クロスフローろ過精製前)を用いて以下の製造工程により透明導電フィルムを製造した。メンブランタイプのろ過器として、柴田科学社製47mm用メンブレンフィルター装置(フィルターホルダー ガラスフィルターベースタイプ)を用いた。また、セルロース系多孔質フィルムは、47mmφ 孔径0.8μm(カタログ値)のセルロースアセテートタイプのろ材(形式:C080A047A、アドバンテック社製)を用いた。使用する前にろ材を水30mlに5分間浸した後、フィルターベース上部にセット、ファネルをクランプではさんだ。
表1に記載のプレス温度、プレス圧力、プレス時間に変更した以外は実施例1同様の操作により透明導電フィルムを作製し、その評価を行った。結果を表1に示す。
上記銀ナノワイヤ精製液を用いた以外は実施例1と同様の操作により透明導電フィルムを得た。評価結果を表1に示す。
ろ材を孔径が3μm(カタログ値)のセルロースアセテートタイプ(形式:C300A047A、アドバンテック社製)、透明フィルム基材をシクロオレフィンポリマーフィルム(日本ゼオン社製 ZF−14 厚み50μm)に変更した以外は実施例1と同様の操作により透明導電フィルムを得た。結果を表1に示す。
上記銀ナノワイヤ合成液をメタノールで100倍(質量)に希釈し、実施例1で用いたPETフィルムのハードコート層上に塗布、乾燥して表面観察を行った。
ろ材を孔径が1μm(カタログ値)の親水性PTFEタイプ(形式:H100A047A、アドバンテック社製)に変更した以外は実施例5同様の操作により透明導電フィルムの作製を試みた。顕微鏡観察を行った結果、ほとんど銀ナノワイヤの転写はできなかった(目視で観察したPETフィルム上へ転写できた銀ナノワイヤは0%)。
ろ材を孔径が0.8μm(カタログ値)のポリカーボネートタイプ(形式:K080A047A、アドバンテック社製)に変更した以外は実施例5同様の操作により透明導電フィルムの作製を試みたが、目視で観察したPETフィルム上へ転写できた銀ナノワイヤは約20%程度であった。
Claims (5)
- 金属ナノワイヤがセルロース系多孔質フィルム上に堆積されていることを特徴とする金属ナノワイヤ転写用の金属ナノワイヤ付支持基材。
- 前記セルロース系多孔質フィルムの平均孔径が0.01〜10μmである請求項1に記載の金属ナノワイヤ付支持基材。
- 透明フィルム基材上に金属ナノワイヤが堆積した透明導電フィルムの製造方法であって、金属ナノワイヤを含有する分散液を、セルロース系多孔質フィルムを通してろ過して金属ナノワイヤを堆積させ、金属ナノワイヤ付支持基材を準備する工程と、前記金属ナノワイヤ付支持基材に堆積した金属ナノワイヤを透明フィルム基材上へ転写する工程と、を含む透明導電フィルムの製造方法。
- 前記金属ナノワイヤを含有する分散液が、金属ナノワイヤを合成した反応液を水および有機溶剤の少なくとも一種からなる液体により希釈された分散液である請求項3に記載の透明導電フィルムの製造方法。
- 前記転写方法が加圧である請求項3又は4に記載の透明導電フィルムの製造方法。
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