JP2019067512A - 半導体固体電池 - Google Patents
半導体固体電池 Download PDFInfo
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- JP2019067512A JP2019067512A JP2017188658A JP2017188658A JP2019067512A JP 2019067512 A JP2019067512 A JP 2019067512A JP 2017188658 A JP2017188658 A JP 2017188658A JP 2017188658 A JP2017188658 A JP 2017188658A JP 2019067512 A JP2019067512 A JP 2019067512A
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- semiconductor
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- silicon compound
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 185
- 239000007787 solid Substances 0.000 title claims abstract description 45
- 239000002245 particle Substances 0.000 claims abstract description 67
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 229910021332 silicide Inorganic materials 0.000 claims description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 31
- 229910006585 β-FeSi Inorganic materials 0.000 claims description 16
- 229910016066 BaSi Inorganic materials 0.000 claims description 14
- 229910019018 Mg 2 Si Inorganic materials 0.000 claims description 6
- 229910005881 NiSi 2 Inorganic materials 0.000 claims description 6
- 229910017028 MnSi Inorganic materials 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 230000000977 initiatory effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 68
- 238000000034 method Methods 0.000 description 47
- 239000012298 atmosphere Substances 0.000 description 31
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 21
- 150000004767 nitrides Chemical class 0.000 description 17
- 239000000969 carrier Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 229910001416 lithium ion Inorganic materials 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 206010021143 Hypoxia Diseases 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 4
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 238000010549 co-Evaporation Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910005329 FeSi 2 Inorganic materials 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000652 nickel hydride Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
Nd :伝導帯のキャリア密度、No :最近接ホッピング伝導帯のキャリア密度、
μb :伝導帯のキャリア移動度、 μh :最近接ホッピング伝導帯のキャリア移動度、
Ea :準位と伝導帯下端のエネルギー差、q:電気素量、
ε :準位での近接キャリアトラップ間の電子の平均活性化エネルギー
(実施例1〜7、比較例1)
Siターゲット(純度99.9wt%以上)およびFeターゲット(純度99.9wt%以上)を用意した。
Claims (7)
- n型半導体層とp型半導体層の間に第1の絶縁層を設けた構造を有し、n型半導体層またはp型半導体層のいずれか一方または両方が、高抵抗層中に珪素化合物粒子を含有した構造を有することを特徴とする半導体固体電池。
- 珪素化合物粒子がβ−FeSi2、BaSi2、Mg2Si、MnSi1.7、SiGe、NiSi2から選ばれる1種または2種以上であることを特徴とする請求項1記載の半導体固体電池。
- 珪素化合物粒子の平均粒径は、珪素化合物粒子を含有する高抵抗層の厚さよりも小さいことを特徴とする請求項1又は請求項2のいずれか1項に記載の半導体固体電池。
- 珪素化合物粒子を含有する高抵抗層の任意の断面において、単位面積300nm×300nmあたり、珪素化合物粒子同士の最短距離が1nm以上10nm以下の範囲になっているものが個数割合で40%以上100%以下であることを特徴とする請求項1ないし請求項3のいずれか1項に記載の半導体固体電池。
- n型半導体層は酸化物半導体または金属シリサイド半導体であり、該半導体はバンドギャップを100としたとき50以上90以下の範囲に準位が形成されていることを特徴とする請求項1ないし請求項4のいずれか1項に記載の半導体固体電池。
- p型半導体層は酸化物半導体または金属シリサイド半導体であり、該半導体はバンドギャップを100としたとき10以上50以下の範囲に準位が形成されていることを特徴とする請求項1ないし請求項4のいずれか1項に記載の半導体固体電池。
- 初期の放電開始直後の電圧ドロップが0%以上40%以下であることを特徴とする請求項1ないし請求項6のいずれか1項に記載の半導体固体電池。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021097151A (ja) * | 2019-12-18 | 2021-06-24 | 株式会社東芝 | 半導体固体電池 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62259359A (ja) * | 1986-05-02 | 1987-11-11 | Tech Res Assoc Conduct Inorg Compo | 光二次電池 |
CN101483197A (zh) * | 2009-02-17 | 2009-07-15 | 石艾志 | 电场充电的半导体电池 |
JP2009545845A (ja) * | 2006-08-04 | 2009-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電気化学的エネルギー源、電子装置、およびそのような電気化学的エネルギー源の製造方法 |
WO2012046325A1 (ja) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | 二次電池 |
JP2014154223A (ja) * | 2013-02-05 | 2014-08-25 | Ricoh Co Ltd | 二次電池モジュールおよび太陽電池−二次電池一体型給電素子 |
JP2015050129A (ja) * | 2013-09-04 | 2015-03-16 | 一徳 清家 | 半導体二次電池の正電極の製造方法 |
JP2016091931A (ja) * | 2014-11-10 | 2016-05-23 | パナソニックIpマネジメント株式会社 | 蓄電素子及び蓄電素子の製造方法 |
-
2017
- 2017-09-28 JP JP2017188658A patent/JP6977929B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62259359A (ja) * | 1986-05-02 | 1987-11-11 | Tech Res Assoc Conduct Inorg Compo | 光二次電池 |
JP2009545845A (ja) * | 2006-08-04 | 2009-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電気化学的エネルギー源、電子装置、およびそのような電気化学的エネルギー源の製造方法 |
CN101483197A (zh) * | 2009-02-17 | 2009-07-15 | 石艾志 | 电场充电的半导体电池 |
WO2012046325A1 (ja) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | 二次電池 |
JP2014154223A (ja) * | 2013-02-05 | 2014-08-25 | Ricoh Co Ltd | 二次電池モジュールおよび太陽電池−二次電池一体型給電素子 |
JP2015050129A (ja) * | 2013-09-04 | 2015-03-16 | 一徳 清家 | 半導体二次電池の正電極の製造方法 |
JP2016091931A (ja) * | 2014-11-10 | 2016-05-23 | パナソニックIpマネジメント株式会社 | 蓄電素子及び蓄電素子の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021097151A (ja) * | 2019-12-18 | 2021-06-24 | 株式会社東芝 | 半導体固体電池 |
JP7346275B2 (ja) | 2019-12-18 | 2023-09-19 | 株式会社東芝 | 半導体固体電池 |
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