JP2019064226A - 造形方法および造形用の粉末材料 - Google Patents
造形方法および造形用の粉末材料 Download PDFInfo
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- JP2019064226A JP2019064226A JP2017194428A JP2017194428A JP2019064226A JP 2019064226 A JP2019064226 A JP 2019064226A JP 2017194428 A JP2017194428 A JP 2017194428A JP 2017194428 A JP2017194428 A JP 2017194428A JP 2019064226 A JP2019064226 A JP 2019064226A
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- Prior art keywords
- powder
- silicon carbide
- diboride
- chromium
- metal
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- 239000000843 powder Substances 0.000 title claims abstract description 157
- 239000000463 material Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000000465 moulding Methods 0.000 title abstract description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 135
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 121
- UHPOHYZTPBGPKO-UHFFFAOYSA-N bis(boranylidyne)chromium Chemical compound B#[Cr]#B UHPOHYZTPBGPKO-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000002844 melting Methods 0.000 claims abstract description 37
- 230000008018 melting Effects 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 230000005496 eutectics Effects 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000000859 sublimation Methods 0.000 claims abstract description 15
- 230000008022 sublimation Effects 0.000 claims abstract description 15
- NUEWEVRJMWXXFB-UHFFFAOYSA-N chromium(iii) boride Chemical compound [Cr]=[B] NUEWEVRJMWXXFB-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 48
- 238000007493 shaping process Methods 0.000 claims description 36
- 239000011812 mixed powder Substances 0.000 claims description 12
- 230000004927 fusion Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 47
- 239000000203 mixture Substances 0.000 description 22
- 238000003475 lamination Methods 0.000 description 12
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 11
- 238000000227 grinding Methods 0.000 description 11
- 238000005498 polishing Methods 0.000 description 11
- 229910033181 TiB2 Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000000635 electron micrograph Methods 0.000 description 7
- 239000000155 melt Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910007948 ZrB2 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- AUVPWTYQZMLSKY-UHFFFAOYSA-N boron;vanadium Chemical compound [V]#B AUVPWTYQZMLSKY-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B1/00—Producing shaped prefabricated articles from the material
- B28B1/001—Rapid manufacturing of 3D objects by additive depositing, agglomerating or laminating of material
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
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- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/604—Pressing at temperatures other than sintering temperatures
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/665—Local sintering, e.g. laser sintering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Inorganic Chemistry (AREA)
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Abstract
Description
[炭化珪素と混合する粉末材料]
続いて、炭化珪素を含む立体物の作製に適した、炭化珪素と混合する粉末材料について、実験に基づいて説明する。
炭化珪素として、中央値粒子径が14.7μmの炭化珪素粉末(大平洋ランダム株式会社製、商品名NC#800)を用意した。その電子顕微鏡写真を図2に示す。混合する硼化クロムとして、融点が2200℃の二硼化クロム粉末(日本新金属株式会社製、商品名CrB2−O、中央値粒子径約5μm)を用意した。その電子顕微鏡写真を図3に示す。それら粉末を、共晶または亜共晶が生成される組成粉末となるよう、モル比で、炭化ケイ素:二硼化クロム=3:1に調合し、ボールミルにて混合して粉末1とした。モル比の決め方や混合の仕方は、他の粉末も同様である。ここでいう中央値粒子径とは、メジアン径と同義であり、その粉末における頻度の累積が50%となる粒子径を意味する。
粉末1と同様の炭化珪素粉末と、融点が2100℃の一硼化クロム粉末(日本新金属株式会社製、商品名CrB−O、中央値粒子径約9μm)とを、モル比で炭化珪素:一硼化クロム = 3:1に調合して混合し、粉末2とした。
粉末1と同様の炭化珪素粉末と、融点が2400℃の二硼化バナジウム粉末(中央値粒子径約4μm、日本新金属株式会社製、商品名VB2−O)とを、炭化珪素:二硼化バナジウム = 1:1のモル比で調合して混合し、粉末3とした。
粉末1と同様の炭化珪素粉末と、融点が2920℃の二硼化チタン粉末(日本新金属株式会社製、商品名TiB2−N、中央値粒子径約4μm)を、炭化珪素:二硼化チタン = 1:1のモル比で調合して混合し、粉末4とした。
粉末1と同様の炭化珪素粉末と、融点が3200℃の二硼化ジルコニウム(日本新金属株式会社製、商品名ZrB2−O、中央値粒子径約5μm)を、炭化珪素:二硼化ジルコニウム = 1:1のモル比で調合して混合し、粉末5とした。
準備した粉末と図4に示す造形装置とを用いて、造形を行った。具体的には、粉末ごとに、ステンレス製のベースプレート109の上に、底面積が10mm×10mmの直方体の造形物を8つ作製した。造形終了後の8つの造形物121〜128とベースプレート109の斜視図を図5に示す。
造形可否:20層分の造形が完遂できた場合 ○
途中で造形できなくなった場合 ×
研磨可否:#400〜#4000の研磨紙すべてで研磨できた場合 ○
いずれかの研磨紙で研磨している最中に形状が崩れた場合 ×
総合判定:造形可否、研磨可否ともに○の場合 ○
造形可否と研磨可否の少なくとも一方が×の場合 ×
次に、炭化珪素の粉末と二硼化クロムの粉末とを混合した粉末を用いて、造形物に適した炭化珪素と二硼化クロムの混合比を調べた。炭化珪素の粉末、二硼化クロムの粉末には、粉末1と同様の粉末を使用した。
次に、炭化珪素と二硼化クロムとの混合粉末を用いた造形において、造形が可能な炭化珪素粉末の粒子径の範囲について調べた。
粉末材料に含まれる2種類の粉末が均一に混合されていないと、作製される造形物に組成むらができ、物性にむらができてしまう恐れがある。
102 エネルギービーム源
103A、103B 走査ミラー
104 光学系
105 導入窓
106 粉末層形成機構
107 ステージ
108 昇降機構
109 ベースプレート
110 造形物
111 粉末層
112 エネルギービーム
113 排気機構
114 ガス導入機構
115 制御部
Claims (14)
- 炭化珪素と、炭化珪素の昇華点よりも低い融点を持つ硼化金属と、を含む粉末に、造形対象物の形状データに基づいてエネルギービームを照射して造形を行うことを特徴とする造形方法。
- 前記硼化金属が、一硼化クロム、二硼化クロム、二硼化バナジウムのいずれかであることを特徴とする請求項1に記載の造形方法。
- 前記粉末が、前記炭化珪素の粉末と、前記硼化金属の粉末との混合粉末であることを特徴とする請求項1または2に記載の造形方法。
- 前記炭化珪素の粉末の中央値粒子径が、2μm以上41.1μm以下であることを特徴とする請求項3に記載の造形方法。
- 前記粉末が、前記炭化珪素と、前記硼化金属とを含む粒子で構成されていることを特徴とする請求項1または2に記載の造形方法。
- 前記硼化金属が二硼化クロムであり、
前記粉末の炭化珪素、二硼化クロムそれぞれの含有比が、モル比率で、0.54≦炭化珪素/二硼化クロム≦9.00の範囲であることを特徴とする請求項1から5のいずれか1項に記載の造形方法。 - 前記エネルギービームが、レーザビームであることを特徴とする請求項1から6のいずれか1項に記載の造形方法。
- 粉末床溶融結合法または指向エネルギー堆積法に用いる粉末材料であって、
前記炭化珪素と、前記炭化珪素の昇華点よりも低い融点を持つ硼化金属と、を含むことを特徴とする粉末材料。 - 前記硼化金属が、一硼化クロム、二硼化クロム、二硼化バナジウムのいずれかであることを特徴とする請求項8に記載の粉末材料。
- 前記粉末が、炭化珪素の粉末と、前記硼化金属の粉末との混合粉末であることを特徴とする請求項8または9に記載の粉末材料。
- 炭化珪素の粉末の大きさが、中央値粒子径で2μm以上41.1μm以下であることを特徴とする請求項10に記載の粉末材料。
- 前記粉末が、前記炭化珪素と、前記硼化金属とを含む粒子で構成されていることを特徴とする請求項8または9に記載の造形方法。
- 前記硼化金属が二硼化クロムであり、
前記粉末材料の炭化珪素、二硼化クロムそれぞれの含有比が、モル比率で、0.54≦炭化珪素/二硼化クロム≦9.00の範囲にあることを特徴とする請求項8から12のいずれか1項に記載の粉末材料。 - 黄色のマーキング箇所にあった「または亜共晶」を削除しました。
炭化珪素と二硼化クロムとを含む造形物であって、
前記炭化珪素と前記二硼化クロムとの共晶を含み、前記炭化珪素を前記二硼化クロムよりも多く含むことを特徴とする造形物。
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US16/146,862 US20190099914A1 (en) | 2017-10-04 | 2018-09-28 | Shaping method and shaping powder material |
CN201811153237.8A CN109607537A (zh) | 2017-10-04 | 2018-09-30 | 造型方法和造型粉末材料 |
CN202310425244.3A CN116477627A (zh) | 2017-10-04 | 2018-09-30 | 造型方法和造型粉末材料 |
JP2021208958A JP7362718B2 (ja) | 2017-10-04 | 2021-12-23 | 造形方法および造形用の粉末材料 |
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DE112022003329T5 (de) | 2021-06-30 | 2024-04-11 | Canon Kabushiki Kaisha | Gegenstand, der siliciumcarbid als hauptbestandteil enthält, und verfahren zur herstellung desselben |
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US20190099914A1 (en) | 2019-04-04 |
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