JP2019050281A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2019050281A JP2019050281A JP2017173450A JP2017173450A JP2019050281A JP 2019050281 A JP2019050281 A JP 2019050281A JP 2017173450 A JP2017173450 A JP 2017173450A JP 2017173450 A JP2017173450 A JP 2017173450A JP 2019050281 A JP2019050281 A JP 2019050281A
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- 238000005530 etching Methods 0.000 description 11
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- 229910001220 stainless steel Inorganic materials 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
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- Engineering & Computer Science (AREA)
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Drying Of Semiconductors (AREA)
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Abstract
Description
実施形態にかかるプラズマ処理装置について説明する。半導体装置の製造工程において、プラズマ処理装置は、処理ガスのプラズマを生成して処理ガスをイオン化し、処理ガスのイオン(反応性イオン)を基板上の被加工膜に照射することで、被加工膜に微細なエッチング加工を施す。半導体装置の微細化が進むことに伴い、プラズマ処理装置を用いたエッチング技術において、処理対象の基板に対する加工精度を向上することが望まれる。
Claims (7)
- 処理室内に配され、基板が載置されるステージと、
処理ガスをクラスタ化させクラスタガスを生成するクラスタ生成機構と、
前記処理ガス及び前記クラスタガスの少なくとも一方のプラズマを前記処理室内に生成し、生成されたプラズマを用いて前記基板を処理するプラズマ生成機構と、
を備えたプラズマ処理装置。 - 前記プラズマ生成機構は、前記処理ガス及び前記クラスタガスの少なくとも一方をイオン化させ、
前記ステージは、前記イオン化された前記処理ガス及び前記クラスタガスの少なくとも一方を前記基板側へ引き込む電極として機能する
請求項1に記載のプラズマ処理装置。 - 前記クラスタガスを前記処理室に導入する第1の導入経路と、
前記処理ガスを前記処理室に導入する第2の導入経路と、
をさらに備えた
請求項1又は2に記載のプラズマ処理装置。 - 前記第1の導入経路は、前記クラスタ生成機構を経由し、
前記第2の導入経路は、前記クラスタ生成機構を経由しない
請求項3に記載のプラズマ処理装置。 - 前記クラスタガスを前記処理室に導入する第1の導入孔と前記処理ガスを前記処理室に導入する第2の導入孔とを有するシャワーヘッドをさらに備えた
請求項1から4のいずれか1項に記載のプラズマ処理装置。 - 前記シャワーヘッドは、複数の前記第1の導入孔と複数の前記第2の導入孔とを有し、
前記複数の第1の導入孔と前記複数の第2の導入孔とは、それぞれ、前記シャワーヘッドにおける前記ステージに対向する主面内において2次元的に配されている
請求項5に記載のプラズマ処理装置。 - 前記第1の導入経路を介した前記クラスタガスの前記処理室への導入と前記第2の導入経路を介した前記処理ガスの前記処理室への導入とを並行して行うコントローラをさらに備えた
請求項3又は4に記載のプラズマ処理装置。
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JP2017173450A JP6813459B2 (ja) | 2017-09-08 | 2017-09-08 | プラズマ処理装置 |
US15/907,464 US10522372B2 (en) | 2017-09-08 | 2018-02-28 | Plasma processing device |
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JP2017173450A JP6813459B2 (ja) | 2017-09-08 | 2017-09-08 | プラズマ処理装置 |
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JP2019050281A true JP2019050281A (ja) | 2019-03-28 |
JP6813459B2 JP6813459B2 (ja) | 2021-01-13 |
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CN112056009B (zh) * | 2018-05-23 | 2023-04-07 | 株式会社富士 | 等离子体处理机 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003027222A (ja) * | 2001-07-11 | 2003-01-29 | Shin Meiwa Ind Co Ltd | 真空成膜装置 |
JP2003529926A (ja) * | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
JP2014060221A (ja) * | 2012-09-14 | 2014-04-03 | Tokyo Electron Ltd | エッチング装置およびエッチング方法 |
JP2016027615A (ja) * | 2014-07-02 | 2016-02-18 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄装置 |
JP2016143583A (ja) * | 2015-02-03 | 2016-08-08 | 株式会社日立ハイテクサイエンス | イオン源、イオンビーム装置および試料の加工方法 |
JP2016192534A (ja) * | 2015-03-30 | 2016-11-10 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
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JP2639158B2 (ja) | 1989-08-02 | 1997-08-06 | 日本電気株式会社 | エッチング方法およびエッチング装置 |
JPH05102083A (ja) | 1991-10-08 | 1993-04-23 | Toshiba Corp | ドライエツチング方法及びそのための装置 |
US7732759B2 (en) * | 2008-05-23 | 2010-06-08 | Tokyo Electron Limited | Multi-plasma neutral beam source and method of operating |
JP6096547B2 (ja) * | 2013-03-21 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワープレート |
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- 2017-09-08 JP JP2017173450A patent/JP6813459B2/ja active Active
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- 2018-02-28 US US15/907,464 patent/US10522372B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003529926A (ja) * | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
JP2003027222A (ja) * | 2001-07-11 | 2003-01-29 | Shin Meiwa Ind Co Ltd | 真空成膜装置 |
JP2014060221A (ja) * | 2012-09-14 | 2014-04-03 | Tokyo Electron Ltd | エッチング装置およびエッチング方法 |
JP2016027615A (ja) * | 2014-07-02 | 2016-02-18 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄装置 |
JP2016143583A (ja) * | 2015-02-03 | 2016-08-08 | 株式会社日立ハイテクサイエンス | イオン源、イオンビーム装置および試料の加工方法 |
JP2016192534A (ja) * | 2015-03-30 | 2016-11-10 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
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JP6813459B2 (ja) | 2021-01-13 |
US20190080935A1 (en) | 2019-03-14 |
US10522372B2 (en) | 2019-12-31 |
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