JP2019047125A - ゲッター構造体及び当該構造体の形成方法 - Google Patents
ゲッター構造体及び当該構造体の形成方法 Download PDFInfo
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- 230000008021 deposition Effects 0.000 claims description 32
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- 229910052719 titanium Inorganic materials 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 4
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- 238000001514 detection method Methods 0.000 description 4
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
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- 238000003491 array Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
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- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
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- 150000001247 metal acetylides Chemical class 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
【解決手段】ゲッター構造体及び方法において、1層の種材料がある条件下で構造体の表面10の所定の領域上に付着され、該構造体の表面上に複数の核サイト24を形成する。核サイトは、所定の領域の表面積上に1分子厚さ未満の平均高さを有する。引き続き、ゲッター材料21が該表面上に付着されて、核サイトから外方に突出する複数のゲッター材料部材を形成する。
【選択図】図6A
Description
図3及び図4を参照すると、デュワー組立体が示されており、デュワー組立体は、好ましくはシリコンである半導体材料でできた読み出し集積回路(ROIC)基板2を有する。IR検出器アレイ14が基板2上に位置づけられ、IR検出器アレイ14は、複数の個々の、ピクセルと呼ばれる検出器素子16を含む。図4は単一の5×6個の検出器素子16の長方形アレイを示しているが、代表的なIR集積回路は概して数百×数百までのピクセル16を伴う平坦IR検出器アレイを含むことを理解されたい。多くの商業的応用においては、IR検出器は、通常未冷却であり、IR放射により検出器に付加された熱からの結果としての温度上昇を検知することによりIR放射の強度を検出する。未冷却IR検出器の代表的な例として、バナジウムオキサイド(VOx)マイクロボロメータ(MB)がある。バナジウムオキサイドマイクロボロメータにおいては、複数の個々の検出器が通常は、従来の半導体製造プロセスによって、ROIC基板2上でアレイに形成される。MBアレイは、IR生成熱を検知することにより、IR放射を検出し、焦点面アレイ(FPA)又はセンサーチップ組立体(SCA)とも呼ばれる。基板2は、ボロメータにより生成された信号を処理するのに用いる集積回路である。本実施例では、ボロメータは、温度が変化すると抵抗が変化するマイクロブリッジ抵抗器である。入来する放射によって、マイクロブリッジの温度に変化が生じる。Siなどの他の半導体材料を用いることができるが、VOxが、多くの商用IR検出応用で用いられている、通常入手可能でありかつコスト効率的な材料である。
Claims (8)
- ゲッター構造体であって、
基板;
種材料で形成されている複数の核サイトであり、該種材料が前記基板の表面の上に配置されている、核サイト;及び
該核サイトから外方に突出する複数のゲッター材料の部材であり、前記種材料と当該ゲッター材料とが異なる材料である、ゲッター材料の部材;
を含む、ゲッター構造体。 - 前記種材料が所定表面積を有する前記基板の前記表面の領域上に配置され、
前記核サイトが、前記基板の前記表面の前記所定表面積の上に、1分子厚さ未満の平均高さを有する、
請求項1に記載されたゲッター構造体。 - 前記ゲッター材料がチタニウムである、請求項2に記載されたゲッター構造体。
- 真空パッケージされた電子デバイス構造体であって、
第1の基板;
該第1の基板に真空ボンディングされた第2の基板であり、当該第2の基板の表面が、その上に配置された種材料でできた複数の核サイトを有する、第2の基板;及び
前記核サイトから外方に突出する複数のゲッター材料の部材であり、前記種材料と当該ゲッター材料とが異なる材料である、ゲッター材料の部材;
を含む、電子デバイス構造体。 - 前記種材料が所定表面を有する前記第2の基板の前記表面の領域上に配置され、
前記核サイトが、前記第2の基板の前記表面の前記所定表面の上に、1分子厚さ未満の平均高さを有する、
請求項4に記載された電子デバイス構造体。 - 前記ゲッター材料がチタニウムである、請求項5に記載された電子デバイス構造体。
- ゲッター構造体を形成する方法であって、
所定領域を有する表面積上に複数の核サイトを形成する核サイト形成ステップであり、
前記所定領域の上に種材料を付着する付着工程を含み、
該付着工程は、前記付着された種材料の分子の複数の非連続クランプを生成するように選択したエネルギーレベルを用い、
前記複数の非連続クランプのうち、前記複数の核サイトの1つに対応する各クランプが、前記表面積上に前記種材料の1分子未満の平均厚さで生成される、
核サイト形成ステップ;
次に前記表面積上にゲッター材料を付着するステップであり、前記複数の核サイトから外方に突出する複数のゲッター材料を形成する、ゲッター材料付着ステップ;及び
前記のゲッター材料付着に先立ち、前記複数の核サイトを酸化するステップ;
を含み、
付着された前記種材料と次に付着された前記ゲッター材料とが、異なる付着技術を用いて形成される、
方法。 - 前記種材料の前記付着が、瞬間蒸着又は電子ビーム付着である、請求項7に記載された方法。
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US14/193,437 US9196556B2 (en) | 2014-02-28 | 2014-02-28 | Getter structure and method for forming such structure |
US14/193,437 | 2014-02-28 |
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JP2016554416A Expired - Fee Related JP6411534B2 (ja) | 2014-02-28 | 2015-02-20 | ゲッター構造体及び当該構造体の形成方法 |
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US (2) | US9196556B2 (ja) |
EP (1) | EP3111179B1 (ja) |
JP (2) | JP6411534B2 (ja) |
KR (2) | KR101891011B1 (ja) |
CN (1) | CN105993066B (ja) |
CA (1) | CA2932941C (ja) |
IL (1) | IL246363B (ja) |
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US9570321B1 (en) | 2015-10-20 | 2017-02-14 | Raytheon Company | Use of an external getter to reduce package pressure |
KR101812947B1 (ko) | 2016-05-16 | 2018-01-30 | 한국세라믹기술원 | 볼로미터용 저항 박막 제조방법, 이에 의해서 제조된 볼로미터용 저항 박막 및 볼로미터 제조방법 |
FR3083537B1 (fr) | 2018-07-06 | 2021-07-30 | Ulis | Boitier hermetique comportant un getter, composant integrant un tel boitier hermetique et procede de fabrication associe |
FR3109936B1 (fr) | 2020-05-07 | 2022-08-05 | Lynred | Procede de fabrication d’un microsysteme electromecanique et microsysteme electromecanique |
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2015
- 2015-02-20 CA CA2932941A patent/CA2932941C/en active Active
- 2015-02-20 EP EP15710030.6A patent/EP3111179B1/en active Active
- 2015-02-20 SG SG11201606749VA patent/SG11201606749VA/en unknown
- 2015-02-20 KR KR1020167016899A patent/KR101891011B1/ko active IP Right Grant
- 2015-02-20 CN CN201580006410.XA patent/CN105993066B/zh active Active
- 2015-02-20 WO PCT/US2015/016736 patent/WO2015130560A1/en active Application Filing
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- 2015-02-20 KR KR1020187022616A patent/KR101993107B1/ko active IP Right Grant
- 2015-10-16 US US14/885,610 patent/US20160040282A1/en not_active Abandoned
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Also Published As
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SG11201606749VA (en) | 2016-09-29 |
CA2932941A1 (en) | 2015-09-03 |
KR20160090367A (ko) | 2016-07-29 |
US9196556B2 (en) | 2015-11-24 |
CN105993066A (zh) | 2016-10-05 |
IL246363B (en) | 2019-02-28 |
US20160040282A1 (en) | 2016-02-11 |
JP2017506835A (ja) | 2017-03-09 |
EP3111179A1 (en) | 2017-01-04 |
US20150249042A1 (en) | 2015-09-03 |
WO2015130560A1 (en) | 2015-09-03 |
JP6703065B2 (ja) | 2020-06-03 |
EP3111179B1 (en) | 2020-07-22 |
JP6411534B2 (ja) | 2018-10-24 |
CA2932941C (en) | 2021-11-16 |
KR20180091954A (ko) | 2018-08-16 |
KR101993107B1 (ko) | 2019-06-25 |
CN105993066B (zh) | 2019-03-29 |
KR101891011B1 (ko) | 2018-08-22 |
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