SG11201606749VA - Getter structure and method for forming such structure - Google Patents

Getter structure and method for forming such structure

Info

Publication number
SG11201606749VA
SG11201606749VA SG11201606749VA SG11201606749VA SG11201606749VA SG 11201606749V A SG11201606749V A SG 11201606749VA SG 11201606749V A SG11201606749V A SG 11201606749VA SG 11201606749V A SG11201606749V A SG 11201606749VA SG 11201606749V A SG11201606749V A SG 11201606749VA
Authority
SG
Singapore
Prior art keywords
forming
getter
getter structure
Prior art date
Application number
SG11201606749VA
Inventor
Roland Gooch
Adam M Kennedy
Stephen H Black
Thomas Allan Kocian
Buu Diep
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of SG11201606749VA publication Critical patent/SG11201606749VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/10—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/20—Inorganic coating
    • B32B2255/205—Metallic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Physical Vapour Deposition (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SG11201606749VA 2014-02-28 2015-02-20 Getter structure and method for forming such structure SG11201606749VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/193,437 US9196556B2 (en) 2014-02-28 2014-02-28 Getter structure and method for forming such structure
PCT/US2015/016736 WO2015130560A1 (en) 2014-02-28 2015-02-20 Getter structure and method for forming such structure

Publications (1)

Publication Number Publication Date
SG11201606749VA true SG11201606749VA (en) 2016-09-29

Family

ID=52682906

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606749VA SG11201606749VA (en) 2014-02-28 2015-02-20 Getter structure and method for forming such structure

Country Status (9)

Country Link
US (2) US9196556B2 (en)
EP (1) EP3111179B1 (en)
JP (2) JP6411534B2 (en)
KR (2) KR101891011B1 (en)
CN (1) CN105993066B (en)
CA (1) CA2932941C (en)
IL (1) IL246363B (en)
SG (1) SG11201606749VA (en)
WO (1) WO2015130560A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570321B1 (en) 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
KR101812947B1 (en) 2016-05-16 2018-01-30 한국세라믹기술원 Method of manufacturing resistive film for bolometer, resistive film for bolometer by the same and method of manufacturing bolometer
FR3083537B1 (en) 2018-07-06 2021-07-30 Ulis HERMETIC CASE INCLUDING A GETTER, COMPONENT INTEGRATING SUCH A HERMETIC CASE AND ASSOCIATED MANUFACTURING PROCESS
FR3109936B1 (en) 2020-05-07 2022-08-05 Lynred METHOD FOR MANUFACTURING AN ELECTROMECHANICAL MICROSYSTEM AND ELECTROMECHANICAL MICROSYSTEM

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111049A (en) * 1990-12-21 1992-05-05 Santa Barbara Research Center Remote fired RF getter for use in metal infrared detector dewar
US5433639A (en) * 1993-08-18 1995-07-18 Santa Barbara Research Center Processing of vacuum-sealed dewar assembly
US5701008A (en) * 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package
JP3109485B2 (en) 1998-08-03 2000-11-13 日本電気株式会社 Vapor phase growth method of metal oxide dielectric film
US7315115B1 (en) 2000-10-27 2008-01-01 Canon Kabushiki Kaisha Light-emitting and electron-emitting devices having getter regions
JP2002370034A (en) * 2001-06-15 2002-12-24 Andes Denki Kk Oxide photocatalyst material using inorganic metallic compound and applied article thereof
US20060065327A1 (en) * 2003-02-07 2006-03-30 Advance Steel Technology Fine-grained martensitic stainless steel and method thereof
JP2006007119A (en) * 2004-06-25 2006-01-12 Andes Denki Kk Photocatalyst material, manufacturing method therefor and synthetic raw material solution
ITMI20041443A1 (en) * 2004-07-19 2004-10-19 Getters Spa PROCESS FOR THE PRODUCTION OF PLASMA SCREENS WITH DISTRIBUTED GETTER MATERIAL AND SCREENS SO OBTAINED
US8022432B2 (en) * 2005-08-19 2011-09-20 Lg Display Co., Ltd. Light-emitting device comprising conductive nanorods as transparent electrodes
US7407875B2 (en) * 2006-09-06 2008-08-05 International Business Machines Corporation Low resistance contact structure and fabrication thereof
WO2008071906A1 (en) 2006-12-15 2008-06-19 Bae Systems Plc Improvements relating to thin film getter devices
KR100959067B1 (en) * 2008-01-14 2010-05-20 전북대학교산학협력단 Zinc oxide nanostuctures based chemical sensors for hydrazine detection
DE102008060796B4 (en) 2008-11-18 2014-01-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for forming a micro-surface structure and for producing a micro-electro-mechanical component, micro-surface structure and microelectromechanical component having such a structure
EP2264765A1 (en) 2009-06-19 2010-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Housing for an infrared radiation micro device and method for fabricating such housing
JP5534398B2 (en) * 2009-08-25 2014-06-25 エスアイアイ・クリスタルテクノロジー株式会社 Package and package manufacturing method, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece
JP5945430B2 (en) * 2012-02-29 2016-07-05 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program
US20140175590A1 (en) 2012-12-20 2014-06-26 Raytheon Company Getter structure for wafer level vacuum packaged device

Also Published As

Publication number Publication date
CA2932941A1 (en) 2015-09-03
KR20160090367A (en) 2016-07-29
US9196556B2 (en) 2015-11-24
CN105993066A (en) 2016-10-05
IL246363B (en) 2019-02-28
US20160040282A1 (en) 2016-02-11
JP2017506835A (en) 2017-03-09
EP3111179A1 (en) 2017-01-04
US20150249042A1 (en) 2015-09-03
WO2015130560A1 (en) 2015-09-03
JP6703065B2 (en) 2020-06-03
EP3111179B1 (en) 2020-07-22
JP2019047125A (en) 2019-03-22
JP6411534B2 (en) 2018-10-24
CA2932941C (en) 2021-11-16
KR20180091954A (en) 2018-08-16
KR101993107B1 (en) 2019-06-25
CN105993066B (en) 2019-03-29
KR101891011B1 (en) 2018-08-22

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