JP2019031049A - 基板および半導体デバイスの製造方法 - Google Patents
基板および半導体デバイスの製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 22
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 abstract description 23
- 239000007788 liquid Substances 0.000 abstract description 17
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 230000001629 suppression Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 47
- 239000010703 silicon Substances 0.000 description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 239000010408 film Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 230000007547 defect Effects 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 150000003376 silicon Chemical class 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1635—Manufacturing processes dividing the wafer into individual chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Microelectronics & Electronic Packaging (AREA)
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- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
メンブレン膜63としての窒化シリコンが成膜されたウエハを用い、シリコン基板1のエッチングパターン及びダミーパターンに、レーザーにより先導孔を形成した。続いて、レーザー加工されたシリコン基板1をTMAH22重量部のエッチング液を用い、83℃でウェットエッチング処理することで、インク供給口68となる有効チップ開口3及びダミー開口2を形成した。このシリコン基板1におけるメンブレン不良率は0%であった。
実施例1と同様の方法を用い、ダミーパターン形状とエッチングパターン形状とを異ならせて、インク供給口68となる有効チップ開口3及びダミー開口2を形成した。このシリコン基板1におけるメンブレン不良率は0%であった。
実施例1と同様の方法を用い、ダミーパターンの長手方向とエッチングパターンの長手方向とを異ならせて、インク供給口68となる有効チップ開口3及びダミー開口2を形成した。このシリコン基板1におけるメンブレン不良率は0%であった。
実施例1と同様の方法を用い、矢印X方向における有効チップ開口3とダミー開口2とを合わせた開口率と、矢印Y方向における有効チップ開口3とダミー開口2とを合わせた開口率との比が、1となるように、有効チップ開口3とダミー開口2とを配置した。このシリコン基板1におけるメンブレン不良率は0%であった。
実施例1と同様の方法を用い、矢印X方向における有効チップ開口3とダミー開口2とを合わせた開口率と、矢印Y方向における有効チップ開口3とダミー開口2とを合わせた開口率との比が、0.8となるように、有効チップ開口3とダミー開口2とを配置した。このシリコン基板1におけるメンブレン不良率は0%であった。
実施例1と同様の方法を用い、ダミーパターンを配置しないでシリコン基板1のエッチングを行った。この場合、ウェットエッチングによるインク供給口形成時にメンブレン不良が発生し、その不良率は6%であった。
実施例1と同様の方法を用い、矢印X方向における有効チップ開口3とダミー開口2とを合わせた開口率と、矢印Y方向における有効チップ開口3とダミー開口2とを合わせた開口率との比が、0.75となるように、有効チップ開口3とダミー開口2とを配置した。この場合、ウェットエッチングによるインク供給口形成時にメンブレン不良が発生し、その不良率は3%であった。
2 ダミー開口
3 有効チップ開口
63 メンブレン膜
68 インク供給口
69 吐出口
Claims (11)
- ウエハに膜を成膜する成膜工程と、
前記ウエハの所定領域に、前記ウエハを貫通する第1開口を形成する第1開口形成工程と、
前記ウエハの前記所定領域と前記ウエハの外周端との間の領域である所定外領域に、前記所定外領域の形状に応じ、配置および形状の少なくとも一方を有した、前記ウエハを貫通する第2開口を形成する第2開口形成工程と、
前記ウエハを、前記第1開口を備えた基板に切断する切断工程と、
を有することを特徴とする基板の製造方法。 - 前記第2開口形成工程は、前記所定外領域の面積に基づいた数量の、前記第2開口を形成する請求項1に記載の基板の製造方法。
- 前記第1開口形成工程と前記第2開口形成工程とは、エッチングによって開口を形成する工程である請求項1または請求項2に記載の基板の製造方法。
- 前記第1開口形成工程および前記第2開口形成工程では、前記ウエハの中心に対して点対称に前記第1開口および前記第2開口を形成する請求項1ないし請求項3のいずれか1項に記載の基板の製造方法。
- 前記第1開口形成工程では、前記第1開口の形状を長方形に形成する請求項1ないし請求項4のいずれか1項に記載の基板の製造方法。
- 前記第1開口の長手方向における前記第1開口と前記第2開口とを合わせた開口率と、前記第1開口の短手方向における前記第1開口と前記第2開口とを合わせた開口率との比を、0.8以上1.0以下とする請求項5に記載の基板の製造方法。
- 前記第2開口形成工程では、前記第2開口の形状を長方形に形成する請求項5または請求項6に記載の基板の製造方法。
- 前記第1開口の長手方向と前記第2開口の長手方向とは、異なる方向である請求項7に記載の基板の製造方法。
- 前記第2開口形成工程では、前記第2開口を複数の異なる形状に形成する請求項1ないし請求項6のいずれか1項に記載の基板の製造方法。
- 前記第2開口形成工程は、前記第2開口を多角形に形成する請求項9に記載の基板の製造方法。
- ウエハに膜を成膜する成膜工程と、
前記ウエハの所定領域に、前記ウエハを貫通する第1開口を形成する第1開口形成工程と、を有し、
前記ウエハの前記所定領域と前記ウエハの外周端との間の領域である所定外領域に、前記所定外領域の形状に応じた、配置および形状の少なくとも一方を有した、前記ウエハを貫通する第2開口を形成する第2開口形成工程を更に有することを特徴とする半導体デバイスの製造方法。
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JP2017154555A JP7076966B2 (ja) | 2017-08-09 | 2017-08-09 | 基板および半導体デバイスの製造方法 |
US16/052,857 US10861703B2 (en) | 2017-08-09 | 2018-08-02 | Method of manufacturing substrate and semiconductor device |
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JP2017154555A JP7076966B2 (ja) | 2017-08-09 | 2017-08-09 | 基板および半導体デバイスの製造方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5196378A (en) * | 1987-12-17 | 1993-03-23 | Texas Instruments Incorporated | Method of fabricating an integrated circuit having active regions near a die edge |
JP2005271215A (ja) * | 2004-03-22 | 2005-10-06 | Seiko Epson Corp | シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法並びに液体噴射ヘッド |
JP2007245588A (ja) * | 2006-03-16 | 2007-09-27 | Seiko Epson Corp | デバイス用基板の製造方法 |
JP2008246833A (ja) * | 2007-03-30 | 2008-10-16 | Seiko Epson Corp | シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法 |
JP2010239130A (ja) * | 2009-03-11 | 2010-10-21 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法、電子デバイス、および電子デバイスの製造方法 |
JP2014213485A (ja) * | 2013-04-23 | 2014-11-17 | キヤノン株式会社 | 基板の加工方法 |
JP2015152832A (ja) * | 2014-02-17 | 2015-08-24 | 株式会社リコー | フォトマスク、フォトマスクの生産装置、フォトマスクの生産方法、フォトマスクの生産プログラム、ウエハ、液体吐出ヘッド及び画像形成装置 |
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JP2007250761A (ja) | 2006-03-15 | 2007-09-27 | Canon Inc | 半導体デバイスの製造方法 |
JP6719911B2 (ja) | 2016-01-19 | 2020-07-08 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
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- 2017-08-09 JP JP2017154555A patent/JP7076966B2/ja active Active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5196378A (en) * | 1987-12-17 | 1993-03-23 | Texas Instruments Incorporated | Method of fabricating an integrated circuit having active regions near a die edge |
JP2005271215A (ja) * | 2004-03-22 | 2005-10-06 | Seiko Epson Corp | シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法並びに液体噴射ヘッド |
JP2007245588A (ja) * | 2006-03-16 | 2007-09-27 | Seiko Epson Corp | デバイス用基板の製造方法 |
JP2008246833A (ja) * | 2007-03-30 | 2008-10-16 | Seiko Epson Corp | シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法 |
JP2010239130A (ja) * | 2009-03-11 | 2010-10-21 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法、電子デバイス、および電子デバイスの製造方法 |
JP2014213485A (ja) * | 2013-04-23 | 2014-11-17 | キヤノン株式会社 | 基板の加工方法 |
JP2015152832A (ja) * | 2014-02-17 | 2015-08-24 | 株式会社リコー | フォトマスク、フォトマスクの生産装置、フォトマスクの生産方法、フォトマスクの生産プログラム、ウエハ、液体吐出ヘッド及び画像形成装置 |
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US10861703B2 (en) | 2020-12-08 |
JP7076966B2 (ja) | 2022-05-30 |
US20190051533A1 (en) | 2019-02-14 |
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