JP2019024134A - 接合されたmems波長可変ミラーのvcsel掃引光源を備えたoctシステム - Google Patents
接合されたmems波長可変ミラーのvcsel掃引光源を備えたoctシステム Download PDFInfo
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Abstract
Description
なお、本発明は、実施の態様として以下の内容を含む。
〔態様1〕
光を増幅する活性層を有する活性領域基板と、
前記活性領域基板に取り付けられた光学メンブレン素子と、
を備える、MEMS波長可変VCSEL。
〔態様2〕
態様1に記載のMEMS波長可変VCSELにおいて、さらに、
前記活性領域基板を前記光学メンブレン素子から離隔させるスペーサ素子、
を備える、MEMS波長可変VCSEL。
〔態様3〕
態様1に記載のMEMS波長可変VCSELにおいて、前記活性領域基板が、さらに、リアミラーを有する、MEMS波長可変VCSEL。
〔態様4〕
態様3に記載のMEMS波長可変VCSELにおいて、前記リアミラーが、前記活性領域基板内の層である、MEMS波長可変VCSEL。
〔態様5〕
態様3に記載のMEMS波長可変VCSELにおいて、前記リアミラーが、前記活性領域基板に形成された光ポートに付着されている、MEMS波長可変VCSEL。
〔態様6〕
態様3に記載のMEMS波長可変VCSELにおいて、前記リアミラーが、前記活性領域基板によって増幅された光の波長は反射し、ポンプレーザによって生成された光の波長は透過するダイクロイックミラーである、MEMS波長可変VCSEL。
〔態様7〕
態様1に記載のMEMS波長可変VCSELにおいて、前記光学メンブレン素子が、基板層、メンブレンがパターン形成された素子層、および介在する絶縁層を有する、MEMS波長可変VCSEL。
〔態様8〕
態様7に記載のMEMS波長可変VCSELにおいて、前記絶縁層が、静電キャビティを画定する、MEMS波長可変VCSEL。
〔態様9〕
態様1に記載のMEMS波長可変VCSELにおいて、前記光学メンブレン素子の光学メンブレンが、前記活性領域基板から離れる方向に撓み変形する、MEMS波長可変VCSEL。
〔態様10〕
態様1に記載のMEMS波長可変VCSELにおいて、前記光学メンブレン素子の光学メンブレンが、湾曲状のミラー構造を有する、MEMS波長可変VCSEL。
〔態様11〕
MEMS波長可変VCSELを作製する方法であって、
光を増幅する活性層を有する活性領域基板を用意する工程と、
前記活性領域基板に光学メンブレン素子を接合する工程と、
を含む、方法。
〔態様12〕
態様11に記載の方法において、前記活性領域基板に前記光学メンブレン素子を接合する工程が、前記光学メンブレン素子を前記活性領域基板に熱圧着することを含む、方法。
〔態様13〕
態様11に記載の方法において、前記活性領域基板に前記光学メンブレン素子を接合する工程が、前記光学メンブレン素子を前記活性領域基板にはんだ接合することを含む、方法。
〔態様14〕
VCSEL掃引光源が集積化されたシステムであって、
光学ベンチと、
前記光学ベンチに設けられ、当該光学ベンチの上面と平行に伝播する掃引光信号を放射するMEMS波長可変VCSELと、
を備える、システム。
〔態様15〕
態様14に記載のシステムにおいて、さらに、
前記光学ベンチに固定され、前記掃引光信号を光ファイバに結合する集束レンズ、
を備える、システム。
〔態様16〕
態様14に記載のシステムにおいて、さらに、
前記光学ベンチを収容する、密閉パッケージ、
を備える、システム。
〔態様17〕
態様16に記載のシステムにおいて、さらに、
前記光学ベンチと前記密閉パッケージ内部との間に、当該光学ベンチの温度を制御するように設けられた熱電冷却器、
を備える、システム。
〔態様18〕
態様14に記載のシステムにおいて、さらに、
前記光学ベンチに設けられ、前記MEMS波長可変VCSEL内の活性層を光学的に励起するポンプ光を生成するレーザポンプ、
を備える、システム。
〔態様19〕
態様18に記載のシステムにおいて、さらに、
前記レーザポンプと前記MEMS波長可変VCSELとの間に位置し、戻り反射が前記レーザポンプに入るのを防止するアイソレータ、
を備える、システム。
〔態様20〕
態様18に記載のシステムにおいて、前記MEMS波長可変VCSELの一方の側面から前記掃引光信号が取り出され、当該MEMS波長可変VCSELの他方の側面に前記ポンプ光が結合する、システム。
〔態様21〕
態様18に記載のシステムにおいて、前記掃引光信号が、前記MEMS波長可変VCSELの側面うち、前記ポンプ光が結合する側面と同一の側面から取り出される、システム。
〔態様22〕
態様14に記載のシステムにおいて、さらに、
前記光学ベンチに設けられ、前記掃引光信号を増幅する半導体光増幅器、
を備える、システム。
〔態様23〕
態様22に記載のシステムにおいて、さらに、
前記半導体光増幅器の両側のそれぞれに1つずつ位置する、2つのアイソレータ、
を備える、システム。
〔態様24〕
態様23に記載のシステムにおいて、前記半導体光増幅器から、増幅された前記掃引光信号が戻って、前記MEMS波長可変VCSELを通って伝播する、システム。
〔態様25〕
態様23に記載のシステムにおいて、さらに、
前記半導体光増幅器からの増幅された前記掃引光信号を、前記MEMS波長可変VCSELに結合するように導く偏光ビームスプリッタ、
を備える、システム。
〔態様26〕
態様14に記載のシステムにおいて、前記MEMS波長可変VCSELが、電気的に励起される、システム。
〔態様27〕
掃引光信号を参照アームと試料アームとに分割し、前記参照アームから戻る光信号と前記試料アームから戻る光信号とを結合して干渉信号を生成する干渉計と、
光を増幅する活性層を有する活性領域基板および当該活性領域基板に取り付けられた光学メンブレン素子を含み、前記掃引光信号を生成するMEMS波長可変VCSELと、
前記干渉信号を検出する検出システムと、
を備える、光コヒーレンス分析システム。
Claims (27)
- 光を増幅する活性層を有する活性領域基板と、
前記活性領域基板に取り付けられた光学メンブレン素子と、
を備える、MEMS波長可変VCSEL。 - 請求項1に記載のMEMS波長可変VCSELにおいて、さらに、
前記活性領域基板を前記光学メンブレン素子から離隔させるスペーサ素子、
を備える、MEMS波長可変VCSEL。 - 請求項1に記載のMEMS波長可変VCSELにおいて、前記活性領域基板が、さらに、リアミラーを有する、MEMS波長可変VCSEL。
- 請求項3に記載のMEMS波長可変VCSELにおいて、前記リアミラーが、前記活性領域基板内の層である、MEMS波長可変VCSEL。
- 請求項3に記載のMEMS波長可変VCSELにおいて、前記リアミラーが、前記活性領域基板に形成された光ポートに付着されている、MEMS波長可変VCSEL。
- 請求項3に記載のMEMS波長可変VCSELにおいて、前記リアミラーが、前記活性領域基板によって増幅された光の波長は反射し、ポンプレーザによって生成された光の波長は透過するダイクロイックミラーである、MEMS波長可変VCSEL。
- 請求項1に記載のMEMS波長可変VCSELにおいて、前記光学メンブレン素子が、基板層、メンブレンがパターン形成された素子層、および介在する絶縁層を有する、MEMS波長可変VCSEL。
- 請求項7に記載のMEMS波長可変VCSELにおいて、前記絶縁層が、静電キャビティを画定する、MEMS波長可変VCSEL。
- 請求項1に記載のMEMS波長可変VCSELにおいて、前記光学メンブレン素子の光学メンブレンが、前記活性領域基板から離れる方向に撓み変形する、MEMS波長可変VCSEL。
- 請求項1に記載のMEMS波長可変VCSELにおいて、前記光学メンブレン素子の光学メンブレンが、湾曲状のミラー構造を有する、MEMS波長可変VCSEL。
- MEMS波長可変VCSELを作製する方法であって、
光を増幅する活性層を有する活性領域基板を用意する工程と、
前記活性領域基板に光学メンブレン素子を接合する工程と、
を含む、方法。 - 請求項11に記載の方法において、前記活性領域基板に前記光学メンブレン素子を接合する工程が、前記光学メンブレン素子を前記活性領域基板に熱圧着することを含む、方法。
- 請求項11に記載の方法において、前記活性領域基板に前記光学メンブレン素子を接合する工程が、前記光学メンブレン素子を前記活性領域基板にはんだ接合することを含む、方法。
- VCSEL掃引光源が集積化されたシステムであって、
光学ベンチと、
前記光学ベンチに設けられ、当該光学ベンチの上面と平行に伝播する掃引光信号を放射するMEMS波長可変VCSELと、
を備える、システム。 - 請求項14に記載のシステムにおいて、さらに、
前記光学ベンチに固定され、前記掃引光信号を光ファイバに結合する集束レンズ、
を備える、システム。 - 請求項14に記載のシステムにおいて、さらに、
前記光学ベンチを収容する、密閉パッケージ、
を備える、システム。 - 請求項16に記載のシステムにおいて、さらに、
前記光学ベンチと前記密閉パッケージ内部との間に、当該光学ベンチの温度を制御するように設けられた熱電冷却器、
を備える、システム。 - 請求項14に記載のシステムにおいて、さらに、
前記光学ベンチに設けられ、前記MEMS波長可変VCSEL内の活性層を光学的に励起するポンプ光を生成するレーザポンプ、
を備える、システム。 - 請求項18に記載のシステムにおいて、さらに、
前記レーザポンプと前記MEMS波長可変VCSELとの間に位置し、戻り反射が前記レーザポンプに入るのを防止するアイソレータ、
を備える、システム。 - 請求項18に記載のシステムにおいて、前記MEMS波長可変VCSELの一方の側面から前記掃引光信号が取り出され、当該MEMS波長可変VCSELの他方の側面に前記ポンプ光が結合する、システム。
- 請求項18に記載のシステムにおいて、前記掃引光信号が、前記MEMS波長可変VCSELの側面うち、前記ポンプ光が結合する側面と同一の側面から取り出される、システム。
- 請求項14に記載のシステムにおいて、さらに、
前記光学ベンチに設けられ、前記掃引光信号を増幅する半導体光増幅器、
を備える、システム。 - 請求項22に記載のシステムにおいて、さらに、
前記半導体光増幅器の両側のそれぞれに1つずつ位置する、2つのアイソレータ、
を備える、システム。 - 請求項23に記載のシステムにおいて、前記半導体光増幅器から、増幅された前記掃引光信号が戻って、前記MEMS波長可変VCSELを通って伝播する、システム。
- 請求項23に記載のシステムにおいて、さらに、
前記半導体光増幅器からの増幅された前記掃引光信号を、前記MEMS波長可変VCSELに結合するように導く偏光ビームスプリッタ、
を備える、システム。 - 請求項14に記載のシステムにおいて、前記MEMS波長可変VCSELが、電気的に励起される、システム。
- 掃引光信号を参照アームと試料アームとに分割し、前記参照アームから戻る光信号と前記試料アームから戻る光信号とを結合して干渉信号を生成する干渉計と、
光を増幅する活性層を有する活性領域基板および当該活性領域基板に取り付けられた光学メンブレン素子を含み、前記掃引光信号を生成するMEMS波長可変VCSELと、
前記干渉信号を検出する検出システムと、
を備える、光コヒーレンス分析システム。
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