JP2019007910A - 結晶解析装置及び結晶解析方法 - Google Patents

結晶解析装置及び結晶解析方法 Download PDF

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Publication number
JP2019007910A
JP2019007910A JP2017126112A JP2017126112A JP2019007910A JP 2019007910 A JP2019007910 A JP 2019007910A JP 2017126112 A JP2017126112 A JP 2017126112A JP 2017126112 A JP2017126112 A JP 2017126112A JP 2019007910 A JP2019007910 A JP 2019007910A
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JP
Japan
Prior art keywords
crystal
image
moire
analysis
defect
Prior art date
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Pending
Application number
JP2017126112A
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English (en)
Japanese (ja)
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JP2019007910A5 (enExample
Inventor
小寺　雅子
Masako Kodera
雅子 小寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2017126112A priority Critical patent/JP2019007910A/ja
Priority to US15/905,326 priority patent/US10692206B2/en
Publication of JP2019007910A publication Critical patent/JP2019007910A/ja
Publication of JP2019007910A5 publication Critical patent/JP2019007910A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/40—Analysis of texture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2017126112A 2017-06-28 2017-06-28 結晶解析装置及び結晶解析方法 Pending JP2019007910A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017126112A JP2019007910A (ja) 2017-06-28 2017-06-28 結晶解析装置及び結晶解析方法
US15/905,326 US10692206B2 (en) 2017-06-28 2018-02-26 Crystal analysis apparatus and crystal analysis method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017126112A JP2019007910A (ja) 2017-06-28 2017-06-28 結晶解析装置及び結晶解析方法

Publications (2)

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JP2019007910A true JP2019007910A (ja) 2019-01-17
JP2019007910A5 JP2019007910A5 (enExample) 2019-10-31

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JP (1) JP2019007910A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111948235B (zh) * 2020-08-07 2022-09-20 广西大学 测量半极性面ⅲ族氮化物薄膜缺陷密度的方法及其应用
US20240062356A1 (en) * 2020-12-21 2024-02-22 Asml Netherlands B.V. Data-driven prediction and identification of failure modes based on wafer-level analysis and root cause analysis for semiconductor processing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5483571A (en) * 1994-05-31 1996-01-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Radiographic moire
JP2000065762A (ja) * 1998-08-21 2000-03-03 Nec Corp 結晶歪み測定方法、結晶歪み測定装置及び記録媒体
WO2007142024A1 (ja) * 2006-06-09 2007-12-13 Sumco Corporation 単結晶シリコンウェーハのｃｏｐ評価方法
JP2009210309A (ja) * 2008-03-03 2009-09-17 Hitachi High-Technologies Corp 欠陥検査装置およびこの欠陥検査装置に用いるパラメータ調整方法。
JP2009264852A (ja) * 2008-04-23 2009-11-12 Wakayama Univ 格子画像の位相解析方法およびそれを用いた物体の変位測定方法ならびに物体の形状測定方法
JP2011069734A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 結晶格子モアレパターン取得方法および走査型顕微鏡
JP2015142079A (ja) * 2014-01-30 2015-08-03 シャープ株式会社 光電変換装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4402004B2 (ja) * 2005-04-15 2010-01-20 株式会社日立ハイテクノロジーズ 検査装置
JP5562243B2 (ja) * 2007-09-25 2014-07-30 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク ナノスケール変形を測定する方法、デバイス及びシステム
US20100158392A1 (en) * 2008-09-22 2010-06-24 Brigham Young University Systems and Methods for Determining Crystallographic Characteristics of a Material
JP2014153177A (ja) 2013-02-08 2014-08-25 Evolve Technology Co Ltd 検査装置および検査方法
WO2015008404A1 (ja) 2013-07-18 2015-01-22 独立行政法人産業技術総合研究所 規則性模様による変位分布のための測定方法、装置およびそのプログラム
JP2014033215A (ja) 2013-09-18 2014-02-20 Nikon Corp 歪計測方法
JP6472675B2 (ja) 2015-02-05 2019-02-20 国立研究開発法人産業技術総合研究所 二次モアレ縞による顕微鏡走査ゆがみの影響を受けない変形測定方法
US9564494B1 (en) * 2015-11-18 2017-02-07 International Business Machines Corporation Enhanced defect reduction for heteroepitaxy by seed shape engineering

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5483571A (en) * 1994-05-31 1996-01-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Radiographic moire
JP2000065762A (ja) * 1998-08-21 2000-03-03 Nec Corp 結晶歪み測定方法、結晶歪み測定装置及び記録媒体
WO2007142024A1 (ja) * 2006-06-09 2007-12-13 Sumco Corporation 単結晶シリコンウェーハのｃｏｐ評価方法
JP2009210309A (ja) * 2008-03-03 2009-09-17 Hitachi High-Technologies Corp 欠陥検査装置およびこの欠陥検査装置に用いるパラメータ調整方法。
JP2009264852A (ja) * 2008-04-23 2009-11-12 Wakayama Univ 格子画像の位相解析方法およびそれを用いた物体の変位測定方法ならびに物体の形状測定方法
JP2011069734A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 結晶格子モアレパターン取得方法および走査型顕微鏡
JP2015142079A (ja) * 2014-01-30 2015-08-03 シャープ株式会社 光電変換装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
WANG, Q. 外２名: ""Developments and Applications of Moire Techniques for Deformation Measurement, Structure Character", RECENT PATENTS ON MATERIALS SCIENCE, vol. Volume 8, Number 3, JPN6020026689, 1 September 2015 (2015-09-01), pages 188 - 207, XP055519570, ISSN: 0004448292 *
清水嘉重郎: ""モレア稿の応用"", 日本物理学会誌, vol. Volume 19, Number 10, JPN6020026691, 5 October 1964 (1964-10-05), pages 650 - 652, ISSN: 0004448293 *

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US10692206B2 (en) 2020-06-23
US20190005635A1 (en) 2019-01-03

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