JP2018527763A - PID- and dust-resistant crystalline silicon solar cell module - Google Patents

PID- and dust-resistant crystalline silicon solar cell module Download PDF

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JP2018527763A
JP2018527763A JP2018533990A JP2018533990A JP2018527763A JP 2018527763 A JP2018527763 A JP 2018527763A JP 2018533990 A JP2018533990 A JP 2018533990A JP 2018533990 A JP2018533990 A JP 2018533990A JP 2018527763 A JP2018527763 A JP 2018527763A
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solar cell
pid
frame
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crystalline silicon
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志春 倪
志春 倪
青竹 魏
青竹 魏
霞 蔡
霞 蔡
志翔 許
志翔 許
国清 陳
国清 陳
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Suzhou Talesun Solar Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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    • H02S30/10—Frame structures
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールであって、太陽電池ストリング（１）と、太陽電池ストリングの両側に積層されたポリオレフィン層（２）と、そのうちの一方のポリオレフィン層上に積層された前板ガラス層（３）と、他方のポリオレフィン層上に積層された裏板（４）と、裏板及び前板ガラス層を挟み込むためのフレーム（６）と、裏板上に取り付けられ、太陽電池ストリングと外部回線とを接続するための接続箱（５）と、を含む。太陽電池ストリングの両側にポリオレフィン層を設置することにより、水蒸気透過率を低下させ、高電圧の状態でパッケージ材料に現れるイオンマイグレーション現象を回避し、モジュールの耐ＰＩＤ性能を向上させ、モジュールの寿命期間にはＰＩＤ現象が発生しないようにすることができる。
【選択図】図１A PID- and dust-resistant crystalline silicon solar cell module comprising a solar cell string (1), a polyolefin layer (2) laminated on both sides of the solar cell string, and one of the polyolefin layers. A front plate glass layer (3), a back plate (4) laminated on the other polyolefin layer, a frame (6) for sandwiching the back plate and the front plate glass layer, and a solar cell string attached on the back plate And a connection box (5) for connecting an external line. By installing a polyolefin layer on both sides of the solar cell string, the water vapor transmission rate is reduced, the ion migration phenomenon that appears in the package material in a high voltage state is avoided, the PID resistance performance of the module is improved, and the lifetime of the module Can prevent the PID phenomenon from occurring.
[Selection] Figure 1

Description

本出願は、２０１５年９月２３日に中国特許庁に提出された、出願番号が２０１５１０６１１２５９．４であり、発明の名称が「耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュール」である中国特許出願の優先権を主張するものであり、その全体が引用により本出願に組み込まれる。   This application is a Chinese patent application filed with the Chinese Patent Office on September 23, 2015, whose application number is 201510611259.4 and whose title is "PID- and dust-resistant crystalline silicon solar cell module" The entirety of which is hereby incorporated by reference in its entirety.

本発明は、光起電力太陽電池分野に属し、具体的には、耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールに関する。   The present invention belongs to the photovoltaic solar cell field, and specifically relates to a PID-resistant and dust-resistant crystalline silicon solar cell module.

太陽エネルギーは、人類にとって無尽蔵の再生可能なものであって、クリーンエネルギーにも属しており、いずれの環境汚染も生じない。太陽エネルギーの効果的な利用において、太陽光発電の利用は、近年、発展が最も速く、最も活力のある研究分野である。結晶シリコン太陽電池は、主に半導体材料を基礎とし、その作動原理が、光電材料で光エネルギーを吸収した後に光電変換反応を発生して光エネルギーを直接電気エネルギーに転換する装置である。   Solar energy is inexhaustible and renewable for mankind and belongs to clean energy and does not cause any environmental pollution. In the effective use of solar energy, the use of photovoltaic power generation is the fastest developing and most active research field in recent years. A crystalline silicon solar cell is a device that is mainly based on a semiconductor material, and whose operation principle is to convert a light energy directly into an electric energy by generating a photoelectric conversion reaction after the light energy is absorbed by the photoelectric material.

現在、通常の結晶シリコン太陽モジュールの主な構造は、強化ガラス層、エチレン-酢酸ビニルブロック共重合体、電池片、裏板及びアルミニウム合金フレームであり、モジュール全体の重量が約２０ｋｇ程度である。近年の研究により、結晶シリコン光起電力モジュールにおける回路とその接地金属フレームの間にある高電圧は、モジュールの光起電力性能の持続減衰を引き起こすことがある。そして、通常の耐ＰＩＤ（Ｐｏｔｅｎｔｉａｌ Ｉｎｄｕｃｅｄ Ｄｅｇｒａｄａｔｉｏｎ、即ち電位誘発減衰）のモジュールは、３〜５年の使用後に、モジュールパワーの減衰が顕著であり、モジュールの寿命期間にパワーが減衰し過ぎ、モジュール寿命が短くなるため、発電所の発電量は明らかに低下してしまっていた。現在の通常の結晶シリコンモジュール裏板には、一般的に両面コーティング型の裏板を採用し、その砂落ち砂テストが一般的に５Ｌ／μｍ程度であり、耐風塵性能が弱く、且つ普通のフッ素裏板が回収される場合、フッ化物が発生し、環境に対してフッ素汚染のリスクがある。   At present, the main structure of a normal crystalline silicon solar module is a tempered glass layer, an ethylene-vinyl acetate block copolymer, a battery piece, a back plate and an aluminum alloy frame, and the total weight of the module is about 20 kg. Recent studies have shown that high voltages between the circuit in a crystalline silicon photovoltaic module and its ground metal frame can cause sustained attenuation of the photovoltaic performance of the module. The normal PID (Potential Induced Degradation) module has a significant module power attenuation after 3 to 5 years of use, and the power is excessively attenuated during the module lifetime. As a result, the amount of power generated by the power plant was clearly reduced. The current normal crystalline silicon module back plate generally employs a double-sided coating type back plate, and its sand falling sand test is generally about 5 L / μm, the dust resistance performance is weak, and the normal When the fluorine backing plate is collected, fluoride is generated and there is a risk of fluorine contamination to the environment.

本発明は、従来技術の不足を克服するために、耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールを提供することを目的とする。   An object of the present invention is to provide a PID-resistant and dust-resistant crystalline silicon solar cell module in order to overcome deficiencies in the prior art.

上記目的を達成するために、本発明が採用する技術案は、耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールであって、太陽電池ストリングと、前記太陽電池ストリングの両側に積層されたポリオレフィン層と、そのうちの一方の前記ポリオレフィン層上に積層された前板ガラス層と、他方の前記ポリオレフィン層上に積層された裏板と、前記裏板及び前記前板ガラス層を挟み込むためのフレームと、前記裏板上に取り付けられ、前記太陽電池ストリングと外部回線とを接続するための接続箱と、を含む。   In order to achieve the above object, the technical proposal adopted by the present invention is a PID-resistant and dust-resistant crystalline silicon solar cell module, which includes a solar cell string and a polyolefin layer laminated on both sides of the solar cell string. A front glass layer laminated on one of the polyolefin layers, a back board laminated on the other polyolefin layer, a frame for sandwiching the back board and the front glass layer, and the back board And a junction box for connecting the solar cell string and an external line.

好ましくは、前記裏板の材質はポリアミドである。   Preferably, the back plate is made of polyamide.

さらに、前記太陽電池ストリングは、少なくとも２つの太陽電池片が少なくとも１つの溶接リボンにより直列に接続されてなる。   Furthermore, the solar cell string is formed by connecting at least two solar cell pieces in series by at least one welding ribbon.

さらに、前記フレームは、枠体と、前記枠体と一体成型し且つその内側面に位置する係合枠とを含み、前記係合枠は３つあり、それぞれ前記枠体内側面の頂部、底部及び中間部に形成されており、前記枠体内側面の頂部に形成される係合枠を第１係合枠と定義し、前記枠体内側面の中間部に形成される係合枠を第２係合枠と定義し、前記枠体内側面の底部に形成される係合枠を第３係合枠と定義し、前記第１係合枠と前記第２係合枠との間に前記前板ガラス層及び前記裏板が介在されている。   Further, the frame includes a frame body and an engagement frame that is integrally formed with the frame body and located on an inner surface thereof, and there are three engagement frames, and each of the top, bottom, and An engagement frame formed at an intermediate portion and formed at the top of the side surface of the frame body is defined as a first engagement frame, and an engagement frame formed at the intermediate portion of the side surface of the frame body is defined as a second engagement frame. An engagement frame formed at the bottom of the side surface of the frame body is defined as a third engagement frame, and the front glass layer and the second engagement frame are defined between the first engagement frame and the second engagement frame. The back plate is interposed.

好ましくは、前記ポリオレフィン層の厚さは０．２５〜０．８ｍｍである。   Preferably, the polyolefin layer has a thickness of 0.25 to 0.8 mm.

上記技術案の適用により、本発明は従来技術に比べて下記の利点を有する。即ち、本発明に係る耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールは、太陽電池ストリングの両側にポリオレフィン層を設置することにより、水蒸気透過率を低下させ、高電圧の状態でパッケージ材料に現れるイオンマイグレーション現象を回避し、モジュールの耐ＰＩＤ性能を向上させ、モジュールの寿命期間にはＰＩＤ現象が発生しないようにすることができる。   By applying the above technical solution, the present invention has the following advantages over the prior art. That is, the PID-resistant and dust-resistant crystalline silicon solar cell module according to the present invention reduces the water vapor transmission rate by installing a polyolefin layer on both sides of the solar cell string, and the ions appearing in the package material in a high voltage state. It is possible to avoid the migration phenomenon, improve the PID resistance performance of the module, and prevent the PID phenomenon from occurring during the lifetime of the module.

本発明に係る耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールの構造概略図である。1 is a schematic structural view of a PID-resistant and dust-resistant crystalline silicon solar cell module according to the present invention.

以下、本発明の好ましい実施形態を図面と関連付けて詳しく説明する。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

図１に示すような耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールは、主に太陽電池ストリング１、ポリオレフィン層２、前板ガラス層３、裏板４、接続箱５及びフレーム６を含む。   The PID-resistant and dust-resistant crystalline silicon solar cell module as shown in FIG. 1 mainly includes a solar cell string 1, a polyolefin layer 2, a front glass layer 3, a back plate 4, a junction box 5 and a frame 6.

なお、太陽電池ストリング１は、少なくとも２つの太陽電池片１１が少なくとも１つの溶接リボン１２により直列に接続されてなり、溶接リボン１２が１つの太陽電池片１１の正面から他の太陽電池片１１の裏面に接続される。ポリオレフィン層２は二層あり、それぞれ太陽電池ストリング１の両側に積層され、必要に応じて熱硬型又は熱可塑型のものを採用可能であり、厚さが０．２５〜０．８ｍｍであることが好ましく、その具体的なパラメータについて、波長が３８２〜１１００ｎｍ、可視光透過率が＞９０％、横収縮率が≦２％、縦収縮率が≦５％、架橋度が６０〜８０％、吸水率が≦０．０１％である。前板ガラス層３は、そのうちの一方のポリオレフィン層２上に積層され、裏板４は、他方のポリオレフィン層２上に積層される。フレーム６は、裏板４及び前板ガラス層３を挟み込むためのものであり、枠体６１と、枠体６１と一体成型し且つその内側面に位置する少なくとも２つの係合枠を含み、係合枠の間に前板ガラス層３及び裏板４が介在されている。接続箱５は裏板４上に取り付けられ、太陽電池ストリング１と外部回線とを接続するためのものであり、バックコンタクト式の普通の接続箱を採用すればよい。このような太陽電池モジュールは、太陽電池片の水蒸気透過率を低下させ、高電圧の状態でパッケージ材料（ポリオレフィン）に現れるイオンマイグレーション現象を回避することにより、モジュールの耐ＰＩＤ性能を向上させ、モジュールの寿命期間にはＰＩＤ現象が発生しないような予想できない効果がある。   The solar cell string 1 includes at least two solar cell pieces 11 connected in series by at least one welding ribbon 12, and the welding ribbon 12 is connected to the other solar cell piece 11 from the front side of one solar cell piece 11. Connected to the back side. The polyolefin layer 2 has two layers, which are laminated on both sides of the solar cell string 1 and can adopt a thermosetting type or a thermoplastic type as necessary, and has a thickness of 0.25 to 0.8 mm. It is preferable that the specific parameters include a wavelength of 382 to 1100 nm, a visible light transmittance of> 90%, a lateral shrinkage ratio of ≦ 2%, a longitudinal shrinkage ratio of ≦ 5%, and a crosslinking degree of 60 to 80%. The water absorption is ≦ 0.01%. The front glass layer 3 is laminated on one of the polyolefin layers 2, and the back plate 4 is laminated on the other polyolefin layer 2. The frame 6 is for sandwiching the back plate 4 and the front glass layer 3, and includes a frame body 61 and at least two engagement frames that are integrally formed with the frame body 61 and positioned on the inner surface thereof. The front glass layer 3 and the back plate 4 are interposed between the frames. The connection box 5 is attached on the back plate 4 and is used for connecting the solar cell string 1 and an external line, and a back contact type normal connection box may be adopted. Such a solar cell module improves the PID resistance of the module by reducing the water vapor permeability of the solar cell piece and avoiding the ion migration phenomenon that appears in the package material (polyolefin) in a high voltage state. There is an unpredictable effect that the PID phenomenon does not occur during the lifetime.

本実施例において、係合枠は３つあり、それぞれ枠体６１内側面の頂部、底部及び中間部に形成されており、枠体６１内側面の頂部に形成される係合枠を第１係合枠６２と定義し、枠体６１内側面の中間部に形成される係合枠を第２係合枠６３と定義し、枠体６１内側面の底部に形成される係合枠を第３係合枠６４と定義し、第１係合枠６２と第２係合枠６３との間に前板ガラス層３及び裏板４が介在されている。裏板４の材質はポリアミドであり、その具体的なパラメータについて、水蒸気バリアが１．２５ｇ/ｄｍ２であり、反射率が従来の裏板より１０％程度高く、従来のＰＥＴフッ素裏板を捨て去って無フッ素汚染の要求を満たすことで、環境に対して優しくなっており、さらに、以下のような予想できない効果がある。即ち、モジュールの耐風塵性能を３倍以上向上させ、アンモニア・アルカリ耐性も普通の裏板より優れており、この結晶シリコン太陽電池モジュールの耐ＰＩＤ性及び耐風塵性によって、その使用範囲を拡大し、高温高湿及び高風塵の地区に適用することができる。 In this embodiment, there are three engagement frames, which are respectively formed at the top, bottom and middle of the inner surface of the frame body 61. The engagement frame formed at the top of the inner surface of the frame body 61 is the first engagement. The engagement frame is defined as an engagement frame 62, the engagement frame formed at the intermediate portion of the inner surface of the frame body 61 is defined as the second engagement frame 63, and the engagement frame formed at the bottom portion of the inner surface of the frame body 61 is the third. It is defined as an engagement frame 64, and the front glass layer 3 and the back plate 4 are interposed between the first engagement frame 62 and the second engagement frame 63. The material of the back plate 4 is polyamide. Regarding its specific parameters, the water vapor barrier is 1.25 g / dm 2 , the reflectance is about 10% higher than the conventional back plate, and the conventional PET fluorine back plate is discarded. Satisfying the demand for fluorine-free contamination has become environmentally friendly and has the following unpredictable effects. In other words, the dust resistance of the module has been improved by more than 3 times, and the ammonia / alkali resistance is superior to that of ordinary back plates. The PID and dust resistance of this crystalline silicon solar cell module has expanded its range of use. Can be applied in high temperature, high humidity and high dust area.

上記実施例は、単に本発明の技術的構想及び特徴点を説明するためのものであり、この技術を熟知する人が本発明の内容を理解し、これによって実施することができることを目的とし、本発明の保護範囲を制限するものではなく、本発明の精神に基づく同等な変更又は修正は、いずれも本発明の保護範囲内にあるべきである。   The above embodiment is merely for explaining the technical concept and features of the present invention, and is intended to enable a person familiar with this technology to understand and implement the contents of the present invention. It is not intended to limit the protection scope of the present invention, and any equivalent changes or modifications based on the spirit of the present invention should be within the protection scope of the present invention.

１・・・太陽電池ストリング、１１・・・太陽電池片、１２・・・溶接リボン、２・・・ポリオレフィン層、３・・・前板ガラス層、４・・・裏板、５・・・接続箱、６・・・フレーム、６１・・・枠体、６２・・・第１係合枠、６３・・・第２係合枠、６４・・・第３係合枠。   DESCRIPTION OF SYMBOLS 1 ... Solar cell string, 11 ... Solar cell piece, 12 ... Welding ribbon, 2 ... Polyolefin layer, 3 ... Front plate glass layer, 4 ... Back plate, 5 ... Connection Box, 6 ... frame, 61 ... frame, 62 ... first engagement frame, 63 ... second engagement frame, 64 ... third engagement frame.

Claims (5)

耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュールであって、太陽電池ストリングと、前記太陽電池ストリングの両側に積層されたポリオレフィン層と、そのうちの一方の前記ポリオレフィン層上に積層された前板ガラス層と、他方の前記ポリオレフィン層上に積層された裏板と、前記裏板及び前記前板ガラス層を挟み込むためのフレームと、前記裏板上に取り付けられ、前記太陽電池ストリングと外部回線とを接続するための接続箱と、を含むことを特徴とする耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュール。   A PID- and dust-resistant crystalline silicon solar cell module, a solar cell string, a polyolefin layer laminated on both sides of the solar cell string, and a front glass layer laminated on one of the polyolefin layers A back plate laminated on the other polyolefin layer, a frame for sandwiching the back plate and the front plate glass layer, and attached to the back plate for connecting the solar cell string and an external line A PID-resistant and dust-resistant crystalline silicon solar cell module. 前記裏板の材質はポリアミドであることを特徴とする請求項１に記載の耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュール。   2. The PID- and dust-resistant crystalline silicon solar cell module according to claim 1, wherein the back plate is made of polyamide. 前記太陽電池ストリングは、少なくとも２つの太陽電池片が少なくとも１つの溶接リボンにより直列に接続されてなることを特徴とする請求項２に記載の耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュール。   3. The PID- and dust-resistant crystalline silicon solar cell module according to claim 2, wherein the solar cell string includes at least two solar cell pieces connected in series by at least one welding ribbon. 前記フレームは、枠体と、前記枠体と一体成型し且つその内側面に位置する係合枠とを含み、前記係合枠は３つあり、それぞれ前記枠体内側面の頂部、底部及び中間部に形成されており、前記枠体内側面の頂部に形成される係合枠を第１係合枠と定義し、前記枠体内側面の中間部に形成される係合枠を第２係合枠と定義し、前記枠体内側面の底部に形成される係合枠を第３係合枠と定義し、前記第１係合枠と前記第２係合枠との間に前記前板ガラス層及び前記裏板が介在されていることを特徴とする請求項２に記載の耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュール。   The frame includes a frame body and an engagement frame that is integrally formed with the frame body and is positioned on an inner surface thereof, and there are three engagement frames, each of a top portion, a bottom portion, and an intermediate portion on the side surface of the frame body. The engagement frame formed at the top of the side surface of the frame body is defined as a first engagement frame, and the engagement frame formed at the middle portion of the side surface of the frame body is defined as a second engagement frame. An engagement frame formed on the bottom of the side surface of the frame body is defined as a third engagement frame, and the front glass layer and the back surface are defined between the first engagement frame and the second engagement frame. 3. A PID- and dust-resistant crystalline silicon solar cell module according to claim 2, wherein a plate is interposed. 前記ポリオレフィン層の厚さは０．２５〜０．８ｍｍであることを特徴とする請求項１に記載の耐ＰＩＤ且つ耐風塵の結晶シリコン太陽電池モジュール。   2. The PID- and dust-resistant crystalline silicon solar cell module according to claim 1, wherein the polyolefin layer has a thickness of 0.25 to 0.8 mm.
JP2018533990A 2015-09-23 2015-12-29 PID- and dust-resistant crystalline silicon solar cell module Pending JP2018527763A (en)

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