CN207458963U - A kind of anti-PID crystal silicon solar batteries of resistance to dust storm component - Google Patents
A kind of anti-PID crystal silicon solar batteries of resistance to dust storm component Download PDFInfo
- Publication number
- CN207458963U CN207458963U CN201721579829.7U CN201721579829U CN207458963U CN 207458963 U CN207458963 U CN 207458963U CN 201721579829 U CN201721579829 U CN 201721579829U CN 207458963 U CN207458963 U CN 207458963U
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- CN
- China
- Prior art keywords
- frame
- card
- solar battery
- pid
- battery sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 239000000428 dust Substances 0.000 title claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 7
- 239000005341 toughened glass Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 10
- 230000005611 electricity Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229940117958 vinyl acetate Drugs 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of anti-PID crystal silicon solar batteries of resistance to dust storm components, including frame, the frame upper end is equipped with No.1 card frame, the No.1 card frame corner is equipped with moisture sensor, the frame lower end is equipped with No. two card frames, the lower portion is equipped with solar battery sheet, the solar battery sheet surface is equipped with welding, the solar battery sheet upper end is equipped with No.1 EVA layer, the No.1 EVA layer upper end is equipped with ultrawhite woven design tempered glass, the solar battery sheet places an order equipped with No. two EVA layers, No. two EVA layers place an order equipped with TPT backboards, the TPT backboards lower end is equipped with heater, the heater lower end is equipped with No. three card frames and terminal box, the terminal box is located between No. three card frames, No. three Ka Kuang lower ends are equipped with accumulator.The utility model is simple in structure, easy for installation, increases the anti-PID performances of component, is not in PID phenomenons during assembly life-span.
Description
Technical field
The utility model is related to photovoltaic solar cell field, the more particularly to a kind of anti-PID crystal silicon solars of resistance to dust storm electricity
Pond component.
Background technology
Solar energy is the inexhaustible regenerative resource of the mankind and clean energy resource, does not generate any ring
It pollutes in border.Among the efficiently using of solar energy, solar photoelectric is using being research with fastest developing speed in recent years, most active
Field.For crystal silicon solar energy battery mainly based on semi-conducting material, operation principle is to absorb light using photoelectric material
The device that opto-electronic conversion reaction directly changes into luminous energy electric energy can occur afterwards.
At present, the primary structure of conventional crystalline silicon solar component is：Toughened glass layer, ethylene and vinylacetate block
Copolymer, cell piece, backboard and aluminum alloy frame, entire lightweight packages are about 20kg or so.Research in recent years shows exist
The high voltage between circuit and its grounded metal frame in Crystalline Silicon PV Module can cause the photovoltaic performance of component to hold
Continuous attenuation.And conventional anti-PID（Potential Induced Degradation, i.e. potential induction attenuation）Component is using
After 3-5, component power attenuation is apparent, and power attenuation is excessive during assembly life-span, and assembly life-span shortens, and causes power station generated energy
It is decreased obviously.Existing conventional crystalline silicon component backboard is generally using dual coating type backboard, husky generally 5L/ μm of knockout test
Left and right, anti-blown sand ability is weaker, and common fluorine-containing backboard has fluoride generation, have fluoride pollution to environment in recycling
Risk.For this purpose, a kind of it is proposed that anti-PID crystal silicon solar batteries of resistance to dust storm component.
Utility model content
The main purpose of the utility model is that provide a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component, Ke Yiyou
Effect is solved the problems, such as in background technology.
To achieve the above object, the technical solution that the utility model is taken is：
A kind of anti-PID crystal silicon solar batteries of resistance to dust storm component, including frame, the frame upper end is equipped with No.1 card frame,
The No.1 card frame corner is equipped with moisture sensor, and the frame lower end is equipped with No. two card frames, and the lower portion is equipped with too
Positive energy cell piece, the solar battery sheet surface are equipped with welding, and the solar battery sheet upper end is equipped with No.1 EVA layer, institute
No.1 EVA layer upper end is stated equipped with ultrawhite woven design tempered glass, the solar battery sheet lower end is equipped with No. two EVA layers, and described two
Number EVA layer lower end is equipped with TPT backboards, and the TPT backboards lower end is equipped with heater, the heater lower end be equipped with No. three card frames and
Terminal box, the terminal box are located between No. three card frames, and No. three Ka Kuang lower ends are equipped with accumulator.
Further, the heater and accumulator are electrically connected by connecting line, the heater and moisture sensor
It is electrically connected.
Further, the frame, No.1 card frame, No. two card frames and No. three card frames are fixedly connected.
Further, at least two solar battery sheet is connected by welding by the front of a solar battery sheet
Solar cell string is formed to the back side of another solar battery sheet.
Further, the thickness of the No.1 EVA layer and No. two EVA layers is 0.25 ~ 0.8mm.
Compared with prior art, the utility model has the advantages that：This kind of anti-PID crystal silicon solars of resistance to dust storm electricity
Pond component can reduce water vapor transmittance, avoid and seal under high voltages by being respectively provided with EVA layer in solar battery sheet both sides
The Ion transfer phenomenon occurred in package material increases the anti-PID performances of component, is not in PID phenomenons during assembly life-span,
By the heater and moisture sensor being equipped with, when moisture sensor finds that solar cell surface has steam, pass through heating
Steam is evaporated by device so that PID decays, until disappear, by the accumulator being equipped with, can in no sun pair plus
When hot device carries out electricity supply, to ensure the operation of heater, the utility model is simple in structure, easy for installation, increases component
Anti- PID performances are not in PID phenomenons during assembly life-span.
Description of the drawings
Fig. 1 is the overlooking the structure diagram of the anti-PID crystal silicon solar batteries of the resistance to dust storm component of the utility model.
Fig. 2 is the cross-sectional view of the anti-PID crystal silicon solar batteries of the resistance to dust storm component of the utility model.
In figure：1st, frame；2nd, No.1 card frame；3rd, No. two card frames；4th, solar battery sheet；5th, welding；6th, No.1 EVA layer；
7th, ultrawhite woven design tempered glass；8th, No. two EVA layers；9th, TPT backboards；10th, heater；11st, No. three card frames；12nd, terminal box；13、
Accumulator；14th, connecting line；15th, moisture sensor.
Specific embodiment
Technical means, creative features, achievable purpose and effectiveness to realize the utility model are easy to understand, below
With reference to specific embodiment, the utility model is expanded on further.
As shown in Figs. 1-2, a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component, including frame 1,1 upper end of frame
Equipped with No.1 card frame 2,2 four jiaos of the No.1 card frame is equipped with moisture sensor 15, and 1 lower end of frame is equipped with No. two card frames 3,
The frame 1 is internally provided with solar battery sheet 4, and 4 surface of solar battery sheet is equipped with welding 5, the solar cell
4 upper end of piece is equipped with No.1 EVA layer 6, and 6 upper end of No.1 EVA layer is equipped with ultrawhite woven design tempered glass 7, the solar cell
4 lower end of piece is equipped with No. two EVA layers 8, and 8 lower end of No. two EVA layers is equipped with TPT backboards 9, and 9 lower end of TPT backboards is equipped with heating
Device 10,10 lower end of heater are equipped with No. three card frames 11 and terminal box 12, and the terminal box 12 is located between No. three card frames 11,
No. three Ka Kuang11 lower ends are equipped with accumulator 13.
A kind of anti-PID crystal silicon solar batteries of resistance to dust storm component of the utility model, the utility model pass through in solar-electricity
Pond piece both sides are respectively provided with EVA layer, can reduce water vapor transmittance, avoid the ion occurred in encapsulating material under high voltages and move
Phenomenon is moved, increases the anti-PID performances of component, is not in PID phenomenons during assembly life-span, passes through the heater and water being equipped with
Steam when moisture sensor finds that solar cell surface has steam, is evaporated by vapour sensor by heater so that
PID decays, until disappear, by the accumulator being equipped with, when can carry out electricity supply to heater in no sun, with
Ensure the operation of heater, the utility model is simple in structure, easy for installation, increases the anti-PID performances of component, in the assembly life-span phase
Between be not in PID phenomenons.
Wherein, the heater 10 and accumulator 13 are electrically connected by connecting line 14, and the heater 10 and steam pass
Sensor 15 is electrically connected.
Wherein, 2, No. two frame 1, No.1 card frame card frames 3 are fixedly connected with No. three card frames 11.
Wherein, at least two solar battery sheet 4 is connected by welding 5 by the front of a solar battery sheet 4
Solar cell string is formed to the back side of another solar battery sheet 4.
Wherein, the thickness of the No.1 EVA layer 6 and No. two EVA layers 8 is 0.25 ~ 0.8mm.
It should be noted that the utility model is a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component, during work, lead to
It crosses and No.1 EVA layer 6 and No. two EVA layers 8 is set in 4 both sides of solar battery sheet, water vapor transmittance can be reduced, avoided in height
The Ion transfer phenomenon occurred under voltage in encapsulating material increases the anti-PID performances of component, is not in during assembly life-span
PID phenomenons, by the heater 10 and moisture sensor 15 being equipped with, when moisture sensor 15 finds that solar cell surface has water
During vapour, steam is evaporated by heater so that PID decays, until disappear, it, can by the accumulator 13 being equipped with
It is simple in structure to ensure the operation of heater when carrying out electricity supply to heater in no sun, it is easy for installation, increase
The anti-PID performances of component are not in PID phenomenons during assembly life-span.
The basic principle of the utility model and main feature and the advantages of the utility model has been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the present utility model is not limited to the above embodiments, described in above embodiments and description
Simply illustrate the principle of the utility model, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
Various changes and modifications are had, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed scope is defined by the appending claims and its equivalent thereof.
Claims (5)
1. a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component, including frame（1）, it is characterised in that：The frame（1）On
End is equipped with No.1 card frame（2）, the No.1 card frame（2）Corner is equipped with moisture sensor（15）, the frame（1）Lower end is equipped with
No. two card frames（3）, the frame（1）It is internally provided with solar battery sheet（4）, the solar battery sheet（4）Surface is equipped with weldering
Band（5）, the solar battery sheet（4）Upper end is equipped with No.1 EVA layer（6）, the No.1 EVA layer（6）Upper end is equipped with ultrawhite cloth
Line tempered glass（7）, the solar battery sheet（4）Lower end is equipped with No. two EVA layers（8）, No. two EVA layers（8）Lower end is set
There are TPT backboards（9）, the TPT backboards（9）Lower end is equipped with heater（10）, the heater（10）Lower end is equipped with No. three card frames
（11）And terminal box（12）, the terminal box（12）Positioned at No. three card frames（11）Between, No. three card frames（11）Lower end is equipped with
Accumulator（13）.
2. according to a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component described in claim 1, it is characterised in that：The heating
Device（10）And accumulator（13）Pass through connecting line（14）It is electrically connected, the heater（10）And moisture sensor（15）Electrically connect
It connects.
3. according to a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component described in claim 1, it is characterised in that：The frame
（1）, No.1 card frame（2）, No. two card frames（3）With No. three card frames（11）It is fixedly connected.
4. according to a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component described in claim 1, it is characterised in that：It is described at least
Two solar battery sheets（4）Pass through welding（5）By a solar battery sheet（4）Front be connected to another solar-electricity
Pond piece（4）The back side formed solar cell string.
5. a kind of anti-PID crystal silicon solar batteries of resistance to dust storm component according to claim 1, it is characterised in that：Described one
Number EVA layer（6）With No. two EVA layers（8）Thickness be 0.25 ~ 0.8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721579829.7U CN207458963U (en) | 2017-11-23 | 2017-11-23 | A kind of anti-PID crystal silicon solar batteries of resistance to dust storm component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721579829.7U CN207458963U (en) | 2017-11-23 | 2017-11-23 | A kind of anti-PID crystal silicon solar batteries of resistance to dust storm component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207458963U true CN207458963U (en) | 2018-06-05 |
Family
ID=62278330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721579829.7U Expired - Fee Related CN207458963U (en) | 2017-11-23 | 2017-11-23 | A kind of anti-PID crystal silicon solar batteries of resistance to dust storm component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207458963U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118354618A (en) * | 2024-06-18 | 2024-07-16 | 徐州太一光能科技有限公司 | Crystalline silicon composite perovskite solar cell module |
-
2017
- 2017-11-23 CN CN201721579829.7U patent/CN207458963U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118354618A (en) * | 2024-06-18 | 2024-07-16 | 徐州太一光能科技有限公司 | Crystalline silicon composite perovskite solar cell module |
| CN118354618B (en) * | 2024-06-18 | 2024-09-17 | 徐州太一光能科技有限公司 | Crystalline silicon composite perovskite solar cell module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180605 Termination date: 20191123 |