CN105845763A - Frameless crystalline silicon cell completely-PID-resistant light assembly and cell panel - Google Patents
Frameless crystalline silicon cell completely-PID-resistant light assembly and cell panel Download PDFInfo
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- CN105845763A CN105845763A CN201610235691.2A CN201610235691A CN105845763A CN 105845763 A CN105845763 A CN 105845763A CN 201610235691 A CN201610235691 A CN 201610235691A CN 105845763 A CN105845763 A CN 105845763A
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- pid
- crystal silicon
- light components
- type crystal
- silicon battery
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 32
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 229920000098 polyolefin Polymers 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 23
- 238000003466 welding Methods 0.000 claims description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000005022 packaging material Substances 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 24
- 239000003677 Sheet moulding compound Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000032258 transport Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009432 framing Methods 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a frameless crystalline silicon cell completely-PID-resistant light assembly and a cell panel. The frameless crystalline silicon cell completely-PID-resistant light assembly comprises front board glass, cell slices, a backboard and a wiring box, wherein the cell slices are arranged between the front board glass and the backboard; the front board glass is photovoltaic ultra-white figured glass with thickness of 4.0-5.0mm, a nano titanium dioxide coating film is attached to the surface of the front board glass, packaging material layers are arranged between the cell slices and the front board glass as well as between the cell slices and the backboard, the packaging material layers are prepared by polyolefin, the wiring box is electrically connected with the cell slices, the packaging material layers are mixed with a wavelength conversion agent, and the wavelength conversion agent can shift an ineffective or low-efficiency sunlight wavelength to an effective wavelength. The frameless crystalline silicon cell completely-PID-resistant light assembly eliminates an aluminum frame, satisfies a load requirement of 5400pa without installing the frame, is completely resistant to PID, and is decreased in weight, thickness, and production cost.
Description
Technical field
The present invention relates to a kind of crystalline silicon photovoltaic module, particularly relate to a kind of rimless type crystal silicon battery
The most anti-PID light components and cell panel.
Background technology
Crystalline silicon is divided into monocrystalline silicon, polysilicon and non-crystalline silicon.Wherein, mono-crystalline silicon solar electricity
Pond is a kind of solar cell currently developing the fastest, and its structure and production technology are the most fixed
Type, product is widely used in space and ground.
Above-mentioned crystalline silicon can be used for making Crystalline Silicon PV Module, and research shows, is present in crystal
The high voltage between circuit and its grounded metal frame in silicon photovoltaic module, can cause assembly
The continuous decrement of photovoltaic performance.It is many for causing this type of mechanism decayed, such as above-mentioned
Under high-tension effect, the encapsulating material of assembly battery and assembly upper surface layer and undersurface layer
The Ion transfer phenomenon occurred in material；The hot carrier phenomenon occurred in battery；Electric charge is again
Distribution reduces the active layer of battery；Relevant circuit is corroded etc..
The above-mentioned mechanism causing decay is referred to as electromotive force induction decay, polarity, electrolytic etching
And electrochemical corrosion.Conventional anti-PID (induce by Potential Induced Degradation electromotive force
Decay), after assembly uses 3-5, component power decay is substantially, during assembly life-span, power
Too much, assembly life-span shortens, and causes power station generated energy to be decreased obviously in decay.Additionally solar energy
The structure of photovoltaic assembly mainly includes upper cover plate, binding agent, cell piece, backboard, frame and wiring
Box.Packaged photovoltaic module needs outdoor placement, the dust in air after use a period of time
Particulate matter can adsorb on the cover plate of photovoltaic module, forms light blocking dust cover layer, thus reduces
The optoelectronic transformation efficiency of photovoltaic module, the light tight pollutant of bulk covers and also can produce hot spot effect simultaneously
Should, cause photovoltaic module localized regions of elevated temperature until burning and scrapping.As can be seen here, photovoltaic group
The natural resistance of part is poor, is chronically exposed in air and there will be efficiency decay, surface sediment one-tenth ash
After the problem such as be difficult to clean off, thus the electricity conversion of existing photovoltaic module is relatively low, use
Life-span the most not can exceed that 20 years.
Meanwhile, existing conventional crystalline silicon lightweight packages is about about 20kg.The weight of assembly itself
Amount, limits its range of application, in the projects such as the roof that weight capacity is more weak, it is impossible to meet
Actual demand.Further, conventional crystalline silicon assembly is heavy, causes it to be inconvenient to carry and transport.
Therefore, for above-mentioned technical problem, it is necessary to further solution.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of rimless type crystal silicon battery the most anti-
PID light components and cell panel, to overcome defect present in existing Crystalline Silicon PV Module.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
The rimless type crystal silicon battery the most anti-PID light components of the present invention includes: front glass sheet,
Cell piece, backboard and terminal box, described cell piece is between described front glass sheet and backboard；
Described front glass sheet is the photovoltaic energy ultrawhite figured glass that 4.0-5.0mm is thick, described header board glass
Glass surface have nano titanium oxide film, between described cell piece and described front glass sheet, electricity
Being respectively arranged with encapsulation material material layer between pond sheet and described backboard, described encapsulating material layer is poly-
Alkene, described terminal box is electrically connected with cell piece, is mixed with wavelength and turns in encapsulating material layer
Changing agent, invalid or poor efficiency sunlight wavelength can be migrated to significant wave by described wavelength-shifting agent
Long.
Described backboard includes basic unit, outer layer and fluorine-containing coat the most successively from center, described outside
Layer surface is through plasma treatment；Described outer layer is BMC layer or SMC layer；Described basic unit is
PET keriotheca；Described PET keriotheca is by the thickest soft folder of folder in the middle of upper and lower panel one
Core is constituted；The surface of described fluorine-containing coat is through plasma treatment.
As the improvement of the rimless type crystal silicon battery the most anti-PID light components of the present invention, described
The thickness of the encapsulating material layer of cell piece either side is 0.25-0.8mm.
As the improvement of the rimless type crystal silicon battery the most anti-PID light components of the present invention, described
The thickness of rimless type crystal silicon battery the most anti-PID light components is less than 1cm, and weight is 8-12kg.
As the improvement of the rimless type crystal silicon battery the most anti-PID light components of the present invention, described
Rimless type crystal silicon battery the most anti-PID light components also includes that welding, described welding are arranged at institute
Stating the front of cell piece, described terminal box is electrically connected with described welding.
As the improvement of the rimless type crystal silicon battery the most anti-PID light components of the present invention, described
Polyolefin is heat curing-type or thermoplastics type.
As the improvement of the rimless type crystal silicon battery the most anti-PID light components of the present invention, described
Terminal box is that the back of the body connects formula terminal box, and it is installed on the back side of described cell piece.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
The cell panel of the present invention includes rimless type crystal silicon battery as above the most anti-PID lightweight
Assembly, the quantity of described assembly is multiple, is electrically connected with between the plurality of assembly.
Compared with prior art, the invention has the beneficial effects as follows: the rimless type crystal silicon electricity of the present invention
Pond the most anti-PID light components abandons aluminium frame, and assembly just can meet 5400pa without framing up
Loading demands；And the most anti-PID of assembly, and reduce lightweight packages, reduce component thickness,
Reduce manufacturing cost.Thus, it is greatly prolonged assembly service life, reduces during assembly uses
Power attenuation, extend the range of application of crystalline silicon component, and improve crystalline silicon component
Convenience and rodability.Solving crystalline silicon component quality weight, thickness is thick, transports and uses
The problems such as inconvenience；
Meanwhile, the light transmission rate of the rimless type crystal silicon battery the most anti-PID light components of the present invention
Reach more than 92%, add the generated energy of assembly, and do not reduce rigidity and the machine of assembly
Tool load-carrying ability；
The rimless type crystal silicon battery the most anti-PID light components water vapor transmittance of the present invention is low, increases
Having added the anti-PID performance of assembly, making assembly is the most anti-PID assembly, during assembly life-span
Do not have PID phenomenon.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below
The accompanying drawing used required in embodiment or description of the prior art will be briefly described, aobvious and
Easily insight, the accompanying drawing in describing below is only some embodiments described in the present invention, for
From the point of view of those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to root
Other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 is rimless type crystal silicon battery of the present invention the most anti-PID light components one specific embodiment party
The floor map of formula.
Fig. 2 is the structural representation of backboard of the present invention.
Wherein, front glass sheet-10, cell piece-20, backboard-30, terminal box-40, encapsulation material
Material layer-50, welding-60.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the present invention, below
The accompanying drawing in the embodiment of the present invention will be combined, the technical scheme in the embodiment of the present invention will be carried out clearly
Chu, it is fully described by, it is clear that described embodiment is only a part of embodiment of the present invention,
Rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under not making creative work premise, all should belong to
The scope of protection of the invention.
As it is shown in figure 1, the rimless type crystal silicon battery the most anti-PID light components 100 of the present invention
Including: front glass sheet 10, cell piece 20, backboard 30 and terminal box 40, described battery
Sheet 20 is between described front glass sheet 10 and backboard 30.
Wherein, described front glass sheet is the photovoltaic energy ultrawhite figured glass that 4.0-5.0mm is thick, described
Header board glass surface has nano titanium oxide film, thus, can be easy to increase passing through of assembly
Rate, makes transmitance reach more than 92%, thus adds the generated energy of assembly, and will not
Reduce rigidity and the mechanical load capability of assembly.
Between described cell piece 20 and described front glass sheet 10, cell piece 20 and described backboard
Being respectively arranged with encapsulation material material layer 50 between 30, this encapsulating material layer is used for pond sheet 20 and institute
State the connection between front glass sheet 10, between cell piece 20 and described backboard 30.The described back of the body
Ban Cong center includes basic unit, outer layer and fluorine-containing coat the most successively, and described superficies pass through
Plasma treatment；Described outer layer is BMC layer or SMC layer；Described basic unit is PET keriotheca；
Described PET keriotheca is to be made up of the thickest soft sandwich of folder in the middle of upper and lower panel one；Institute
State the surface of fluorine-containing coat through plasma treatment.
In present embodiment, described encapsulating material layer 50 is polyolefin, and this polyolefin can be
Heat curing-type or thermoplastics type, be mixed with wavelength-shifting agent, described wavelength-shifting agent energy in encapsulating material layer
Enough invalid or poor efficiency sunlight wavelength is migrated to EWL.It is arranged such, it is possible to decrease water
Vapour transmitance, increases the anti-PID performance of assembly, and making assembly is the most anti-PID assembly, in group
PID phenomenon is not had during the part life-span.Preferably, the envelope of wantonly 20 sides of described cell piece
The thickness of package material layer is 0.25-0.8mm.Thus so that described rimless type crystal silicon battery is complete
The thickness of complete anti-PID light components is less than 1cm.
As shown in Fig. 2 institute, the embodiment of a kind of backboard that the present invention is given, including basic unit 1,
Described basic unit 1 is the PET keriotheca formed after cellular technology processes.Described keriotheca form
Basic unit be to be made up of the thickest soft sandwich of folder in the middle of upper and lower panel one, honeycomb interlayer is tied
Structure has the mechanical property of similar I-beam, has high rigidity, high intensity, high impact resistance, with
Other sandwich material is compared, and when intensity is identical, its weight is light.Use PET keriotheca
As basic unit, PET material wet and heat ageing resistant, tear-resistant, dimensionally stable, Yi Jia can be played
The advantage of work, can utilize again the high rigidity of honeycomb style interlayer, high intensity, high impact resistance,
The design feature that thermal diffusivity is good, can fully meet the demand of solar cell backboard.The present invention
Casting technique is used to be cast out SMC or BMC resin on two surfaces of basic unit 1, respectively shape
Become outer layer 2.SMC refers to that sheet molding compound, BMC refer to BMC, and it has excellent
Decay resistance, stronger rigidity, its mechanical performance can match in excellence or beauty with part metals material.
Outer surface at two outer layers 2 also has fluorine-containing coat 3.Fluorine-containing coat 3 has the most resistance to
Hou Xing, resistance to water, oxygen barrier performance, and have self-cleaning property, it is especially suitable for doing the solar cell back of the body
The outermost layer of plate.
Additionally, due to use thicker front glass sheet and the preferable polyolefin of block-water performance, thus
The load of 5400pa just can be met without framing up with the aluminium frame edge sealing of abandoning tradition, assembly
Requirement, meanwhile, also mitigates the weight of assembly, it is simple to the transport of assembly.The present invention without frame
The weight of type crystal silicon battery the most anti-PID light components is 8-12kg, and its weight is significantly lower than existing
Some crystalline silicon components.
Described rimless type crystal silicon battery the most anti-PID light components 100 also includes welding 60,
Described welding 60 is arranged at the front of described cell piece 20, and the quantity of welding 60 can be according to need
Being set to multiple, welding 60 forms the pin of cell piece 20, and described terminal box 40 is passed through
Welding 60 realizes the electric connection with cell piece 20.The terminal box of the present invention can be that the back of the body connects formula
Terminal box, it is installed on the back side of described cell piece 20.
When the rimless type crystal silicon battery the most anti-PID light components 100 of the present invention makes, will be poly-
Alkene is evenly applied on the fitting surface of front glass sheet and backboard respectively, and by welding by welding
Mode is welded on the front of cell piece, after welding, is fixed by polyolefin by cell piece
On between front glass sheet and backboard, and keep just arranging of cell piece facing to header board glass,
The back of the body connects formula terminal box again be fixed on the back side of cell piece, and the back of the body is connect extraction in formula terminal box
Connecting line be electrically connected with welding.
Additionally, based on identical inventive concept, the present invention also provides for a kind of cell panel, this battery
Plate includes rimless type crystal silicon battery as above the most anti-PID light components, described assembly
Quantity is multiple, is electrically connected with between the plurality of assembly, thus by multiple present invention
Rimless type crystal silicon battery the most anti-PID light components bigger electricity can be provided to export, meet
The needs of different occasion production and processings.
Shown in sum up, the rimless type crystal silicon battery the most anti-PID light components of the present invention abandons aluminium
Frame, assembly just can meet the loading demands of 5400pa without framing up；And the most anti-PID of assembly,
And reduce lightweight packages, reduce component thickness, reduce manufacturing cost.Thus, it is greatly prolonged
Assembly service life, reduce the power attenuation during assembly uses, extend crystalline silicon component
Range of application, and improve convenience and the rodability of crystalline silicon component.Solve crystal
Silicon assembly quality weight, thickness is thick, transport and in-convenience in use etc. problem；
Meanwhile, the light transmission rate of the rimless type crystal silicon battery the most anti-PID light components of the present invention
Reach more than 92%, add the generated energy of assembly, and do not reduce rigidity and the machine of assembly
Tool load-carrying ability；
The rimless type crystal silicon battery the most anti-PID light components water vapor transmittance of the present invention is low, increases
Having added the anti-PID performance of assembly, making assembly is the most anti-PID assembly, during assembly life-span
Do not have PID phenomenon.
It is obvious to a person skilled in the art that the invention is not restricted to above-mentioned one exemplary embodiment
Details, and without departing from the spirit or essential characteristics of the present invention, it is possible to it
His concrete form realizes the present invention.Therefore, no matter from the point of view of which point, all should be by embodiment
Regarding exemplary as, and be nonrestrictive, the scope of the present invention is by claims
Rather than described above limit, it is intended that by fall claim equivalency implication and
In the range of all changes include in the present invention.Should be by any accompanying drawing mark in claim
Note is considered as limiting involved claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, but not
Each embodiment only comprises an independent technical scheme, and this narrating mode of specification is only
Being only for clarity sake, those skilled in the art should be using specification as an entirety, respectively
Technical scheme in embodiment can also be through appropriately combined, and forming those skilled in the art can manage
Other embodiments solved.
Claims (7)
1. a rimless type crystal silicon battery the most anti-PID light components, it is characterised in that institute
State rimless type crystal silicon battery the most anti-PID light components to include: front glass sheet, cell piece, the back of the body
Plate and terminal box, described cell piece is between described front glass sheet and backboard；
Described front glass sheet is the photovoltaic energy ultrawhite figured glass that 4.0-5.0mm is thick, described header board glass
Glass surface has nano titanium oxide film；
Between described cell piece and described front glass sheet, set respectively between cell piece and described backboard
Being equipped with encapsulation material material layer, described encapsulating material layer is polyolefin, described terminal box and cell piece
Being electrically connected with, be mixed with wavelength-shifting agent in encapsulating material layer, described wavelength-shifting agent can
Invalid or poor efficiency sunlight wavelength is migrated to EWL；
Described backboard includes basic unit, outer layer and fluorine-containing coat the most successively from center, described outside
Layer surface is through plasma treatment；Described outer layer is BMC layer or SMC layer；Described basic unit is
PET keriotheca；Described PET keriotheca is by the thickest soft folder of folder in the middle of upper and lower panel one
Core is constituted；The surface of described fluorine-containing coat is through plasma treatment.
Rimless type crystal silicon battery the most according to claim 1 the most anti-PID light components,
It is characterized in that, the thickness of the encapsulating material layer of described cell piece either side is 0.25-0.8mm.
Rimless type crystal silicon battery the most according to claim 1 the most anti-PID light components,
It is characterized in that, the thickness of described rimless type crystal silicon battery the most anti-PID light components is less than
1cm, weight is 8-12kg.
Rimless type crystal silicon battery the most according to claim 1 the most anti-PID light components,
It is characterized in that, described rimless type crystal silicon battery the most anti-PID light components also includes welding,
Described welding is arranged at the front of described cell piece, and described terminal box and described welding are carried out electrically
Connect.
Rimless type crystal silicon battery the most according to claim 1 the most anti-PID light components,
It is characterized in that, described polyolefin is heat curing-type or thermoplastics type.
Rimless type crystal silicon battery the most according to claim 1 the most anti-PID light components,
It is characterized in that, described terminal box is that the back of the body connects formula terminal box, and it is installed on the back of the body of described cell piece
Face.
7. a cell panel, it is characterised in that described cell panel includes such as claim 1-6
Rimless type crystal silicon battery the most anti-PID light components described in any one, the quantity of described assembly
For multiple, it is electrically connected with between the plurality of assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610235691.2A CN105845763A (en) | 2016-04-14 | 2016-04-14 | Frameless crystalline silicon cell completely-PID-resistant light assembly and cell panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610235691.2A CN105845763A (en) | 2016-04-14 | 2016-04-14 | Frameless crystalline silicon cell completely-PID-resistant light assembly and cell panel |
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| Publication Number | Publication Date |
|---|---|
| CN105845763A true CN105845763A (en) | 2016-08-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610235691.2A Pending CN105845763A (en) | 2016-04-14 | 2016-04-14 | Frameless crystalline silicon cell completely-PID-resistant light assembly and cell panel |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449824A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Crystal silicon battery PID (potential induced degradation) resistant light-weight assembly and battery panel |
| CN106601845A (en) * | 2016-11-29 | 2017-04-26 | 梁结平 | Frameless photovoltaic module and solar panel |
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| CN111574064A (en) * | 2020-06-09 | 2020-08-25 | 中节能太阳能科技（镇江）有限公司 | anti-PID grid glass and preparation method thereof |
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| CN106601845A (en) * | 2016-11-29 | 2017-04-26 | 梁结平 | Frameless photovoltaic module and solar panel |
| CN106449824A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Crystal silicon battery PID (potential induced degradation) resistant light-weight assembly and battery panel |
| CN108231916A (en) * | 2017-12-07 | 2018-06-29 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of photovoltaic module of resisting potential induced degradation |
| CN108231916B (en) * | 2017-12-07 | 2023-11-10 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Photovoltaic module resistant to potential induction attenuation |
| CN111574064A (en) * | 2020-06-09 | 2020-08-25 | 中节能太阳能科技（镇江）有限公司 | anti-PID grid glass and preparation method thereof |
| CN111574064B (en) * | 2020-06-09 | 2022-08-02 | 中节能太阳能科技（镇江）有限公司 | anti-PID grid glass and preparation method thereof |
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