CN108231916A - A kind of photovoltaic module of resisting potential induced degradation - Google Patents
A kind of photovoltaic module of resisting potential induced degradation Download PDFInfo
- Publication number
- CN108231916A CN108231916A CN201711287837.9A CN201711287837A CN108231916A CN 108231916 A CN108231916 A CN 108231916A CN 201711287837 A CN201711287837 A CN 201711287837A CN 108231916 A CN108231916 A CN 108231916A
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- China
- Prior art keywords
- photovoltaic module
- plastic film
- film layer
- glass
- induced degradation
- Prior art date
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Links
- 230000015556 catabolic process Effects 0.000 title claims abstract description 22
- 238000006731 degradation reaction Methods 0.000 title claims abstract description 22
- 239000002985 plastic film Substances 0.000 claims abstract description 38
- 229920006255 plastic film Polymers 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 26
- 241000446313 Lamella Species 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- 239000000565 sealant Substances 0.000 claims description 7
- 239000004800 polyvinyl chloride Substances 0.000 claims description 5
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 5
- 229920000098 polyolefin Polymers 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000006698 induction Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 abstract description 6
- 230000009471 action Effects 0.000 abstract description 4
- -1 frame.Wherein Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of photovoltaic module of resisting potential induced degradation, including backboard, the first EVA layer, solar cell lamella, the second EVA layer and the glass set gradually.The photovoltaic component encapsulating is connected in the mounting groove in metal edge frame, being provided with mounting groove, the photovoltaic module in the metal edge frame.Wherein, plastic film layer is provided on the glass, the plastic film layer is between the glass and the side wall of the mounting groove.The photovoltaic module utilizes the plastic film layer with high volume resistivity, it is mutually isolated with the metal edge frame, effectively reduce the free metal ion migrated under the electric field action generated in the metal edge frame on the solar cell lamella, thus the potential induction attenuation phenomenon of photovoltaic module generation is reduced, and then improves the photoelectric conversion efficiency of photovoltaic module.
Description
Technical field
The present invention relates to photovoltaic solar technical fields, more particularly to a kind of photovoltaic module of resisting potential induced degradation.
Background technology
In current photovoltaic module, often occur that photovoltaic module reliability of operation can be seriously affected and the potential of stability lures
Relaxation phenomenon is led, in the photovoltaic module that potential induction attenuation phenomenon occurs, the metal edge frame of photovoltaic module can generate huge
Voltage, influences the solar battery sheet adjacent with its surrounding, and the strong electric field formed on metal edge frame can make the glass of photovoltaic module
For the metal ion transports such as the sodium calcium to dissociate in glass to the surface of solar battery sheet, these collect in solar battery sheet surface
Metal ion can be further diffused in the internal material of solar battery sheet, so as to influence the opto-electronic conversion of solar battery sheet
The various unit for electrical property parameters such as efficiency.Potential induction attenuation phenomenon can make the power of more than 50% photovoltaic module loss, can be to advising greatly
Mould causes huge loss using the power station of photovoltaic module.
Invention content
In view of the deficiencies in the prior art, the present invention provides a kind of photovoltaic module of resisting potential induced degradation, on solving
State problem.
To achieve these goals, this invention takes following technical solutions:
A kind of photovoltaic module of resisting potential induced degradation, including the backboard, the first EVA layer, solar cell set gradually
Lamella, the second EVA layer and glass, the photovoltaic component encapsulating are provided with mounting groove in metal edge frame in the metal edge frame,
The photovoltaic module is connected in the mounting groove;Wherein, plastic film layer is provided on the glass, the plastic film layer is located at
Between the side wall of the glass and the mounting groove.
Preferably, the solar cell lamella includes multiple solar battery sheets, and the plastic film layer is in the sun
The projection of energy battery lamella is located at except the multiple solar battery sheet.
Preferably, the volume resistivity of the plastic film layer is more than 1 × 1016Ω·cm。
Preferably, the thickness of the plastic film layer is 1mm~2mm.
Preferably, the plastic film layer is polyvinyl chloride film.
Preferably, the plastic film layer is polyolefin elastic body thin film.
Preferably, the thickness of the glass is 2.9mm~3.5mm, and the glass is more than sun light direct beam projection ratio
90%.
Preferably, fluid sealant is covered on the bottom surface of the mounting groove, the fluid sealant is located at the metal edge frame and institute
It states between photovoltaic module.
A kind of photovoltaic module of resisting potential induced degradation provided by the invention, utilizes the plastic foil with high volume resistivity
The metal edge frame and the glass is isolated in layer, effectively reduces influence of the electric field of metal edge frame generation to photovoltaic module,
Reduce the trip migrated under the electric field action generated in the glass in the metal edge frame on the solar cell lamella
From metal ion, the potential induction attenuation phenomenon of photovoltaic module generation is thus reduced, and then improves the photoelectricity of photovoltaic module
Transfer efficiency improves its generated energy.
Description of the drawings
Fig. 1 is a kind of structure diagram of the photovoltaic module of resisting potential induced degradation provided in an embodiment of the present invention;
Fig. 2 is perspective view of the plastic film layer on solar cell lamella in the embodiment of the present invention;
Fig. 3 is the structure diagram of the metal edge frame in the embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to
The embodiments of the present invention of attached drawing description are only exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid because having obscured the present invention during unnecessary details, in the accompanying drawings only
It shows the structure and/or processing step closely related with scheme according to the present invention, and is omitted little with relationship of the present invention
Other details.
With reference to shown in Fig. 1-Fig. 3, an embodiment of the present invention provides a kind of photovoltaic module 10 of resisting potential induced degradation, including
Backboard 1, the first EVA layer 2, solar cell lamella 3, the second EVA layer 4 and the glass 5 set gradually.10 envelope of photovoltaic module
Loaded in metal edge frame 20.Mounting groove 201 is provided in the metal edge frame 20, the photovoltaic module 10 is connected to the installation
In slot 201, the setting direction of the side wall 201a of 201 both sides of mounting groove along each layer structure of the photovoltaic module 10, clamping
The fixed photovoltaic module 10.Wherein, plastic film layer 6 is provided on the glass 5, the plastic film layer 6 is located at the glass 5
Between the side wall 201a of the mounting groove 201.
In the photovoltaic module 10 of above-mentioned resisting potential induced degradation, pass through the side wall in the glass 5 and the mounting groove 201
Plastic film layer 6 between 201a is set, 10 He of photovoltaic module is isolated using the plastic film layer 6 with high volume resistivity
The metal edge frame 20 effectively reduces influence of the electric field of the generation of metal edge frame 20 to the photovoltaic module 10, subtracts
Lack and migrated under the electric field action that the glass 5 is generated in the metal edge frame 20 to the trip on the solar cell lamella 3
From metal ion, the potential induction attenuation phenomenon of the generation of photovoltaic module 10 is thus reduced, and then improves photovoltaic module 10
Photoelectric conversion efficiency improves its generated energy;And the simple structure of the photovoltaic module 10 of the resisting potential induced degradation, Yi Tong
It crosses and is realized with reference to the existing technological process of production, need increased additional production cost relatively low.
Further, as shown in Fig. 2, the solar cell lamella 3 includes multiple solar battery sheets 31, the plastics
Film layer 6 is located in the projection of the solar cell lamella 3 except the multiple solar battery sheet 31.Specifically, it is described more
A solar cell 31 is arranged in arrays, and the plastic film layer 6 structure in a ring is parallel to the glass 5 towards the sun
On the direction of energy battery lamella 3, orthographic projection of the plastic film layer 6 on the solar cell lamella 3 is located at the multiple
Except solar battery sheet 31, that is to say, orthographic projection of the plastic film layer 6 on the solar cell lamella 3 with it is described
The matrix that multiple solar cells 31 form is non-intersect, avoids the plastic film layer 6 and blocks the multiple solar cell 31
Daylighting, and influence the photoelectric conversion efficiency of the multiple solar cell 31.In the present embodiment, the plastic film layer 6 exists
Boundary phase mutual respect between the matrix that projection on the solar cell lamella 3 is formed with the multiple solar battery sheet 31
It closes, that is to say, the plastic film layer 6 does not block the multiple solar battery sheet 31 just.
To reduce the electric field of the generation of metal edge frame 20 as far as possible to influence, the modeling caused by the photovoltaic module 10
Material film layer 6 should have sufficiently high volume resistivity.Specifically, in the present embodiment, the volume resistivity of the plastic film layer 6
More than 1 × 1016Ω·cm。
Specifically, the thickness of the plastic film layer 6 is 1mm~2mm.
Illustratively, a kind of embodiment as the plastic film layer 6, the plastic film layer 6 are polyvinyl chloride film
(PVC film).Polyvinyl chloride film has good translucency, can be by Corvic and other modifying agent by rolling
Technique or blow molding process are made, and can meet high volume electricity of the photovoltaic module 10 to plastic film layer 6 of the resisting potential induced degradation
The requirement of resistance rate.
Illustratively, the another embodiment as the plastic film layer 6, the plastic film layer 6 are polyolefin elastic
Body thin film (POE films).The polyolefin elastic body thin film has good translucency and ductility, and can meet described anti-
Requirement of the photovoltaic module 10 of potential induction attenuation to the high volume resistivity of plastic film layer 6.
Illustratively, the glass 5 is embossed tempered glass for low iron, and thickness is 2.9mm~3.5mm, and the glass 5 is right
The projection of sun light direct beam is than being more than 90%.
Illustratively, the solar cell lamella 3 is arranged for several Monocrystalline silicon cell pieces or polycrystal silicon cell chip arrays
Cloth is formed, and the size of the Monocrystalline silicon cell piece and polycrystalline silicon battery plate is 125mm × 125mm or 156mm × 156mm.
Further, fluid sealant 7 is covered on the bottom surface 201b of the mounting groove 201, the fluid sealant 7 is located at the gold
Belong between frame 20 and the photovoltaic module 10.The fluid sealant 7 coordinates with the plastic film layer 6, by the photovoltaic module 10
It is mutually isolated with the metal edge frame 20, the electric field of the generation of metal edge frame 20 is further reduced to the photovoltaic module 10
Influence, further improve the resisting potential induced degradation ability of the photovoltaic module 10, further improve photovoltaic module 10
Photoelectric conversion efficiency.
In conclusion a kind of photovoltaic module 10 of resisting potential induced degradation provided in this embodiment, using with high volume
The 6 isolating metal frame 20 of plastic film layer and glass 5 of resistivity, effectively reduce the electric field of the generation of metal edge frame 20 to described
The influence of photovoltaic module 10 reduces and is migrated under the electric field action generated in the metal edge frame 20 to the solar battery sheet
Free metal ion on layer 3, thus reduces the potential induction attenuation phenomenon of the generation of photovoltaic module 10, and then improves photovoltaic
The photoelectric conversion efficiency of component 10 improves its generated energy.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any this practical relationship or sequence.Term " comprising ", "comprising" or its any other variant are intended to non-row
His property includes, so that process, method, article or equipment including a series of elements not only include those elements, and
And it further includes other elements that are not explicitly listed or further includes intrinsic for this process, method, article or equipment institute
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including institute
State in process, method, article or the equipment of element that also there are other identical elements.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of the application principle is not departed from, several improvements and modifications can also be made, for these changes and profit
Decorations, also should be regarded as the protection domain of the application.
Claims (8)
1. a kind of photovoltaic module of resisting potential induced degradation, including the backboard (1), the first EVA layer (2), solar energy set gradually
Battery lamella (3), the second EVA layer (4) and glass (5), the photovoltaic module (10) are packaged in metal edge frame (20), feature
It is, mounting groove (201) is provided in the metal edge frame (20), and the photovoltaic module (10) is connected to the mounting groove
(201) in;Wherein, be provided with plastic film layer (6) on the glass (5), the plastic film layer (6) positioned at the glass (5) and
Between the side wall (201a) of the mounting groove (201).
2. the photovoltaic module of resisting potential induced degradation according to claim 1, which is characterized in that the solar battery sheet
Layer (3) includes multiple solar battery sheets (31), and the plastic film layer (6) is in the projection position of the solar cell lamella (3)
Except the multiple solar battery sheet (31).
3. the photovoltaic module of resisting potential induced degradation according to claim 1, which is characterized in that the plastic film layer (6)
Volume resistivity be more than 1 × 1016Ω·cm。
4. the photovoltaic module of resisting potential induced degradation according to claim 1, which is characterized in that the plastic film layer (6)
Thickness be 1mm~2mm.
5. the photovoltaic module of resisting potential induced degradation according to claim 1, which is characterized in that the plastic film layer (6)
For polyvinyl chloride film.
6. the photovoltaic module of resisting potential induced degradation according to claim 1, which is characterized in that the plastic film layer (6)
For polyolefin elastic body thin film.
7. the photovoltaic module of resisting potential induced degradation according to claim 1, which is characterized in that the thickness of the glass (5)
It spends for 2.9mm~3.5mm, the glass is to the projection of sun light direct beam than being more than 90%.
8. according to the photovoltaic module of any resisting potential induced degradations of claim 1-7, which is characterized in that the mounting groove
(201) fluid sealant (7) is covered on bottom surface (201b), the fluid sealant (7) is positioned at the metal edge frame (20) and the light
Between volt component (10).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711287837.9A CN108231916B (en) | 2017-12-07 | 2017-12-07 | Photovoltaic module resistant to potential induction attenuation |
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CN201711287837.9A CN108231916B (en) | 2017-12-07 | 2017-12-07 | Photovoltaic module resistant to potential induction attenuation |
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CN108231916A true CN108231916A (en) | 2018-06-29 |
CN108231916B CN108231916B (en) | 2023-11-10 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111477704A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Method for relieving PID attenuation of photovoltaic module |
CN114023686A (en) * | 2021-11-02 | 2022-02-08 | 宿迁晶光芒光伏科技有限公司 | Automatic attaching device for solar cell panel shell and using method thereof |
CN115020521A (en) * | 2022-07-12 | 2022-09-06 | 晶澳(扬州)太阳能科技有限公司 | Solar cell module and preparation method thereof |
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CN114023686A (en) * | 2021-11-02 | 2022-02-08 | 宿迁晶光芒光伏科技有限公司 | Automatic attaching device for solar cell panel shell and using method thereof |
CN114023686B (en) * | 2021-11-02 | 2022-06-24 | 宿迁晶光芒光伏科技有限公司 | Automatic attaching device for solar cell panel shell and using method thereof |
CN115020521A (en) * | 2022-07-12 | 2022-09-06 | 晶澳(扬州)太阳能科技有限公司 | Solar cell module and preparation method thereof |
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