CN108231916B - Photovoltaic module resistant to potential induction attenuation - Google Patents
Photovoltaic module resistant to potential induction attenuation Download PDFInfo
- Publication number
- CN108231916B CN108231916B CN201711287837.9A CN201711287837A CN108231916B CN 108231916 B CN108231916 B CN 108231916B CN 201711287837 A CN201711287837 A CN 201711287837A CN 108231916 B CN108231916 B CN 108231916B
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- CN
- China
- Prior art keywords
- photovoltaic module
- plastic film
- film layer
- glass
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000006698 induction Effects 0.000 title description 2
- 239000002985 plastic film Substances 0.000 claims abstract description 40
- 229920006255 plastic film Polymers 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 25
- 238000009434 installation Methods 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 7
- 239000004800 polyvinyl chloride Substances 0.000 claims description 6
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 6
- 229920006124 polyolefin elastomer Polymers 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229910021645 metal ion Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The application discloses a photovoltaic module resistant to potential induced attenuation, which comprises a back plate, a first EVA layer, a solar cell layer, a second EVA layer and glass which are sequentially arranged. The photovoltaic module is packaged in the metal frame, a mounting groove is formed in the metal frame, and the photovoltaic module is clamped in the mounting groove. And the plastic film layer is arranged on the glass and is positioned between the glass and the side wall of the mounting groove. The photovoltaic module is isolated from the metal frame by utilizing the plastic film layer with high volume resistivity, so that free metal ions migrating to the solar cell layer under the action of an electric field generated by the metal frame are effectively reduced, the potential induced attenuation phenomenon of the photovoltaic module is weakened, and the photoelectric conversion efficiency of the photovoltaic module is further improved.
Description
Technical Field
The application relates to the technical field of photovoltaic solar energy, in particular to a photovoltaic module resistant to potential induced attenuation.
Background
In the existing photovoltaic module, a potential induced attenuation phenomenon which can seriously influence the operation reliability and stability of the photovoltaic module often occurs, in the photovoltaic module with the potential induced attenuation phenomenon, a metal frame of the photovoltaic module can generate huge voltage to influence solar cells adjacent to the periphery of the metal frame, a strong electric field formed on the metal frame can enable free metal ions such as sodium and calcium in glass of the photovoltaic module to migrate to the surface of the solar cells, and the metal ions collected on the surface of the solar cells can be further diffused into internal materials of the solar cells, so that various electrical performance parameters such as photoelectric conversion efficiency of the solar cells are influenced. The potential induced attenuation phenomenon can cause the photovoltaic module to lose more than 50% of power, and can cause huge loss to a power station using the photovoltaic module on a large scale.
Disclosure of Invention
In view of the shortcomings of the prior art, the present application provides a photovoltaic module that resists potential induced decay to solve the above-mentioned problems.
In order to achieve the above purpose, the present application adopts the following technical scheme:
the photovoltaic module is packaged in a metal frame, an installation groove is formed in the metal frame, and the photovoltaic module is clamped in the installation groove; and the plastic film layer is arranged on the glass and is positioned between the glass and the side wall of the mounting groove.
Preferably, the solar cell sheet layer comprises a plurality of solar cells, and the projection of the plastic film layer on the solar cell sheet layer is located outside the plurality of solar cells.
Preferably, the volume resistivity of the plastic film layer is greater than 1×10 16 Ω·cm。
Preferably, the thickness of the plastic film layer is 1 mm-2 mm.
Preferably, the plastic film layer is a polyvinyl chloride film.
Preferably, the plastic film layer is a polyolefin elastomer film.
Preferably, the thickness of the glass is 2.9 mm-3.5 mm, and the direct projection ratio of the glass to sunlight is more than 90%.
Preferably, the bottom surface of the mounting groove is covered with sealant, and the sealant is located between the metal frame and the photovoltaic module.
According to the photovoltaic module resistant to potential induced attenuation, the plastic film layer with high volume resistivity is used for isolating the metal frame from the glass, so that the influence of an electric field generated by the metal frame on the photovoltaic module is effectively reduced, free metal ions in the glass which migrate to the solar cell layer under the action of the electric field generated by the metal frame are reduced, the potential induced attenuation phenomenon of the photovoltaic module is reduced, the photoelectric conversion efficiency of the photovoltaic module is further improved, and the generated energy of the photovoltaic module is improved.
Drawings
FIG. 1 is a schematic structural diagram of a photovoltaic module resistant to potential induced degradation provided by an embodiment of the present application;
FIG. 2 is a schematic view of a plastic film layer projected onto a solar cell sheet layer according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a metal frame according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the following detailed description of the embodiments of the present application will be given with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the application shown in the drawings and described in accordance with the drawings are merely exemplary and the application is not limited to these embodiments.
It should be noted here that, in order to avoid obscuring the present application due to unnecessary details, only structures and/or processing steps closely related to the solution according to the present application are shown in the drawings, while other details not greatly related to the present application are omitted.
Referring to fig. 1 to 3, an embodiment of the present application provides a photovoltaic module 10 resistant to potential induced attenuation, which includes a back sheet 1, a first EVA layer 2, a solar cell layer 3, a second EVA layer 4, and glass 5 sequentially disposed. The photovoltaic module 10 is encapsulated in a metal bezel 20. The metal frame 20 is provided with an installation groove 201, the photovoltaic module 10 is clamped in the installation groove 201, and side walls 201a on two sides of the installation groove 201 are clamped and fixed along the arrangement direction of each layer of structure of the photovoltaic module 10. Wherein, a plastic film layer 6 is arranged on the glass 5, and the plastic film layer 6 is positioned between the glass 5 and the side wall 201a of the installation groove 201.
In the photovoltaic module 10 resisting potential induced attenuation, the plastic film layer 6 is arranged between the glass 5 and the side wall 201a of the mounting groove 201, the photovoltaic module 10 and the metal frame 20 are isolated by using the plastic film layer 6 with high volume resistivity, so that the influence of an electric field generated by the metal frame 20 on the photovoltaic module 10 is effectively reduced, free metal ions of the glass 5, which migrate to the solar cell sheet layer 3 under the action of the electric field generated by the metal frame 20, are reduced, the potential induced attenuation phenomenon of the photovoltaic module 10 is reduced, the photoelectric conversion efficiency of the photovoltaic module 10 is improved, and the generating capacity of the photovoltaic module is improved; in addition, the photovoltaic module 10 resistant to potential induced attenuation has a simple structure, is easy to realize by combining the existing production process flow, and has lower additional production cost.
Further, as shown in fig. 2, the solar cell layer 3 includes a plurality of solar cells 31, and the projection of the plastic film layer 6 on the solar cell layer 3 is located outside the plurality of solar cells 31. Specifically, the plurality of solar cells 31 are arranged in a matrix, the plastic film layer 6 is in an annular structure, and is parallel to the direction of the glass 5 towards the solar cell layer 3, the orthographic projection of the plastic film layer 6 on the solar cell layer 3 is located outside the plurality of solar cells 31, that is, the orthographic projection of the plastic film layer 6 on the solar cell layer 3 is not intersected with the matrix formed by the plurality of solar cells 31, so that the lighting of the plurality of solar cells 31 is prevented from being blocked by the plastic film layer 6, and the photoelectric conversion efficiency of the plurality of solar cells 31 is affected. In this embodiment, the projection of the plastic film layer 6 on the solar cell layer 3 coincides with the boundary between the matrix of the plurality of solar cells 31, that is, the plastic film layer 6 just does not shade the plurality of solar cells 31.
In order to minimize the effect of the electric field generated by the metal frame 20 on the photovoltaic module 10, the plastic film layer 6 should have a sufficiently high volume resistivity. In particular, in the present embodiment, the volume resistivity of the plastic film layer 6 is greater than 1×10 16 Ω·cm。
Specifically, the thickness of the plastic film layer 6 is 1 mm-2 mm.
Illustratively, as one embodiment of the plastic film layer 6, the plastic film layer 6 is a polyvinyl chloride film (PVC film). The polyvinyl chloride film has good light transmittance, can be prepared by a calendaring process or a blow molding process of polyvinyl chloride resin and other modifiers, and can meet the requirement of the photovoltaic module 10 for resisting potential induced attenuation on the high volume resistivity of the plastic film layer 6.
Illustratively, as another embodiment of the plastic film layer 6, the plastic film layer 6 is a polyolefin elastomer film (POE film). The polyolefin elastomer film has good light transmittance and ductility, and can meet the requirement of the photovoltaic module 10 for resisting potential induced attenuation on the high volume resistivity of the plastic film layer 6.
Illustratively, the glass 5 is low-iron embossed tempered glass having a thickness of 2.9mm to 3.5mm, and the glass 5 has a direct solar light projection ratio of greater than 90%.
Illustratively, the solar cell layer 3 is formed by arranging a plurality of monocrystalline silicon cells or polycrystalline silicon cells in an array, and the dimensions of the monocrystalline silicon cells and the polycrystalline silicon cells are 125mm×125mm or 156mm×156mm.
Further, a sealant 7 is coated on the bottom 201b of the mounting groove 201, and the sealant 7 is located between the metal frame 20 and the photovoltaic module 10. The sealant 7 is matched with the plastic film layer 6 to isolate the photovoltaic module 10 and the metal frame 20 from each other, so that the influence of an electric field generated by the metal frame 20 on the photovoltaic module 10 is further reduced, the anti-potential induced attenuation capability of the photovoltaic module 10 is further improved, and the photoelectric conversion efficiency of the photovoltaic module 10 is further improved.
In summary, according to the photovoltaic module 10 with resistance to potential induced attenuation provided in this embodiment, the plastic film layer 6 with high volume resistivity is used to isolate the metal frame 20 from the glass 5, so that the influence of the electric field generated by the metal frame 20 on the photovoltaic module 10 is effectively reduced, and free metal ions migrating to the solar cell layer 3 under the action of the electric field generated by the metal frame 20 are reduced, so that the potential induced attenuation phenomenon of the photovoltaic module 10 is weakened, the photoelectric conversion efficiency of the photovoltaic module 10 is improved, and the power generation capacity of the photovoltaic module is improved.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely illustrative of the embodiments of this application and it will be appreciated by those skilled in the art that variations and modifications may be made without departing from the principles of the application, and it is intended to cover all modifications and variations of the application as fall within the scope of the application.
Claims (4)
1. The photovoltaic module resistant to potential induced attenuation comprises a back plate (1), a first EVA layer (2), a solar cell layer (3), a second EVA layer (4) and glass (5) which are sequentially arranged, wherein the photovoltaic module (10) is packaged in a metal frame (20), and the photovoltaic module is characterized in that an installation groove (201) is formed in the metal frame (20), and the photovoltaic module (10) is clamped in the installation groove (201); wherein, a plastic film layer (6) is arranged on the glass (5), and the plastic film layer (6) is positioned between the glass (5) and the side wall (201 a) of the mounting groove (201);
the solar cell layer (3) comprises a plurality of solar cells (31), and the projection of the plastic film layer (6) on the solar cell layer (3) is positioned outside the plurality of solar cells (31); the volume resistivity of the plastic film layer (6) is more than 1 multiplied by 10 16 Omega cm, plastic film layer (6) is polyvinyl chloride film or polyolefin elastomer film, plastic film layer (6) is annular structure, just plastic film layer (6) is on a parallel with glass (5) orientation solar wafer layer (3) direction.
2. The photovoltaic module resistant to potential induced decay according to claim 1, characterized in that the thickness of the plastic film layer (6) is 1-2 mm.
3. The photovoltaic module resistant to potential induced attenuation according to claim 1, characterized in that the thickness of the glass (5) is between 2.9mm and 3.5mm, the direct solar projection ratio of the glass is greater than 90%.
4. A photovoltaic module resistant to potential induced decay according to any of claims 1-3, wherein the bottom surface (201 b) of the mounting groove (201) is covered with a sealant (7), said sealant (7) being located between the metal rim (20) and the photovoltaic module (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711287837.9A CN108231916B (en) | 2017-12-07 | 2017-12-07 | Photovoltaic module resistant to potential induction attenuation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711287837.9A CN108231916B (en) | 2017-12-07 | 2017-12-07 | Photovoltaic module resistant to potential induction attenuation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108231916A CN108231916A (en) | 2018-06-29 |
| CN108231916B true CN108231916B (en) | 2023-11-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711287837.9A Active CN108231916B (en) | 2017-12-07 | 2017-12-07 | Photovoltaic module resistant to potential induction attenuation |
Country Status (1)
| Country | Link |
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| CN (1) | CN108231916B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477704A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Method for relieving PID attenuation of photovoltaic module |
| CN114023686B (en) * | 2021-11-02 | 2022-06-24 | 宿迁晶光芒光伏科技有限公司 | Automatic attaching device for solar cell panel shell and using method thereof |
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| Publication number | Publication date |
|---|---|
| CN108231916A (en) | 2018-06-29 |
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