CN204905272U - Brilliant silicon solar cell subassembly of resistant sand blown by wind of anti PID - Google Patents
Brilliant silicon solar cell subassembly of resistant sand blown by wind of anti PID Download PDFInfo
- Publication number
- CN204905272U CN204905272U CN201520741597.5U CN201520741597U CN204905272U CN 204905272 U CN204905272 U CN 204905272U CN 201520741597 U CN201520741597 U CN 201520741597U CN 204905272 U CN204905272 U CN 204905272U
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- CN
- China
- Prior art keywords
- solar cell
- card frame
- pid
- silicon solar
- polyolefin layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to a brilliant silicon solar cell subassembly of resistant sand blown by wind of anti PID, it include the solar cell cluster, range upon range of in the polyolefin layer of solar cell cluster both sides, range upon range of in one of them front bezel glass layer on the polyolefin layer, range upon range of in another backplate on the polyolefin layer, be used for cliping the backplate with the frame on front bezel glass layer and installing be used for on the backplate connecting the terminal box of solar cell cluster and outside line. Through setting up the polyolefin layer in solar cell cluster both sides, can reduce the steam transmissivity, avoided the ion mobility phenomenon that appears in the encapsulating material under the high voltage, increase the anti PID performance of subassembly, during the subassembly life -span the PID phenomenon can not appear.
Description
Technical field
The utility model belongs to photovoltaic solar cell field, is specifically related to a kind of anti-PID crystal silicon solar batteries of resistance to dust storm assembly.
Background technology
Solar energy is the inexhaustible regenerative resources of the mankind, is also clean energy resource, does not produce any environmental pollution.In the middle of effective utilization of solar energy, it is research field with fastest developing speed, most active in the last few years that solar photoelectric utilizes.Crystal silicon solar energy battery is mainly based on semi-conducting material, and its operation principle is, after utilizing photoelectric material to absorb luminous energy, the device that opto-electronic conversion reaction directly becomes light energy conversion electric energy occurs.
At present, the primary structure of conventional crystalline silicon solar assembly is: toughened glass layer, ethene and vinyl acetate ester block copolymer, cell piece, backboard and aluminum alloy frame, whole lightweight packages is about about 20kg.Research in recent years shows, is present in the high voltage between circuit in Crystalline Silicon PV Module and its grounded metal frame, can causes the continuous decrement of the photovoltaic performance of assembly.And conventional anti-PID(PotentialInducedDegradation, i.e. potential induction attenuation) assembly is after use 3-5, and obviously, during assembly life-span, power attenuation is too much, and assembly life-span shortens, and causes power station energy output obviously to decline in component power decay.Existing conventional crystalline silicon assembly backboard generally adopts dual coating type backboard, and its husky knockout test is generally about 5L/ μm, and anti-blown sand ability is more weak, and common fluorine-containing backboard is when reclaiming, and has fluoride and produces, environment is had to the risk of fluoride pollution.
Summary of the invention
The utility model object provides a kind of anti-PID crystal silicon solar batteries of resistance to dust storm assembly to overcome the deficiencies in the prior art.
For achieving the above object, the technical solution adopted in the utility model is: a kind of anti-PID crystal silicon solar batteries of resistance to dust storm assembly, it comprises solar cell string, be laminated in the polyolefin layer of described solar cell string both sides, be laminated in wherein polyolefin layer described on header board glassy layer, the backboard be laminated on polyolefin layer described in another, for clamping the frame of described backboard and described header board glassy layer and being arranged on described backboard for being connected the terminal box of described solar cell string and outside line.
Optimally, the material of described backboard is polyamide.
Further, described solar cell string is formed by least one root bead band serial connection by least two solar battery sheets.
Further, described frame comprise framework, one-body molded and be positioned at the card frame of its medial surface with described framework; Described card Kuang You tri-road, is formed at the top of described framework medial surface, bottom and middle part respectively; The card frame that definition is formed at described framework medial surface top is the first card frame, the card frame be formed in the middle part of described framework medial surface is the second card frame, the card frame be formed at bottom described framework medial surface is the 3rd card frame, and described header board glassy layer and described back sheet clip are located between described first card frame and described second card frame.
Optimally, described polyolefin layer thickness is 0.25 ~ 0.8mm
Because technique scheme is used, the utility model compared with prior art has following advantages: the anti-PID of the utility model crystal silicon solar batteries of resistance to dust storm assembly, by arranging polyolefin layer in solar cell string both sides, water vapor transmittance can be reduced, avoid the Ion transfer phenomenon occurred in encapsulating material under high voltages, increase the anti-PID performance of assembly, during assembly life-span, there will not be PID phenomenon.
Accompanying drawing explanation
Accompanying drawing 1 is the structural representation of the anti-PID of the utility model crystal silicon solar batteries of resistance to dust storm assembly;
Wherein, 1, solar cell string; 11, solar battery sheet; 12, welding; 2, polyolefin layer; 3, header board glassy layer; 4, backboard; 5, terminal box; 6, frame; 61, framework; 62, the first card frame; 63, the second card frame; 64, the 3rd card frame.
Embodiment
Below in conjunction with embodiment shown in the drawings, the utility model is further described.
The anti-PID crystal silicon solar batteries of resistance to dust storm assembly as shown in Figure 1, mainly comprises solar cell string 1, polyolefin layer 2, header board glassy layer 3, backboard 4, terminal box 5 and frame 6.
Wherein, solar cell string 1 is formed by least one root bead band 12 serial connection by least two solar battery sheets 11, and welding 12 is connected to the back side of another solar battery sheet 11 by the front of a solar battery sheet 11.Polyolefin layer 2 has two-layer, and they are layered in the both sides of solar cell string 1 respectively; It can adopt heat curing-type or thermoplastics type's as required, thickness is preferably 0.25 ~ 0.8mm, its design parameter is: wavelength is the visible light transmittance rate > 90% of 382 ~ 1100nm, lateral shrinkage≤2%, longitudinal contraction rate≤5%, the degree of cross linking is 60 ~ 80%, water absorption rate≤0.01%.Header board glassy layer 3 is laminated in wherein on one deck polyolefin layer 2, and backboard 4 is laminated on another strata olefin layer 2.Frame 6 is for clamping backboard 4 and header board glassy layer 3; It comprises framework 61, one-body molded and be positioned at least twice card frame of its medial surface with framework 61, header board glassy layer 3 and backboard 4 are folded between card frame.Terminal box 5 is arranged on backboard 4, for connecting solar cell string 1 and outside line, adopts the back of the body to connect the common terminal box of formula.Such solar module creates beyond thought effect: the water vapor transmittance reducing solar battery sheet, avoid the middle Ion transfer phenomenon occurred of encapsulating material (polyolefin) under high voltages, thus increase the anti-PID performance of assembly, during assembly life-span, there will not be PID phenomenon.
In the present embodiment, card Kuang You tri-road, is formed at the top of framework 61 medial surface, bottom and middle part respectively; The card frame that definition is formed at framework 61 medial surface top is the first card frame 62, the card frame be formed in the middle part of framework 61 medial surface is the second card frame 63, the card frame be formed at bottom framework 61 medial surface is the 3rd card frame 64, and header board glassy layer 3 and backboard 4 are located between the first card frame 62 and the second card frame 63.The material of backboard 4 is polyamide, and its design parameter is: water vapor rejection 1.25g/dm
2, reflecting rate higher than conventional backing plate about 10%, the traditional fluorine-containing backboard of PET of abandoning tradition, meet without fluoride pollution requirement, environmental protection, also creates beyond thought effect: the anti-blown sand ability more than 3 times that improve assembly, and resistant to ammonia alkaline resistance properties also more common backboard is excellent; Due to anti-PID and the anti-blown sand performance of this crystal silicon solar batteries assembly, its scope of application can be expanded, be applied to the area of hot and humid and high dust storm.
Above-described embodiment, only for technical conceive of the present utility model and feature are described, its object is to person skilled in the art can be understood content of the present utility model and implement according to this, can not limit protection range of the present utility model with this.All equivalences done according to the utility model Spirit Essence change or modify, and all should be encompassed within protection range of the present utility model.
Claims (5)
1. the anti-PID crystal silicon solar batteries of a resistance to dust storm assembly, is characterized in that: it comprises solar cell string, be laminated in the polyolefin layer of described solar cell string both sides, be laminated in wherein polyolefin layer described on header board glassy layer, the backboard be laminated on polyolefin layer described in another, for clamping the frame of described backboard and described header board glassy layer and being arranged on described backboard for being connected the terminal box of described solar cell string and outside line.
2. the anti-PID crystal silicon solar batteries of resistance to dust storm assembly according to claim 1, is characterized in that: the material of described backboard is polyamide.
3. the anti-PID crystal silicon solar batteries of resistance to dust storm assembly according to claim 2, is characterized in that: described solar cell string is formed by least one root bead band serial connection by least two solar battery sheets.
4. the anti-PID crystal silicon solar batteries of resistance to dust storm assembly according to claim 2, is characterized in that: described frame comprises framework, one-body molded and be positioned at the card frame of its medial surface with described framework; Described card Kuang You tri-road, is formed at the top of described framework medial surface, bottom and middle part respectively; The card frame that definition is formed at described framework medial surface top is the first card frame, the card frame be formed in the middle part of described framework medial surface is the second card frame, the card frame be formed at bottom described framework medial surface is the 3rd card frame, and described header board glassy layer and described back sheet clip are located between described first card frame and described second card frame.
5. the anti-PID crystal silicon solar batteries of resistance to dust storm assembly according to claim 1, is characterized in that: described polyolefin layer thickness is 0.25 ~ 0.8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520741597.5U CN204905272U (en) | 2015-09-23 | 2015-09-23 | Brilliant silicon solar cell subassembly of resistant sand blown by wind of anti PID |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520741597.5U CN204905272U (en) | 2015-09-23 | 2015-09-23 | Brilliant silicon solar cell subassembly of resistant sand blown by wind of anti PID |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204905272U true CN204905272U (en) | 2015-12-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520741597.5U Expired - Fee Related CN204905272U (en) | 2015-09-23 | 2015-09-23 | Brilliant silicon solar cell subassembly of resistant sand blown by wind of anti PID |
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| Country | Link |
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| CN (1) | CN204905272U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017049798A1 (en) * | 2015-09-23 | 2017-03-30 | 苏州腾晖光伏技术有限公司 | Pid-resistant and wind sand resistant crystalline silicon solar cell assembly |
-
2015
- 2015-09-23 CN CN201520741597.5U patent/CN204905272U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017049798A1 (en) * | 2015-09-23 | 2017-03-30 | 苏州腾晖光伏技术有限公司 | Pid-resistant and wind sand resistant crystalline silicon solar cell assembly |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161219 Address after: 810000 Qinghai province Xining City Chengdong District No. 5 Kunlun East Road, New Material Industrial Park No. 1 Building 2 floor Patentee after: QINGHAI ZHONGKE NEW ENERGY TESTING CENTER Co.,Ltd. Address before: 215542 Jiangsu city of Suzhou province Changshu Shajiabang Changkun Industrial Park Teng Hui Road No. 1 Patentee before: ZHONGLI TALESUN SOLAR Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151223 Termination date: 20210923 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |