CN206023679U - A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component - Google Patents
A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component Download PDFInfo
- Publication number
- CN206023679U CN206023679U CN201620837744.3U CN201620837744U CN206023679U CN 206023679 U CN206023679 U CN 206023679U CN 201620837744 U CN201620837744 U CN 201620837744U CN 206023679 U CN206023679 U CN 206023679U
- Authority
- CN
- China
- Prior art keywords
- polysilicon chip
- polycrystalline silicon
- shatter
- photovoltaic polysilicon
- battery plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 64
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 39
- 230000003712 anti-aging effect Effects 0.000 title claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 26
- 230000001070 adhesive effect Effects 0.000 claims abstract description 26
- 239000003292 glue Substances 0.000 claims abstract description 19
- 239000005336 safety glass Substances 0.000 claims abstract description 6
- 229920001971 elastomer Polymers 0.000 claims description 9
- 239000005060 rubber Substances 0.000 claims description 9
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 230000000379 polymerizing effect Effects 0.000 claims description 4
- 229920003051 synthetic elastomer Polymers 0.000 claims description 4
- 239000005061 synthetic rubber Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims 1
- 239000005062 Polybutadiene Substances 0.000 abstract description 11
- 229920002857 polybutadiene Polymers 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 5
- 244000043261 Hevea brasiliensis Species 0.000 description 4
- 229920003052 natural elastomer Polymers 0.000 description 4
- 229920001194 natural rubber Polymers 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- OCKPCBLVNKHBMX-UHFFFAOYSA-N butylbenzene Chemical compound CCCCC1=CC=CC=C1 OCKPCBLVNKHBMX-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001084 poly(chloroprene) Polymers 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620837744.3U CN206023679U (en) | 2016-08-04 | 2016-08-04 | A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620837744.3U CN206023679U (en) | 2016-08-04 | 2016-08-04 | A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206023679U true CN206023679U (en) | 2017-03-15 |
Family
ID=58246493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201620837744.3U Expired - Fee Related CN206023679U (en) | 2016-08-04 | 2016-08-04 | A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN206023679U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106995912A (en) * | 2017-05-27 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of framework for being used to fix mask plate |
-
2016
- 2016-08-04 CN CN201620837744.3U patent/CN206023679U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106995912A (en) * | 2017-05-27 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of framework for being used to fix mask plate |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Lin Junguang Inventor after: Zhang Yonghong Inventor after: Yang Xiping Inventor before: Lin Junguang |
|
CB03 | Change of inventor or designer information | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170719 Address after: 210000 No. 123 West Buddha Road, Jiangning Development Zone, Jiangsu, Nanjing, China Patentee after: China Sunergy (Nanjing) Co., Ltd. Address before: 516000 Guangdong province Huizhou City Zhongkai high tech Zone Harjin champagne town A Building 2 unit 205 Patentee before: Lin Junguang |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170315 Termination date: 20180804 |
|
CF01 | Termination of patent right due to non-payment of annual fee |