CN206023679U - A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component - Google Patents

A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component Download PDF

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Publication number
CN206023679U
CN206023679U CN201620837744.3U CN201620837744U CN206023679U CN 206023679 U CN206023679 U CN 206023679U CN 201620837744 U CN201620837744 U CN 201620837744U CN 206023679 U CN206023679 U CN 206023679U
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CN
China
Prior art keywords
polysilicon chip
polycrystalline silicon
shatter
photovoltaic polysilicon
battery plate
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Expired - Fee Related
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CN201620837744.3U
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Chinese (zh)
Inventor
林俊广
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CHINA SUNERGY (NANJING) Co Ltd
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Individual
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Priority to CN201620837744.3U priority Critical patent/CN206023679U/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Abstract

The utility model discloses a kind of shatter-resistant anti-aging photovoltaic polysilicon chip component, the inside of the fixed frame is installed with polycrystalline silicon battery plate, the surface of the polycrystalline silicon battery plate is provided with printing opacity fixed strip, the polycrystalline silicon battery plate includes photovoltaic polysilicon chip, the surface of the photovoltaic polysilicon chip is adhesive with butadiene rubber layer, the bottom of the photovoltaic polysilicon chip is fixedly installed backboard, the upper end face of the backboard is fitted with antiultraviolet film, the upper end of the antiultraviolet film is provided with EVA adhesive glues, polysilicon body is installed in the middle part of the EVA adhesive glues, the EVA adhesive glues are adhesive with ultrawhite safety glass by antiultraviolet film, the integrality of the device not only protection device, anti-collision and anti-fall, reduce infringement of the ultraviolet to device, improve service life and the electricity conversion of device.

Description

A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component
Technical field
The utility model belongs to photovoltaic polysilicon chip technical field, and in particular to a kind of shatter-resistant anti-aging photovoltaic polysilicon chip Component.
Background technology
Energy shortage and environmental pollution are two significant problems that the mankind are faced, and become the master of international community's economic development Want bottleneck, the economic and environment-friendly sustainable new forms of energy for using, it has also become one of important energy source instantly, wherein especially using solar energy as The regenerative resource of cleanliness without any pollution, used as the important component part solar energy that new forms of energy solve current energy shortage and pollution Volt GENERATION MARKET is vigorously developed, and between past 10 years, solar cell market is increased rapidly with 40% ratio every year, its Middle crystal-silicon solar cell occupies the market share of solar cell nearly 90%, silicon wafer in crystalline silicon solar cell modules Cost accounts for the 50% of solar cell totle drilling cost, but the polysilicon chip that is developed at present is after finalization of the manufacture, due to main There is glass product to fix, cause which frangible, increase cost, and inner member is old caused by being irradiated due to the long-time of ultraviolet Change, affect the normal operation of device, reduce service life and the optoelectronic transformation efficiency of device.
Utility model content
The purpose of this utility model is to provide a kind of shatter-resistant and transformation efficiency high photovoltaic polycrystal silicon cell component, to solve The problem proposed in certainly above-mentioned background technology.
For achieving the above object, the utility model provides following technical scheme:A kind of shatter-resistant anti-aging photovoltaic polysilicon chip Component, including fixed frame, the inside of the fixed frame is installed with polycrystalline silicon battery plate, the polycrystalline silicon battery plate Surface is provided with printing opacity fixed strip, and the polycrystalline silicon battery plate includes photovoltaic polysilicon chip, the surface of the photovoltaic polysilicon chip Butadiene rubber layer is adhesive with, the bottom of the photovoltaic polysilicon chip is fixedly installed backboard, the upper end face laminating of the backboard The upper end for having antiultraviolet film, the antiultraviolet film is provided with EVA adhesive glues, and the middle part of the EVA adhesive glues is installed There is polysilicon body, the EVA adhesive glues are adhesive with ultrawhite safety glass by antiultraviolet film.
Preferably, the fixed frame is made up of stainless steel aluminum alloy material, and the outside corner of the fixed frame Rounded corner is provided with, Rubber shock-absorbing pad on the outside of rounded corner, is coated with.
Preferably, the butadiene rubber layer is that synthetic rubber is obtained by polymerizing butadiene.
Preferably, the printing opacity fixed strip is at least provided with five groups, and the two ends of printing opacity fixed strip respectively with fixed frame The upper and lower both sides clamping in inside.
Technique effect of the present utility model and advantage:The shatter-resistant anti-aging photovoltaic polysilicon chip component, stainless steel aluminum alloy The fixed frame that material is made, outside corner are provided with rounded corner, are coated with Rubber shock-absorbing pad on the outside of rounded corner, are carrying Process prevent from touching turning caused by breakage scrap, and the photovoltaic polysilicon chip of inside is fixed by printing opacity fixed strip, Increase the stability of polycrystalline silicon battery plate and fixed frame, four side walls of polycrystalline silicon battery plate are adhesive with butadiene rubber along side Layer, greatly the integrality of the polycrystalline silicon battery plate of protection, improves anti-fragility, is attached to EVA bondings by antiultraviolet film The both sides up and down of glue, prevent from causing the quick aging of EVA adhesive glues to affect electricity conversion, the device because of ultraviolet long-term irradiation Not only the integrality of protection device, anti-collision and anti-fall, reduce infringement of the ultraviolet to device, improve service life and the photoelectricity of device Transformation efficiency.
Description of the drawings
Fig. 1 is structural representation of the present utility model;
Fig. 2 is polycrystalline silicon battery plate structural representation of the present utility model;
Fig. 3 is polycrystalline silicon battery plate section view figure structure schematic representation of the present utility model.
In figure:1 fixed frame, 2 polycrystalline silicon battery plates, 3 printing opacity fixed strips, 4 butadiene rubber layers, 5 photovoltaic polysilicon chips, 6 Ultrawhite safety glass, 7 polysilicon bodies, 8 backboards, 9 EVA adhesive glues, 10 antiultraviolet films.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole Embodiment.Embodiment in based on the utility model, those of ordinary skill in the art are not under the premise of creative work is made The every other embodiment for being obtained, belongs to the scope of the utility model protection.
The utility model provides a kind of shatter-resistant anti-aging photovoltaic polysilicon chip component as Figure 1-3, including fixation Framework 1, the inside of the fixed frame 1 are installed with polycrystalline silicon battery plate 2, and the surface of the polycrystalline silicon battery plate 2 is arranged There are printing opacity fixed strip 3, the polycrystalline silicon battery plate 2 to include that photovoltaic polysilicon chip 5, the surface of the photovoltaic polysilicon chip 5 are pasted The bottom for having butadiene rubber layer 4, the photovoltaic polysilicon chip 5 is fixedly installed backboard 8, the upper end face laminating of the backboard 8 The upper end for having antiultraviolet film 10, the antiultraviolet film 10 is provided with EVA adhesive glues 9, in the EVA adhesive glues 9 Portion is provided with polysilicon body 7, and the EVA adhesive glues 9 are adhesive with ultrawhite safety glass 6 by antiultraviolet film 10.
Further, the fixed frame 1 is made up of stainless steel aluminum alloy material, and the outside of the fixed frame 1 Corner is provided with rounded corner, is coated with Rubber shock-absorbing pad on the outside of rounded corner, as component is substantially by glass and polysilicon chip Etc. crushing device constitute, thus with rounded corner and Rubber shock-absorbing pad fixed frame 1 greatly reduce turning collision cause Damage, improve product end product quality.
Further, the butadiene rubber layer 4 is that synthetic rubber is obtained by polymerizing butadiene, with natural rubber and butylbenzene rubber Glue is compared, and the cold resistance of the butadiene rubber after sulfuration, wearability and elasticity are especially excellent, is generated heat few under dynamic load, resistance to ag(e)ing Fair, easily it is used in combination with natural rubber, neoprene or nitrile rubber, improves the integrality of polycrystalline silicon battery plate 2.
Further, the printing opacity fixed strip 3 is at least provided with five groups, and the two ends of printing opacity fixed strip 3 respectively with fixation The upper and lower both sides clamping in the inside of framework 1, multigroup printing opacity fixed strip 3 constitute a fixed net, prevent the broken of polycrystalline silicon battery plate 2 Split.
Operation principle:The fixed frame 1 being made up of stainless steel aluminum alloy material, on the outside of which, corner is provided with rounded corner, Rubber shock-absorbing pad is coated with the outside of rounded corner, as component is made up of crushing devices such as glass and polysilicon chips substantially, therefore Fixed frame 1 with rounded corner and Rubber shock-absorbing pad is damaged caused by greatly reducing turning collision, improve product into Quality, the inside of fixed frame 1 are installed with polycrystalline silicon battery plate 2, and the surface of polycrystalline silicon battery plate 2 is provided with printing opacity admittedly Determine bar 3, multigroup printing opacity fixed strip 3 constitutes a fixed net, prevents the fragmentation of polycrystalline silicon battery plate 2, polycrystalline silicon battery plate 2 from including Photovoltaic polysilicon chip 5, the surface of photovoltaic polysilicon chip 5 are adhesive with butadiene rubber layer 4, and butadiene rubber layer 4 is by polymerizing butadiene Prepared synthetic rubber, compared with natural rubber and butadiene-styrene rubber, the cold resistance of the butadiene rubber after sulfuration, wearability and elasticity are special Unexcellent, to generate heat under dynamic load few, resistance to ag(e)ing is fair, is easily used in combination with natural rubber, neoprene or nitrile rubber, improves The integrality of polycrystalline silicon battery plate 2, the bottom of photovoltaic polysilicon chip 5 are fixedly installed backboard 8, the upper end face laminating of backboard 8 The upper end for having antiultraviolet film 10, antiultraviolet film 10 is provided with EVA adhesive glues 9, and the middle part of EVA adhesive glues 9 is provided with Polysilicon body 7, EVA adhesive glues 9 are adhesive with ultrawhite safety glass 6 by antiultraviolet film 10, and antiultraviolet film 10 stops Ultraviolet irradiation, greatly protects device, reduces the aging decay of polysilicon members.
Finally it should be noted that:Preferred embodiment of the present utility model is the foregoing is only, this is not limited to Utility model, although being described in detail to the utility model with reference to the foregoing embodiments, for those skilled in the art For, which still can be modified to the technical scheme described in foregoing embodiments, or to which part technical characteristic Equivalent is carried out, all within spirit of the present utility model and principle, any modification, equivalent substitution and improvements that is made etc., Should be included within protection domain of the present utility model.

Claims (4)

1. a kind of shatter-resistant anti-aging photovoltaic polysilicon chip component, including fixed frame(1), it is characterised in that:The fixed frame (1)Inside be installed with polycrystalline silicon battery plate(2), the polycrystalline silicon battery plate(2)Surface be provided with printing opacity fixed strip (3), the polycrystalline silicon battery plate(2)Including photovoltaic polysilicon chip(5), the photovoltaic polysilicon chip(5)Surface be adhesive with suitable Buna layer(4), the photovoltaic polysilicon chip(5)Bottom be fixedly installed backboard(8), the backboard(8)Upper end face It is fitted with antiultraviolet film(10), the antiultraviolet film(10)Upper end be provided with EVA adhesive glues(9), the EVA glue Gum deposit(9)Middle part polysilicon body is installed(7), the EVA adhesive glues(9)By antiultraviolet film(10)It is adhesive with ultrawhite Safety glass(6).
2. a kind of shatter-resistant anti-aging photovoltaic polysilicon chip component according to claim 1, it is characterised in that:The fixed frame Frame(1)It is made up of stainless steel aluminum alloy material, and the fixed frame(1)Outside corner be provided with rounded corner, circle falls Rubber shock-absorbing pad is coated with the outside of angle.
3. a kind of shatter-resistant anti-aging photovoltaic polysilicon chip component according to claim 1, it is characterised in that:The suitable fourth rubber Glue-line(4)It is that synthetic rubber is obtained by polymerizing butadiene.
4. a kind of shatter-resistant anti-aging photovoltaic polysilicon chip component according to claim 1, it is characterised in that:The printing opacity is solid Determine bar(3)At least provided with five groups, and printing opacity fixed strip(3)Two ends respectively with fixed frame(1)The upper and lower both sides card in inside Connect.
CN201620837744.3U 2016-08-04 2016-08-04 A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component Expired - Fee Related CN206023679U (en)

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Application Number Priority Date Filing Date Title
CN201620837744.3U CN206023679U (en) 2016-08-04 2016-08-04 A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component

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Application Number Priority Date Filing Date Title
CN201620837744.3U CN206023679U (en) 2016-08-04 2016-08-04 A kind of shatter-resistant anti-aging photovoltaic polysilicon chip component

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CN206023679U true CN206023679U (en) 2017-03-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106995912A (en) * 2017-05-27 2017-08-01 京东方科技集团股份有限公司 A kind of framework for being used to fix mask plate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106995912A (en) * 2017-05-27 2017-08-01 京东方科技集团股份有限公司 A kind of framework for being used to fix mask plate

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CB03 Change of inventor or designer information

Inventor after: Lin Junguang

Inventor after: Zhang Yonghong

Inventor after: Yang Xiping

Inventor before: Lin Junguang

CB03 Change of inventor or designer information
TR01 Transfer of patent right

Effective date of registration: 20170719

Address after: 210000 No. 123 West Buddha Road, Jiangning Development Zone, Jiangsu, Nanjing, China

Patentee after: China Sunergy (Nanjing) Co., Ltd.

Address before: 516000 Guangdong province Huizhou City Zhongkai high tech Zone Harjin champagne town A Building 2 unit 205

Patentee before: Lin Junguang

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170315

Termination date: 20180804

CF01 Termination of patent right due to non-payment of annual fee