CN106601848A - Crystalline silicon photovoltaic module - Google Patents

Crystalline silicon photovoltaic module Download PDF

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Publication number
CN106601848A
CN106601848A CN201611094525.1A CN201611094525A CN106601848A CN 106601848 A CN106601848 A CN 106601848A CN 201611094525 A CN201611094525 A CN 201611094525A CN 106601848 A CN106601848 A CN 106601848A
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CN
China
Prior art keywords
crystalline silicon
layer
photovoltaic
refraction
module
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Pending
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CN201611094525.1A
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Chinese (zh)
Inventor
梁结平
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Individual
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Individual
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Priority to CN201611094525.1A priority Critical patent/CN106601848A/en
Publication of CN106601848A publication Critical patent/CN106601848A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Abstract

The invention relates to a crystalline silicon photovoltaic module, which comprises photovoltaic glass, a front-layer film, a plurality of crystalline silicon cells arranged in an array at intervals, a rear-layer film and a photovoltaic backplane, wherein the photovoltaic glass, the front-layer film, the crystalline silicon cells, the rear-layer film and the photovoltaic backplane are sequentially laminated and glued; the photovoltaic glass is high-transmission glass, a pair of reflection parts and a pair of refraction parts are arranged in the photovoltaic glass between two adjacent crystalline silicon cells, the pair of reflection parts is located between the pair of refraction parts, and incident light is reflected through the reflection parts, then irradiates the refraction parts, is then refracted through the refraction parts and then irradiates the crystalline silicon cells. The crystalline silicon photovoltaic module greatly improves the photon utilization rate and the crystalline silicon photovoltaic module output power, and the photoelectric conversion efficiency of the crystalline silicon photovoltaic module is high.

Description

Crystalline Silicon PV Module
Technical field
The present invention relates to field of photovoltaic technology, more particularly to a kind of Crystalline Silicon PV Module.
Background technology
Solar energy is inexhaustible, the nexhaustible regenerative resource of the mankind, will not produce any environmental pollution, too In the effectively utilizes of positive energy, photovoltaic technology has stepped into daily life, wherein, wide variety of crystal silicon solar Battery exactly absorbs luminous energy using Crystalline Silicon PV Module, opto-electronic conversion occurs so as to produce electric energy.The crystal for being used at present Silicon photovoltaic module includes photovoltaic glass, front adhesive film, some crystalline silicon battery plates of spaced array arrangement, rear layer glued membrane and photovoltaic Backboard, photovoltaic glass, front adhesive film, some crystalline silicon battery plates, rear layer glued membrane and photovoltaic back stack gradually gluing, light from Photovoltaic glass is injected, and the light incided on cell piece is utilized, and the light incided in adjacent cell piece gap does not obtain profit With this directly affects the utilization rate of photon, and the output of photovoltaic module is undesirable.
The content of the invention
Needed for of the invention, the technical problem of solution is:A kind of Crystalline Silicon PV Module for improving photon utilization rate is provided.
In order to solve the above problems, the technical solution used in the present invention is:Crystalline Silicon PV Module, which includes photovoltaic glass Glass, front adhesive film, some crystalline silicon battery plates of spaced array arrangement, rear layer glued membrane and photovoltaic back, photovoltaic glass, front layer glue Film, crystalline silicon battery plate, rear layer glued membrane and photovoltaic back stack gradually gluing, and the photovoltaic glass is high transmission glass, in place A pair of reflecting parts and a pair of refraction parts, a pair of reflecting parts are provided with photovoltaic glass between adjacent two crystalline silicon battery plates Between a pair of refraction parts, refraction part is mapped to after the reflected portion's reflection of incident ray, then is mapped to crystal Jing after refraction part refraction On silicon cell, weather-proof and aqueous vapor separation layer that the photovoltaic back includes stacking gradually, the first adhesive linkage, ultraviolet isolating Layer, the second adhesive linkage, enhancement layer, the 3rd adhesive linkage and reflection and tack coat.
Preferably, described refraction part is flushed with the edge of crystalline silicon battery plate.
Preferably, described reflecting part and photovoltaic glass bottom surface inclination angle are 65 °, the refraction part and photovoltaic glass bottom surface Inclination angle is 90 °.
Preferably, described weather-proof and aqueous vapor separation layer is PVDF layers, the thickness of the PVDF layers is 50~70 μm.
Preferably, the UV-blocking layer is white pet layer, the thickness of the white pet layer is 30~60 μm.
Preferably, the enhancement layer is PET biaxially oriented laminated films, the thickness of the PET biaxially oriented laminated films is 260~350 μm.
Preferably, the reflection and tack coat are white PE layers, the thickness of the white PE layers is 40~80 μm.
Preferably, first adhesive linkage, second adhesive linkage or the 3rd adhesive linkage are polyurethane or propylene The thickness of sour glue-line, the polyurethane or acrylic acid glue-line is 3~10 μm.
The invention has the beneficial effects as follows:Crystalline Silicon PV Module towards the sun work when, light is injected from photovoltaic glass, is entered The light being mapped on crystalline silicon battery plate is utilized, and the light Jing diffuse-reflectance portion incided in adjacent crystal silicon cell gap occurs Refraction part is mapped to after reflection, and is mapped on crystalline silicon battery plate after refraction part is reflected, so substantially increase the profit of photon With rate and the output of Crystalline Silicon PV Module, the photoelectric transformation efficiency height of Crystalline Silicon PV Module.
Description of the drawings
Fig. 1 is the structural representation of Crystalline Silicon PV Module of the present invention.
Fig. 2 is the light line reflection between adjacent crystal silicon cell and refraction route schematic diagram.
Fig. 3 is the structural representation of the photovoltaic back of Crystalline Silicon PV Module of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings and preferred embodiment is described in further detail to technical solutions according to the invention.
As Figure 1-3, the Crystalline Silicon PV Module described in the present embodiment, including photovoltaic glass 1, front adhesive film 2, interval Some crystalline silicon battery plates 3, rear layer glued membrane 4 and photovoltaic back 5 that array is arranged, photovoltaic glass 1, front adhesive film 2, crystalline silicon electricity Pond piece 3, rear layer glued membrane 4 and photovoltaic back 5 stack gradually carry out under gluing, and the vacuum environment in laminating machine it is gluing solid Change, fixed border 6 is installed in Crystalline Silicon PV Module surrounding then.The photovoltaic glass 1 is high transmission glass, positioned at adjacent A pair of diffuse-reflectance portions 11 and a pair of refraction parts 12 are provided with photovoltaic glass between two crystalline silicon battery plates 3, a pair unrestrained anti- Portion 11 is penetrated between a pair of refraction parts 12, incident ray is mapped to refraction part 12, then Jing refraction parts Jing after the reflection of diffuse-reflectance portion 11 It is mapped on crystalline silicon battery plate 3 after 12 refractions, weather-proof and aqueous vapor separation layer 51 that the photovoltaic back 5 includes stacking gradually, the One adhesive linkage 52, UV-blocking layer 53, the second adhesive linkage 54, enhancement layer 55, the 3rd adhesive linkage 56 and reflection and tack coat 57。
In the present embodiment, described refraction part 12 is flushed with the edge of crystalline silicon battery plate 3, described diffuse-reflectance portion 11 with The bottom surface inclination angle of photovoltaic glass 1 is 65 °, and the refraction part 12 is 90 ° with 1 bottom surface inclination angle of photovoltaic glass, described weather-proof and steam Barrier layer 51 is PVDF layers, and the thickness of the PVDF layers is 50~70 μm, and the UV-blocking layer 53 is white pet layer, institute The thickness for stating white pet layer is 30~60 μm, and the enhancement layer 55 is PET biaxially oriented laminated films, and the PET biaxial tensiones are thin The thickness of film layer is 260~350 μm, and the reflection and tack coat 57 are white PE layers, the thickness of the white PE layers is 40~ 80 μm, first adhesive linkage 52, second adhesive linkage 54 or the 3rd adhesive linkage 56 are polyurethane or acrylic acid glue-line, The thickness of the polyurethane or acrylic acid glue-line is 3~10 μm.
Crystalline Silicon PV Module towards the sun work when, light is injected from photovoltaic glass 1, incides crystalline silicon battery plate 3 On light be utilized, incide after light in 3 gap of adjacent crystal silicon cell occurs reflection Jing diffuse-reflectance portion 11 and be mapped to folding Portion 12 is penetrated, and is mapped on crystalline silicon battery plate 3 after refraction part 12 is reflected, made full use of and be injected into adjacent crystal silicon electricity The light in 3 gap of pond piece, so substantially increases the output of the utilization rate and Crystalline Silicon PV Module of photon, crystalline silicon light The photoelectric transformation efficiency of volt component is high.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as Protection scope of the present invention.

Claims (8)

1. Crystalline Silicon PV Module, it is characterised in that:The Crystalline Silicon PV Module includes photovoltaic glass, front adhesive film, interval Some crystalline silicon battery plates of array arrangement, rear layer glued membrane and photovoltaic back, photovoltaic glass, front adhesive film, crystalline silicon battery plate, Layer glued membrane and photovoltaic back stack gradually gluing afterwards, and the photovoltaic glass is high transmission glass, positioned at adjacent two crystalline silicons Be provided with a pair of reflecting parts and a pair of refraction parts in photovoltaic glass between cell piece, a pair of reflecting parts positioned at a pair of refraction parts it Between, refraction part is mapped to after the reflected portion's reflection of incident ray, then be mapped on crystalline silicon battery plate Jing after refraction part refraction, the light Weather-proof and aqueous vapor separation layer that volt backboard includes stacking gradually, the first adhesive linkage, UV-blocking layer, the second adhesive linkage, strengthen Layer, the 3rd adhesive linkage and reflection and tack coat.
2. according to the Crystalline Silicon PV Module described in claim 1, it is characterised in that:Described refraction part and crystalline silicon battery plate Edge flush.
3. according to the Crystalline Silicon PV Module described in claim 1 or 2, it is characterised in that:Described reflecting part and photovoltaic glass Bottom surface inclination angle is 65 °, and the refraction part is 90 ° with photovoltaic glass bottom surface inclination angle.
4. Crystalline Silicon PV Module according to claim 1, it is characterised in that described weather-proof and aqueous vapor separation layer is PVDF Layer, the thickness of the PVDF layers is 50~70 μm.
5. Crystalline Silicon PV Module according to claim 1, it is characterised in that the UV-blocking layer is white PET Layer, the thickness of the white pet layer is 30~60 μm.
6. Crystalline Silicon PV Module according to claim 1, it is characterised in that the enhancement layer is that PET biaxial tensiones are thin Film layer, the thickness of the PET biaxially oriented laminated films is 260~350 μm.
7. Crystalline Silicon PV Module according to claim 1, it is characterised in that the reflection and tack coat are white PE Layer, the thickness of the white PE layers is 40~80 μm.
8. Crystalline Silicon PV Module according to claim 1, it is characterised in that first adhesive linkage, described second are glued Connect layer or the 3rd adhesive linkage be the thickness of polyurethane or acrylic acid glue-line, the polyurethane or acrylic acid glue-line be 3~10 μ m。
CN201611094525.1A 2016-12-01 2016-12-01 Crystalline silicon photovoltaic module Pending CN106601848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611094525.1A CN106601848A (en) 2016-12-01 2016-12-01 Crystalline silicon photovoltaic module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611094525.1A CN106601848A (en) 2016-12-01 2016-12-01 Crystalline silicon photovoltaic module

Publications (1)

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CN106601848A true CN106601848A (en) 2017-04-26

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108461561A (en) * 2018-04-02 2018-08-28 格润智能光伏南通有限公司 A kind of photovoltaic module of high-photoelectric transformation efficiency
CN111900221A (en) * 2020-08-05 2020-11-06 苏州中来光伏新材股份有限公司 Light high-strength photovoltaic module and preparation method thereof
CN114759110A (en) * 2022-01-28 2022-07-15 浙江中聚材料有限公司 Novel solar photovoltaic module and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101431108A (en) * 2008-12-09 2009-05-13 上海海优威电子技术有限公司 Novel solar battery backboard
CN102420264A (en) * 2011-11-25 2012-04-18 宁波长阳科技有限公司 Solar cell back plate and preparation method thereof
CN103441175A (en) * 2013-08-13 2013-12-11 苏州盛康光伏科技有限公司 Crystalline silicon photovoltaic module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101431108A (en) * 2008-12-09 2009-05-13 上海海优威电子技术有限公司 Novel solar battery backboard
CN102420264A (en) * 2011-11-25 2012-04-18 宁波长阳科技有限公司 Solar cell back plate and preparation method thereof
CN103441175A (en) * 2013-08-13 2013-12-11 苏州盛康光伏科技有限公司 Crystalline silicon photovoltaic module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108461561A (en) * 2018-04-02 2018-08-28 格润智能光伏南通有限公司 A kind of photovoltaic module of high-photoelectric transformation efficiency
CN111900221A (en) * 2020-08-05 2020-11-06 苏州中来光伏新材股份有限公司 Light high-strength photovoltaic module and preparation method thereof
CN114759110A (en) * 2022-01-28 2022-07-15 浙江中聚材料有限公司 Novel solar photovoltaic module and preparation method thereof

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Application publication date: 20170426

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