CN106601848A - Crystalline silicon photovoltaic module - Google Patents
Crystalline silicon photovoltaic module Download PDFInfo
- Publication number
- CN106601848A CN106601848A CN201611094525.1A CN201611094525A CN106601848A CN 106601848 A CN106601848 A CN 106601848A CN 201611094525 A CN201611094525 A CN 201611094525A CN 106601848 A CN106601848 A CN 106601848A
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- Prior art keywords
- crystalline silicon
- layer
- photovoltaic
- refraction
- module
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 52
- 239000011521 glass Substances 0.000 claims abstract description 32
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 8
- 239000002313 adhesive film Substances 0.000 claims description 7
- 239000002033 PVDF binder Substances 0.000 claims description 6
- 229920002635 polyurethane Polymers 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 206010043268 Tension Diseases 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a crystalline silicon photovoltaic module, which comprises photovoltaic glass, a front-layer film, a plurality of crystalline silicon cells arranged in an array at intervals, a rear-layer film and a photovoltaic backplane, wherein the photovoltaic glass, the front-layer film, the crystalline silicon cells, the rear-layer film and the photovoltaic backplane are sequentially laminated and glued; the photovoltaic glass is high-transmission glass, a pair of reflection parts and a pair of refraction parts are arranged in the photovoltaic glass between two adjacent crystalline silicon cells, the pair of reflection parts is located between the pair of refraction parts, and incident light is reflected through the reflection parts, then irradiates the refraction parts, is then refracted through the refraction parts and then irradiates the crystalline silicon cells. The crystalline silicon photovoltaic module greatly improves the photon utilization rate and the crystalline silicon photovoltaic module output power, and the photoelectric conversion efficiency of the crystalline silicon photovoltaic module is high.
Description
Technical field
The present invention relates to field of photovoltaic technology, more particularly to a kind of Crystalline Silicon PV Module.
Background technology
Solar energy is inexhaustible, the nexhaustible regenerative resource of the mankind, will not produce any environmental pollution, too
In the effectively utilizes of positive energy, photovoltaic technology has stepped into daily life, wherein, wide variety of crystal silicon solar
Battery exactly absorbs luminous energy using Crystalline Silicon PV Module, opto-electronic conversion occurs so as to produce electric energy.The crystal for being used at present
Silicon photovoltaic module includes photovoltaic glass, front adhesive film, some crystalline silicon battery plates of spaced array arrangement, rear layer glued membrane and photovoltaic
Backboard, photovoltaic glass, front adhesive film, some crystalline silicon battery plates, rear layer glued membrane and photovoltaic back stack gradually gluing, light from
Photovoltaic glass is injected, and the light incided on cell piece is utilized, and the light incided in adjacent cell piece gap does not obtain profit
With this directly affects the utilization rate of photon, and the output of photovoltaic module is undesirable.
The content of the invention
Needed for of the invention, the technical problem of solution is：A kind of Crystalline Silicon PV Module for improving photon utilization rate is provided.
In order to solve the above problems, the technical solution used in the present invention is：Crystalline Silicon PV Module, which includes photovoltaic glass
Glass, front adhesive film, some crystalline silicon battery plates of spaced array arrangement, rear layer glued membrane and photovoltaic back, photovoltaic glass, front layer glue
Film, crystalline silicon battery plate, rear layer glued membrane and photovoltaic back stack gradually gluing, and the photovoltaic glass is high transmission glass, in place
A pair of reflecting parts and a pair of refraction parts, a pair of reflecting parts are provided with photovoltaic glass between adjacent two crystalline silicon battery plates
Between a pair of refraction parts, refraction part is mapped to after the reflected portion's reflection of incident ray, then is mapped to crystal Jing after refraction part refraction
On silicon cell, weather-proof and aqueous vapor separation layer that the photovoltaic back includes stacking gradually, the first adhesive linkage, ultraviolet isolating
Layer, the second adhesive linkage, enhancement layer, the 3rd adhesive linkage and reflection and tack coat.
Preferably, described refraction part is flushed with the edge of crystalline silicon battery plate.
Preferably, described reflecting part and photovoltaic glass bottom surface inclination angle are 65 °, the refraction part and photovoltaic glass bottom surface
Inclination angle is 90 °.
Preferably, described weather-proof and aqueous vapor separation layer is PVDF layers, the thickness of the PVDF layers is 50～70 μm.
Preferably, the UV-blocking layer is white pet layer, the thickness of the white pet layer is 30～60 μm.
Preferably, the enhancement layer is PET biaxially oriented laminated films, the thickness of the PET biaxially oriented laminated films is
260～350 μm.
Preferably, the reflection and tack coat are white PE layers, the thickness of the white PE layers is 40～80 μm.
Preferably, first adhesive linkage, second adhesive linkage or the 3rd adhesive linkage are polyurethane or propylene
The thickness of sour glue-line, the polyurethane or acrylic acid glue-line is 3～10 μm.
The invention has the beneficial effects as follows：Crystalline Silicon PV Module towards the sun work when, light is injected from photovoltaic glass, is entered
The light being mapped on crystalline silicon battery plate is utilized, and the light Jing diffuse-reflectance portion incided in adjacent crystal silicon cell gap occurs
Refraction part is mapped to after reflection, and is mapped on crystalline silicon battery plate after refraction part is reflected, so substantially increase the profit of photon
With rate and the output of Crystalline Silicon PV Module, the photoelectric transformation efficiency height of Crystalline Silicon PV Module.
Description of the drawings
Fig. 1 is the structural representation of Crystalline Silicon PV Module of the present invention.
Fig. 2 is the light line reflection between adjacent crystal silicon cell and refraction route schematic diagram.
Fig. 3 is the structural representation of the photovoltaic back of Crystalline Silicon PV Module of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings and preferred embodiment is described in further detail to technical solutions according to the invention.
As Figure 1-3, the Crystalline Silicon PV Module described in the present embodiment, including photovoltaic glass 1, front adhesive film 2, interval
Some crystalline silicon battery plates 3, rear layer glued membrane 4 and photovoltaic back 5 that array is arranged, photovoltaic glass 1, front adhesive film 2, crystalline silicon electricity
Pond piece 3, rear layer glued membrane 4 and photovoltaic back 5 stack gradually carry out under gluing, and the vacuum environment in laminating machine it is gluing solid
Change, fixed border 6 is installed in Crystalline Silicon PV Module surrounding then.The photovoltaic glass 1 is high transmission glass, positioned at adjacent
A pair of diffuse-reflectance portions 11 and a pair of refraction parts 12 are provided with photovoltaic glass between two crystalline silicon battery plates 3, a pair unrestrained anti-
Portion 11 is penetrated between a pair of refraction parts 12, incident ray is mapped to refraction part 12, then Jing refraction parts Jing after the reflection of diffuse-reflectance portion 11
It is mapped on crystalline silicon battery plate 3 after 12 refractions, weather-proof and aqueous vapor separation layer 51 that the photovoltaic back 5 includes stacking gradually, the
One adhesive linkage 52, UV-blocking layer 53, the second adhesive linkage 54, enhancement layer 55, the 3rd adhesive linkage 56 and reflection and tack coat
57。
In the present embodiment, described refraction part 12 is flushed with the edge of crystalline silicon battery plate 3, described diffuse-reflectance portion 11 with
The bottom surface inclination angle of photovoltaic glass 1 is 65 °, and the refraction part 12 is 90 ° with 1 bottom surface inclination angle of photovoltaic glass, described weather-proof and steam
Barrier layer 51 is PVDF layers, and the thickness of the PVDF layers is 50～70 μm, and the UV-blocking layer 53 is white pet layer, institute
The thickness for stating white pet layer is 30～60 μm, and the enhancement layer 55 is PET biaxially oriented laminated films, and the PET biaxial tensiones are thin
The thickness of film layer is 260～350 μm, and the reflection and tack coat 57 are white PE layers, the thickness of the white PE layers is 40～
80 μm, first adhesive linkage 52, second adhesive linkage 54 or the 3rd adhesive linkage 56 are polyurethane or acrylic acid glue-line,
The thickness of the polyurethane or acrylic acid glue-line is 3～10 μm.
Crystalline Silicon PV Module towards the sun work when, light is injected from photovoltaic glass 1, incides crystalline silicon battery plate 3
On light be utilized, incide after light in 3 gap of adjacent crystal silicon cell occurs reflection Jing diffuse-reflectance portion 11 and be mapped to folding
Portion 12 is penetrated, and is mapped on crystalline silicon battery plate 3 after refraction part 12 is reflected, made full use of and be injected into adjacent crystal silicon electricity
The light in 3 gap of pond piece, so substantially increases the output of the utilization rate and Crystalline Silicon PV Module of photon, crystalline silicon light
The photoelectric transformation efficiency of volt component is high.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
1. Crystalline Silicon PV Module, it is characterised in that：The Crystalline Silicon PV Module includes photovoltaic glass, front adhesive film, interval
Some crystalline silicon battery plates of array arrangement, rear layer glued membrane and photovoltaic back, photovoltaic glass, front adhesive film, crystalline silicon battery plate,
Layer glued membrane and photovoltaic back stack gradually gluing afterwards, and the photovoltaic glass is high transmission glass, positioned at adjacent two crystalline silicons
Be provided with a pair of reflecting parts and a pair of refraction parts in photovoltaic glass between cell piece, a pair of reflecting parts positioned at a pair of refraction parts it
Between, refraction part is mapped to after the reflected portion's reflection of incident ray, then be mapped on crystalline silicon battery plate Jing after refraction part refraction, the light
Weather-proof and aqueous vapor separation layer that volt backboard includes stacking gradually, the first adhesive linkage, UV-blocking layer, the second adhesive linkage, strengthen
Layer, the 3rd adhesive linkage and reflection and tack coat.
2. according to the Crystalline Silicon PV Module described in claim 1, it is characterised in that：Described refraction part and crystalline silicon battery plate
Edge flush.
3. according to the Crystalline Silicon PV Module described in claim 1 or 2, it is characterised in that：Described reflecting part and photovoltaic glass
Bottom surface inclination angle is 65 °, and the refraction part is 90 ° with photovoltaic glass bottom surface inclination angle.
4. Crystalline Silicon PV Module according to claim 1, it is characterised in that described weather-proof and aqueous vapor separation layer is PVDF
Layer, the thickness of the PVDF layers is 50～70 μm.
5. Crystalline Silicon PV Module according to claim 1, it is characterised in that the UV-blocking layer is white PET
Layer, the thickness of the white pet layer is 30～60 μm.
6. Crystalline Silicon PV Module according to claim 1, it is characterised in that the enhancement layer is that PET biaxial tensiones are thin
Film layer, the thickness of the PET biaxially oriented laminated films is 260～350 μm.
7. Crystalline Silicon PV Module according to claim 1, it is characterised in that the reflection and tack coat are white PE
Layer, the thickness of the white PE layers is 40～80 μm.
8. Crystalline Silicon PV Module according to claim 1, it is characterised in that first adhesive linkage, described second are glued
Connect layer or the 3rd adhesive linkage be the thickness of polyurethane or acrylic acid glue-line, the polyurethane or acrylic acid glue-line be 3～10 μ
m。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611094525.1A CN106601848A (en) | 2016-12-01 | 2016-12-01 | Crystalline silicon photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611094525.1A CN106601848A (en) | 2016-12-01 | 2016-12-01 | Crystalline silicon photovoltaic module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106601848A true CN106601848A (en) | 2017-04-26 |
Family
ID=58595795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611094525.1A Pending CN106601848A (en) | 2016-12-01 | 2016-12-01 | Crystalline silicon photovoltaic module |
Country Status (1)
| Country | Link |
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| CN (1) | CN106601848A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461561A (en) * | 2018-04-02 | 2018-08-28 | 格润智能光伏南通有限公司 | A kind of photovoltaic module of high-photoelectric transformation efficiency |
| CN111900221A (en) * | 2020-08-05 | 2020-11-06 | 苏州中来光伏新材股份有限公司 | Light high-strength photovoltaic module and preparation method thereof |
| CN114759110A (en) * | 2022-01-28 | 2022-07-15 | 浙江中聚材料有限公司 | Novel solar photovoltaic module and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431108A (en) * | 2008-12-09 | 2009-05-13 | 上海海优威电子技术有限公司 | Novel solar battery backboard |
| CN102420264A (en) * | 2011-11-25 | 2012-04-18 | 宁波长阳科技有限公司 | Solar cell back plate and preparation method thereof |
| CN103441175A (en) * | 2013-08-13 | 2013-12-11 | 苏州盛康光伏科技有限公司 | Crystalline silicon photovoltaic module |
-
2016
- 2016-12-01 CN CN201611094525.1A patent/CN106601848A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431108A (en) * | 2008-12-09 | 2009-05-13 | 上海海优威电子技术有限公司 | Novel solar battery backboard |
| CN102420264A (en) * | 2011-11-25 | 2012-04-18 | 宁波长阳科技有限公司 | Solar cell back plate and preparation method thereof |
| CN103441175A (en) * | 2013-08-13 | 2013-12-11 | 苏州盛康光伏科技有限公司 | Crystalline silicon photovoltaic module |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461561A (en) * | 2018-04-02 | 2018-08-28 | 格润智能光伏南通有限公司 | A kind of photovoltaic module of high-photoelectric transformation efficiency |
| CN111900221A (en) * | 2020-08-05 | 2020-11-06 | 苏州中来光伏新材股份有限公司 | Light high-strength photovoltaic module and preparation method thereof |
| CN114759110A (en) * | 2022-01-28 | 2022-07-15 | 浙江中聚材料有限公司 | Novel solar photovoltaic module and preparation method thereof |
| CN114759110B (en) * | 2022-01-28 | 2024-05-03 | 浙江中聚材料有限公司 | Novel solar photovoltaic module and preparation method thereof |
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Application publication date: 20170426 |
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