CN202150471U - Structure capable of improving photoelectric conversion efficiency for solar cell - Google Patents
Structure capable of improving photoelectric conversion efficiency for solar cell Download PDFInfo
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- CN202150471U CN202150471U CN201120251810U CN201120251810U CN202150471U CN 202150471 U CN202150471 U CN 202150471U CN 201120251810 U CN201120251810 U CN 201120251810U CN 201120251810 U CN201120251810 U CN 201120251810U CN 202150471 U CN202150471 U CN 202150471U
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000010248 power generation Methods 0.000 abstract description 7
- 239000012780 transparent material Substances 0.000 abstract description 4
- 229920002313 fluoropolymer Polymers 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 24
- 238000009434 installation Methods 0.000 description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 15
- 206010003084 Areflexia Diseases 0.000 description 12
- 239000010408 film Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 241001424688 Enceliopsis Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a structure capable of improving photoelectric conversion efficiency for a solar cell. The structure capable of improving photoelectric conversion efficiency for a solar cell comprises a solar assembly and a reflector surface arranged thereunder. The bottom of the solar assembly is designed to be a light-passing plate. Sunlight below the solar assembly is collected by the reflector surface and is reflected back to the power generation unit of the solar assembly for power generation. According to the utility model, the sunlight below the plane of the solar assembly is collected and is returned in a reflection manner to the assembly for continuous power generation, so that the photoelectric conversion efficiency of a solar cell assembly can be increased by 6 to 72%. Though the overall cost is increased since a mirror surface emission structure is additionally arranged, the generation cost of each kilowatt hour is greatly reduced because of substantial increase of the amount of power generation, besides a transparent material for a backboard in the structure replaces expensive fluoroplastic so that a part of cost can be saved.
Description
Technical field
The utility model relates to the solar photovoltaic conversion technical field, is meant a kind of structure that increases the solar cell photoelectric conversion efficiency especially.
Background technology
Solar power generation is power generation process one of the electric energy conversion regime of environmental protection the most up to now, and under the background of, global greenhouse effect exhausted day by day in fossil energy, solar power generation obtains the attention of national governments, develops fast but there are two factors restricting it; The one, the solar energy electricity price is too high, mainly be the cause of just dressing up Ben Taigao because of generating equipment, and the core of cost is battery chip; The 2nd, solar energy converting efficient is lower, the monocrystalline silicon battery conversion efficiency 18%～20% of volume production, polycrystal silicon cell 16%～18%; Amorphous silicon membrane battery 6%～9%, and these chips are after being packaged into assembly, its component efficiency approximately is 90% of a chip efficient; Photoelectric conversion efficiency has lowly not only been wasted the raw material of expensive chip; Also under the unit's of making energy output, the area that sunlight is accepted in requirement is bigger, and floor space is bigger.
Under the situation that solar components standard light photoelectric transformation efficiency is fixed; The unique channel that improves the energy output of assembly is to improve incident intensity; Technology in the past generally is before solar energy incident, sunlight to be carried out reentering after the pack being mapped to assembly, because the cause of optically focused, assembly temperature can raise a lot; Though general concentrating component all must have good cooling device, the high temperature of assembly surface will quicken the useful life of the aging and chip of encapsulating material.
The utility model content
The purpose of the utility model provides a kind of structure that increases the solar cell photoelectric conversion efficiency, and it is guaranteeing to improve the photoelectric conversion efficiency of solar energy under the solar components prerequisite in useful life, to improve solar energy utilization rate.
For realizing above-mentioned purpose, the solution of the utility model is:
A kind of structure that increases the solar cell photoelectric conversion efficiency, it comprises the mirror surface of solar components and below thereof, the bottom surface of this solar components is made as light-passing board; The generator unit that the sunlight reflected of mirror surface collection solar components below is returned solar components generates electricity.
Said solar components be thin film solar assembly, crystal silicon solar assembly etc. all can directly convert solar energy into the generator unit of electric energy.
The light-passing board of said solar components bottom surface is transparent plastic or ultra-clear glasses.
Said solar module is conventional solar cells chip or multilayer PN junction battery chip.
Said multilayer PN junction battery chip is for hull cell, and PN junction superposes or is distributed in the two sides of substrate in a side of substrate; Crystal silicon battery chip PN junction is simultaneously superposeed at base material, or make PN junction in the same way respectively on the base material two sides.
Said mirror surface is one or more the combination of concave mirror, convex lens, level crossing.
Said solar components or solar battery chip are arranged or are staggered.
After adopting the utility model; The utility model is specially through collecting the following sunlight in solar components plane, returns the method that assembly continues generating through reflection way, and so the photoelectric conversion efficiency of solar module can increase by 6～72%; Can increase whole cost though increase the minute surface emitting structural; But,, make the cost of electricity-generating of every degree electricity significantly reduce because of the significantly increase of energy output except the structure dorsulum replaces expensive fluoroplastics can practice thrift the departmental cost with transparent material.
Description of drawings
Figure 1A, 1B are pedion silicon solar cell chip sketch map in the utility model solar components;
Fig. 2 A, 2B are single-sided film solar battery chip sketch map in the utility model solar components;
Fig. 3 A, 3B are two-sided crystal silicon solar batteries chip sketch map in the utility model solar components;
Fig. 4 A, 4B are two-side film membrane solar battery chip sketch map in the utility model solar components;
Fig. 5 A, 5B are battery chip encapsulating structure sketch map in the utility model solar components;
Fig. 6 A, 6B, 6C, 6D are the utility model solar battery chip or arrangements of components sketch map;
Fig. 7 A, 7B, 7C are the work sketch map of the utility model.
Embodiment
Cooperate Fig. 1 to shown in Figure 7; The utility model has disclosed a kind of structure that increases the solar cell photoelectric conversion efficiency; It comprises the mirror surface Y of solar components X and below thereof, and the bottom surface of this solar components X is made as light-passing board X1, and solar battery chip is made as X2; The generator unit that the sunlight reflected of mirror surface Y collection solar components X below is returned solar components X generates electricity.
The battery chip of the utility model can be following four types:
Pedion silicon solar cell chip: the most frequently used a kind of crystal silicon solar batteries chip has one or more layers PN junction on the one side of crystal silicon sheet.Shown in Figure 1A, it is followed successively by electrode layer 10, antireflection layer 11, N type layer 12, P type layer 13, N type layer 14, P type monocrystalline/polycrystalline silicon substrate layer 15 and conductive electrode layer 16 from top to bottom; Shown in Figure 1B; It is followed successively by electrode layer 20, antireflection layer 21, P type layer 22, N type layer 23, P type layer 24, N type monocrystalline/polycrystalline silicon substrate layer 25 and conductive electrode layer 26 from top to bottom; Also can plate one deck amorphous silicon layer (I layer) on this n type single crystal silicon/polysilicon base material two surfaces earlier, make battery chip (like the HIT battery of SANYO) again.The monocrystalline silicon battery chip can adopt disk, makes full use of the HIGH-PURITY SILICON material.
Single-sided film solar battery chip: the most frequently used a kind of thin-film solar cells chip; The PN junction that on the one side of matrix, has one or more layers; Shown in Fig. 2 A, it is followed successively by electrode layer 30, antireflection layer 31, N type layer 32, P type layer 33 (NP layer can the stack of 0～7 layer multi-layer), N type layer 34, P type layer 35, transparent electrode layer 36 and transparent base 37 from top to bottom; Shown in Fig. 2 B, it is followed successively by electrode layer 40, antireflection layer 41, P type layer 42, N type layer 43 (PN layer can the stack of 0～7 layer multi-layer), P type layer 44, N type layer 45, transparent electrode layer 46 and transparent base 47 from top to bottom.
Two-sided crystal silicon solar batteries chip: the PN junction that all has one or more layers on the two sides of crystal silicon sheet; PN junction towards identical; Shown in Fig. 3 A; It is followed successively by electrode layer 50, antireflection layer 51, N type layer 52, P type layer 53 (NP layer can the stack of 0～7 layer multi-layer), N type layer 54, P type monocrystalline/polycrystalline silicon substrate layer 55, N type layer 56, P type layer 57, N type layer 58, P type layer 59 (NP layer can the stack of 0～7 layer multi-layer) and conductive electrode layer 50 from top to bottom; Shown in Fig. 3 B; It is followed successively by electrode layer 60, antireflection layer 61, P type layer 62, N type layer 63 (PN layer can the stack of 0～7 layer multi-layer), P type layer 64, N type monocrystalline/polycrystalline silicon substrate layer 65, P type layer 66, N type layer 67, P type layer 68, N type layer 69 (PN layer can the stack of 0～7 layer multi-layer) and conductive electrode layer 60 from top to bottom; Also can plate one deck amorphous silicon layer (I layer) on this n type single crystal silicon/polysilicon base material two surfaces earlier, make battery chip (like the HIT battery of SANYO) again.The monocrystalline silicon battery chip can adopt disk, makes full use of the HIGH-PURITY SILICON material.
Two-side film membrane solar battery chip: the PN junction that on two faces of matrix, all has one or more layers; PN junction towards on the contrary; Shown in Fig. 4 A, it is followed successively by electrode layer 70, antireflection layer 71, N type layer 72, P type layer 73 (NP layer can the stack of 0～7 layer multi-layer), N type layer 74, P type layer 75, transparent electrode layer 76, transparency carrier 711, P type layer 77, N type layer 78, P type layer 79, N type layer 710 (NP layer can the stack of 0～7 layer multi-layer), antireflection layer 71 and electrode layer 70 from top to bottom.Shown in Fig. 4 B, it is followed successively by electrode layer 80, antireflection layer 81, P type layer 82, N type layer 83 (PN layer can the stack of 0～7 layer multi-layer), P type layer 84, N type layer 85, transparent electrode layer 86, transparency carrier 811, N type layer 87, P type layer 88, N type layer 89, P type layer 810 (PN layer can the stack of 0～7 layer multi-layer), antireflection layer 81 and electrode layer 80 from top to bottom.
The utility model patent is used pedion silicon solar cell chip, and its photoelectric conversion efficiency can increase by 6%～12% than the situation of common no optically focused
The utility model patent is used the single-sided film solar battery chip, and its photoelectric conversion efficiency can increase by 10%～22% than the situation of common no optically focused
The utility model patent is used two-sided crystal silicon solar batteries chip, and its photoelectric conversion efficiency can increase by 30%～58% than the situation of common no optically focused
The utility model patent two-side film membrane solar battery chip, its photoelectric conversion efficiency can increase by 30%～72% than the situation of common no optically focused
The battery chip encapsulating structure
The main feature of the cell package of the utility model is that back veneer material adopts transparent material, and like ultra-clear glasses, transparent plastic etc., structure is shown in Fig. 5 A, 5B.Wherein, A type encapsulating structure comprises ultra-clear glasses A1, EVA A2, and A4, battery chip A3, dianegative A5, silica gel A6 and aluminium frame A7 are mainly used in the encapsulation of crystal silicon battery chip and two-side film membrane battery chip; The Type B encapsulating structure comprises transparency carrier B1, battery chip B2, EVA B3, dianegative B4, silica gel B5 and aluminium frame B6, is mainly used in the encapsulation of single-sided film battery.This encapsulating structure does not use expensive fluoroplastics backboard, generation with relatively cheap many transparent materials.
The battery chip of the utility model or the array of assembly can be a kind of in the arrangement mode shown in Figure 6, like arranged or be staggered.
The plate of the utility model down reflection matching battery chip or assembly array can be a kind of during minute surface shown in Fig. 7 is provided with.
The sunlight of solar components below is meant the sunray below the solar components plane, and it can be that sunray penetrates sunlight residual behind the solar cell, the sunlight that penetrates that penetrates sunlight, solar components gap in solar cell gap.
Embodiment 1
Module information: like the packaged structure of Fig. 5 A, show and adopt 60 of single face monocrystalline silicon 156 chips that base plate is the clear PET material; Under the standard test condition, Pm=212W, Vm=28.2V; Im=7.52A, Voc=36.3, Isc=8.10A; Size of components: 1650 * 992mm, assembly efficiency eta m=12.95%
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 A type reflecting plate
Test condition: instant irradiance 920W/m2,29 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=193W, Vm=28V, Im=6.89A, assembly actual converted efficiency eta m=12.82%
Under the installation diagram 7A type reflecting plate situation, Pm=208W, Vm=28.1V, Im=7.40A, assembly actual converted efficiency eta m=13.81%
Assembly actual converted efficient increases by 7.72% behind the installation diagram 7A type reflecting plate
Embodiment 2
Module information: encapsulating structure shown in Fig. 5 A, adopt 60 of single face monocrystalline silicon 156 chips, base plate is the clear PET material; Under the standard test condition, Pm=212W, Vm=28.2V; Im=7.52A, Voc=36.3, Isc=8.10A; Size of components: 1650 * 992mm, assembly efficiency eta m=12.95%
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 Type B reflecting plate
Test condition: instant irradiance 920W/m2,29 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=193W, Vm=28V, Im=6.89A, assembly actual converted efficiency eta m=12.82%
Under the installation diagram 7B type reflecting plate situation, Pm=210W, Vm=28.2V, Im=7.45A, assembly actual converted efficiency eta m=13.95%
Assembly actual converted efficient increases by 8.81% behind the installation diagram 7B type reflecting plate
Embodiment 3
Module information: encapsulating structure shown in Fig. 5 A, adopt 60 of single face monocrystalline silicon 156 chips, base plate is the clear PET material; Under the standard test condition, Pm=212W, Vm=28.2V; Im=7.52A, Voc=36.3, Isc=8.10A; Size of components: 1650 * 992mm, assembly efficiency eta m=12.95%
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 C type reflecting plate
Test condition: instant irradiance 920W/m2,29 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=193W, Vm=28V, Im=6.89A, assembly actual converted efficiency eta m=12.82%
Under the installation diagram 7C type reflecting plate situation, Pm=215W, Vm=28.4V, Im=7.57A, assembly actual converted efficiency eta m=14.28%
Assembly actual converted efficient increases by 11.39% behind the installation diagram 7C type reflecting plate
Embodiment 4
Module information: encapsulating structure shown in Fig. 5 B, adopt single face CIGS hull cell, base plate is the clear PET material; Under the standard test condition, Pm=70.6W, Vm=55.4V; Im=1.27A, Voc=74.3, Isc=1.51A; Size of components: 640 * 1250mm, assembly effective area 6440cm2, the effective efficiency eta m=10.96% of assembly (calculating) with the assembly effective area.
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 A type reflecting plate
Test condition: instant irradiance 990W/m2,31 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=69.3W, Vm=55.4V, Im=1.25A, the actual effectively efficiency eta m=10.87% of assembly
Under the installation diagram 7A type reflecting plate situation, Pm=77.4W, Vm=55.7V, Im=1.39A, assembly actual converted efficiency eta m=12.14%
Assembly actual converted efficient increases by 11.68% behind the installation diagram 7A type reflecting plate
Embodiment 5
Module information: encapsulating structure shown in Fig. 5 B, adopt single face CIGS hull cell, base plate is the clear PET material; Under the standard test condition, Pm=70.6W, Vm=55.4V; Im=1.27A, Voc=74.3, Isc=1.51A; Size of components: 640 * 1250mm, assembly effective area 6440cm2, the effective efficiency eta m=10.96% of assembly (calculating) with the assembly effective area.
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 Type B reflecting plate
Test condition: instant irradiance 990W/m2,31 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=69.3W, Vm=55.4V, Im=1.25A, the actual effectively efficiency eta m=10.87% of assembly
Under the installation diagram 7B type reflecting plate situation, Pm=80.5W, Vm=55.9V, Im=1.44A, assembly actual converted efficiency eta m=12.63%
Assembly actual converted efficient increases by 16.19% behind the installation diagram 7B type reflecting plate
Embodiment 6
Module information: encapsulating structure shown in Fig. 5 B, adopt single face CIGS hull cell, base plate is the clear PET material; Under the standard test condition, Pm=70.6W, Vm=55.4V; Im=1.27A, Voc=74.3, Isc=1.51A; Size of components: 640 * 1250mm, assembly effective area 6440cm2, the effective efficiency eta m=10.96% of assembly (calculating) with the assembly effective area.
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 C type reflecting plate
Test condition: instant irradiance 990W/m2,31 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=69.3W, Vm=55.4V, Im=1.25A, the actual effectively efficiency eta m=10.87% of assembly
Under the installation diagram 7C type reflecting plate situation, Pm=83.9W, Vm=56.3V, Im=1.49A, assembly actual converted efficiency eta m=13.16%
Assembly actual converted efficient increases by 21.07% behind the installation diagram 7C type reflecting plate
Embodiment 7
Module information: encapsulating structure shown in Fig. 5 A, adopt 60 of two-sided monocrystalline silicon 156 chips, base plate is the clear PET material; Under the standard test condition, Pm=244W, Vm=30.5V; Im=8A, Voc=37.3, Isc=8.5A; Size of components: 1650 * 992mm, assembly efficiency eta m=14.91%
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 A type reflecting plate
Test condition: instant irradiance 960W/m2,30 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=233W, Vm=30V, Im=7.77A, assembly actual converted efficiency eta m=14.83%
Under the installation diagram 7A type reflecting plate situation, Pm=327W, Vm=32.9V, Im=9.94A, assembly actual converted efficiency eta m=20.81%
Assembly actual converted efficient increases by 40.32% behind the installation diagram 7A type reflecting plate
Embodiment 8
Module information: encapsulating structure shown in Fig. 5 A, adopt 60 of two-sided monocrystalline silicon 156 chips, base plate is the clear PET material; Under the standard test condition, Pm=244W, Vm=30.5V; Im=8A, Voc=37.3, Isc=8.5A; Size of components: 1650 * 992mm, assembly efficiency eta m=14.91%
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt accompanying drawing 7B type reflecting plate
Test condition: instant irradiance 960W/m2,30 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=233W, Vm=30V, Im=7.77A, assembly actual converted efficiency eta m=14.83%
Under the installation diagram 7B type reflecting plate situation, Pm=339W, Vm=33.4V, Im=10.15A, assembly actual converted efficiency eta m=21.57%
Assembly actual converted efficient increases by 45.45% behind the installation diagram 7B type reflecting plate
Embodiment 9
Module information: encapsulating structure shown in Fig. 5 A, adopt 60 of two-sided monocrystalline silicon 156 chips, base plate is the clear PET material; Under the standard test condition, Pm=244W, Vm=30.5V; Im=8A, Voc=37.3, Isc=8.5A; Size of components: 1650 * 992mm, assembly efficiency eta m=14.91%
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 C type reflecting plate
Test condition: instant irradiance 960W/m2,30 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=233W, Vm=30V, Im=7.77A, assembly actual converted efficiency eta m=14.83%
Under the installation diagram 7C type reflecting plate situation, Pm=366W, Vm=34.2V, Im=10.7A, assembly actual converted efficiency eta m=23.29%
Assembly actual converted efficient increases by 57.05% behind the installation diagram 7C type reflecting plate
Module information: encapsulating structure shown in Fig. 5 A, adopt two-sided CIGS hull cell, base plate is the clear PET material; Under the standard test condition, Pm=77.8W, Vm=55.2V; Im=1.41A, Voc=73.9, Isc=1.69A; Size of components: 640 * 1250mm, assembly effective area 6440cm2 (single face), the effective efficiency eta m=12.08% of assembly (calculating) with the assembly effective area.
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 A type reflecting plate
Test condition: instant irradiance 970W/m2,31 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=74.8W, Vm=55.0V, Im=1.36A, the actual effectively efficiency eta m=11.97% of assembly
Under the installation diagram 7A type reflecting plate situation, Pm=109.5W, Vm=55.6V, Im=1.97A, assembly actual converted efficiency eta m=17.53%
Assembly actual converted efficient increases by 46.45% behind the installation diagram 7A type reflecting plate
Module information: encapsulating structure shown in Fig. 5 A, adopt two-sided CIGS hull cell, base plate is the clear PET material; Under the standard test condition, Pm=77.8W, Vm=55.2V; Im=1.41A, Voc=73.9, Isc=1.69A; Size of components: 640 * 1250mm, assembly effective area 6440cm2 (single face), the effective efficiency eta m=12.08% of assembly (calculating) with the assembly effective area.
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 Type B reflecting plate
Test condition: instant irradiance 970W/m2,31 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=74.8W, Vm=55.0V, Im=1.36A, the actual effectively efficiency eta m=11.97% of assembly
Under the installation diagram 7B type reflecting plate situation, Pm=113.6W, Vm=55.7V, Im=2.04A, assembly actual converted efficiency eta m=18.19%
Assembly actual converted efficient increases by 51.96% behind the installation diagram 7B type reflecting plate
Module information: encapsulating structure shown in Fig. 5 A, adopt two-sided CIGS hull cell, base plate is the clear PET material; Under the standard test condition, Pm=77.8W, Vm=55.2V; Im=1.41A, Voc=73.9, Isc=1.69A; Size of components: 640 * 1250mm, assembly effective area 6440cm2 (single face), the effective efficiency eta m=12.08% of assembly (calculating) with the assembly effective area.
Assembly is installed: face Due South to, inclination angle 23 degree
Assembly reflecting plate: adopt Fig. 7 Type B reflecting plate
Test condition: instant irradiance 970W/m2,31 ℃ of temperature
Test result:
Under the areflexia plate situation, Pm=74.8W, Vm=55.0V, Im=1.36A, the actual effectively efficiency eta m=11.97% of assembly
Under the installation diagram 7B type reflecting plate situation, Pm=122.4W, Vm=55.9V, Im=2.19A, assembly actual converted efficiency eta m=19.59%
Assembly actual converted efficient increases by 63.66% behind the installation diagram 7B type reflecting plate.
Claims (7)
1. structure that increases the solar cell photoelectric conversion efficiency, it is characterized in that: comprise the mirror surface of solar components and below thereof, the bottom surface of this solar components is made as light-passing board; The generator unit that the sunlight reflected of mirror surface collection solar components below is returned solar components generates electricity.
2. a kind of structure that increases the solar cell photoelectric conversion efficiency as claimed in claim 1 is characterized in that: solar components be thin film solar assembly, crystal silicon solar assembly etc. all can directly convert solar energy into the generator unit of electric energy.
3. according to claim 1 or claim 2 a kind of structure that increases the solar cell photoelectric conversion efficiency, it is characterized in that: the light-passing board of solar components bottom surface is transparent plastic or ultra-clear glasses.
4. according to claim 1 or claim 2 a kind of structure that increases the solar cell photoelectric conversion efficiency, it is characterized in that: solar module is conventional solar cells chip or multilayer PN junction battery chip.
5. a kind of structure that increases the solar cell photoelectric conversion efficiency as claimed in claim 4 is characterized in that: multilayer PN junction battery chip is for hull cell, and PN junction superposes or is distributed in the two sides of substrate in a side of substrate; Crystal silicon battery chip PN junction is simultaneously superposeed at base material, or make PN junction in the same way respectively on the base material two sides.
6. a kind of structure that increases the solar cell photoelectric conversion efficiency as claimed in claim 1 is characterized in that: mirror surface is one or more the combination of concave mirror, convex lens, level crossing.
7. according to claim 1 or claim 2 a kind of structure that increases the solar cell photoelectric conversion efficiency, it is characterized in that: solar components or solar battery chip are arranged or are staggered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120251810U CN202150471U (en) | 2011-07-18 | 2011-07-18 | Structure capable of improving photoelectric conversion efficiency for solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120251810U CN202150471U (en) | 2011-07-18 | 2011-07-18 | Structure capable of improving photoelectric conversion efficiency for solar cell |
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| CN202150471U true CN202150471U (en) | 2012-02-22 |
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| CN201120251810U Expired - Fee Related CN202150471U (en) | 2011-07-18 | 2011-07-18 | Structure capable of improving photoelectric conversion efficiency for solar cell |
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| CN (1) | CN202150471U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013010313A1 (en) * | 2011-07-18 | 2013-01-24 | 矽明科技股份有限公司 | Structure for increasing photoelectric conversion efficiency of solar cell |
| CN104300897A (en) * | 2014-08-18 | 2015-01-21 | 杭州慈源科技有限公司 | Multi-block double-sided power generation solar battery assembly |
| CN106656015A (en) * | 2016-11-11 | 2017-05-10 | 杭州品联科技有限公司 | Double-sided photovoltaic power generation apparatus |
| WO2018086078A1 (en) * | 2016-11-11 | 2018-05-17 | 杭州品联科技有限公司 | Double-sided photovoltaic device |
| WO2018086073A1 (en) * | 2016-11-11 | 2018-05-17 | 杭州品联科技有限公司 | Double-sided photovoltaic device |
| WO2018086079A1 (en) * | 2016-11-11 | 2018-05-17 | 杭州品联科技有限公司 | Double-sided photovoltaic device |
-
2011
- 2011-07-18 CN CN201120251810U patent/CN202150471U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013010313A1 (en) * | 2011-07-18 | 2013-01-24 | 矽明科技股份有限公司 | Structure for increasing photoelectric conversion efficiency of solar cell |
| CN104300897A (en) * | 2014-08-18 | 2015-01-21 | 杭州慈源科技有限公司 | Multi-block double-sided power generation solar battery assembly |
| CN106656015A (en) * | 2016-11-11 | 2017-05-10 | 杭州品联科技有限公司 | Double-sided photovoltaic power generation apparatus |
| WO2018086078A1 (en) * | 2016-11-11 | 2018-05-17 | 杭州品联科技有限公司 | Double-sided photovoltaic device |
| WO2018086073A1 (en) * | 2016-11-11 | 2018-05-17 | 杭州品联科技有限公司 | Double-sided photovoltaic device |
| WO2018086079A1 (en) * | 2016-11-11 | 2018-05-17 | 杭州品联科技有限公司 | Double-sided photovoltaic device |
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