CN202324417U - Crystalline silicon building integrated photovoltaic assembly - Google Patents

Crystalline silicon building integrated photovoltaic assembly Download PDF

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Publication number
CN202324417U
CN202324417U CN2011204255406U CN201120425540U CN202324417U CN 202324417 U CN202324417 U CN 202324417U CN 2011204255406 U CN2011204255406 U CN 2011204255406U CN 201120425540 U CN201120425540 U CN 201120425540U CN 202324417 U CN202324417 U CN 202324417U
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China
Prior art keywords
tempered glass
crystalline silicon
glass layer
integrated photovoltaic
reflection
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Expired - Fee Related
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CN2011204255406U
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Chinese (zh)
Inventor
宋大卫
苏振馨
郞平
苏金凤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Zhenhua Xiangping Glass Co., Ltd.
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TIANJIN TIANHUAN PHOTOVOLTAIC SOLAR POWER CO Ltd
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Priority to CN2011204255406U priority Critical patent/CN202324417U/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A30/00—Adapting or protecting infrastructure or their operation
    • Y02A30/60—Planning or developing urban green infrastructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Joining Of Glass To Other Materials (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本实用新型属于太阳能光伏技术领域，公开了一种晶体硅光伏建筑一体化组件，包括减反射超白钢化玻璃层及钢化玻璃层，在所述减反射超白钢化玻璃层及钢化玻璃层之间是两层密封胶膜，在所述两层密封胶膜之间夹有晶体硅电池片阵列。本实用新型与现有晶体硅光伏建筑一体化组件相比，类似于干法夹胶玻璃，具有更高的强度，可满足建筑玻璃幕墙的要求；另外，组件表面具有减反射和自清洁的效果，可以减少对组件的清洗维护。

Figure 201120425540

The utility model belongs to the technical field of solar photovoltaics, and discloses a crystalline silicon photovoltaic building integrated component, comprising an anti-reflection ultra-white tempered glass layer and a tempered glass layer, between the anti-reflection ultra-white tempered glass layer and the tempered glass layer It is two layers of sealant films, and a crystalline silicon cell array is sandwiched between the two layers of sealant films. Compared with the existing crystalline silicon photovoltaic building integrated components, the utility model is similar to dry-process laminated glass, has higher strength, and can meet the requirements of building glass curtain walls; in addition, the component surface has anti-reflection and self-cleaning effects , can reduce the cleaning and maintenance of components.

Figure 201120425540

Description

A kind of crystalline silicon photovoltaic architecture-integral assembly
Technical field
The utility model belongs to the solar-photovoltaic technology field, relates to a kind of crystalline silicon photovoltaic architecture-integral assembly.
Background technology
In numerous energy, solar energy power generating is tool technology content and the mode of development prospect in the new and renewable sources of energy.And the device that under solar radiation, luminous energy is converted into electric energy that common solar module is made up of photovoltaic glass, crystal silicon cell chip arrays, glued membrane, backboard, aluminium frame, junction box etc.
Begin BIPV (BIPV) technology that photovoltaic generating system and building organically blend to one to be applied recent years; Compare with traditional solar components mode of occupation; BIPV has numerous advantages: for example BIPV makes the part of building materials become the ingredient of wanting appearance ability assembly, has saved the cost of solar components; Can also effectively utilize sunlit space, save land resources; Institute's electricity at first uses for this building, can use in generating original place, original place, can save the investment of power station pushing electric network and reduce transmission losses.
But the performance to solar components in BIPV has higher requirement, and especially impact strength will reach the requirement of curtain wall.The BIPV assembly is divided into two types of crystal silicon assembly and film assemblies.
The overall structure of at present traditional crystalline silicon photovoltaic architecture-integral assembly is following: the ultra-white photovoltaic tempered glass of the top one deck, and the centre is the crystal silicon cell chip arrays, the bottom is a tempered glass, with the EVA bonding, is laminated into an integral body between each layer.The crystalline silicon photovoltaic architecture-integral assembly of this structure is comparatively thin, though can be through the detection of IEC61215, impact strength and mechanical strength are difficult to reach the requirement of building glass curtain wall, and the surface needs often to clean to guarantee light transmittance and generated output.
The utility model content
The purpose of the utility model is to provide a kind of high-intensity crystalline silicon photovoltaic architecture-integral assembly, and this assembly surface has antireflective and self-cleaning effect, can reduce the clean and maintenance to assembly.
The technical scheme that the utility model adopts is following:
A kind of crystalline silicon photovoltaic architecture-integral assembly; Comprise antireflective ultrawhite tempered glass layer and tempered glass layer; Between said antireflective ultrawhite tempered glass layer and tempered glass layer is two-layer sealed Cellophane, between said two-layer sealed Cellophane, accompanies the crystal silicon cell chip arrays.
Said antireflective ultrawhite tempered glass layer is that thickness is ultrawhite float glass process tempered glass or the ultrawhite calendering tempered glass that 4-8mm, surface are coated with antireflective coating.
The thickness of said tempered glass layer is 4-8mm.
Said sealed Cellophane is PVB.
Said crystal silicon cell chip arrays is monocrystalline silicon battery chip arrays or polycrystal silicon cell chip arrays.
The utility model is compared with existing crystalline silicon photovoltaic architecture-integral assembly, is similar to the dry method doubling glass, has higher intensity, can satisfy the requirement of building glass curtain wall; In addition, assembly surface has antireflective and self-cleaning effect, can reduce the clean and maintenance to assembly.
Description of drawings
Fig. 1 is the structural representation of the crystalline silicon photovoltaic architecture-integral assembly that provides of the utility model embodiment.
The specific embodiment
For the purpose, technical scheme and the advantage that make the utility model is clearer,, the utility model is further elaborated below in conjunction with accompanying drawing.
Referring to Fig. 1; A kind of crystalline silicon photovoltaic architecture-integral assembly; Comprise the antireflective ultrawhite float glass process tempered glass layer 1 that is positioned at top layer, the tempered glass layer 4 that is positioned at bottom; Between said antireflective ultrawhite tempered glass layer 1 and tempered glass layer 4 is two-layer sealed Cellophane 2, between said two-layer sealed Cellophane 2, accompanies crystal silicon cell chip arrays 3; Become as a whole behind the aforementioned each several part lamination.
Wherein, said antireflective ultrawhite tempered glass layer is that thickness is ultrawhite float glass process tempered glass or the ultrawhite calendering tempered glass that 4-8mm, surface are coated with antireflective coating.
The thickness of said tempered glass layer is 4-8mm.
Said sealed Cellophane is PVB.
Said crystal silicon cell chip arrays is monocrystalline silicon battery chip arrays or polycrystal silicon cell chip arrays.
The above only is the preferred implementation of the utility model; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection domain of the utility model.

Claims (5)

1.一种晶体硅光伏建筑一体化组件，其特征在于，包括减反射超白钢化玻璃层及钢化玻璃层，在所述减反射超白钢化玻璃层及钢化玻璃层之间是两层密封胶膜，在所述两层密封胶膜之间夹有晶体硅电池片阵列。 1. A crystalline silicon building-integrated photovoltaic component, characterized in that it comprises an anti-reflection ultra-clear tempered glass layer and a tempered glass layer, and there are two layers of sealant between the anti-reflection ultra-clear tempered glass layer and the tempered glass layer film, and a crystalline silicon cell array is sandwiched between the two layers of sealant films. 2.根据权利要求1所述的晶体硅光伏建筑一体化组件，其特征在于，所述减反射超白钢化玻璃层是厚度为4-8mm、表面镀有减反射膜的超白浮法钢化玻璃或超白压延钢化玻璃。 2. The crystalline silicon building-integrated photovoltaic module according to claim 1, wherein the anti-reflection ultra-clear tempered glass layer is ultra-clear float tempered glass with a thickness of 4-8 mm and an anti-reflection film coated on the surface Or ultra-clear rolled tempered glass. 3.根据权利要求1或２所述的晶体硅光伏建筑一体化组件，其特征在于，所述钢化玻璃层的厚度为4-8mm。 3. The crystalline silicon building integrated photovoltaic module according to claim 1 or 2, characterized in that the thickness of the tempered glass layer is 4-8mm. 4.根据权利要求1所述的晶体硅光伏建筑一体化组件，其特征在于，所述密封胶膜为PVB。 4. The crystalline silicon building-integrated photovoltaic module according to claim 1, wherein the sealant film is PVB. 5. 根据权利要求1或２所述的晶体硅光伏建筑一体化组件，其特征在于，所述晶体硅电池片阵列为单晶硅电池片阵列或多晶硅电池片阵列。 5. The crystalline silicon building-integrated photovoltaic module according to claim 1 or 2, wherein the crystalline silicon cell array is a monocrystalline silicon cell array or a polycrystalline silicon cell array.
CN2011204255406U 2011-11-01 2011-11-01 Crystalline silicon building integrated photovoltaic assembly Expired - Fee Related CN202324417U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969396A (en) * 2012-11-13 2013-03-13 武汉艾丽思新能源有限公司 Method for preparing glass for photovoltaic glass curtain wall

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969396A (en) * 2012-11-13 2013-03-13 武汉艾丽思新能源有限公司 Method for preparing glass for photovoltaic glass curtain wall
CN102969396B (en) * 2012-11-13 2015-03-04 武汉艾丽思新能源有限公司 Method for preparing glass for photovoltaic glass curtain wall

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Owner name: TIANJIN ZHENHUA XIANGPING GLASS CO., LTD.

Free format text: FORMER OWNER: TIANJIN TIANJIN PHOTOVOLTAIC SOLAR ENERGY CO.LTD.

Effective date: 20130201

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Address after: 300277 Dagang Binhai New Area of Tianjin city in Tang Zhen Xue Weitai Village Community Service Center (Tianjin Town Industrial Zone)

Patentee after: Tianjin Zhenhua Xiangping Glass Co., Ltd.

Address before: 300353 Tianjin City Station Town Jinnan District Huang industrial park

Patentee before: Tianjin Tianhuan Photovoltaic Solar Power Co., Ltd.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120711

Termination date: 20131101