CN202324417U - Crystalline silicon building integrated photovoltaic assembly - Google Patents

Crystalline silicon building integrated photovoltaic assembly Download PDF

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Publication number
CN202324417U
CN202324417U CN2011204255406U CN201120425540U CN202324417U CN 202324417 U CN202324417 U CN 202324417U CN 2011204255406 U CN2011204255406 U CN 2011204255406U CN 201120425540 U CN201120425540 U CN 201120425540U CN 202324417 U CN202324417 U CN 202324417U
Authority
CN
China
Prior art keywords
crystalline silicon
tempered glass
glass layer
photovoltaic assembly
integrated photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011204255406U
Other languages
Chinese (zh)
Inventor
宋大卫
苏振馨
郞平
苏金凤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Zhenhua Xiangping Glass Co., Ltd.
Original Assignee
TIANJIN TIANHUAN PHOTOVOLTAIC SOLAR POWER CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TIANJIN TIANHUAN PHOTOVOLTAIC SOLAR POWER CO Ltd filed Critical TIANJIN TIANHUAN PHOTOVOLTAIC SOLAR POWER CO Ltd
Priority to CN2011204255406U priority Critical patent/CN202324417U/en
Application granted granted Critical
Publication of CN202324417U publication Critical patent/CN202324417U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A30/00Adapting or protecting infrastructure or their operation
    • Y02A30/60Planning or developing urban green infrastructure
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]

Abstract

The utility model discloses a crystalline silicon building integrated photovoltaic assembly belonging to the technical field of photovoltaics and comprising an antireflection super white toughened glass layer and a toughened glass layer, wherein two layers of sealing glue films are arranged between the antireflection super white toughened glass layer and the toughened glass layer, and a crystalline silicon cell array is clamped between the two layers of sealing glue films. Compared with the conventional crystalline silicon building integrated photovoltaic assembly, the crystalline silicon building integrated photovoltaic assembly is similar to dry-method laminated glass, has higher strength, and can meet the requirement of a building glass curtain wall. In addition, the surface of the crystalline silicon building integrated photovoltaic assembly has effects of reducing reflection and self cleaning, thus cleaning and maintaining procedures to the crystalline silicon building integrated photovoltaic assembly can be reduced.

Description

A kind of crystalline silicon photovoltaic architecture-integral assembly
Technical field
The utility model belongs to the solar-photovoltaic technology field, relates to a kind of crystalline silicon photovoltaic architecture-integral assembly.
Background technology
In numerous energy, solar energy power generating is tool technology content and the mode of development prospect in the new and renewable sources of energy.And the device that under solar radiation, luminous energy is converted into electric energy that common solar module is made up of photovoltaic glass, crystal silicon cell chip arrays, glued membrane, backboard, aluminium frame, junction box etc.
Begin BIPV (BIPV) technology that photovoltaic generating system and building organically blend to one to be applied recent years; Compare with traditional solar components mode of occupation; BIPV has numerous advantages: for example BIPV makes the part of building materials become the ingredient of wanting appearance ability assembly, has saved the cost of solar components; Can also effectively utilize sunlit space, save land resources; Institute's electricity at first uses for this building, can use in generating original place, original place, can save the investment of power station pushing electric network and reduce transmission losses.
But the performance to solar components in BIPV has higher requirement, and especially impact strength will reach the requirement of curtain wall.The BIPV assembly is divided into two types of crystal silicon assembly and film assemblies.
The overall structure of at present traditional crystalline silicon photovoltaic architecture-integral assembly is following: the ultra-white photovoltaic tempered glass of the top one deck, and the centre is the crystal silicon cell chip arrays, the bottom is a tempered glass, with the EVA bonding, is laminated into an integral body between each layer.The crystalline silicon photovoltaic architecture-integral assembly of this structure is comparatively thin, though can be through the detection of IEC61215, impact strength and mechanical strength are difficult to reach the requirement of building glass curtain wall, and the surface needs often to clean to guarantee light transmittance and generated output.
The utility model content
The purpose of the utility model is to provide a kind of high-intensity crystalline silicon photovoltaic architecture-integral assembly, and this assembly surface has antireflective and self-cleaning effect, can reduce the clean and maintenance to assembly.
The technical scheme that the utility model adopts is following:
A kind of crystalline silicon photovoltaic architecture-integral assembly; Comprise antireflective ultrawhite tempered glass layer and tempered glass layer; Between said antireflective ultrawhite tempered glass layer and tempered glass layer is two-layer sealed Cellophane, between said two-layer sealed Cellophane, accompanies the crystal silicon cell chip arrays.
Said antireflective ultrawhite tempered glass layer is that thickness is ultrawhite float glass process tempered glass or the ultrawhite calendering tempered glass that 4-8mm, surface are coated with antireflective coating.
The thickness of said tempered glass layer is 4-8mm.
Said sealed Cellophane is PVB.
Said crystal silicon cell chip arrays is monocrystalline silicon battery chip arrays or polycrystal silicon cell chip arrays.
The utility model is compared with existing crystalline silicon photovoltaic architecture-integral assembly, is similar to the dry method doubling glass, has higher intensity, can satisfy the requirement of building glass curtain wall; In addition, assembly surface has antireflective and self-cleaning effect, can reduce the clean and maintenance to assembly.
Description of drawings
Fig. 1 is the structural representation of the crystalline silicon photovoltaic architecture-integral assembly that provides of the utility model embodiment.
The specific embodiment
For the purpose, technical scheme and the advantage that make the utility model is clearer,, the utility model is further elaborated below in conjunction with accompanying drawing.
Referring to Fig. 1; A kind of crystalline silicon photovoltaic architecture-integral assembly; Comprise the antireflective ultrawhite float glass process tempered glass layer 1 that is positioned at top layer, the tempered glass layer 4 that is positioned at bottom; Between said antireflective ultrawhite tempered glass layer 1 and tempered glass layer 4 is two-layer sealed Cellophane 2, between said two-layer sealed Cellophane 2, accompanies crystal silicon cell chip arrays 3; Become as a whole behind the aforementioned each several part lamination.
Wherein, said antireflective ultrawhite tempered glass layer is that thickness is ultrawhite float glass process tempered glass or the ultrawhite calendering tempered glass that 4-8mm, surface are coated with antireflective coating.
The thickness of said tempered glass layer is 4-8mm.
Said sealed Cellophane is PVB.
Said crystal silicon cell chip arrays is monocrystalline silicon battery chip arrays or polycrystal silicon cell chip arrays.
The above only is the preferred implementation of the utility model; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection domain of the utility model.

Claims (5)

1. crystalline silicon photovoltaic architecture-integral assembly; It is characterized in that; Comprise antireflective ultrawhite tempered glass layer and tempered glass layer; Between said antireflective ultrawhite tempered glass layer and tempered glass layer is two-layer sealed Cellophane, between said two-layer sealed Cellophane, accompanies the crystal silicon cell chip arrays.
2. crystalline silicon photovoltaic architecture-integral assembly according to claim 1 is characterized in that, said antireflective ultrawhite tempered glass layer is that thickness is ultrawhite float glass process tempered glass or the ultrawhite calendering tempered glass that 4-8mm, surface are coated with antireflective coating.
3. crystalline silicon photovoltaic architecture-integral assembly according to claim 1 and 2 is characterized in that the thickness of said tempered glass layer is 4-8mm.
4. crystalline silicon photovoltaic architecture-integral assembly according to claim 1 is characterized in that said sealed Cellophane is PVB.
5. crystalline silicon photovoltaic architecture-integral assembly according to claim 1 and 2 is characterized in that, said crystal silicon cell chip arrays is monocrystalline silicon battery chip arrays or polycrystal silicon cell chip arrays.
CN2011204255406U 2011-11-01 2011-11-01 Crystalline silicon building integrated photovoltaic assembly Expired - Fee Related CN202324417U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011204255406U CN202324417U (en) 2011-11-01 2011-11-01 Crystalline silicon building integrated photovoltaic assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011204255406U CN202324417U (en) 2011-11-01 2011-11-01 Crystalline silicon building integrated photovoltaic assembly

Publications (1)

Publication Number Publication Date
CN202324417U true CN202324417U (en) 2012-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011204255406U Expired - Fee Related CN202324417U (en) 2011-11-01 2011-11-01 Crystalline silicon building integrated photovoltaic assembly

Country Status (1)

Country Link
CN (1) CN202324417U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969396A (en) * 2012-11-13 2013-03-13 武汉艾丽思新能源有限公司 Method for preparing glass for photovoltaic glass curtain wall

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969396A (en) * 2012-11-13 2013-03-13 武汉艾丽思新能源有限公司 Method for preparing glass for photovoltaic glass curtain wall
CN102969396B (en) * 2012-11-13 2015-03-04 武汉艾丽思新能源有限公司 Method for preparing glass for photovoltaic glass curtain wall

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GR01 Patent grant
C14 Grant of patent or utility model
TR01 Transfer of patent right

Effective date of registration: 20130201

Address after: 300277 Dagang Binhai New Area of Tianjin city in Tang Zhen Xue Weitai Village Community Service Center (Tianjin Town Industrial Zone)

Patentee after: Tianjin Zhenhua Xiangping Glass Co., Ltd.

Address before: 300353 Tianjin City Station Town Jinnan District Huang industrial park

Patentee before: Tianjin Tianhuan Photovoltaic Solar Power Co., Ltd.

COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 300353 JINNAN, TIANJIN TO: 300277 BINHAI NEW DISTRICT, TIANJIN

ASS Succession or assignment of patent right

Owner name: TIANJIN ZHENHUA XIANGPING GLASS CO., LTD.

Free format text: FORMER OWNER: TIANJIN TIANJIN PHOTOVOLTAIC SOLAR ENERGY CO.LTD.

Effective date: 20130201

C41 Transfer of patent application or patent right or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120711

Termination date: 20131101

C17 Cessation of patent right