JP2018523752A - 感熱結合された金属ターゲットの冷却及び利用の最適化 - Google Patents
感熱結合された金属ターゲットの冷却及び利用の最適化 Download PDFInfo
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- JP2018523752A JP2018523752A JP2018503493A JP2018503493A JP2018523752A JP 2018523752 A JP2018523752 A JP 2018523752A JP 2018503493 A JP2018503493 A JP 2018503493A JP 2018503493 A JP2018503493 A JP 2018503493A JP 2018523752 A JP2018523752 A JP 2018523752A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【選択図】図1A
Description
Claims (15)
- ターゲット受容面(112)、及び前記ターゲット受容面と反対側の更なる面(110)を有するバッキング支持体(102)と、
前記更なる面に隣接して設けられる少なくとも1つの磁石アセンブリ(115)であって、前記バッキング支持体の前記ターゲット受容面が少なくとも1つの凹部(120)を有しており、前記凹部が前記磁石アセンブリの反対側に設けられている、少なくとも1つの磁石アセンブリ(115)と
を備える、スパッタリング源(100)。 - ターゲット材料(104)を備え、前記バッキング支持体の前記凹部に対向する領域における前記ターゲット材料の厚さ(T)が、前記バッキング支持体の前記凹部から離れた領域における前記ターゲット材料の厚さ(R)を上回る、請求項1に記載のスパッタリング源。
- 前記バッキング支持体の前記凹部に対向する領域における前記ターゲット材料の前記厚さ(T)と前記バッキング支持体の前記凹部から離れた領域における前記ターゲット材料の前記厚さ(R)との差が1mm以上である、請求項2に記載のスパッタリング源。
- 前記凹部の幅(W)が、前記磁石アセンブリの幅の少なくとも100%である、請求項1から3の何れか一項に記載のスパッタリング源。
- 前記凹部が、第2の面(135)と対向する第1の面(130)を有しており、前記第1の面が、前記第2の面に対して0°から10°までの傾斜を有している、請求項1から4の何れか一項に記載のスパッタリング源。
- 前記ターゲット材料を前記バッキング支持体に保持するための取付け手段を備える、請求項2から5の何れか一項に記載のスパッタリング源。
- 前記取付け手段が、クランプ、ネジ、はんだ及びこれらの任意の組み合わせから成る群から選択されうる、請求項6に記載のスパッタリング源。
- 前記ターゲット材料が、アルカリ金属又はアルカリ土類金属である、請求項2から7の何れか一項に記載のスパッタリング源。
- スパッタリング源を操作するための方法であって、
磁石アセンブリを設けること(402)と、
ターゲット受容面、及び前記ターゲット受容面と反対側の更なる面を有するバッキング支持体を設けること(404)であって、前記バッキング支持体の前記ターゲット受容面が少なくとも1つの凹部を有しており、前記凹部が前記磁石アセンブリの反対側に設けられている、設けること(404)と
を含む、方法。 - 前記バッキング支持体の前記ターゲット受容面にターゲット材料を提供することを含み、前記ターゲット材料が、前記バッキング支持体の前記凹部に係合するように構成された突起部を備える、請求項9に記載の方法。
- 前記突起部が前記バッキング支持体の前記凹部と接触し、前記ターゲット材料(104)と前記バッキング支持体(102)との間に熱界面(205)を作り出すように、前記ターゲット材料が熱膨張する、請求項10に記載の方法。
- 前記ターゲット材料と前記バッキング支持体との間の前記熱界面での熱伝導によって、前記ターゲット材料を冷却することを含む、請求項11に記載の方法。
- プラズマエリア(225)が、前記磁石アセンブリと同じ方向に移動するように、前記磁石アセンブリを前記バッキング支持体の前記更なる面に平行な方向に移動させることを含む、請求項9から12の何れか一項に記載の方法。
- 基板(308)のスパッタ堆積のための装置(300)であって、
基板(308)のスパッタ堆積のために構成された真空チャンバ(305)と、
請求項1から8の何れか一項に記載のスパッタリング源(100)と
を備える装置(300)。 - 前記バッキング支持体を冷却するための冷却手段(314)を備える、請求項14に記載の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2015/067047 WO2017016575A1 (en) | 2015-07-24 | 2015-07-24 | Cooling and utilization optimization of heat sensitive bonded metal targets |
Publications (1)
Publication Number | Publication Date |
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JP2018523752A true JP2018523752A (ja) | 2018-08-23 |
Family
ID=53835404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018503493A Pending JP2018523752A (ja) | 2015-07-24 | 2015-07-24 | 感熱結合された金属ターゲットの冷却及び利用の最適化 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20180195163A1 (ja) |
JP (1) | JP2018523752A (ja) |
KR (1) | KR102015609B1 (ja) |
CN (1) | CN107851548A (ja) |
WO (1) | WO2017016575A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210105291A (ko) | 2020-02-18 | 2021-08-26 | 도쿄엘렉트론가부시키가이샤 | 캐소드 유닛 및 성막 장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000509100A (ja) * | 1995-12-05 | 2000-07-18 | ミネソタ・マイニング・アンド・マニュファクチュアリング・カンパニー | リチウムのスパッタリング |
JP2010168621A (ja) * | 2009-01-22 | 2010-08-05 | Jun Ueno | ターゲット構造及びターゲット構造の製造方法 |
JP2011517329A (ja) * | 2007-06-18 | 2011-06-02 | アプライド マテリアルズ インコーポレイテッド | 寿命を延ばしスパッタリング均一性を高めたスパッタリングターゲット |
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JPS6277461A (ja) * | 1985-09-30 | 1987-04-09 | Shinku Kikai Kogyo Kk | 高周波スパツタ電極のバツキングプレ−ト |
US4885075A (en) * | 1987-01-27 | 1989-12-05 | Machine Technology, Inc. | Cooling device for a sputter target and source |
DE3912381A1 (de) * | 1988-04-15 | 1989-10-26 | Sharp Kk | Auffaengereinheit |
US5873989A (en) * | 1997-02-06 | 1999-02-23 | Intevac, Inc. | Methods and apparatus for linear scan magnetron sputtering |
US6013159A (en) * | 1997-11-16 | 2000-01-11 | Applied Materials, Inc. | Particle trap in a magnetron sputtering chamber |
EP1513963A1 (en) * | 2002-06-14 | 2005-03-16 | Tosoh Smd, Inc. | Target and method of diffusion bonding target to backing plate |
US20050051606A1 (en) * | 2003-09-09 | 2005-03-10 | Rene Perrot | Method of manufacturing an extended life sputter target assembly and product thereof |
ATE499697T1 (de) * | 2006-11-14 | 2011-03-15 | Applied Materials Inc | Magnetron-sputterquelle, sputter- beschichtungsanlage und verfahren zur beschichtung eines substrats |
JP2009097078A (ja) * | 2007-09-25 | 2009-05-07 | Canon Anelva Corp | ターゲット構造とターゲット保持装置 |
EP3431628A1 (en) * | 2011-04-21 | 2019-01-23 | View, Inc. | Lithium sputter targets |
US20120048725A1 (en) * | 2011-06-24 | 2012-03-01 | Primestar Solar, Inc. | Non-bonded rotary semiconducting targets and methods of their sputtering |
CN103343321A (zh) * | 2012-03-12 | 2013-10-09 | 有研亿金新材料股份有限公司 | 一种制造溅射靶材的方法 |
-
2015
- 2015-07-24 JP JP2018503493A patent/JP2018523752A/ja active Pending
- 2015-07-24 WO PCT/EP2015/067047 patent/WO2017016575A1/en active Application Filing
- 2015-07-24 US US15/742,180 patent/US20180195163A1/en not_active Abandoned
- 2015-07-24 CN CN201580081633.2A patent/CN107851548A/zh active Pending
- 2015-07-24 KR KR1020187005482A patent/KR102015609B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000509100A (ja) * | 1995-12-05 | 2000-07-18 | ミネソタ・マイニング・アンド・マニュファクチュアリング・カンパニー | リチウムのスパッタリング |
JP2011517329A (ja) * | 2007-06-18 | 2011-06-02 | アプライド マテリアルズ インコーポレイテッド | 寿命を延ばしスパッタリング均一性を高めたスパッタリングターゲット |
JP2010168621A (ja) * | 2009-01-22 | 2010-08-05 | Jun Ueno | ターゲット構造及びターゲット構造の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210105291A (ko) | 2020-02-18 | 2021-08-26 | 도쿄엘렉트론가부시키가이샤 | 캐소드 유닛 및 성막 장치 |
US11581171B2 (en) | 2020-02-18 | 2023-02-14 | Tokyo Electron Limited | Cathode unit and film forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
US20180195163A1 (en) | 2018-07-12 |
WO2017016575A1 (en) | 2017-02-02 |
CN107851548A (zh) | 2018-03-27 |
KR20180032636A (ko) | 2018-03-30 |
KR102015609B1 (ko) | 2019-08-28 |
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