JP2018512742A - パワーエレクトロニクスモジュール - Google Patents
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Abstract
Description
この発明は、大電力半導体の実装の分野に関する。特に、この発明は、パワーエレクトロニクスモジュールに、および電気コンバータ用のパワーセルに関する。
たとえばSiC基板ベースのワイドバンドギャップ半導体装置は、Si基板ベースの同等の装置よりも高い最大阻止電圧を提供することができる。SiC半導体装置のより低いスイッチング損失と組合されたより高い最大阻止電は、中電圧および高電圧用途用のコンバータ設計のさらなる柔軟性を可能にする。
さらに、SiC装置は、高温および大電流動作を可能にするであろうし、場合によってはSiC面積およびパワーモジュール占有面積の著しい収縮を可能にし得る。
この発明の目的は、ワイドバンドギャップスイッチング装置の異なる設計および動作特性を考慮するパワーエレクトロニクスモジュールを提供することである。たとえば、そのようなパワーエレクトロニクスモジュールは、ワイドバンドギャップ装置が通常必要とする強化された電気絶縁性と組合された良好な冷却能力を提供する。
以下の文章において、この発明の主題を、添付図面に図示される例示的な実施形態を参照してより詳細に説明する。
図1は、第1の液体冷却器12aと、第2の液体冷却器12bと、冷却器12a、12b間に介在する複数の半導体チップ14とを含む、パワーエレクトロニクスモジュール10を示す。半導体チップ14および冷却器12は絶縁材16内に埋め込まれ、それはパワーエレクトロニクスモジュール10の封止部18を形成する。
Claims (15)
- パワーエレクトロニクスモジュール(10)であって、
冷却液を受けるための冷却チャネル(22)を含む第1の液体冷却器(12a)を含み、前記第1の液体冷却器(12a)は、前記パワーエレクトロニクスモジュール(10)の第1の端子(24)を提供する金属体(20)を含み、前記パワーエレクトロニクスモジュールはさらに、
冷却液を受けるための冷却チャネル(22)を含む第2の液体冷却器(12b)を含み、前記第2の液体冷却器(12b)は、前記パワーエレクトロニクスモジュール(10)の第2の端子(24)を提供する金属体(20)を含み、前記パワーエレクトロニクスモジュールはさらに、
前記第1の液体冷却器(12a)と前記第2の液体冷却器(12b)との間に配置された複数の半導体チップ(14)を含み、各半導体チップ(14)の第1の電極(32a)が前記第1の液体冷却器(12a)に接合されるようになっており、前記第1の電極(32a)は前記第1の液体冷却器(12a)と電気的に接触し、各半導体チップ(14)の対向する第2の電極(32b)は前記第2の液体冷却器(12b)と電気的に接触するようになっており、前記パワーエレクトロニクスモジュールはさらに、
前記第1の液体冷却器(12a)、前記第2の液体冷却器(12b)、および前記複数の半導体チップ(14)を絶縁材(16)内に成形することによって形成された絶縁封止部(18)を含み、前記第1の液体冷却器(12a)、前記第2の液体冷却器(12b)、および前記複数の半導体チップ(14)は、前記絶縁材(16)上に少なくとも部分的に埋め込まれるようになっている、パワーエレクトロニクスモジュール(10)。 - 前記第1の冷却器(12a)および前記第2の冷却器(12b)は、前記端子(34)および冷却液接続部(26)のみが前記絶縁材(16)から突出するように前記絶縁材(16)内に埋め込まれ、および/または、
前記複数の半導体チップ(14)は前記絶縁材(16)内に完全に埋め込まれる、請求項1に記載のパワーエレクトロニクスモジュール(10)。 - 前記第1の冷却器(12a)は、前記半導体チップ(14)が接合されるキャビティ(34)を含む、請求項1または2に記載のパワーエレクトロニクスモジュール(10)。
- 半導体チップ(14)は、前記第2の液体冷却器(12b)から突出するポスト(36)に接合され、および/または、
前記ポスト(36)のうちの少なくとも1つは前記第2の液体冷却器(12b)の前記金属体(20)の一部であり、または、前記ポスト(36)のうちの少なくとも1つは前記第2の液体冷却器(12b)に接合される、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。 - 前記半導体チップ(14)は、ワイドバンドギャップ半導体装置を担持する、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。
- 前記第1の液体冷却器(12a)および前記第2の液体冷却器(12b)は、少なくとも1つの貫通穴ピン(52)と整列される、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。
- 前記パワーエレクトロニクスモジュール(10)を等しく設計されたパワーエレクトロニクスモジュールと直列接続するために、前記パワーエレクトロニクスモジュールが前記等しく設計されたパワーエレクトロニクスモジュールと積み重ねられ得るように、前記第1の液体冷却器(12a)の前記金属体(20)は、前記絶縁材(16)から突出する平面状の第1の端子(24’)を提供し、前記第2の液体冷却器(12b)の前記金属体(20)は、前記絶縁材(16)から反対方向に突出する平面状の第2の端子(24’)を提供する、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。
- ゲート電極(40)を有する半導体チップ(14)のそばに、金属配線層(46)を含む基板(44)が、前記金属配線層(46)が前記第1の液体冷却器(12a)から電気的に分離され、前記ゲート電極(40)がワイヤボンド(42)を用いて前記金属配線層(46)に接続されるように、前記第1の液体冷却器(12a)に取付けられる、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。
- ゲート端子(50)に電気的に接続されたばね(48)が、前記第2の液体冷却器(12b)に電気的に絶縁されて取付けられ、前記金属配線層(46)に押し付けられ、または、
ゲート端子ロッド(54)が、前記金属配線層(46)に電気的に接触するように前記第2の液体冷却器(12b)を通って誘導され、および/または、前記ゲート端子ロッド(54)に接続されたゲートコントローラ(55)が、前記封止部(18)上に位置付けられる、請求項8に記載のパワーエレクトロニクスモジュール(10)。 - 前記第1の液体冷却器(12a)および/または前記第2の液体冷却器(12b)は、前記パワーエレクトロニクスモジュール(10)から両側で突出する2つ以上の端子(24)を提供する、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。
- 前記第1の液体冷却器(12a)および前記半導体チップ(14)は、前記第2の液体冷却器(12b)と、前記第1の液体冷却器(12a)および前記第2の液体冷却器(12b)に平行に配置された端子プレート(58)とから形成された端子ケージ(56)の内部に配置され、
前記第2の液体冷却器(12b)と前記端子プレート(58)とは、側方接続プレート(60)を介して相互接続される、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。 - 前記パワーエレクトロニクスモジュール(10)の前記液体冷却器(12a、12b、12c)のうちの少なくとも1つは、銅、アルミニウム、AlSiC、モリブデン、および/またはこれらの材料の合金から作られる、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。
- 前記絶縁材(16)に埋め込まれた前記液体冷却器(12a、12b、12c)および前記半導体チップ(14)を収容するハウジング(62)をさらに含み、
前記ハウジング(62)は、前記液体冷却器および前記半導体チップを包囲する爆発緩和材(64)で充填される、前述の請求項のいずれか1項に記載のパワーエレクトロニクスモジュール(10)。 - 前述の請求項のいずれか1項に記載のハーフブリッジ・パワーエレクトロニクスモジュール(10’)であって、
第1のDC端子(24)を提供する前記第1の液体冷却器(12a)と、
第2のDC端子(24)を提供する前記第2の液体冷却器(12b)と、
冷却液を受けるための冷却チャネル(22)を含む中間液体冷却器(12c)とを含み、前記中間液体冷却器(12c)は、前記パワーエレクトロニクスモジュールのAC端子(24”)を提供する金属体(20)を含み、前記ハーフブリッジ・パワーエレクトロニクスモジュールはさらに、
前記第1の液体冷却器(12a)に接合され、導電性ポスト(36)を介して前記中間液体冷却器(12c)と電気的に接触している、半導体チップ(14)の第1の層(30)と、
前記中間液体冷却器(12c)に接合され、導電性ポスト(36)を介して前記第2の液体冷却器(12b)と電気的に接触している、半導体チップ(14)の第2の層(30)とを含む、ハーフブリッジ・パワーエレクトロニクスモジュール(10’)。 - 少なくとも1つのキャパシタ(68)と、
前記キャパシタに搭載された、前述の請求項のいずれか1項に記載の少なくとも1つのパワーエレクトロニクスモジュール(10’)とを含む、電気コンバータ(66)用のパワーセル。
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