JP2018511699A5 - - Google Patents
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- Publication number
- JP2018511699A5 JP2018511699A5 JP2017548472A JP2017548472A JP2018511699A5 JP 2018511699 A5 JP2018511699 A5 JP 2018511699A5 JP 2017548472 A JP2017548472 A JP 2017548472A JP 2017548472 A JP2017548472 A JP 2017548472A JP 2018511699 A5 JP2018511699 A5 JP 2018511699A5
- Authority
- JP
- Japan
- Prior art keywords
- containing powder
- dopant
- carbon
- particle size
- average particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000843 powder Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
Claims (1)
- 前記炭素含有粉末又は前記ドーパント含有粉末が、５０μｍよりも小さい直径を有する平均粒子径を有することを特徴とする請求項１〜５のいずれか１項に記載の方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM70/2015 | 2015-03-19 | ||
| ATGM70/2015U AT14701U1 (de) | 2015-03-19 | 2015-03-19 | Beschichtungsquelle zur Herstellung dotierter Kohlenstoffschichten |
| PCT/EP2016/000462 WO2016146256A1 (de) | 2015-03-19 | 2016-03-15 | Beschichtungsquelle zur herstellung dotierter kohlenstoffschichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018511699A JP2018511699A (ja) | 2018-04-26 |
| JP2018511699A5 true JP2018511699A5 (ja) | 2019-02-07 |
| JP6874930B2 JP6874930B2 (ja) | 2021-05-19 |
Family
ID=55656514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017548472A Active JP6874930B2 (ja) | 2015-03-19 | 2016-03-15 | ドープされた炭素層を製造するためのコーティング源 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10781102B2 (ja) |
| EP (1) | EP3271497B1 (ja) |
| JP (1) | JP6874930B2 (ja) |
| KR (1) | KR102622490B1 (ja) |
| CN (1) | CN107406971B (ja) |
| AT (1) | AT14701U1 (ja) |
| WO (1) | WO2016146256A1 (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017124656A1 (de) | 2016-10-25 | 2018-04-26 | Schaeffler Technologies AG & Co. KG | Verfahren zur Herstellung einer Kohlenstoffbeschichtung |
| KR102612989B1 (ko) | 2017-12-01 | 2023-12-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 고 에칭 선택성 비정질 탄소 막 |
| CN107937873B (zh) * | 2017-12-22 | 2023-11-14 | 深圳先进技术研究院 | 碳掺杂的过渡金属硼化物涂层、碳-过渡金属硼化物复合涂层、制备方法及应用和切削工具 |
| FR3082527B1 (fr) * | 2018-06-18 | 2020-09-18 | Hydromecanique & Frottement | Piece revetue par un revetement de carbone amorphe non-hydrogene sur une sous-couche comportant du chrome, du carbone et du silicium |
| US11846038B2 (en) * | 2018-08-30 | 2023-12-19 | Senic Inc. | Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material |
| DE102018125631A1 (de) | 2018-10-16 | 2020-04-16 | Schaeffler Technologies AG & Co. KG | Schichtsystem, Rollelement und Verfahren |
| JP6756886B1 (ja) * | 2019-04-26 | 2020-09-16 | Ｊｘ金属株式会社 | ニオブ酸カリウムナトリウムスパッタリングターゲット |
| KR102317512B1 (ko) * | 2019-09-11 | 2021-10-26 | 강원대학교산학협력단 | 리튬 이차 전지용 음극 활물질, 이의 제조방법 및 이를 포함하는 리튬 이차 전지 |
| KR20230052972A (ko) * | 2020-08-21 | 2023-04-20 | 램 리써치 코포레이션 | 내식성 플라즈마 프로세싱 챔버 컴포넌트들 |
| CN113913735B (zh) * | 2021-09-07 | 2022-06-24 | 广州今泰科技股份有限公司 | 一种钒/钇共掺杂dlc涂层及其制备方法 |
| AT18142U1 (de) * | 2023-02-08 | 2024-03-15 | Plansee Composite Mat Gmbh | Siliziumhaltige übergangsmetallboridverdampfungsquelle |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9910842D0 (en) * | 1999-05-10 | 1999-07-07 | Univ Nanyang | Composite coatings |
| JP2005060765A (ja) | 2003-08-12 | 2005-03-10 | Yamaguchi Prefecture | 硬質皮膜とその製造方法 |
| EP2062994B1 (en) * | 2006-10-13 | 2016-07-27 | JX Nippon Mining & Metals Corporation | Sb-Te BASE ALLOY SINTER SPUTTERING TARGET |
| WO2009116213A1 (ja) * | 2008-03-17 | 2009-09-24 | 日鉱金属株式会社 | 焼結体ターゲット及び焼結体の製造方法 |
| WO2010137485A1 (ja) | 2009-05-27 | 2010-12-02 | Jx日鉱日石金属株式会社 | 焼結体ターゲット及び焼結体の製造方法 |
| US20120279857A1 (en) * | 2010-04-26 | 2012-11-08 | Jx Nippon Mining & Metals Corporation | Sb-Te-Based Alloy Sintered Compact Sputtering Target |
| AT11884U1 (de) | 2010-05-04 | 2011-06-15 | Plansee Se | Target |
| CN102363215A (zh) * | 2011-11-04 | 2012-02-29 | 中南大学 | 铬铝合金靶材的粉末真空热压烧结制备方法 |
| MY167825A (en) * | 2012-06-18 | 2018-09-26 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film |
-
2015
- 2015-03-19 AT ATGM70/2015U patent/AT14701U1/de unknown
-
2016
- 2016-03-15 WO PCT/EP2016/000462 patent/WO2016146256A1/de active Application Filing
- 2016-03-15 EP EP16713290.1A patent/EP3271497B1/de active Active
- 2016-03-15 CN CN201680016783.XA patent/CN107406971B/zh active Active
- 2016-03-15 KR KR1020177026239A patent/KR102622490B1/ko active IP Right Grant
- 2016-03-15 US US15/556,379 patent/US10781102B2/en active Active
- 2016-03-15 JP JP2017548472A patent/JP6874930B2/ja active Active
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