JP2018511699A5 - - Google Patents

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Publication number
JP2018511699A5
JP2018511699A5 JP2017548472A JP2017548472A JP2018511699A5 JP 2018511699 A5 JP2018511699 A5 JP 2018511699A5 JP 2017548472 A JP2017548472 A JP 2017548472A JP 2017548472 A JP2017548472 A JP 2017548472A JP 2018511699 A5 JP2018511699 A5 JP 2018511699A5
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JP
Japan
Prior art keywords
containing powder
dopant
carbon
particle size
average particle
Prior art date
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Application number
JP2017548472A
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English (en)
Japanese (ja)
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JP6874930B2 (ja
JP2018511699A (ja
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Publication date
Priority claimed from ATGM70/2015U external-priority patent/AT14701U1/de
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Publication of JP2018511699A publication Critical patent/JP2018511699A/ja
Publication of JP2018511699A5 publication Critical patent/JP2018511699A5/ja
Application granted granted Critical
Publication of JP6874930B2 publication Critical patent/JP6874930B2/ja
Active legal-status Critical Current
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JP2017548472A 2015-03-19 2016-03-15 ドープされた炭素層を製造するためのコーティング源 Active JP6874930B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ATGM70/2015 2015-03-19
ATGM70/2015U AT14701U1 (de) 2015-03-19 2015-03-19 Beschichtungsquelle zur Herstellung dotierter Kohlenstoffschichten
PCT/EP2016/000462 WO2016146256A1 (de) 2015-03-19 2016-03-15 Beschichtungsquelle zur herstellung dotierter kohlenstoffschichten

Publications (3)

Publication Number Publication Date
JP2018511699A JP2018511699A (ja) 2018-04-26
JP2018511699A5 true JP2018511699A5 (OSRAM) 2019-02-07
JP6874930B2 JP6874930B2 (ja) 2021-05-19

Family

ID=55656514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017548472A Active JP6874930B2 (ja) 2015-03-19 2016-03-15 ドープされた炭素層を製造するためのコーティング源

Country Status (7)

Country Link
US (1) US10781102B2 (OSRAM)
EP (1) EP3271497B1 (OSRAM)
JP (1) JP6874930B2 (OSRAM)
KR (1) KR102622490B1 (OSRAM)
CN (1) CN107406971B (OSRAM)
AT (1) AT14701U1 (OSRAM)
WO (1) WO2016146256A1 (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017124656A1 (de) 2016-10-25 2018-04-26 Schaeffler Technologies AG & Co. KG Verfahren zur Herstellung einer Kohlenstoffbeschichtung
WO2019108376A1 (en) 2017-12-01 2019-06-06 Applied Materials, Inc. Highly etch selective amorphous carbon film
CN107937873B (zh) * 2017-12-22 2023-11-14 深圳先进技术研究院 碳掺杂的过渡金属硼化物涂层、碳-过渡金属硼化物复合涂层、制备方法及应用和切削工具
FR3082527B1 (fr) * 2018-06-18 2020-09-18 Hydromecanique & Frottement Piece revetue par un revetement de carbone amorphe non-hydrogene sur une sous-couche comportant du chrome, du carbone et du silicium
US11846038B2 (en) * 2018-08-30 2023-12-19 Senic Inc. Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material
DE102018125631A1 (de) 2018-10-16 2020-04-16 Schaeffler Technologies AG & Co. KG Schichtsystem, Rollelement und Verfahren
JP6756886B1 (ja) * 2019-04-26 2020-09-16 Ｊｘ金属株式会社 ニオブ酸カリウムナトリウムスパッタリングターゲット
KR102317512B1 (ko) * 2019-09-11 2021-10-26 강원대학교산학협력단 리튬 이차 전지용 음극 활물질, 이의 제조방법 및 이를 포함하는 리튬 이차 전지
WO2022040233A1 (en) * 2020-08-21 2022-02-24 Lam Research Corporation Erosion resistant plasma processing chamber components
CN113913735B (zh) * 2021-09-07 2022-06-24 广州今泰科技股份有限公司 一种钒/钇共掺杂dlc涂层及其制备方法
CN116083847B (zh) * 2023-01-16 2025-03-25 厦门金鹭特种合金有限公司 一种二硼化钛硬质涂层、涂层刀具及制备方法
AT18142U1 (de) * 2023-02-08 2024-03-15 Plansee Composite Mat Gmbh Siliziumhaltige übergangsmetallboridverdampfungsquelle
DE102023129550A1 (de) 2023-10-26 2025-04-30 Oerlikon Surface Solutions Ag, Pfäffikon Schicht mit eingebauten abrasiven Partikeln

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9910842D0 (en) * 1999-05-10 1999-07-07 Univ Nanyang Composite coatings
JP2005060765A (ja) * 2003-08-12 2005-03-10 Yamaguchi Prefecture 硬質皮膜とその製造方法
KR101356280B1 (ko) 2006-10-13 2014-01-28 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Ｓｂ-Ｔｅ 기 합금 소결체 스퍼터링 타겟
US20110017590A1 (en) 2008-03-17 2011-01-27 Jx Nippon Mining & Metals Corporation Sintered Compact Target and Method of Producing Sintered Compact
KR20190112857A (ko) * 2009-05-27 2019-10-07 제이엑스금속주식회사 소결체 타겟 및 소결체의 제조 방법
KR101967945B1 (ko) * 2010-04-26 2019-04-10 제이엑스금속주식회사 Ｓｂ-Ｔｅ기 합금 소결체 스퍼터링 타깃
AT11884U1 (de) 2010-05-04 2011-06-15 Plansee Se Target
CN102363215A (zh) * 2011-11-04 2012-02-29 中南大学 铬铝合金靶材的粉末真空热压烧结制备方法
US9540724B2 (en) * 2012-06-18 2017-01-10 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film

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