JP2018511182A - 電荷キャリアをガイドする装置及びその使用方法 - Google Patents
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Abstract
Description
特許文献1は固体内で電子をガイドする装置と方法を紹介しており、ここでは、半導体薄膜を電気絶縁体の球状曲面に付ける。磁場により、該薄膜での電子の移動経路の曲率半径が薄膜の曲率半径と同一または類似となる。曲面薄膜上の2ヶ所離れた地点の間に電位差が発生する。半導体薄膜の厚さは半導体薄膜内の電子の平均自由行路長の範囲内にあるべきであり、この長さは均質な半導体薄膜において非常に小さくて実現するのが難しい。
Claims (15)
- 電荷及び/又は磁気モーメントを有する電荷や電子キャリア(2)をガイドし、移動領域(B)において、曲線状や折れ線状のメイン経路(H)にキャリア(2)をガイドするガイド(3)と、
前記メイン経路(H)に沿って配置された電気的連結部(4,5)と、
前記電気的連結部(4,5)から電圧や電力が排出されるようにし、キャリア(2)が前記電気連結部(4,5)において各々異なる確率密度/存在密度を有するように前記メイン経路(H)に沿ってキャリア(2)をガイドするフィールド(F)を生成するフィールド生成手段(10)と、を有する装置(1)であって、
前記ガイド(3)が前記移動領域(B)を形成するための2次元電子ガス層または薄い超伝導層(11)を有し;及び/又は
前記ガイド(3)及び/又は前記移動領域(B)及び/又は前記メイン経路(H)が平面(E)や閉鎖面に沿って曲線状及び/又は折れ線状で延びることを特徴とする装置。 - 前記ガイド(3)が互いに重なって置かれ、フェルミ準位が互いに異なる2個の固体層(6,7)を有し、前記移動領域(B)及び/又は前記2次元電子ガス層が前記2個の固体層(6,7)の間の境界面に沿って形成されることを特徴とする、請求項1に記載の装置。
- 前記ガイド(3)が互いに重なって置かれる複数の前記移動領域(B)及び/又は前記電子ガス層及び/又は前記超伝導層(11)を有することを特徴とする、請求項1または2に記載の装置。
- キャリア(2)のための前記移動領域(B)の1つまたは複数の側面(9)が少なくとも部分的に拡散散乱させるように及び/又は全体がミラー角で反射することはないように形成されることを特徴とする、請求項1〜3のいずれか1項に記載の装置。
- 前記移動領域(B)の平均幅(W)と前記メイン経路(H)の曲率半径(R)が前記移動領域(B)内のキャリア(2)の平均自由行路以下であることを特徴とする、請求項1〜4のいずれか1項に記載の装置。
- 前記ガイド(3)及び/又は前記移動領域(B)が1回又は複数回折れ曲がり、及び/又は、一部がアーチ形や半円形であることを特徴とする、請求項1〜5のいずれか1項に記載の装置。
- 前記ガイド(3)及び/又は前記移動領域(B)の曲率半径(R)が100nmより大きく、好ましくは200nmより大きく、及び/又は、2000nmより小さく、好ましくは1600nmより小さいことを特徴とする、請求項1〜6のいずれか1項に記載の装置。
- 前記メイン経路(H)の曲率半径(R)が100nmより大きく、好ましくは200nmより大きく、及び/又は、2000nmより小さく、好ましくは1600nmより小さいことを特徴とする、請求項1〜7のいずれか1項に記載の装置。
- 磁場を含むフィールドを生成するフィールド生成手段(10)をさらに含むことを特徴とする、請求項1〜8のいずれか1項に記載の装置。
- キャリア(2)が前記メイン経路(H)及び/又は前記移動領域(B)及び/又は前記ガイド(3)の曲率半径(R)と同じ曲率半径を有する軌道にガイドされるようにキャリア(2)をガイドするためのフィールド(F)やフィールド生成手段(10)がキャリア(2)の平均速度を考慮して設定されることを特徴とする、請求項1〜9のいずれか1項に記載の装置。
- 請求項1〜10のいずれか1項に記載の装置(1)の使用方法であって、
フィールド(F)を一定に維持した状態で連結部(4,5)を介して出力される電圧や電力としてキャリア(2)の熱エネルギー及び/又はキャリア(2)の電磁気内在/周辺雑音から電圧や電力を生成することを特徴とする使用方法。 - 請求項1〜10のいずれか1項に記載の装置(1)の使用方法であって、
フィールド(F)を一定に維持した状態で連結部(4,5)を介して電力を出力して電荷キャリア(2)の熱エネルギーを除去して冷却することを特徴とする使用方法。 - 請求項1〜10のいずれか1項に記載の装置(1)の使用方法であって、
フィールド(F)を一定に維持した状態で、連結部(4,5)を介して電流を測定して電荷キャリア(2)の散乱や軌道を測定または決定し、及び/又は、電磁気輻射を測定または決定することを特徴とする使用方法。 - 請求項1〜10のいずれか1項に記載の装置(1)の使用方法であって、
1次元や2次元電子ガスや超伝導体内部の物理的特性を測定または決定することを特徴とする使用方法。 - 曲線状や折れ線状のメイン経路(H)に沿って電気的連結部(4,5)が配置され、電荷キャリア(2)をガイドするガイド(3)を備えた装置(1)の使用方法であって、
前記ガイド(3)が移動領域(B)を形成するための2次元電子ガス層や超伝導層(11)を有し;及び/又は
前記ガイド(3)及び/又は移動領域(B)が平面(E)や閉鎖面から曲線状及び/又は折れ線状で延び;
前記ガイド(3)に作用する磁場強度が連結部(4,5)を介した電圧の測定とそこからの磁場強度の決定によって検知または測定されることを特徴とする使用方法。
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CN111896897B (zh) * | 2015-01-12 | 2024-02-09 | 赫尔穆特.惠得利 | 用于引导载流子的设备和其应用 |
US11871680B2 (en) | 2018-01-19 | 2024-01-09 | Helmut Weidlich | Device for guiding charge carriers and use thereof |
US11101215B2 (en) * | 2018-09-19 | 2021-08-24 | PsiQuantum Corp. | Tapered connectors for superconductor circuits |
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CN111896897B (zh) * | 2015-01-12 | 2024-02-09 | 赫尔穆特.惠得利 | 用于引导载流子的设备和其应用 |
US11871680B2 (en) * | 2018-01-19 | 2024-01-09 | Helmut Weidlich | Device for guiding charge carriers and use thereof |
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CA2972678C (en) | 2022-07-26 |
KR102560442B1 (ko) | 2023-07-28 |
KR20170103903A (ko) | 2017-09-13 |
CN111896897B (zh) | 2024-02-09 |
JP6892392B2 (ja) | 2021-06-23 |
EP3751621B1 (de) | 2023-06-07 |
US20180269373A1 (en) | 2018-09-20 |
EP3751621A1 (de) | 2020-12-16 |
CA2972678A1 (en) | 2016-07-21 |
CN107209232B (zh) | 2020-07-07 |
CN111896897A (zh) | 2020-11-06 |
US11063200B2 (en) | 2021-07-13 |
EP3245675B1 (de) | 2020-05-20 |
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