JP2018505558A - 半導体構造体 - Google Patents
半導体構造体 Download PDFInfo
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- JP2018505558A JP2018505558A JP2017539283A JP2017539283A JP2018505558A JP 2018505558 A JP2018505558 A JP 2018505558A JP 2017539283 A JP2017539283 A JP 2017539283A JP 2017539283 A JP2017539283 A JP 2017539283A JP 2018505558 A JP2018505558 A JP 2018505558A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- G06F1/16—Constructional details or arrangements
- G06F1/18—Packaging or power distribution
- G06F1/183—Internal mounting support structures, e.g. for printed circuit boards, internal connecting means
- G06F1/185—Mounting of expansion boards
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Abstract
Description
Claims (16)
- 半導体構造体であって、
少なくとも1つの半導体プロセッサ・ウエハを備え、前記半導体プロセッサ・ウエハは、前記半導体プロセッサ・ウエハ自体の熱膨張率と同様の熱膨張率を有しており液体冷却される基板に非デバイス側で強固に取り付けられ、前記半導体プロセッサ・ウエハは、オンチップ・ワイヤリング・レベルによって相互接続された2つ以上のチップを含み、各チップの基板は、前記半導体プロセッサ・ウエハのデバイス側で個別のチップに取り付けられている、半導体構造体。 - 前記チップの基板は、前記ウエハ上の前記チップよりも面積が小さい、請求項1に記載の構造体。
- 各チップの基板に取り付けられた1つまたは複数のカードをさらに備えており、各カードの主面は前記半導体プロセッサ・ウエハの表面と垂直である、請求項2に記載の構造体。
- 前記半導体プロセッサ・ウエハと前記チップの基板との間に積み重ねられ、前記半導体プロセッサ・ウエハと前記チップの基板とに電気的に相互接続されている1つまたは複数の追加的なウエハをさらに備える、請求項2に記載の構造体。
- 2つ以上の前記半導体プロセッサ・ウエハであって、それらの各非デバイス側で前記液体冷却される基板に強固に取り付けられており、前記液体冷却される基板は、液体冷却を提供するために、共通の1組のマニホルド層に取り付けられた1つまたは複数のシリコン・マイクロチャネル・ウエハを備えた、2つ以上の前記半導体プロセッサ・ウエハと、
隣接する半導体プロセッサ・ウエハ間の信号伝達を提供するように構成された相互接続基板と、
を備えており、前記マニホルド層は、前記シリコン・マイクロチャネル・ウエハの熱膨張率と同様の熱膨張率を有する、請求項1に記載の構造体。 - 前記マニホルド層は、一体化されたガラス層またはシリコン層のうちの1つまたは複数と、1つまたは複数の積み重ねられたシリコン層とを備える、請求項5に記載の構造体。
- 前記半導体プロセッサ・ウエハは、垂直な相互接続によって一体化されている複数の積み重ねられたウエハを含む、請求項5に記載の構造体。
- 前記半導体プロセッサ・ウエハは、メモリ・ウエハと、プロセッサ・ウエハと、フィールド・プログラマブル・ゲート・アレイ(FPGA)とのうちの1つまたは複数を含む、請求項5に記載の構造体。
- 各チップの基板は、有機材料、セラミック材料、またはシリコン材料のうちの1つを備えており、各チップの基板は、前記半導体プロセッサ・ウエハに、電力と電圧調整と信号通信とを提供するように構成されている、請求項5に記載の構造体。
- 隣接する半導体プロセッサ・ウエハ間の信号伝達が、1つまたは複数の電気信号と光信号とを用いる、請求項5に記載の構造体。
- 半導体構造体であって、
1つまたは複数の冷却層と、1つまたは複数の冷却チャネルと、前記冷却チャネルと流体連通関係にある1つまたは複数の冷却剤インレットおよび冷却剤アウトレットと、前記冷却層上に配置されており1つまたは複数の接続点を有するデバイス層と、デバイス層領域とを含んでおり、デバイス層の熱膨張率が前記1つまたは複数の冷却層の熱膨張率と等しい、基板と、
アレイとして配列されており、前記デバイス層上に配置され前記デバイス層に電気的に取り付けられている複数の積層基板であって、積層基板の熱膨張率は前記デバイス層の熱膨張率と異なっており、各積層基板は、それが取り付けられている前記デバイス層領域の部分よりも面積が小さく、各積層基板は、隣接する積層基板の側部の間にギャップを備えた、前記複数の積層基板と、
を備えており、前記積層基板は、積層基板間の前記ギャップに亘り電気的にも機械的にも相互に接続されておらず、前記積層基板は、熱膨張に起因する前記デバイス層と相互接続部と冷却層とのワーピングおよび容認できない応力を防止するのに十分であるほど小さい、半導体構造体。 - 前記積層基板が、PCボードと、セラミック基板またはガラス基板と、ビルトアップ有機基板とのうちの1つまたは複数を備えており、前記デバイス層が、高い熱伝導性を有する材料によって前記冷却層に強固に取り付けられている、請求項11に記載の構造体。
- 前記デバイス層が1つまたは複数の半導体ウエハを備える、請求項11に記載の構造体。
- 前記基板が、ガラスおよび半導体材料のうちの1つまたは複数を備える、請求項11に記載の構造体。
- 前記接続点が、前記デバイス層と前記積層基板との間に配置されたC4マイクロ・ハンダ・ボールを備える、請求項11に記載の構造体。
- 複数の半導体構造体と、
各半導体構造体間のウエハ・ギャップと、
前記ウエハ・ギャップに亘る異なる半導体構造体上の積層基板間の1つまたは複数の電気的接続部と、
をさらに備えており、各半導体構造体の前記冷却剤インレットおよび冷却剤アウトレットのうちの1つまたは複数が、共通の冷却システムを形成するように接続されている、請求項11に記載の構造体。
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