JP2018504032A - 相補的共通ゲートおよび共通ソース増幅器における利得制御 - Google Patents

相補的共通ゲートおよび共通ソース増幅器における利得制御 Download PDF

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JP2018504032A
JP2018504032A JP2017532861A JP2017532861A JP2018504032A JP 2018504032 A JP2018504032 A JP 2018504032A JP 2017532861 A JP2017532861 A JP 2017532861A JP 2017532861 A JP2017532861 A JP 2017532861A JP 2018504032 A JP2018504032 A JP 2018504032A
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Prior art keywords
signal
gain
current
transistor
shunt
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Pending
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JP2017532861A
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Japanese (ja)
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JP2018504032A5 (enExample
Inventor
リャオ、チ−ファン
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Qualcomm Inc
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Qualcomm Inc
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Publication of JP2018504032A publication Critical patent/JP2018504032A/ja
Publication of JP2018504032A5 publication Critical patent/JP2018504032A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45654—Controlling the active amplifying circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/54—Two or more capacitor coupled amplifier stages in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45228—A transformer being added at the output or the load circuit of the dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
JP2017532861A 2014-12-18 2015-11-17 相補的共通ゲートおよび共通ソース増幅器における利得制御 Pending JP2018504032A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/575,851 US9407226B2 (en) 2014-12-18 2014-12-18 Gain control in complementary common gate and common source amplifiers
US14/575,851 2014-12-18
PCT/US2015/061142 WO2016099754A1 (en) 2014-12-18 2015-11-17 Gain control in complementary common gate and common source amplifiers

Publications (2)

Publication Number Publication Date
JP2018504032A true JP2018504032A (ja) 2018-02-08
JP2018504032A5 JP2018504032A5 (enExample) 2018-11-29

Family

ID=54704153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017532861A Pending JP2018504032A (ja) 2014-12-18 2015-11-17 相補的共通ゲートおよび共通ソース増幅器における利得制御

Country Status (7)

Country Link
US (1) US9407226B2 (enExample)
EP (1) EP3235123A1 (enExample)
JP (1) JP2018504032A (enExample)
KR (1) KR20170096111A (enExample)
CN (1) CN107005202B (enExample)
BR (1) BR112017012672A2 (enExample)
WO (1) WO2016099754A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250141476A1 (en) * 2023-10-30 2025-05-01 Qualcomm Incorporated Controlling receiver gain for proactive jammer protection from transmit signal of integrated transmitter

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9417641B2 (en) * 2013-11-04 2016-08-16 Marvell World Trade, Ltd. Memory effect reduction using low impedance biasing
CN106849885B (zh) * 2017-03-28 2023-11-21 常州无线电厂有限公司 一种低噪声高线性放大器
KR102595794B1 (ko) * 2018-08-31 2023-10-30 삼성전자주식회사 송신 장치에서 전력을 증폭하기 위한 장치 및 방법
US11165398B2 (en) * 2018-10-31 2021-11-02 Texas Instruments Incorporated Chopper-stabilized programmable gain amplifier
US11095334B1 (en) 2020-09-22 2021-08-17 Apple Inc. Amplifier circuitry for carrier aggregation
CN112332781B (zh) * 2020-11-03 2022-10-18 湖南师范大学 一种基于变压器和互补共源共栅混合拓扑的宽带混频器
US11588447B2 (en) 2020-12-21 2023-02-21 Psemi Corporation Source switch split LNA design with thin cascodes and high supply voltage
TWI774512B (zh) * 2021-08-11 2022-08-11 瑞昱半導體股份有限公司 功率放大器電路
US12431848B2 (en) 2022-06-06 2025-09-30 Mediatek Singapore Pte. Ltd. Push-pull power amplifier

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008512058A (ja) * 2004-08-30 2008-04-17 ウィリンクス インコーポレイテッド 高周波無線受信機の回路および方法
JP2008211535A (ja) * 2007-02-27 2008-09-11 Sony Corp 増幅回路、受信機および受信機用ｉｃ
US20090108943A1 (en) * 2007-10-24 2009-04-30 Industrial Technology Research Institute Low noise amplifier
US20110063032A1 (en) * 2009-09-16 2011-03-17 Industrial Technology Research Institute Balun amplifier

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100708117B1 (ko) * 2004-11-11 2007-04-16 삼성전자주식회사 가변 이득 증폭기
US7729672B2 (en) 2006-03-22 2010-06-01 Qualcomm, Incorporated Dynamic bias control in power amplifier
US7420386B2 (en) 2006-04-06 2008-09-02 Altera Corporation Techniques for providing flexible on-chip termination control on integrated circuits
US7889008B2 (en) * 2009-06-08 2011-02-15 Mediatek Inc. Programmable gain MOS amplifier
US7952430B1 (en) * 2009-09-10 2011-05-31 Mediatek Singapore Pte. Ltd. Amplifier circuit, integrated circuit and radio frequency communication unit
US8577325B2 (en) 2010-08-31 2013-11-05 Korea Advanced Institute Of Science And Technology Low noise amplifier having both ultra-high linearity and low noise characteristic and radio receiver including the same
US8456237B2 (en) 2011-03-23 2013-06-04 Integrated Device Technology, Inc. Low noise variable gain amplifier utilizing variable feedback techniques with constant input/output impedance
KR101862708B1 (ko) * 2011-12-28 2018-05-31 삼성전자주식회사 무선송신기에서 구동증폭기 이득을 지수적으로 제어하기 위한 장치 및 방법
US8989688B2 (en) 2012-12-18 2015-03-24 Broadcom Corporation Low-noise TIA-to-ADC interface with a wide-range of passive gain control
US9184707B2 (en) 2013-01-17 2015-11-10 Qualcomm Incorporated Amplifier with switchable common gate gain buffer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008512058A (ja) * 2004-08-30 2008-04-17 ウィリンクス インコーポレイテッド 高周波無線受信機の回路および方法
JP2008211535A (ja) * 2007-02-27 2008-09-11 Sony Corp 増幅回路、受信機および受信機用ｉｃ
US20090108943A1 (en) * 2007-10-24 2009-04-30 Industrial Technology Research Institute Low noise amplifier
US20110063032A1 (en) * 2009-09-16 2011-03-17 Industrial Technology Research Institute Balun amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250141476A1 (en) * 2023-10-30 2025-05-01 Qualcomm Incorporated Controlling receiver gain for proactive jammer protection from transmit signal of integrated transmitter

Also Published As

Publication number Publication date
CN107005202A (zh) 2017-08-01
KR20170096111A (ko) 2017-08-23
US9407226B2 (en) 2016-08-02
EP3235123A1 (en) 2017-10-25
CN107005202B (zh) 2020-10-30
US20160182000A1 (en) 2016-06-23
BR112017012672A2 (pt) 2018-03-13
WO2016099754A1 (en) 2016-06-23

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