JP2018204061A - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
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- JP2018204061A JP2018204061A JP2017108369A JP2017108369A JP2018204061A JP 2018204061 A JP2018204061 A JP 2018204061A JP 2017108369 A JP2017108369 A JP 2017108369A JP 2017108369 A JP2017108369 A JP 2017108369A JP 2018204061 A JP2018204061 A JP 2018204061A
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- vacuum chamber
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- film formation
- sputtering apparatus
- sputtering
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 36
- 230000005855 radiation Effects 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 46
- 239000003463 adsorbent Substances 0.000 claims description 24
- 239000002245 particle Substances 0.000 abstract description 31
- 238000000151 deposition Methods 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 4
- 238000001179 sorption measurement Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 57
- 239000007789 gas Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Glass Compositions (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
【解決手段】カーボン製のターゲット2が設けられる真空チャンバ1と、真空チャンバを真空引きする真空ポンプVpと、真空チャンバ内で成膜対象物Wを保持するステージ4とを備え、真空ポンプにより真空チャンバ内を所定圧力に真空引きした後、ターゲットをスパッタリングすることで、成膜対象物表面にカーボン膜を成膜する本発明のスパッタリング装置SMは、表面が123K以下の温度に冷却される吸着体7を更に備え、吸着体が、成膜対象物に対する輻射が防止される真空チャンバ内の所定位置に配置される。
【選択図】図1
Description
Claims (3)
- カーボン製のターゲットが設けられる真空チャンバと、真空チャンバを真空引きする真空ポンプと、真空チャンバ内で成膜対象物を保持するステージとを備え、真空ポンプにより真空チャンバ内を所定圧力に真空引きした後、ターゲットをスパッタリングすることで、成膜対象物表面にカーボン膜を成膜するスパッタリング装置において、
表面が123K以下の温度に冷却される吸着体を更に備え、吸着体が、成膜対象物に対する輻射が防止される真空チャンバ内の所定位置に配置されることを特徴とするスパッタリング装置。 - 請求項1記載のスパッタリング装置であって、前記ターゲットと前記ステージとが対向配置されると共に両者を結ぶ延長線に対して直交する方向に局所的に膨出させた排気空間部を設け、排気空間部に開設した排気口に前記真空ポンプが接続され、真空チャンバの内壁面から隙間を存して設置されてターゲットとステージとの間の成膜空間を囲繞するシールド板を有するスパッタリング装置において、
前記吸着体がシールド板の外表面部分に隙間を存して設けられることを特徴とするスパッタリング装置。 - 前記シールド板の外表面部分を前記排気空間部の排気ガス流入口に対峙する範囲としたことを特徴とする請求項2記載のスパッタリング装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017108369A JP6871068B2 (ja) | 2017-05-31 | 2017-05-31 | スパッタリング装置 |
TW107108978A TWI778032B (zh) | 2017-05-31 | 2018-03-16 | 濺鍍裝置 |
CN201810521449.0A CN108977779B (zh) | 2017-05-31 | 2018-05-28 | 溅射装置 |
KR1020180062539A KR102471178B1 (ko) | 2017-05-31 | 2018-05-31 | 스퍼터링 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017108369A JP6871068B2 (ja) | 2017-05-31 | 2017-05-31 | スパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018204061A true JP2018204061A (ja) | 2018-12-27 |
JP6871068B2 JP6871068B2 (ja) | 2021-05-12 |
Family
ID=64542174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017108369A Active JP6871068B2 (ja) | 2017-05-31 | 2017-05-31 | スパッタリング装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6871068B2 (ja) |
KR (1) | KR102471178B1 (ja) |
CN (1) | CN108977779B (ja) |
TW (1) | TWI778032B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110578127A (zh) * | 2019-10-31 | 2019-12-17 | 浙江工业大学 | 一种提升磁控溅射镀膜沉积速率装置 |
CN110578127B (zh) * | 2019-10-31 | 2024-05-24 | 浙江工业大学 | 一种提升磁控溅射镀膜沉积速率装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673542A (ja) * | 1990-08-22 | 1994-03-15 | Anelva Corp | 真空処理装置 |
JP2001073115A (ja) * | 1999-09-02 | 2001-03-21 | Ulvac Japan Ltd | カーボンスパッタ装置 |
JP2004083984A (ja) * | 2002-08-26 | 2004-03-18 | Fujitsu Ltd | スパッタリング装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0798867A (ja) * | 1993-09-30 | 1995-04-11 | Kao Corp | 磁気記録媒体の製造装置 |
JP2000017437A (ja) * | 1998-07-01 | 2000-01-18 | Sony Corp | 成膜装置 |
JP4406188B2 (ja) * | 2002-06-12 | 2010-01-27 | キヤノンアネルバ株式会社 | 成膜装置 |
CN1266306C (zh) * | 2003-05-19 | 2006-07-26 | 力晶半导体股份有限公司 | 溅镀装置及其使用此装置的金属层/金属化合物层的制造方法 |
US20080257263A1 (en) * | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
KR101097738B1 (ko) * | 2009-10-09 | 2011-12-22 | 에스엔유 프리시젼 주식회사 | 기판 처리 장치 및 방법 |
JP6238060B2 (ja) | 2013-12-20 | 2017-11-29 | トヨタ自動車株式会社 | リチウムイオン二次電池 |
CN104928635B (zh) * | 2014-03-21 | 2017-12-19 | 北京北方华创微电子装备有限公司 | 磁控溅射腔室及磁控溅射设备 |
-
2017
- 2017-05-31 JP JP2017108369A patent/JP6871068B2/ja active Active
-
2018
- 2018-03-16 TW TW107108978A patent/TWI778032B/zh active
- 2018-05-28 CN CN201810521449.0A patent/CN108977779B/zh active Active
- 2018-05-31 KR KR1020180062539A patent/KR102471178B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673542A (ja) * | 1990-08-22 | 1994-03-15 | Anelva Corp | 真空処理装置 |
JP2001073115A (ja) * | 1999-09-02 | 2001-03-21 | Ulvac Japan Ltd | カーボンスパッタ装置 |
JP2004083984A (ja) * | 2002-08-26 | 2004-03-18 | Fujitsu Ltd | スパッタリング装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110578127A (zh) * | 2019-10-31 | 2019-12-17 | 浙江工业大学 | 一种提升磁控溅射镀膜沉积速率装置 |
CN110578127B (zh) * | 2019-10-31 | 2024-05-24 | 浙江工业大学 | 一种提升磁控溅射镀膜沉积速率装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6871068B2 (ja) | 2021-05-12 |
KR102471178B1 (ko) | 2022-11-25 |
KR20180131497A (ko) | 2018-12-10 |
CN108977779A (zh) | 2018-12-11 |
TWI778032B (zh) | 2022-09-21 |
CN108977779B (zh) | 2021-10-29 |
TW201903180A (zh) | 2019-01-16 |
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