JP2018197257A5 - - Google Patents

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JP2018197257A5
JP2018197257A5 JP2018153215A JP2018153215A JP2018197257A5 JP 2018197257 A5 JP2018197257 A5 JP 2018197257A5 JP 2018153215 A JP2018153215 A JP 2018153215A JP 2018153215 A JP2018153215 A JP 2018153215A JP 2018197257 A5 JP2018197257 A5 JP 2018197257A5
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JP2018153215A
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JP7077180B2 (ja
JP2018197257A (ja
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JP2018153215A 2016-09-29 2018-08-16 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物 Active JP7077180B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016191858 2016-09-29
JP2016191858 2016-09-29

Related Parent Applications (1)

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JP2018524857A Division JP6401426B2 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

Publications (3)

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JP2018197257A JP2018197257A (ja) 2018-12-13
JP2018197257A5 true JP2018197257A5 (cg-RX-API-DMAC7.html) 2020-09-10
JP7077180B2 JP7077180B2 (ja) 2022-05-30

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JP2018524857A Active JP6401426B2 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物
JP2018153215A Active JP7077180B2 (ja) 2016-09-29 2018-08-16 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

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JP2018524857A Active JP6401426B2 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

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US (2) US10934316B2 (cg-RX-API-DMAC7.html)
EP (1) EP3521296B1 (cg-RX-API-DMAC7.html)
JP (2) JP6401426B2 (cg-RX-API-DMAC7.html)
KR (1) KR102569148B1 (cg-RX-API-DMAC7.html)
CN (2) CN109715643B (cg-RX-API-DMAC7.html)
CA (1) CA3036035A1 (cg-RX-API-DMAC7.html)
TW (1) TW201827446A (cg-RX-API-DMAC7.html)
WO (1) WO2018061869A1 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
CN110312729B (zh) * 2017-03-03 2023-09-15 Sk化学株式会社 用于制备量子点的膦前体及由其制备的量子点
JP7522554B2 (ja) 2017-05-18 2024-07-25 エスケー ケミカルズ カンパニー リミテッド ホスフィン前駆体、ホスフィン前駆体の製造方法、量子ドット製造用前駆体組成物、量子ドットを製造する方法
WO2019188679A1 (ja) * 2018-03-27 2019-10-03 日本化学工業株式会社 InP量子ドットの製造方法
US11692134B2 (en) 2019-04-16 2023-07-04 Nippon Chemical Industrial Co., Ltd. Method for producing InP quantum dot precursor and method for producing InP-based quantum dot
JP7508217B2 (ja) * 2019-04-16 2024-07-01 日本化学工業株式会社 InP量子ドット前駆体の製造方法及びInP系量子ドットの製造方法
KR102286852B1 (ko) * 2019-04-24 2021-08-06 주식회사 제우스이엔피 실리콘질화막 식각액 조성물의 제조방법
US20250197431A1 (en) * 2023-12-15 2025-06-19 Asm Ip Holding B.V. Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2907785A (en) * 1957-10-07 1959-10-06 Du Pont Organic compounds of silicon and phosphorus and their preparation
DD274626A1 (de) * 1988-06-09 1989-12-27 Univ Halle Wittenberg Verfahren zur herstellung von organosilylphosphanen
KR100274626B1 (ko) 1997-12-26 2000-12-15 윤종용 원고비틀림보정장치및방법
JP2002313746A (ja) * 2001-04-18 2002-10-25 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
FR2986527B1 (fr) * 2012-02-02 2014-03-07 Ecole Polytechnique Dgar Procede de preparation de phosphines tertiaires et de derives de celles-ci.
KR102334258B1 (ko) * 2014-11-18 2021-12-03 에스케이케미칼 주식회사 트리스(트리알킬실릴)포스핀의 제조방법
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
KR102770560B1 (ko) * 2018-03-27 2025-02-19 니폰 가가쿠 고교 가부시키가이샤 실릴포스핀 화합물, 실릴포스핀 화합물의 제조 방법 및 InP 양자 도트의 제조 방법
US11692134B2 (en) * 2019-04-16 2023-07-04 Nippon Chemical Industrial Co., Ltd. Method for producing InP quantum dot precursor and method for producing InP-based quantum dot

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