CN109715643B - 硅烷基膦化合物的制造方法和硅烷基膦化合物 - Google Patents

硅烷基膦化合物的制造方法和硅烷基膦化合物 Download PDF

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Publication number
CN109715643B
CN109715643B CN201780056268.9A CN201780056268A CN109715643B CN 109715643 B CN109715643 B CN 109715643B CN 201780056268 A CN201780056268 A CN 201780056268A CN 109715643 B CN109715643 B CN 109715643B
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silylphosphine
silylphosphine compound
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phosphine
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CN109715643A (zh
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田久保洋介
田村健
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Nippon Chemical Industrial Co Ltd
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Nippon Chemical Industrial Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/06Phosphorus compounds without P—C bonds
    • C07F9/062Organo-phosphoranes without P-C bonds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/06Phosphorus compounds without P—C bonds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/08Other phosphides
    • C01B25/082Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087Other phosphides of boron, aluminium, gallium or indium of gallium or indium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Inorganic Chemistry (AREA)
CN201780056268.9A 2016-09-29 2017-09-19 硅烷基膦化合物的制造方法和硅烷基膦化合物 Active CN109715643B (zh)

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JP2016191858 2016-09-29
JP2016-191858 2016-09-29
PCT/JP2017/033724 WO2018061869A1 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

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US (2) US10934316B2 (cg-RX-API-DMAC7.html)
EP (1) EP3521296B1 (cg-RX-API-DMAC7.html)
JP (2) JP6401426B2 (cg-RX-API-DMAC7.html)
KR (1) KR102569148B1 (cg-RX-API-DMAC7.html)
CN (2) CN109715643B (cg-RX-API-DMAC7.html)
CA (1) CA3036035A1 (cg-RX-API-DMAC7.html)
TW (1) TW201827446A (cg-RX-API-DMAC7.html)
WO (1) WO2018061869A1 (cg-RX-API-DMAC7.html)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
CN110312729B (zh) * 2017-03-03 2023-09-15 Sk化学株式会社 用于制备量子点的膦前体及由其制备的量子点
JP7522554B2 (ja) 2017-05-18 2024-07-25 エスケー ケミカルズ カンパニー リミテッド ホスフィン前駆体、ホスフィン前駆体の製造方法、量子ドット製造用前駆体組成物、量子ドットを製造する方法
WO2019188679A1 (ja) * 2018-03-27 2019-10-03 日本化学工業株式会社 InP量子ドットの製造方法
US11692134B2 (en) 2019-04-16 2023-07-04 Nippon Chemical Industrial Co., Ltd. Method for producing InP quantum dot precursor and method for producing InP-based quantum dot
JP7508217B2 (ja) * 2019-04-16 2024-07-01 日本化学工業株式会社 InP量子ドット前駆体の製造方法及びInP系量子ドットの製造方法
KR102286852B1 (ko) * 2019-04-24 2021-08-06 주식회사 제우스이엔피 실리콘질화막 식각액 조성물의 제조방법
US20250197431A1 (en) * 2023-12-15 2025-06-19 Asm Ip Holding B.V. Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114311A1 (fr) * 2012-02-02 2013-08-08 Ecole Polytechnique Procede de preparation de phosphines tertiaires et de derives de celles-ci
WO2016080683A1 (ko) * 2014-11-18 2016-05-26 에스케이케미칼주식회사 트리스(트리알킬실릴)포스핀의 제조방법

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Publication number Priority date Publication date Assignee Title
US2907785A (en) * 1957-10-07 1959-10-06 Du Pont Organic compounds of silicon and phosphorus and their preparation
DD274626A1 (de) * 1988-06-09 1989-12-27 Univ Halle Wittenberg Verfahren zur herstellung von organosilylphosphanen
KR100274626B1 (ko) 1997-12-26 2000-12-15 윤종용 원고비틀림보정장치및방법
JP2002313746A (ja) * 2001-04-18 2002-10-25 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
KR102770560B1 (ko) * 2018-03-27 2025-02-19 니폰 가가쿠 고교 가부시키가이샤 실릴포스핀 화합물, 실릴포스핀 화합물의 제조 방법 및 InP 양자 도트의 제조 방법
US11692134B2 (en) * 2019-04-16 2023-07-04 Nippon Chemical Industrial Co., Ltd. Method for producing InP quantum dot precursor and method for producing InP-based quantum dot

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114311A1 (fr) * 2012-02-02 2013-08-08 Ecole Polytechnique Procede de preparation de phosphines tertiaires et de derives de celles-ci
WO2016080683A1 (ko) * 2014-11-18 2016-05-26 에스케이케미칼주식회사 트리스(트리알킬실릴)포스핀의 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Synthesis of a 1-Aryl-2,2-chlorosilyl(phospha)silene Coordinated by an N-Heterocyclic Carbene;Andreas Wolfgang Kyri等;《Molecules》;20160930;第1-10页 *

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JP7077180B2 (ja) 2022-05-30
US20210171551A1 (en) 2021-06-10
US11512103B2 (en) 2022-11-29
US20190263845A1 (en) 2019-08-29
EP3521296B1 (en) 2020-10-28
JP6401426B2 (ja) 2018-10-10
EP3521296A4 (en) 2019-08-28
US10934316B2 (en) 2021-03-02
KR20190059268A (ko) 2019-05-30
JPWO2018061869A1 (ja) 2018-09-27
CA3036035A1 (en) 2018-04-05
CN109715643A (zh) 2019-05-03
CN114957316A (zh) 2022-08-30
TW201827446A (zh) 2018-08-01
WO2018061869A1 (ja) 2018-04-05
JP2018197257A (ja) 2018-12-13
KR102569148B1 (ko) 2023-08-23
EP3521296A1 (en) 2019-08-07
CN114957316B (zh) 2025-02-07

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