JP2018195718A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2018195718A JP2018195718A JP2017098614A JP2017098614A JP2018195718A JP 2018195718 A JP2018195718 A JP 2018195718A JP 2017098614 A JP2017098614 A JP 2017098614A JP 2017098614 A JP2017098614 A JP 2017098614A JP 2018195718 A JP2018195718 A JP 2018195718A
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- film
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- insulating film
- element isolation
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Abstract
【解決手段】メモリセル領域1Aの半導体基板SBの一部であって、半導体基板SB上に突出する複数のフィンFA同士の間の溝D1内に埋め込まれた素子分離領域EI1を、溝D1の底面を覆う絶縁膜IF3と、絶縁膜IF3の上面を覆う窒化シリコン膜NFとにより構成する。
【選択図】図2
Description
以下に、図1〜図5を用いて、本実施の形態の半導体装置の構造を説明する。図1は、本実施の形態である半導体装置を示す平面図である。図2〜図4は、本実施の形態の半導体装置を示す断面図である。図5は、本実施の形態の半導体装置を構成するメモリセルを示す斜視図である。
次に、本実施の形態の半導体装置のうち、主に不揮発性メモリの動作について、図29を用いて説明する。図29は、スプリットゲート型のメモリセルの動作電圧を説明するための表である。
本実施の形態の半導体装置の製造方法について、図6〜図28を用いて説明する。図6〜図28は、本実施の形態の半導体装置の製造方法を説明する断面図である。図6〜図28では、図の左側から順位、メモリセル領域1A、ロジック領域1BおよびI/O領域1Cを順に示している。図6〜図17では、形成するフィンの短手方向、つまり、延在方向に対して直交するy方向(図1参照)における断面を示し、図18〜図28では、形成するフィンの延在方向であるx方向(図1参照)における断面を示している。
以下に、本実施の形態の半導体装置およびその製造方法の効果について、比較例を示した図30を用いて説明する。図30は、比較例の半導体装置を示す断面図であって、FINFETからなるメモリセルを含む断面図である。図30では、図の左側から順に、メモリセル領域1A、ロジック領域1BおよびI/O領域1Cのそれぞれにおける、フィンの短手方向に沿う断面を示している。
1B ロジック領域
1C I/O領域
CG 制御ゲート電極
D1〜D3 溝
EI1〜EI4 素子分離領域
FA、FB、FC フィン
G1、G2 ゲート電極
GI1〜GI3 ゲート絶縁膜
MC メモリセル
MG メモリゲート電極
ON ONO膜
Q1、Q2 トランジスタ
SB 半導体基板
Claims (12)
- 主面に沿って並ぶ第1領域および第2領域を有する半導体基板と、
前記第1領域の前記半導体基板の一部分であって、前記半導体基板の上面から突出し、前記半導体基板の前記主面に沿う第1方向に延在する複数の第1突出部と、
隣り合う前記第1突出部同士の間の第1溝内に埋め込まれた第1素子分離領域と、
前記第1突出部の上面上に第1絶縁膜を介して形成され、前記第1方向に直交する第2方向に延在する第1ゲート電極と、
前記第1突出部の前記上面上に電荷蓄積部を含む第2絶縁膜を介して形成され、前記第1ゲート電極と隣り合って前記第2方向に延在する第2ゲート電極と、
前記第1突出部の前記上面に形成された第1ソース・ドレイン領域と、
前記第2領域の前記半導体基板の一部分であって、前記半導体基板の前記上面から突出し、前記第1方向に延在する複数の第2突出部と、
隣り合う前記第2突出部同士の間の第2溝内に埋め込まれた第2素子分離領域と、
前記第2突出部の上面上に第3絶縁膜を介して形成され、前記第2方向に延在する第3ゲート電極、および、前記第2突出部の前記上面に形成された第2ソース・ドレイン領域を備えたトランジスタと、
を有し、
前記第1ゲート電極および前記第2ゲート電極は、前記第1素子分離領域の直上において延在しており、
前記第1ゲート電極、前記第2ゲート電極および前記第1ソース・ドレイン領域は、不揮発性記憶素子を構成し、
前記第1素子分離領域の上面は、窒化シリコン膜の上面により構成され、前記第2素子分離領域の上面は、第2酸化シリコン膜の上面により構成されている、半導体装置。 - 請求項1記載の半導体装置において、
前記第1素子分離領域は、
前記第1溝内に埋め込まれた第1酸化シリコン膜と、
前記第1酸化シリコン膜上に形成された前記窒化シリコン膜と、
を有する、半導体装置。 - 請求項1記載の半導体装置において、
前記第1素子分離領域は、前記第1突出部と前記窒化シリコン膜との間に形成された第3酸化シリコン膜をさらに有する、半導体装置。 - 請求項1記載の半導体装置において、
前記窒化シリコン膜の膜厚は、5〜15nmである、半導体装置。 - 請求項1記載の半導体装置において、
前記第1ゲート電極および前記第2ゲート電極を含むパターンの両側の側面のそれぞれを覆い、前記第2方向に延在する第4絶縁膜からなるサイドウォールをさらに有する、半導体装置。 - 請求項3記載の半導体装置において、
前記第1素子分離領域の前記上面の面積のうち、前記窒化シリコン膜の前記上面の面積は、前記第3酸化シリコン膜の上面の面積より大きい、半導体装置。 - (a)主面に沿って並ぶ第1領域および第2領域を有する半導体基板を準備する工程、
(b)前記第1領域の前記半導体基板の上面に第1溝を形成することで、前記半導体基板の一部分であって、前記半導体基板の前記上面から突出し、前記半導体基板の前記主面に沿う第1方向に延在する複数の第1突出部を形成し、前記第2領域の前記半導体基板の上面に第2溝を形成することで、前記半導体基板の一部分であって、前記半導体基板の前記上面から突出し、前記第1方向に延在する複数の第2突出部を形成する工程、
(c)前記第1溝内を埋め込む第1酸化シリコン膜と、前記第2溝内を埋め込む第2酸化シリコン膜とを形成する工程、
(d)前記第1酸化シリコン膜の上面を後退させる工程、
(e)前記(d)工程の後、前記第1酸化シリコン膜上に窒化シリコン膜を形成することで、前記第1溝内に、前記第1酸化シリコン膜および前記窒化シリコン膜を含む第1素子分離領域を形成する工程、
(f)前記第2酸化シリコン膜の上面を後退させることで、前記第2酸化シリコン膜からなる第2素子分離領域を形成する工程、
(g)前記第1突出部上に第1絶縁膜を介して形成され、前記第1突出部および前記第1素子分離領域のそれぞれの直上で前記第1方向に直交する第2方向に延在する第1ゲート電極を形成する工程、
(h)前記第1突出部上に電荷蓄積部を含む第2絶縁膜を介して形成され、前記第1突出部および前記第1素子分離領域のそれぞれの直上で、前記第1ゲート電極に隣り合って前記第2方向に延在する第2ゲート電極を形成する工程、
(i)前記第2突出部上に第3絶縁膜を介して形成され、前記第2方向に延在する第3ゲート電極を形成する工程、
(j)前記第1突出部の上面に第1ソース・ドレイン領域を形成する工程、
(k)前記第2突出部の上面に第2ソース・ドレイン領域を形成する工程、
を有し、
前記第1ゲート電極、前記第2ゲート電極および前記第1ソース・ドレイン領域は、不揮発性記憶素子を構成しており、
前記第3ゲート電極および前記第2ソース・ドレイン領域は、トランジスタを構成している、半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
(d1)前記(d)工程の後、前記(e)工程の前に、前記第1酸化シリコン膜上の前記第1突出部の表面を覆う第3酸化シリコン膜を形成する工程、
(e1)前記(e)工程の後、前記窒化シリコン膜上の前記第3酸化シリコン膜を除去することで、前記第1突出部の前記表面を露出させる工程、
をさらに有し、
前記第1突出部と前記窒化シリコン膜との間の前記第3酸化シリコン膜は、前記第1素子分離領域を構成している、半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記第1素子分離領域の前記上面の面積のうち、前記窒化シリコン膜の前記上面の面積は、前記第3酸化シリコン膜の上面の面積より大きい、半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記窒化シリコン膜の膜厚は、5〜15nmである、半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
(h1)前記(j)工程の前に、前記第1ゲート電極および前記第2ゲート電極を含むパターンの両側の側面のそれぞれを覆い、前記第1突出部および前記第1素子分離領域のそれぞれの直上で前記第2方向に延在する第4絶縁膜からなるサイドウォールを形成する工程をさらに有する、半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記(g)工程および前記(h)工程のそれぞれの直後には、前記窒化シリコン膜の上面は露出されている、半導体装置の製造方法。
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