JP2018160353A - Plasma processing device and plasma processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a plasma processing device capable of performing high-purity plasma processing while preventing impurities from being mixed into an object to be processed during the plasma processing.SOLUTION: A plasma processing device includes a plasma processing vessel (10, 20) having a discharge space (14, 24) at the inside thereof, and a pair of electrodes (13a and 15, 13a' and 15, 23 and 23, or 23' and 23'') facing to each other with the plasma processing vessel interposed therebetween, and subjects an object to be processed provided in the discharge space to plasma processing. In the plasma processing device, the discharge space is covered with the plasma processing vessel such that a pair of electrodes are not exposed in the discharge space.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method.

  Conventionally, as a plasma processing apparatus, a pair of electrodes are disposed on the outer surface of a plasma processing container and the plasma processing container, and plasma processing is performed by radiating plasma generated between these electrodes to an object to be processed ( Patent Document 1) is known. Also, an apparatus (Patent Document 2) is known in which a dielectric is interposed between a central electrode and a peripheral electrode that define a discharge space, and an object to be processed is introduced into the discharge space between the electrodes to perform plasma processing. It has been.

JP 2014-212839 A JP 2010-029830 A

  However, in a plasma processing apparatus such as that disclosed in Patent Document 1, if a processing object is disposed in a discharge space where plasma (discharge) is generated and plasma processing is performed, the discharge space into which the processing object is introduced and the discharge space Due to the contact with the electrode, impurities released from the electrode during the plasma processing are mixed into the object to be processed, and the high-purity plasma processing cannot be performed. That is, the electrode at the time of plasma generation is exposed to plasma or heated by resistance due to energization or plasma temperature, thereby releasing impurities. In addition, the electrode is made of a material that easily reacts to the object to be processed and discharge gas (plasma gas for processing), or a gas containing a gas (reaction gas) that easily reacts with the electrode (reaction gas) (hereinafter simply referred to as discharge) Gas), the electrode easily reacts with the object to be processed and the discharge gas (reactive gas), and impurities are easily generated, and the purity is lowered by mixing these impurities with the object to be processed. In addition, the apparatus of Patent Document 2 has a complicated structure, and a small plasma processing apparatus cannot be provided. Furthermore, in such an apparatus, it is likely that the object to be processed is unevenly arranged in the discharge space, and the state (for example, pressure, concentration, flow rate) of the discharge gas in the discharge space is not uniform. . For this reason, the plasma generation start voltage (discharge start voltage), which is a voltage necessary for dielectric breakdown, becomes unstable, and there is a risk that plasma generation, that is, plasma processing, becomes unstable.

  It is an object of the present invention to provide a plasma processing apparatus and a plasma processing method capable of performing high-purity plasma processing without impurities being mixed into an object to be processed during plasma processing.

  The plasma processing apparatus of the present invention includes a plasma processing container having a discharge space therein and a pair of electrodes facing each other with the plasma processing container interposed therebetween, and plasma processing is performed on an object to be processed provided in the discharge space. In the plasma processing apparatus, the discharge space is covered with the plasma processing container so that the pair of electrodes are not exposed to the discharge space.

  The plasma processing container has at least one opening, and it is practical that the object to be processed is disposed in the discharge space from the opening.

  The plasma processing container includes an inner dielectric covering the inside of the discharge space and an outer dielectric covering the outside of the discharge space. The inner dielectric and the outer dielectric are integrated with the plasma processing container. It can be thermoformed.

  It is practical that the inner dielectric and the outer dielectric are integrally formed at one end of the outer dielectric.

  The electric field strength between the pair of electrodes may be non-uniform along the circumferential direction of the plasma processing container.

  One electrode of the pair of electrodes is embedded in the inner dielectric, and the thickness of the inner dielectric may be non-uniform along the circumferential direction of the plasma processing vessel.

  The electrode embedded in the inner dielectric is a strip electrode, and the inner dielectric may have the smallest thickness on the outer side in the width direction of the strip electrode.

  The thickness of at least one of the edges in the width direction of the strip electrode may be smaller than the thickness of the central portion of the strip electrode.

  The band-shaped electrode may have a knife edge shape at both edges in the width direction.

  In the plasma processing container, at least one electrode of the pair of electrodes may be embedded.

  The object to be processed can be supplied into the discharge space together with the discharge gas from the same opening as the opening disposed in the discharge space or a different opening.

  The plasma processing method of the present invention uses the above-described plasma processing apparatus to introduce an object to be processed into the plasma processing vessel from the opening, and discharge from the same opening or a different opening. Supplying a working gas, applying a voltage between the pair of electrodes to generate plasma in the plasma processing vessel to plasma the object to be processed, and stopping the voltage application between the pair of electrodes And a step of taking out the object to be processed from any one of the openings or different openings.

  According to the present invention, in a plasma processing apparatus for performing plasma processing on an object to be processed in a plasma processing container, there is a possibility that impurities accompanying the plasma processing may be generated by preventing the electrodes from being exposed in the discharge space where the plasma processing is performed. In addition, plasma treatment can be performed without impurities being mixed into the object to be processed. In addition, by making the electric field strength in the discharge space nonuniform along the circumferential direction of the plasma processing vessel, the discharge space has a portion where the electric field strength is locally high, and plasma (discharge) can be generated even at a low voltage. it can. For this reason, it is possible to reliably plasma-treat the workpiece.

1 is a longitudinal sectional view showing a first embodiment of an atmospheric pressure plasma processing apparatus according to the present invention. It is sectional drawing which follows the II-II line | wire of FIG. It is sectional drawing corresponding to FIG. 2 which shows the modification of the 1st Embodiment of this invention. It is a longitudinal cross-sectional view which shows 2nd Embodiment of the atmospheric pressure plasma processing apparatus by this invention. It is sectional drawing which follows the VV line of FIG. It is sectional drawing corresponding to FIG. 5 which shows the modification of the 2nd Embodiment of this invention.

  Hereinafter, an embodiment of an atmospheric pressure plasma processing apparatus 100 according to the present invention will be described with reference to the drawings. 1 and 2 show a first embodiment of an atmospheric pressure plasma processing apparatus according to the present invention. As shown in FIGS. 1 and 2, the atmospheric pressure plasma processing apparatus 100 includes a plasma processing vessel 10 (discharge vessel). The plasma processing vessel 10 is made of a dielectric (for example, quartz), and is formed in a cylindrical shape having a perfect cross section in the illustrated example. An opening 11 is formed at one end of the plasma processing container 10 in the axial direction toward the radial direction of the plasma processing container 10, and an opening 12 is formed at the other end in the axial direction of the plasma processing container 10. Has been. The opening 11 is formed in the tube wall 10 a of the plasma processing container 10 and communicates with a connecting tube 11 a extending in the radial direction of the plasma processing container 10. One end of the tube wall 10a is closed by an end wall 10b integral with the tube wall 10a.

  On the other hand, inside the plasma processing vessel 10, an inner electrode 13 a that is one electrode of a pair of electrodes along the axis of the plasma processing vessel 10 and an inner tube (inner dielectric) in which the inner electrode 13 a is embedded (coated). Body) 13b. The inner tube 13b in which the inner electrode 13a is embedded is made of a dielectric (for example, quartz), and is formed by melting and softening (heating welding) with the inner electrode 13a inserted in a tubular dielectric. . Further, the inner tube 13 b is integrated with the plasma processing container 10 by heat welding (heat forming) on the end wall 10 b on the opening 11 side of the plasma processing container 10, and constitutes a part of the plasma processing container 10. . A cylindrical space between the inner tube (inner dielectric) 13b and the plasma processing vessel 10 (tube wall 10a and outer dielectric) constitutes a discharge space (plasma processing space). The tube wall 10a may be an outer dielectric.

  In the illustrated embodiment, as shown in FIG. 2, the inner electrode 13a has a strip shape (foil shape, plate shape) having a uniform cross section in the longitudinal direction (the axial direction of the plasma processing vessel 10 and the flow direction of the discharge gas in the vessel). The thickness of the central portion 13a1 in the width direction is thicker than the thickness of both edge portions 13a2, and sharpens toward both edge portions 13a2 (both end portions along the width direction). Its thickness is thinner than that of the central portion 13a1, and both edge portions 13a2 have a sharp and sharp knife edge shape. The radial thickness of the plasma processing vessel 10 of the inner tube 13b in which the inner electrode 13a is embedded is nonuniform along the circumferential direction, and the width direction (both edges 13a2 along the width direction) of the embedded inner electrode 13a. The thickness d on the outer side in the direction in which is extended is the smallest.

  On the other hand, an outer electrode 15 serving as the other electrode of the pair of electrodes is disposed on the outer peripheral surface of the plasma processing vessel 10 (tube wall 10a). In the illustrated embodiment, the outer electrode 15 is depicted as a metal film-like (foil-like) electrode, but may be a metal wire wound spirally. The axial length of the outer electrode 15 and the inner electrode 13a facing each other corresponds to the discharge space 14.

  The inner electrode 13a and the outer electrode 15 described above are a pair of electrodes facing each other through the inner tube 13b, the discharge space 14, and the tube wall 10a of the plasma processing vessel 10, and are electrically connected to a power supply unit (not shown). . The inner electrode 13a is a high-voltage side electrode, and the outer electrode 15 is a ground-side electrode.

  An example of a procedure for plasma processing an object to be processed using the atmospheric pressure plasma processing apparatus 100 having the above configuration will be described.

"Introduction of workpiece S"
An object to be processed S (schematically shown in FIGS. 1 to 6) is introduced into the discharge space 14 from one of the pair of openings 11 and 12 (for example, the opening 11) of the plasma processing container 10. The workpiece S may be any of gas, solid, and liquid.

"Supply gas for discharge"
A discharge gas is supplied from one of the pair of openings 11 and 12 (for example, the opening 11) along the flow path in the discharge space 14 of the plasma processing container 10, and along the flow path in the discharge space 14. To flow the discharge gas. The discharge gas flowing in the discharge space 14 is discharged from the other opening (for example, the opening 12) of the plasma processing container 10. The discharge gas is not limited to a highly reactive gas such as oxygen, but may be an inert gas such as helium, argon or nitrogen, or a mixed gas of a highly reactive gas and an inert gas. As described above, the discharge gas may be allowed to flow in a state where the object to be processed S is disposed in the discharge space 14 in advance, but the object to be processed is installed (mixed) in the discharge space 14 while the discharge gas is flowing. Alternatively, it may flow through the discharge space 14 as a discharge gas mixed with the workpiece S.

"Plasma generation and plasma processing"
When a high voltage necessary for the start of discharge (dielectric breakdown) is applied between the inner electrode 13 a and the outer electrode 15 by the power supply unit, the inner space between the inner electrode 13 a and the outer electrode 15 in the discharge space 14 of the plasma processing vessel 10. Thus, dielectric breakdown from the vicinity of both edge portions 13a2 where the electric field strength is high starts, and plasma (discharge) is generated in the entire discharge space 14. Plasma treatment such as surface modification is performed on the workpiece S in the discharge space 14 by this plasma. The fact that the electric field intensity in the vicinity of both edge portions 13a2 is locally high will be described below. The thickness of the inner electrode 13a is reduced from the central portion 13a1 in the width direction toward both edge portions 13a2, and the both edge portions 13a2 have a sharp knife edge shape. Electric field concentration is likely to occur. As a result, the electric field strength in the discharge space 14 along the width direction of the inner electrode 13a (the region where the discharge distance is shortest between the both edges 13a2 and the outer electrode 15) is locally increased.

  In addition, in the illustrated embodiment, the thickness of the inner tube 13b covering the inner electrode 13a is not uniform in the circumferential direction, and the thickness is minimized at both edges 13a2 (knife edge-shaped tips) of the inner electrode 13a. ing. It is known that the electric field strength becomes higher as the thickness of the dielectric becomes thinner. Therefore, in the discharge space 14, the plasma (in the at least one of the two spaces X in the width direction of the inner electrode 13 a is surely plasma ( Discharge) can be generated.

  In other words, from the viewpoint of making the distance between the pair of electrodes non-uniform along the circumferential direction of the plasma processing vessel (discharge tube), either one of the two edge portions 13a2 of the inner electrode 13a is made larger than the thickness of the central portion. Also, the inner electrode 13a has a non-uniform width along the circumferential direction of the plasma processing container, or the thickness of the dielectric between the pair of electrodes is reduced around the circumference of the plasma processing container. From the viewpoint of non-uniformity along the direction, the inner tube 13b is provided with a thin portion (thin wall portion) so that the thickness (outer diameter) of the inner tube 13b is increased along the circumferential direction of the plasma processing vessel. By making it non-uniform, the electric field strength in the plasma processing chamber can be locally increased, and the electric field strength becomes non-uniform along the circumferential direction of the plasma processing chamber. By applying at least one of these methods, plasma can be generated even at a relatively low discharge start voltage.

  When the workpiece S is present in the discharge space 14, the discharge start voltage is affected. In particular, when the object to be processed S is arranged in the discharge space 14, the discharge start voltage becomes unstable. Further, the discharge start voltage becomes unstable even when the state (for example, pressure, concentration, flow rate) of the discharge gas in the discharge space becomes non-uniform. However, as in the present embodiment, by locally generating a portion having a high electric field strength in the discharge space 14, plasma (discharge) can be generated even at a low voltage, and the arrangement of the workpiece S Regardless of the state of the discharge gas or the discharge gas, it is possible to reliably plasma-treat the workpiece S. In addition, by providing the thin wall portion of the inner tube 13b outside the both edge portions 13a2 having a knife edge shape, the electric field strength in the plasma processing vessel can be locally increased by a synergistic effect, and the discharge space 14 can be increased. Even when the unevenness of the workpiece S is large, the plasma treatment can be reliably performed without increasing the discharge start voltage.

"End of plasma treatment and removal of workpiece"
The power supply between the inner electrode 13a and the outer electrode 15 and the supply of the discharge gas into the discharge space 14 are stopped, and the plasma processing container 10 is opened from one opening (for example, the opening 12) of the plasma processing container 10. The workpiece S subjected to plasma treatment in 10 is taken out. In addition, you may make it the to-be-processed object S discharge | released out of the plasma processing container 10 with the gas for discharge.

  In the above plasma processing apparatus, the inner electrode 13 a and the outer electrode 15 are covered with the inner tube (inner dielectric) 13 b and the plasma processing container 10, and neither is exposed to the discharge space 14. For this reason, impurities (for example, impure gas discharged from the electrode or a reaction product between the object to be processed and the electrode) generated from the electrode member or the like are mixed into the object to be processed S and the discharge gas in the discharge space 14. There is nothing.

  Furthermore, in the above first embodiment, since the inner electrode 13a is embedded in the inner tube 13b, the inner electrode 13a is not damaged during plasma discharge. That is, the inner electrode 13a in the plasma processing vessel 10 is covered with the inner tube (dielectric) 13b, so that the discharge gas (the highly reactive gas contained in the discharge gas) and the inner electrode 13a do not come into contact with each other. The inner electrode 13a is not deteriorated by the discharge gas. Furthermore, the inner tube (inner dielectric) 13b that covers the inner electrode 13a and the plasma processing container 10 are integrally configured, so that the deterioration of the electrode can be prevented more reliably and the contamination of impurities can be prevented. In addition, since both edge portions 13a2 in the width direction of the strip-shaped inner electrode 13a have a knife edge shape, no gap is generated between the inner tube 13b and the inner edge 13a2. Accordingly, it is possible to prevent oxygen (atmosphere) entering the gap from reacting (oxidizing) with the inner electrode 13a and deteriorating the inner electrode 13a.

  FIG. 3 shows a modification of the first embodiment. The inner electrode 13a ′ has a circular cross section, and the inner tube 13b ′ has an elliptical (oval) cross section. Is uneven in the circumferential direction. Also in this modification, the thickness of the inner tube 13b ′, which is a dielectric, becomes non-uniform along the circumferential direction of the plasma processing vessel 10, and the thickness of the inner tube 13b ′ is the smallest in the discharge space 14. The electric field strength in the space X in the vicinity of the inner electrode 13a ′ in contact with the portion can be locally increased. Since the inner electrode 13a 'is embedded in the inner tube 13b', the inner electrode 13a 'is not damaged and plasma can be reliably generated over a long period of time. Further, impurities generated from the electrode member or the like (for example, an impure gas released from the electrode or a reaction product between the object to be processed and the electrode) are processed into the object to be processed S and the discharge gas disposed in the discharge space 14 There is no mixing.

  4 and 5 show a second embodiment of the atmospheric pressure plasma processing apparatus according to the present invention. The second embodiment is different from the first embodiment in the arrangement of the pair of electrodes and the arrangement of the openings. The plasma processing container 20 includes a cylindrical tube wall 20a made of a dielectric material (for example, quartz), an end wall 20b that closes one end of the plasma processing container 20, and a tube wall substantially at the center of the end wall 20b. An opening 21 is formed coaxially with 20a, and an opening 22 is formed coaxially with the tube wall 20a at the other end of the tube wall 20a. A connecting pipe 21 a communicating with the opening 21 is integrally formed on the outer surface of the end wall 20 b and constitutes a part of the plasma processing vessel 20. The cylindrical space in the tube wall 20a constitutes a discharge space (plasma processing space) 24.

  In this embodiment, as shown in FIG. 5, the pair of electrodes 23 are band-shaped electrodes formed in a band shape (plate shape) with a uniform cross section along the axial direction of the plasma processing container 10. It is embedded in the tube wall 20a of the plasma processing container 20 so as to face each other via the discharge space 24. The pair of electrodes 23 are symmetrical with respect to the axis of symmetry passing through the central axis of the plasma processing chamber 20, are bent at a curvature corresponding to the curvature of the tube wall 20 a of the plasma processing chamber 20, and Along the circumferential direction, the central portion 231 is thickest, and has a knife edge shape in which the thickness is gradually reduced toward both edge portions 232 to become thin. The pair of electrodes 23 are electrically connected to the power supply device by a power supply member 23a connected to one end in the longitudinal direction.

  As a method of embedding the pair of electrodes 23 in the tube wall 20a of the plasma processing vessel 20 by thermoforming, a state in which the pair of electrodes 23 is inserted between a small diameter tube (quartz tube) and a large diameter tube (quartz tube). In the manufacturing method, the air between the small diameter pipe and the large diameter pipe is sucked, and the small diameter pipe and the large diameter pipe are integrated by heating and welding.

  In the atmospheric pressure plasma processing apparatus 100 described above, both edge portions 232 of the pair of electrodes 23 of the plasma processing container 20 have a sharp knife edge shape, and the discharge space 24 and the cylindrical wall surface (dielectric) of the plasma processing container 20. Body). For this reason, in the radial cross section of the plasma processing container 20, the distance between the pair of electrodes 23 and the thickness of the dielectric are not uniform along the symmetry axis of the pair of electrodes 23 (the radial direction of the plasma processing container). Therefore, the electric field strength in the discharge space 24 locally increases in the vicinity of both edge portions 232 of the pair of electrodes 23 and becomes non-uniform along the circumferential direction of the plasma processing container 20.

  Therefore, as in the first embodiment, when a high voltage necessary for the start of discharge (dielectric breakdown) is applied between the pair of electrodes 23 by the power supply unit, dielectric breakdown in the vicinity of both edge portions 232 in the plasma processing vessel 20 is performed. As a starting point, plasma is generated in the entire discharge space 24, and plasma processing is performed on the workpiece S introduced into the discharge space 24 from one of the pair of openings 21 and 22. At this time, impurities generated from the electrode member or the like (for example, impure gas released from the electrode or a reaction product between the object to be processed and the electrode) are not mixed into the object to be processed S.

  In the present embodiment, the belt-like electrode 23 is embedded in the tube wall 20a of the plasma processing container 20, and is not exposed on the outer surface of the tube wall 20a. Therefore, creeping discharge does not occur on the outer surface of the tube wall 20a of the plasma processing vessel 20, so that the generation of plasma in the discharge space 24 is not hindered by the creeping discharge and a high voltage is applied to the electrode 23. However, it is possible to provide a safe plasma processing apparatus that is not exposed to the outer surface of the plasma processing container 20.

  FIG. 6 shows a modification of the second embodiment. In this modification, of the pair of electrodes of the second embodiment, the electrode 23 ″ is embedded in the tube wall 20a of the plasma processing vessel 20, and the electrode 23 ′ is arranged along the outer surface of the tube wall 20a. It is set. The pair of electrodes 23 ′ and 23 ″ of this modification form a symmetrical shape with the symmetry axis as the center, and the thickness of the central portions 231 ′ and 231 ″ is the largest along the circumferential direction. It has a knife edge shape that gradually decreases in thickness toward both edges 232 ′, 232 ″ in the circumferential direction. Therefore, also in this modification, in the radial cross section of the plasma processing container 20, the distance between the pair of electrodes 23 ′ and 23 ″ and the thickness of the dielectric are the symmetry axes of the pair of electrodes 23 ′ and 23 ″ ( The electric field strength between the pair of electrodes 23 ′ and 23 ″ is locally high in the vicinity of both edges 232 ′ and 232 ″. It becomes non-uniform along the circumferential direction of the plasma processing container 20. Similarly to the first embodiment, when a high voltage necessary for the start of discharge (dielectric breakdown) is applied between the pair of electrodes 23 ′ and 23 ″ by the power supply unit, both edge portions 232 ′ in the plasma processing container 20 are applied. Then, plasma is generated in the entire discharge space 24 starting from dielectric breakdown in the vicinity of 232 ″, and the workpiece S is subjected to plasma processing. At this time, impurities generated from the electrode member or the like (for example, impure gas discharged from the electrode, or the object to be processed and the electrode, are introduced into the object to be processed S introduced into the discharge space 24 from one of the openings 21 and 22. Reaction product) is not mixed. Also in this modified example, since one electrode 23 ″ is embedded in the tube wall 20a of the plasma processing vessel 20 and is not exposed on the outer surface of the tube wall 20a, creeping discharge may occur on the outer surface of the tube wall 20a. Absent. This provides a safe plasma processing apparatus in which plasma generation in the discharge space 24 is not hindered by creeping discharge, and the electrode 23 ″ to which a high voltage is applied is not exposed to the outer surface of the plasma processing container 20. it can.

  In the above embodiment, one and the other of the pair of openings 11 (21) and 12 (22) formed in the plasma processing vessel 10 (20) are respectively connected to the supply port and the discharge port of the workpiece S, or the discharge gas. Although the inlet and the outlet are used, these may be provided separately. For example, you may provide independently for the to-be-processed object S and discharge gas, respectively.

10 Plasma processing vessel (discharge vessel, discharge tube)
10a Tube wall (outer dielectric)
10b end wall 11 opening 11a connecting pipe 12 opening 13a, 13a ′ inner electrode (one electrode, strip electrode)
13a1 center part 13a2 edge (both edges)
13b, 13b 'inner tube (inner dielectric)
14 Discharge space (plasma treatment space)
15 Outer electrode (the other electrode, strip electrode)
20 Plasma processing vessel (discharge vessel, discharge tube)
20a pipe wall 20b end wall 21 opening 22 opening 23, 23 ', 23''electrode (band electrode)
231, 231 ′, 231 ″ center 232, 232 ′, 232 ″ edge (both edges)
24 Discharge space (plasma treatment space)
100 atmospheric pressure plasma processing equipment

Claims (12)

In a plasma processing apparatus having a plasma processing container having a discharge space therein and a pair of electrodes facing each other with the plasma processing container interposed therebetween, and plasma-treating an object to be processed provided in the discharge space,
The plasma processing apparatus, wherein the discharge space is covered with the plasma processing vessel so that the pair of electrodes are not exposed to the discharge space.   2. The plasma processing apparatus according to claim 1, wherein the plasma processing container has at least one opening, and the workpiece is disposed in the discharge space from the opening.   3. The plasma processing apparatus according to claim 1, wherein the plasma processing container includes an inner dielectric covering the inside of the discharge space and an outer dielectric covering the outside of the discharge space, and the inner dielectric. And a plasma processing apparatus in which the outer dielectric is thermoformed integrally with the plasma processing vessel.   4. The plasma processing apparatus according to claim 3, wherein the inner dielectric and the outer dielectric are integrated at one end of the outer dielectric.   5. The plasma processing apparatus according to claim 3, wherein an electric field strength between the pair of electrodes is not uniform along a circumferential direction of the plasma processing container.   6. The plasma processing apparatus according to claim 3, wherein one of the pair of electrodes is embedded in the inner dielectric, and the thickness of the inner dielectric is determined by the plasma processing container. A plasma processing apparatus that is non-uniform along the circumferential direction.   7. The plasma processing apparatus according to claim 3, wherein the electrode embedded in the inner dielectric is a strip electrode, and the thickness of the inner dielectric is formed on the outer side in the width direction of the strip electrode. The thinnest plasma processing equipment.   8. The plasma processing apparatus according to claim 7, wherein the thickness of at least one of both edges in the width direction of the strip electrode is thinner than the thickness of the central portion of the strip electrode.   9. The plasma processing apparatus according to claim 7, wherein both edge portions in the width direction of the belt-like electrode have a knife edge shape.   The plasma processing apparatus according to claim 1, wherein at least one of the pair of electrodes is embedded in the plasma processing container.   3. The plasma processing apparatus according to claim 2, wherein the object to be processed is supplied into the discharge space together with a discharge gas from the same opening or a different opening as the opening disposed in the discharge space. . A plasma processing method using the plasma processing apparatus according to any one of claims 1 to 11,
Introducing the object to be processed into the plasma processing container from the opening;
Supplying a discharge gas from the same opening as the opening or from a different opening;
Applying a voltage between the pair of electrodes to generate plasma in the plasma processing vessel to plasma-treat the object to be processed;
A plasma processing method comprising: stopping voltage application between the pair of electrodes; and taking out the object to be processed from any one of the openings or different openings.

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