JP2018160337A - 表示装置及びその製造方法 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29123—Magnesium [Mg] as principal constituent
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Abstract
Description
Claims (15)
- 電極と、
前記電極上に形成された発光層と、
前記発光層上に形成された、第1の金属元素を含む金属含有膜と、
を備え、
前記金属含有膜は、
前記金属含有膜の前記発光層側の界面を形成する、前記第1の金属元素単体、又は前記第1の金属元素と第2の金属元素との合金で形成された導電性を有する導電金属層と、
前記金属含有膜の前記発光層側の界面とは逆側の界面を形成する、前記第1の金属元素の酸化物で形成された透光性を有する透光酸化層と、
を含む、
表示装置。 - 電極と、
前記電極上に形成された発光層と、
前記発光層上に形成された、マグネシウム(Mg)を含むMg含有膜と、
を備え、
前記Mg含有膜は、
前記Mg含有膜の前記発光層側の界面を形成する、マグネシウム銀合金(MgAg)で形成された導電金属層と、
前記Mg含有膜の前記発光層側の界面とは逆側の界面を形成する、酸化マグネシウム(MgO)で形成された透光酸化層と、
を含む、
表示装置。 - 前記Mg含有膜は、前記導電金属層と前記透光酸化層との間に、マグネシウム(Mg)単体で形成されたMg単体層をさらに含む、
請求項2に記載の表示装置。 - 前記Mg含有膜は、前記導電金属層と前記透光酸化層との間に、酸化マグネシウム(MgO)と銀(Ag)単体とを含む混在層をさらに含む、
請求項2に記載の表示装置。 - 前記Mg含有膜上に形成された、無機絶縁材料で形成された封止膜をさらに備える、
請求項2に記載の表示装置。 - 前記Mg含有層において、前記導電金属層との界面側での銀(Ag)の濃度は、前記透光酸化層との界面側での銀(Ag)の濃度よりも高い、
請求項2に記載の表示装置。 - 前記Mg含有層において、前記導電金属層との界面側と前記透光酸化層との界面側との間で、銀(Ag)の濃度が連続的に変化する、
請求項2に記載の表示装置。 - 発光層上に、第1の金属元素を含む金属含有膜であって、前記金属含有膜の前記発光層側の界面を形成する、前記第1の金属元素単体、又は前記第1の金属元素と第2の金属元素との合金で形成された導電性を有する導電金属層と、前記金属含有膜の前記発光層側の界面とは逆側の界面を形成する、前記第1の金属元素単体で形成された金属単体層と、を含む金属含有膜を形成し、
前記金属含有膜の前記逆側の界面に露出する前記金属単体層を酸化させる、
表示装置の製造方法。 - 発光層上に、マグネシウム(Mg)を含むMg含有膜であって、前記Mg含有膜の前記発光層側の界面を形成する、マグネシウム銀合金(MgAg)で形成された導電金属層と、前記Mg含有膜の前記発光層側の界面とは逆側の界面を形成する、マグネシウム(Mg)で形成されたMg単体層と、を含むMg含有膜を形成し、
前記Mg含有膜の前記逆側の界面を酸化させる、
表示装置の製造方法。 - 前記Mg含有膜の形成は、マグネシウム(Mg)と銀(Ag)とを供給して前記導電金属層を形成し、その後、マグネシウム(Mg)の供給を継続し、銀(Ag)の供給を停止して前記Mg単体層を形成することを含む、
請求項9に記載の表示装置の製造方法。 - 前記Mg単体層の形成は、マグネシウム(Mg)の供給を継続し、銀(Ag)の供給を漸減した後に停止することを含む、
請求項10に記載の表示装置の製造方法。 - 前記Mg含有膜の前記逆側の界面の酸化は、前記Mg含有膜の前記逆側の界面に酸素プラズマ処理を施すことを含む、
請求項9に記載の表示装置の製造方法。 - 前記Mg含有膜の前記逆側の界面を酸化させた後、前記Mg含有膜上に無機絶縁材料で形成された封止膜を形成する、
請求項9に記載の表示装置の製造方法。 - 前記Mg含有層において、前記導電金属層との界面側での銀(Ag)の濃度は、前記透光酸化層との界面側での銀(Ag)の濃度よりも高い、
請求項9に記載の表示装置の製造方法。 - 前記Mg含有層において、前記導電金属層との界面側と前記透光酸化層との界面側との間で、銀(Ag)の濃度が連続的に変化する、
請求項9に記載の表示装置の製造方法。
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US15/924,452 US10879492B2 (en) | 2017-03-22 | 2018-03-19 | Display device and manufacturing method thereof |
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US6121727A (en) * | 1997-04-04 | 2000-09-19 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
JP3865996B2 (ja) * | 1999-04-07 | 2007-01-10 | 富士フイルムホールディングス株式会社 | 特定のシラン化合物及びそれらからなる発光素子材料、及び、それを含有する発光素子。 |
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