JP2018159952A5 - VA liquid crystal display device - Google Patents

VA liquid crystal display device Download PDF

Info

Publication number
JP2018159952A5
JP2018159952A5 JP2018119039A JP2018119039A JP2018159952A5 JP 2018159952 A5 JP2018159952 A5 JP 2018159952A5 JP 2018119039 A JP2018119039 A JP 2018119039A JP 2018119039 A JP2018119039 A JP 2018119039A JP 2018159952 A5 JP2018159952 A5 JP 2018159952A5
Authority
JP
Japan
Prior art keywords
electrode
insulating layer
liquid crystal
signal line
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2018119039A
Other languages
Japanese (ja)
Other versions
JP2018159952A (en
Filing date
Publication date
Application filed filed Critical
Publication of JP2018159952A publication Critical patent/JP2018159952A/en
Publication of JP2018159952A5 publication Critical patent/JP2018159952A5/en
Withdrawn legal-status Critical Current

Links

Claims (2)

基板上に、走査線と、前記走査線上の第1の絶縁層と、前記第1の絶縁層上の半導体層と、前記半導体層上のソース電極及びドレイン電極と、を有するトランジスタを有し、
前記トランジスタ上に第2の絶縁層を介して位置する画素電極を有し、
前記画素電極上に液晶層を介して位置する対向電極を有し、
前記画素電極は、前記第2の絶縁層が有する開口部を介して、前記ソース電極又は前記ドレイン電極の一方と接し、
前記ソース電極又は前記ドレイン電極の一方は、前記基板と前記第1の絶縁層との間に設けられた容量線と重なる領域を有し、
前記容量線は、前記走査線と平行にのびる領域を有し、
前記画素電極は、前記容量線と重なる領域を有し、
前記ソース電極又は前記ドレイン電極の他方は、信号線として機能し、
上面視において、前記トランジスタは前記信号線の一方の側に設けられ、
上面視において、前記半導体層は、前記信号線の一方の側に位置する領域と、前記信号線と重なる領域と、前記信号線の他方の側に位置する領域とを有するVA方式の液晶表示装置。
A substrate having a scan line, a first insulating layer on the scan line, a semiconductor layer on the first insulating layer, and a source electrode and a drain electrode on the semiconductor layer;
A pixel electrode positioned on the transistor via a second insulating layer;
A counter electrode positioned on the pixel electrode via a liquid crystal layer;
The pixel electrode is in contact with one of the source electrode and the drain electrode through an opening of the second insulating layer;
One of the source electrode or the drain electrode has a region overlapping a capacitor line provided between the substrate and the first insulating layer,
The capacitor line has a region extending in parallel with the scan line,
The pixel electrode has a region overlapping with the capacitor line,
The other of the source electrode or the drain electrode functions as a signal line,
In top view, the transistor is provided on one side of the signal line,
When viewed from above, the semiconductor layer has a region located on one side of the signal line, a region overlapping the signal line, and a region located on the other side of the signal line. .
請求項1において、In claim 1,
前記半導体層はシリコンを有するVA方式の液晶表示装置。The semiconductor layer is a VA liquid crystal display device including silicon.
JP2018119039A 2007-07-26 2018-06-22 Liquid crystal display device Withdrawn JP2018159952A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007195252 2007-07-26
JP2007195252 2007-07-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2017140161A Division JP2017223965A (en) 2007-07-26 2017-07-19 Liquid crystal display device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020163604A Division JP6829791B1 (en) 2007-07-26 2020-09-29 Liquid crystal display device

Publications (2)

Publication Number Publication Date
JP2018159952A JP2018159952A (en) 2018-10-11
JP2018159952A5 true JP2018159952A5 (en) 2019-04-11

Family

ID=40294456

Family Applications (11)

Application Number Title Priority Date Filing Date
JP2008191701A Withdrawn JP2009049399A (en) 2007-07-26 2008-07-25 Display device
JP2014089375A Active JP5766329B2 (en) 2007-07-26 2014-04-23 Liquid crystal display
JP2015120530A Active JP6181109B2 (en) 2007-07-26 2015-06-15 Liquid crystal display
JP2017140161A Withdrawn JP2017223965A (en) 2007-07-26 2017-07-19 Liquid crystal display device
JP2017218802A Active JP6348650B2 (en) 2007-07-26 2017-11-14 Liquid crystal display
JP2018119039A Withdrawn JP2018159952A (en) 2007-07-26 2018-06-22 Liquid crystal display device
JP2020163604A Active JP6829791B1 (en) 2007-07-26 2020-09-29 Liquid crystal display device
JP2021009026A Withdrawn JP2021073524A (en) 2007-07-26 2021-01-22 Display apparatus
JP2022041476A Active JP7329647B2 (en) 2007-07-26 2022-03-16 liquid crystal display
JP2023128471A Active JP7440692B2 (en) 2007-07-26 2023-08-07 liquid crystal display device
JP2024020768A Active JP7475566B1 (en) 2007-07-26 2024-02-15 Liquid crystal display device

Family Applications Before (5)

Application Number Title Priority Date Filing Date
JP2008191701A Withdrawn JP2009049399A (en) 2007-07-26 2008-07-25 Display device
JP2014089375A Active JP5766329B2 (en) 2007-07-26 2014-04-23 Liquid crystal display
JP2015120530A Active JP6181109B2 (en) 2007-07-26 2015-06-15 Liquid crystal display
JP2017140161A Withdrawn JP2017223965A (en) 2007-07-26 2017-07-19 Liquid crystal display device
JP2017218802A Active JP6348650B2 (en) 2007-07-26 2017-11-14 Liquid crystal display

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2020163604A Active JP6829791B1 (en) 2007-07-26 2020-09-29 Liquid crystal display device
JP2021009026A Withdrawn JP2021073524A (en) 2007-07-26 2021-01-22 Display apparatus
JP2022041476A Active JP7329647B2 (en) 2007-07-26 2022-03-16 liquid crystal display
JP2023128471A Active JP7440692B2 (en) 2007-07-26 2023-08-07 liquid crystal display device
JP2024020768A Active JP7475566B1 (en) 2007-07-26 2024-02-15 Liquid crystal display device

Country Status (5)

Country Link
US (1) US7897971B2 (en)
JP (11) JP2009049399A (en)
KR (1) KR101493300B1 (en)
CN (1) CN101355089B (en)
TW (2) TWI585983B (en)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR100958023B1 (en) * 2008-11-04 2010-05-17 삼성모바일디스플레이주식회사 Organic Light emitting Display device
KR101641532B1 (en) * 2009-02-10 2016-08-01 삼성디스플레이 주식회사 Timing control method, timing control apparatus for performing the same and display device having the same
KR101681884B1 (en) * 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
JP5321269B2 (en) 2009-06-16 2013-10-23 ソニー株式会社 Image display device, image display method, and program
TWI509780B (en) * 2009-07-15 2015-11-21 Silanna Semiconductor Usa Inc Integrated circuit and method of fabricating the same
US9466719B2 (en) 2009-07-15 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator with back side strain topology
US8232597B2 (en) * 2009-07-15 2012-07-31 Io Semiconductor, Inc. Semiconductor-on-insulator with back side connection
US9496227B2 (en) 2009-07-15 2016-11-15 Qualcomm Incorporated Semiconductor-on-insulator with back side support layer
EP2937898A1 (en) 2009-07-15 2015-10-28 Silanna Semiconductor U.S.A., Inc. Semiconductor-on-insulator with backside heat dissipation
US8921168B2 (en) 2009-07-15 2014-12-30 Silanna Semiconductor U.S.A., Inc. Thin integrated circuit chip-on-board assembly and method of making
US9390974B2 (en) 2012-12-21 2016-07-12 Qualcomm Incorporated Back-to-back stacked integrated circuit assembly and method of making
KR102157249B1 (en) * 2009-09-16 2020-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20120093864A (en) 2009-10-09 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011070901A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101836067B1 (en) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Thin film transistor and manufacturing method thereof
TWI535028B (en) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 Thin film transistor
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
KR20120120458A (en) 2010-02-26 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
CN102214677A (en) * 2010-04-12 2011-10-12 三星移动显示器株式会社 Thin film transistor and display device having the same
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8735231B2 (en) * 2010-08-26 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of dual-gate thin film transistor
JP2013251284A (en) 2010-09-21 2013-12-12 Sharp Corp Semiconductor device and manufacturing method of the same
KR101631632B1 (en) 2011-04-22 2016-06-20 삼성전자주식회사 Illumination device
KR101884891B1 (en) * 2012-02-08 2018-08-31 삼성디스플레이 주식회사 Display device
US9502233B2 (en) * 2012-03-22 2016-11-22 Hitachi Kokusai Electric, Inc. Method for manufacturing semiconductor device, method for processing substrate, substrate processing device and recording medium
KR101949225B1 (en) 2012-04-16 2019-04-26 삼성디스플레이 주식회사 Thin film transistor and display device having the same
KR101965256B1 (en) * 2012-10-17 2019-04-04 삼성디스플레이 주식회사 Organic light emitting display device and the manufacturing method thereof
US9246133B2 (en) * 2013-04-12 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting module, light-emitting panel, and light-emitting device
US9257290B2 (en) 2013-12-25 2016-02-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film transistor and manufacturing method thereof
CN103762178A (en) * 2013-12-25 2014-04-30 深圳市华星光电技术有限公司 LTPS TFT and manufacturing method thereof
KR102377341B1 (en) 2014-06-23 2022-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
JP6392061B2 (en) * 2014-10-01 2018-09-19 東京エレクトロン株式会社 Electronic device, manufacturing method thereof, and manufacturing apparatus thereof
JP6555869B2 (en) * 2014-10-17 2019-08-07 キヤノン株式会社 Capacitive transducer
KR102473101B1 (en) * 2016-04-04 2022-12-01 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 Display device
US10147718B2 (en) * 2016-11-04 2018-12-04 Dpix, Llc Electrostatic discharge (ESD) protection for the metal oxide medical device products
CN109727530A (en) * 2017-10-31 2019-05-07 昆山工研院新型平板显示技术中心有限公司 Flexible Displays mould group and Flexible Displays mould group preparation method
KR20200066438A (en) 2018-11-30 2020-06-10 삼성디스플레이 주식회사 Display device and method of manufacturing the same
US11011572B2 (en) * 2019-05-10 2021-05-18 Innolux Corporation Laminated structures and electronic devices
CN113450645B (en) * 2020-03-27 2023-08-01 群创光电股份有限公司 Display panel and spliced display device
KR20210128544A (en) * 2020-04-16 2021-10-27 삼성디스플레이 주식회사 Display device
CN112365796B (en) * 2020-11-26 2022-09-27 京东方科技集团股份有限公司 Backlight module and display device
WO2023024058A1 (en) * 2021-08-27 2023-03-02 京东方科技集团股份有限公司 Display substrate and display apparatus
CN114267686B (en) * 2021-12-14 2023-08-22 武汉华星光电半导体显示技术有限公司 Display panel and display device
CN116364780A (en) * 2023-03-27 2023-06-30 惠科股份有限公司 Thin film transistor, manufacturing method thereof, electrostatic discharge protection circuit and display device

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713777A (en) * 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
USRE34658E (en) * 1980-06-30 1994-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device of non-single crystal-structure
JPH03278466A (en) * 1990-03-27 1991-12-10 Toshiba Corp Thin film transistor and manufacture thereof
EP0473988A1 (en) * 1990-08-29 1992-03-11 International Business Machines Corporation Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (en) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 Electro-optical device and manufacturing method thereof
KR950013784B1 (en) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 Field effect trasistor and its making method and tft
JP2838318B2 (en) * 1990-11-30 1998-12-16 株式会社半導体エネルギー研究所 Photosensitive device and manufacturing method thereof
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP3255942B2 (en) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 Method for manufacturing inverted staggered thin film transistor
JP2924441B2 (en) * 1992-04-27 1999-07-26 日本電気株式会社 Thin film transistor and method of manufacturing the same
JP2661594B2 (en) * 1995-05-25 1997-10-08 日本電気株式会社 Thin film transistor and method of manufacturing the same
KR100257158B1 (en) 1997-06-30 2000-05-15 김영환 Thin film transistor and method for manufacturing the same
US6121660A (en) * 1997-09-23 2000-09-19 Semiconductor Energy Laboratory Co., Ltd. Channel etch type bottom gate semiconductor device
US6013930A (en) * 1997-09-24 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having laminated source and drain regions and method for producing the same
US6218219B1 (en) * 1997-09-29 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP4376979B2 (en) * 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2001257350A (en) * 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd Semiconductor device and its preparation method
JP4683688B2 (en) * 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
JP2002026333A (en) * 2000-07-11 2002-01-25 Nec Corp Method of manufacturing active matrix board
JP4718677B2 (en) * 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP4267242B2 (en) * 2001-03-06 2009-05-27 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP3946547B2 (en) 2001-06-05 2007-07-18 シャープ株式会社 Active matrix substrate, display device and detection device
JP3831868B2 (en) 2001-08-13 2006-10-11 大林精工株式会社 Active matrix display device and manufacturing method thereof
JP3842676B2 (en) * 2002-03-22 2006-11-08 株式会社日立製作所 Liquid crystal display
US7592980B2 (en) * 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4248306B2 (en) * 2002-06-17 2009-04-02 シャープ株式会社 Liquid crystal display
JP4286496B2 (en) * 2002-07-04 2009-07-01 株式会社半導体エネルギー研究所 Vapor deposition apparatus and thin film manufacturing method
JP2004109418A (en) 2002-09-18 2004-04-08 Hitachi Ltd Liquid crystal display device
JP4439861B2 (en) 2002-09-20 2010-03-24 株式会社半導体エネルギー研究所 Method for manufacturing display device
JP4984369B2 (en) 2002-12-10 2012-07-25 株式会社ジャパンディスプレイイースト Image display device and manufacturing method thereof
TW577176B (en) * 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
JP4748954B2 (en) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 Liquid crystal display
US8319219B2 (en) * 2003-07-14 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP4112527B2 (en) * 2003-07-14 2008-07-02 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device of system on panel type
JP2005134889A (en) * 2003-10-01 2005-05-26 Samsung Electronics Co Ltd Thin film transistor display plate and liquid crystal display device containing the same
JP4574158B2 (en) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 Semiconductor display device and manufacturing method thereof
KR100557732B1 (en) * 2003-12-26 2006-03-06 엘지.필립스 엘시디 주식회사 Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same
TWI366701B (en) * 2004-01-26 2012-06-21 Semiconductor Energy Lab Method of manufacturing display and television
JP4299717B2 (en) 2004-04-14 2009-07-22 Nec液晶テクノロジー株式会社 Thin film transistor and manufacturing method thereof
JP2005322845A (en) 2004-05-11 2005-11-17 Sekisui Chem Co Ltd Semiconductor device, and manufacturing device thereof and manufacturing method thereof
KR20060046241A (en) * 2004-06-29 2006-05-17 엘지.필립스 엘시디 주식회사 Liquid crystal display device
KR101107981B1 (en) * 2004-09-03 2012-01-25 삼성전자주식회사 Substrate for Diaplay Apparatus, Liquid Crystal Display Apparatus And Method of Manufacturing The Same
JP4592384B2 (en) * 2004-10-25 2010-12-01 シャープ株式会社 Liquid crystal display
US7826018B2 (en) * 2004-12-27 2010-11-02 Samsung Electronics Co., Ltd. Liquid crystal display
JP4571855B2 (en) 2004-12-28 2010-10-27 シャープ株式会社 Substrate for liquid crystal display device, liquid crystal display device including the same, and driving method thereof
KR101085451B1 (en) * 2005-02-11 2011-11-21 삼성전자주식회사 Tft substrate for display apparatus and manufacturing method of the same
CN100463018C (en) * 2005-05-23 2009-02-18 夏普株式会社 Active matrix substrate, display device, and pixel defect correcting method
WO2006132369A1 (en) * 2005-06-09 2006-12-14 Sharp Kabushiki Kaisha Liquid crystal display device
KR101219039B1 (en) * 2005-06-14 2013-01-07 삼성디스플레이 주식회사 Thin film transistor array panel and liquid display including the same
KR101134932B1 (en) * 2005-06-14 2012-04-17 엘지디스플레이 주식회사 Liquid crystal display device and method for fabricating thereof
JP4577114B2 (en) 2005-06-23 2010-11-10 ソニー株式会社 Thin film transistor manufacturing method and display device manufacturing method
KR101152528B1 (en) * 2005-06-27 2012-06-01 엘지디스플레이 주식회사 Liquid crystal display device capable of reducing leakage current and fabrication method thereof
JP2007035964A (en) * 2005-07-27 2007-02-08 Sony Corp Thin film transistor and manufacturing method thereof, and display device
JP2007041096A (en) * 2005-08-01 2007-02-15 Sanyo Epson Imaging Devices Corp Electrooptical device, its manufacturing method, and electronic equipment
JP4039446B2 (en) 2005-08-02 2008-01-30 エプソンイメージングデバイス株式会社 Electro-optical device and electronic apparatus
KR101240644B1 (en) * 2005-08-09 2013-03-11 삼성디스플레이 주식회사 Thin film transistor array panel
JP4874599B2 (en) * 2005-08-11 2012-02-15 東芝モバイルディスプレイ株式会社 Liquid crystal display
TWI409934B (en) * 2005-10-12 2013-09-21 Semiconductor Energy Lab Semiconductor device
KR101158896B1 (en) * 2005-10-28 2012-06-25 삼성전자주식회사 Substrate having thin film transistor and method for making the substrate, and liquid crystal display panel and electro luminescence display panel having the transistor
KR20070051045A (en) 2005-11-14 2007-05-17 삼성전자주식회사 Liquid crystal display
JP5144055B2 (en) * 2005-11-15 2013-02-13 三星電子株式会社 Display substrate and display device having the same
KR101383714B1 (en) * 2005-12-02 2014-04-09 삼성디스플레이 주식회사 Liquid crystal display
US7583354B2 (en) * 2005-12-26 2009-09-01 Sharp Kabushiki Kaisha Active matrix substrate, display device, television receiver, and method for repairing defects of active matrix substrate
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device

Similar Documents

Publication Publication Date Title
JP2018159952A5 (en) VA liquid crystal display device
JP2020016908A5 (en)
JP2019194700A5 (en)
JP2021082821A5 (en)
JP2016139159A5 (en)
JP2017191317A5 (en)
JP2014170952A5 (en) Liquid crystal display
JP2016195267A5 (en)
JP2017021370A5 (en)
JP2017138635A5 (en)
JP2017191781A5 (en) Display device
JP2014157357A5 (en) Liquid crystal display
JP2016184173A5 (en) Semiconductor device, mobile phone, display device
JP2017054152A5 (en)
JP2015018264A5 (en)
JP2011197657A5 (en)
JP2013175714A5 (en) Semiconductor device
JP2014130345A5 (en)
JP2014095895A5 (en) Liquid crystal display
JP2011192979A5 (en)
JP2011138117A5 (en)
JP2016201539A5 (en) Semiconductor device, touch panel and electronic device
JP2011100117A5 (en) Liquid crystal display
JP2011211171A5 (en) Semiconductor device and electronic device
JP2015188054A5 (en)