JP2018152424A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2018152424A JP2018152424A JP2017046471A JP2017046471A JP2018152424A JP 2018152424 A JP2018152424 A JP 2018152424A JP 2017046471 A JP2017046471 A JP 2017046471A JP 2017046471 A JP2017046471 A JP 2017046471A JP 2018152424 A JP2018152424 A JP 2018152424A
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Abstract
Description
工程S2および工程S3は、例えば以下の条件で実施され得る。なお、以下の条件は、処理室4の内側の表面にプリコート膜PCが形成されていない場合の条件である。
・処理室4内の圧力の値[Pa]:0.67〜13.3[Pa]
・高周波電源15の周波数の値[MHz]および高周波電力の値[ワット]:13.56[MHz]、0〜2000[ワット]
・処理ガス:O2ガス(第1のガス)、SiF4ガス(第2のガス)
工程S1で用いられる処理室4の内側の表面には、シリコンとフッ素とを含有するプリコート膜PCが形成されている場合がある。プリコート膜PCの膜厚は約100[nm]以下である。またプリコート膜PCの形成場所は処理室4内のほぼ全面である。
Claims (10)
- 被処理体に対する成膜方法であって、該被処理体は主面と溝部とを備え、該溝部は該主面に設けられ、該方法は、
プラズマ処理装置の処理室内に前記被処理体を収容する第1工程と、
前記第1工程の後に、前記処理室内に第1のガスの供給を開始する第2工程と、
前記第2工程の後に、第2のガスとプラズマ生成用高周波電力とを前記処理室内に供給して該第2のガスを含む該処理室内のガスによるプラズマを該処理室内において生成する処理を開始する第3工程と、
を備え、
前記第1のガスは、水素原子を含まない酸化剤を含有するガスであり、
前記第2のガスは、ケイ素原子およびフッ素原子を含み水素原子を含まない化合物を含有するガスであり、
ケイ素および酸素を含有する膜が、前記溝部を除く前記被処理体の前記主面上に選択的に形成される、
方法。 - 前記第3工程の実行時における前記被処理体の温度は、摂氏450度未満である、
請求項1に記載の方法。 - 前記主面と前記溝部の側面とは、絶縁性材料を含有する、
請求項1または請求項2に記載の方法。 - 前記第2のガスは、SixFy(x,yは1以上の整数)の組成を有する一または複数の種類のガスを含有する、
請求項1〜3の何れか一項に記載の方法。 - 前記第2のガスは、SiF4を含有するガス、または、SiF4とSi2F6とを共にを含有するガスである、
請求項4に記載の方法。 - 前記第1のガスは、O2、O3、NxOy(x,yは1以上の整数)の何れかを含有するガスである、
請求項1〜5の何れか一項に記載の方法。 - 前記第2のガスは、希ガスを更に含有する、
請求項1〜6の何れか一項に記載の方法。 - 前記第3工程において、前記処理室内への前記第2のガスの供給を開始する第1の開始タイミングは、該処理室内への前記プラズマ生成用高周波電力の供給を開始する第2の開始タイミングの以後の期間内にある、
請求項1〜7の何れか一項に記載の方法。 - 前記第3工程の後に、プラズマの生成を終了する第4工程をさらに備え、
前記第4工程において、前記処理室内への前記第2のガスの供給を終了する第1の終了タイミングは、該処理室内への前記プラズマ生成用高周波電力の供給を終了する第2の終了タイミングの以後であって且つ該処理室内への前記第1のガスの供給を終了する第3の終了タイミングよりも前の期間内にある、または、該第2の終了タイミングよりも後であって且つ該第3の終了タイミングの以前の期間内にある、
請求項1〜8の何れか一項に記載の方法。 - 前記第1工程において、前記処理室の内側の表面は、シリコンとフッ素とを含有するプリコート膜で覆われている部分を有する、
請求項1〜9の何れか一項に記載の方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2017046471A JP6963900B2 (ja) | 2017-03-10 | 2017-03-10 | 成膜方法 |
TW107107359A TWI757442B (zh) | 2017-03-10 | 2018-03-06 | 成膜方法 |
US15/915,853 US10431450B2 (en) | 2017-03-10 | 2018-03-08 | Film forming method |
KR1020180027198A KR101978818B1 (ko) | 2017-03-10 | 2018-03-08 | 성막 방법 |
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JP2017046471A JP6963900B2 (ja) | 2017-03-10 | 2017-03-10 | 成膜方法 |
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JP2018152424A true JP2018152424A (ja) | 2018-09-27 |
JP6963900B2 JP6963900B2 (ja) | 2021-11-10 |
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US (1) | US10431450B2 (ja) |
JP (1) | JP6963900B2 (ja) |
KR (1) | KR101978818B1 (ja) |
TW (1) | TWI757442B (ja) |
Citations (9)
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JPH08330293A (ja) * | 1995-05-30 | 1996-12-13 | Anelva Corp | 絶縁膜の作成方法及びこの方法に使用されるプラズマ気相成長装置 |
JPH09260369A (ja) * | 1996-03-25 | 1997-10-03 | Toshiba Corp | 絶縁膜の形成方法 |
JPH10340898A (ja) * | 1997-06-05 | 1998-12-22 | Sumitomo Metal Ind Ltd | 半導体装置及びその製造方法 |
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US6740601B2 (en) * | 2001-05-11 | 2004-05-25 | Applied Materials Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
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US20180261452A1 (en) | 2018-09-13 |
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