JP2018148016A - 発光ダイオードチップの製造方法及び発光ダイオードチップ - Google Patents
発光ダイオードチップの製造方法及び発光ダイオードチップ Download PDFInfo
- Publication number
- JP2018148016A JP2018148016A JP2017041315A JP2017041315A JP2018148016A JP 2018148016 A JP2018148016 A JP 2018148016A JP 2017041315 A JP2017041315 A JP 2017041315A JP 2017041315 A JP2017041315 A JP 2017041315A JP 2018148016 A JP2018148016 A JP 2018148016A
- Authority
- JP
- Japan
- Prior art keywords
- transparent substrate
- emitting diode
- transparent
- wafer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 238000005520 cutting process Methods 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017041315A JP2018148016A (ja) | 2017-03-06 | 2017-03-06 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| TW107104141A TWI789375B (zh) | 2017-03-06 | 2018-02-06 | 發光二極體晶片的製造方法 |
| KR1020180023657A KR102315305B1 (ko) | 2017-03-06 | 2018-02-27 | 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 |
| CN201810171673.1A CN108538995A (zh) | 2017-03-06 | 2018-03-01 | 发光二极管芯片的制造方法和发光二极管芯片 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017041315A JP2018148016A (ja) | 2017-03-06 | 2017-03-06 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2018148016A true JP2018148016A (ja) | 2018-09-20 |
Family
ID=63485903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017041315A Pending JP2018148016A (ja) | 2017-03-06 | 2017-03-06 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018148016A (zh) |
| KR (1) | KR102315305B1 (zh) |
| CN (1) | CN108538995A (zh) |
| TW (1) | TWI789375B (zh) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005093728A (ja) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | 発光装置 |
| JP2012099788A (ja) * | 2010-11-01 | 2012-05-24 | Samsung Led Co Ltd | 半導体発光素子 |
| WO2013114480A1 (ja) * | 2012-02-01 | 2013-08-08 | パナソニック株式会社 | 半導体発光素子、その製造方法及び光源装置 |
| US20140159090A1 (en) * | 2012-12-07 | 2014-06-12 | Epistar Corporation | light emitting device |
| JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
| JP2015018953A (ja) * | 2013-07-11 | 2015-01-29 | 株式会社ディスコ | 発光チップ |
| KR20150062194A (ko) * | 2013-11-28 | 2015-06-08 | 순천대학교 산학협력단 | 측면 발광 다이오드 및 그 제조 방법 |
| JP2016521463A (ja) * | 2013-05-15 | 2016-07-21 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 基板内に散乱機構を有するｌｅｄ |
| KR101662751B1 (ko) * | 2015-07-02 | 2016-10-07 | 참엔지니어링(주) | 기판 처리 장치 및 이를 이용한 기판 처리 방법과 이로 제작된 기판 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4122739B2 (ja) * | 2001-07-26 | 2008-07-23 | 松下電工株式会社 | 発光素子及びその製造方法 |
| KR100959079B1 (ko) * | 2005-06-27 | 2010-05-20 | 한빔 주식회사 | 열방출이 개선된 전면발광형 발광다이오드 소자 및 이의 제조방법 |
| JP5495876B2 (ja) * | 2010-03-23 | 2014-05-21 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
| TW201347242A (zh) * | 2012-02-27 | 2013-11-16 | Mitsubishi Chem Corp | 波長變換構件及使用其之半導體發光裝置 |
| JP5941306B2 (ja) * | 2012-03-19 | 2016-06-29 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
| JP2014175362A (ja) * | 2013-03-06 | 2014-09-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP2014175354A (ja) | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | 発光ダイオード |
| TWI513051B (zh) * | 2013-05-08 | 2015-12-11 | Ind Tech Res Inst | 發光二極體晶圓及其製造方法 |
| TWI593139B (zh) * | 2013-08-30 | 2017-07-21 | Asahi Kasei E-Materials Corp | Semiconductor light-emitting element and optical film |
| KR20150047844A (ko) * | 2013-10-25 | 2015-05-06 | 주식회사 세미콘라이트 | 반도체 발광다이오드 |
| JP6255235B2 (ja) * | 2013-12-20 | 2017-12-27 | 株式会社ディスコ | 発光チップ |
| WO2015099084A1 (ja) * | 2013-12-26 | 2015-07-02 | 信越石英株式会社 | 波長変換用石英ガラス部材及びその製造方法 |
| JP6255255B2 (ja) * | 2014-01-27 | 2017-12-27 | 株式会社ディスコ | 光デバイスの加工方法 |
-
2017
- 2017-03-06 JP JP2017041315A patent/JP2018148016A/ja active Pending
-
2018
- 2018-02-06 TW TW107104141A patent/TWI789375B/zh active
- 2018-02-27 KR KR1020180023657A patent/KR102315305B1/ko active IP Right Grant
- 2018-03-01 CN CN201810171673.1A patent/CN108538995A/zh active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005093728A (ja) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | 発光装置 |
| JP2012099788A (ja) * | 2010-11-01 | 2012-05-24 | Samsung Led Co Ltd | 半導体発光素子 |
| WO2013114480A1 (ja) * | 2012-02-01 | 2013-08-08 | パナソニック株式会社 | 半導体発光素子、その製造方法及び光源装置 |
| US20140159090A1 (en) * | 2012-12-07 | 2014-06-12 | Epistar Corporation | light emitting device |
| JP2016521463A (ja) * | 2013-05-15 | 2016-07-21 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 基板内に散乱機構を有するｌｅｄ |
| JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
| JP2015018953A (ja) * | 2013-07-11 | 2015-01-29 | 株式会社ディスコ | 発光チップ |
| KR20150062194A (ko) * | 2013-11-28 | 2015-06-08 | 순천대학교 산학협력단 | 측면 발광 다이오드 및 그 제조 방법 |
| KR101662751B1 (ko) * | 2015-07-02 | 2016-10-07 | 참엔지니어링(주) | 기판 처리 장치 및 이를 이용한 기판 처리 방법과 이로 제작된 기판 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108538995A (zh) | 2018-09-14 |
| TW201838000A (zh) | 2018-10-16 |
| KR102315305B1 (ko) | 2021-10-19 |
| KR20180102010A (ko) | 2018-09-14 |
| TWI789375B (zh) | 2023-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2018148014A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018129343A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018026383A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018026386A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2017220479A (ja) | 発光ダイオードチップの製造方法 | |
| JP2017220478A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018060867A (ja) | 発光ダイオードチップの製造方法 | |
| JP2018116968A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018148016A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018129347A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018129370A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018113386A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018129341A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018129345A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018113387A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018113388A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018113384A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018181877A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018181874A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018113385A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018182165A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018182169A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018026387A (ja) | 発光ダイオードチップの製造方法 | |
| JP2018182168A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ | |
| JP2018026384A (ja) | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200109 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210105 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201228 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210629 |