JP2018098266A5

JP2018098266A5 -

Info

Publication number: JP2018098266A5
Application number: JP2016238781A
Authority: JP
Filing date: 2016-12-08
Publication date: 2020-01-23

Description

本発明の１つの側面は、シリコン基板を有する光電変換装置に係り、前記シリコン基板は、光電変換を行う第１部分と、前記第１部分よりも前記シリコン基板の受光面から離れて配され、炭素を含有する第２部分とを含み、前記第２部分における炭素ピーク濃度が１×１０^１８［ａｔｏｍｓ／ｃｍ^３］以上かつ１×１０^２０［ａｔｏｍｓ／ｃｍ^３］以下であり、前記第２部分における酸素ピーク濃度が前記炭素ピーク濃度の１／１０００以上かつ１／１０以下である。 One aspect of the present invention relates to a photoelectric conversion device having a silicon substrate, wherein the silicon substrate is disposed farther from a light receiving surface of the silicon substrate than the first portion that performs photoelectric conversion, and A second portion containing carbon , wherein a carbon peak concentration in the second portion is 1 × 10 ¹⁸ [atoms / cm ³ ] or more and 1 × 10 ²⁰ [atoms / cm ³ ] or less, and the second portion oxygen peak concentration in is less than 1/1000 and not more than 1/10 of the carbon-containing peak concentrations.

Claims

A photoelectric conversion device having a silicon substrate,
The silicon substrate includes a first portion that performs photoelectric conversion, and a second portion that is disposed farther from the light receiving surface of the silicon substrate than the first portion and contains carbon .
A carbon peak concentration in the second portion is 1 × 10 ¹⁸ [atoms / cm ³ ] or more and 1 × 10 ²⁰ [atoms / cm ³ ] or less;
The oxygen peak concentration is 1/1000 or more and 1/10 or less of the carbon-containing peak concentration in the second portion,
A photoelectric conversion device characterized by the above-mentioned.

In a direction perpendicular to the light receiving surface, the first portion is disposed between the second portion and the light receiving surface,
The photoelectric conversion device according to claim 1, wherein:

The first portion is disposed in a region where the carbon concentration is lower than the oxygen concentration ;
The photoelectric conversion device according to claim 1 or 2, wherein:

The position at which the silicon substrate indicates the carbon peak concentration is located within a range of 3 μm to 20 μm from the light receiving surface.
The photoelectric conversion device according to any one of claims 1 to 3, wherein:

The second portion has a first region having a carbon concentration of 1 × 10 ¹⁸ [atoms / cm ³ ] or more, and a dimension of the first region in a direction orthogonal to the light receiving surface is 3 μm or less.
The photoelectric conversion device according to any one of claims 1 to 4, wherein:

Said second portion has a second area carbon concentration is ^{1 × 10 19 [atoms / cm} 3] or more, the oxygen concentration in the second region is at ^{3 × 10 18 [atoms / cm} 3] or less is there,
The photoelectric conversion device according to any one of claims 1 to 5, wherein:

The second portion has a carbon concentration of 1 × 10 ^１８18 [Atoms / cm ^３3 ] Or more and 1 × 10 ^１９19 [Atoms / cm ^３3 ] A third region, wherein the oxygen concentration in the third region is 1 x 10 ^１８18 [Atoms / cm ^３3 ]
The photoelectric conversion device according to claim 1, wherein:

A peripheral circuit unit for reading a signal from a pixel including the first portion;
The peripheral circuit section, viewed contains a transistor having a silicide region, the silicide region comprises at least one of nickel and cobalt,
The photoelectric conversion device according to any one of claims 1 to 7, characterized in that.

The silicon substrate is provided with an element isolation portion composed of an insulator having an STI structure.
The photoelectric conversion device according to any one of claims 1 to 8, wherein:

The first portion includes an n-type first impurity region, and a p-type second impurity region located between the first impurity region and the second portion.
An n-type impurity region is provided between the second impurity region and the second portion;
The photoelectric conversion device according to claim 1, wherein:

A method for manufacturing a semiconductor substrate, comprising:
An oxygen-containing part having an oxygen concentration of 2 × 10 ¹⁶ [atoms / cm ³ ] or more and 8 × 10 ¹⁷ [atoms / cm ³ ] or less, and an oxygen concentration of 3 × 10 ¹⁸ [atoms / cm ³ ] or less A step of preparing a silicon plate containing a carbon-containing portion ,
Look including a step of forming a silicon layer on the silicon plate so as to be disposed between the carbon-containing portion is the oxygen-containing portion and the silicon layer,
The semiconductor substrate includes silicon of the silicon plate and silicon of the silicon layer,
A carbon peak concentration of the semiconductor substrate is 1 × 10 ¹⁸ [atoms / cm ³ ] or more and 1 × 10 ²⁰ [atoms / cm ³ ] or less;
An oxygen peak concentration in the semiconductor substrate is not less than 1/1000 and not more than 1/10 of the carbon peak concentration;
A method for manufacturing a semiconductor substrate, comprising:

The step of preparing the silicon plate is 2 × 10 ^１６16 [Atoms / cm ^３3 ] And more than 8 × 10 ^１７17 [Atoms / cm ^３3 ] Injecting carbon into the silicon wafer with the following oxygen concentration,
The silicon plate includes silicon of the silicon wafer,
The method for manufacturing a semiconductor substrate according to claim 11, wherein:

The step of implanting the carbon is performed by accelerating and implanting carbon ions with an acceleration energy within a range of 10 KeV to 200 KeV.
The method for manufacturing a semiconductor substrate according to claim 12 , wherein:

In the step of injecting the carbon, the dose of the carbon is designed to be around ^{1 × 10 14 [atoms / cm} 2] from a range of ^{5 × 10 15 [atoms / cm} 2],
The method for manufacturing a semiconductor substrate according to claim 12 , wherein:

In the step of implanting the carbon, using a mask having an opening, implanting carbon through the opening,
The method of manufacturing a semiconductor substrate according to claim 12, wherein:

The step of preparing the silicon plate includes forming a single crystal silicon ingot by an MCZ method, and slicing the single crystal silicon ingot to form a silicon wafer,
The silicon plate includes silicon of the silicon wafer,
The method for manufacturing a semiconductor substrate according to claim 11, wherein:

A method for manufacturing a photoelectric conversion device,
Preparing a silicon substrate including a first semiconductor region, and a second semiconductor region disposed on the first semiconductor region;
Forming a photoelectric conversion unit in the second semiconductor region.
The carbon peak concentration of the first semiconductor region is 1 × 10 ^１８18 [Atoms / cm ^３3 ] Or more and 1 × 10 ^２０20 [Atoms / cm ^３3 ]
An oxygen peak concentration in the first semiconductor region is not less than 1/1000 and not more than 1/10 of the carbon peak concentration;
A method for manufacturing a photoelectric conversion device, comprising:

The first semiconductor region is 2 × 10 ^１６16 [Atoms / cm ^３3 ] And more than 8 × 10 ^１７17 [Atoms / cm ^３3 ] Comprising an oxygen-containing part having the following oxygen concentration:
The method for manufacturing a photoelectric conversion device according to claim 17, wherein:

Forming a transistor of a peripheral circuit for reading a signal from a pixel including the photoelectric conversion unit in the second semiconductor region ,
The transistor is, look at including a silicide region,
The silicide region includes at least one of nickel and cobalt;
The method for manufacturing a photoelectric conversion device according to claim 18, wherein:

A photoelectric conversion device according to any one of claims 1 to 10,
A processing unit that processes image data from the photoelectric conversion device,
A camera comprising:

A photoelectric conversion device,
A silicon substrate on which the photoelectric conversion unit is arranged,
A gate electrode of a transistor disposed on the surface of the silicon substrate,
A carbon concentration of the silicon substrate at a position farther from the surface of the silicon substrate than the photoelectric conversion unit is 1 × 10 ¹⁸ [atoms / cm ³ ] or more and 1 × 10 ²⁰ [atoms / cm ³ ] or less;
The oxygen concentration at the position is not less than 1/1000 and not more than 1/10 of the carbon concentration at the position;
A photoelectric conversion device characterized by the above-mentioned.

The carbon concentration at the position is 1 × 10 ^１９19 [Atoms / cm ^３3 ]
The photoelectric conversion device according to claim 21, wherein:

The oxygen concentration at the position is 1 × 10 ^１８18 [Atoms / cm ^３3 ]
The photoelectric conversion device according to claim 21 or 22, wherein:

The silicon substrate is 2 × 10 ^１６16 [Atoms / cm ^３3 ] And more than 8 × 10 ^１７17 [Atoms / cm ^３3 ] Including a region having the following oxygen concentration:
The region is farther from the surface of the silicon substrate than the position,
The photoelectric conversion device according to claim 21, wherein:

The oxygen concentration in the region is 2 × 10 ^１７17 [Atoms / cm ^３3 ] Is less than,
The photoelectric conversion device according to claim 24, wherein:

The oxygen concentration of the region is higher than the carbon concentration of the region;
The photoelectric conversion device according to claim 24, wherein:

The transistor includes a silicide region including at least one of nickel and cobalt.
The photoelectric conversion device according to any one of claims 21 to 26, wherein:

The distance between the surface and the position is 6 μm or more and 12 μm or less,
The photoelectric conversion device according to any one of claims 21 to 27, wherein:

The silicon substrate shows the carbon peak concentration at a first depth of the silicon substrate, and shows the oxygen peak concentration at a second depth of the silicon substrate.
The photoelectric conversion device according to any one of claims 1 to 10, wherein:

A photoelectric conversion device according to any one of claims 21 to 29,
A processing unit that processes image data from the photoelectric conversion device,
A camera comprising: