JP2018073812A - 層状構造を有する赤外線エミッタ - Google Patents
層状構造を有する赤外線エミッタ Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 238000005259 measurement Methods 0.000 claims abstract description 7
- 238000005485 electric heating Methods 0.000 claims abstract description 3
- 238000001745 non-dispersive infrared spectroscopy Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000011344 liquid material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000011343 solid material Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- -1 polycrystalline Chemical compound 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 16
- 239000006096 absorbing agent Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H05B3/00—Ohmic-resistance heating
- H05B3/84—Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0256—Compact construction
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0286—Constructional arrangements for compensating for fluctuations caused by temperature, humidity or pressure, or using cooling or temperature stabilization of parts of the device; Controlling the atmosphere inside a spectrometer, e.g. vacuum
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- G—PHYSICS
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
- G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
- G01J5/53—Reference sources, e.g. standard lamps; Black bodies
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
- G01J2005/063—Heating; Thermostating
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- Investigating Or Analysing Materials By Optical Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
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Abstract
Description
少なくとも1つの遮蔽誘電体層と、
高い屈折率を有する光学的に整合する誘電体層と、
少なくとも1つの遮蔽誘電体層と、
半透明金属層と、
少なくとも1つの遮蔽誘電体層とを含み、
電気加熱手段は、遮蔽誘電体層の内に又は間に配置される。
第1の遮蔽誘電体層と、
高い屈折率を有する光学的に整合する誘電体層と、
第2の遮蔽誘電体層と、
第3の遮蔽誘電体層と、
層状構造における唯一の金属層である半透明金属層と、
第4の遮蔽誘電体層と、
第5の遮蔽誘電体層と、
遮蔽誘電体層のいずれか1つの内に又は間に配置される電気加熱手段とを含む。
side operation)のために、図1Aの例示的な構造に例示される層は、基板24の上に逆の順序で配置されてよい。
11 第5の遮蔽層(fifth dielectric shielding layer)
12 光学的に整合する誘電体層(optically matching dielectric layer)
13 第4の誘電体遮蔽層(fourth dielectric shielding layer)
14 第3の誘電体遮蔽層(third dielectric shielding layer)
15 半透明金属層(semi−transparent metal layer)
17 自己支持誘電体遮蔽層(self−supporting dielectric shielding layer)
20 発熱抵抗体配線(heating resistor wiring)
21 コンタクト端子(contact terminal)
22 コンタクト端子(contact terminal)
24 シリコン基板(silicon substrate)
25 中央開口(central opening)
Claims (13)
- 2つ又はそれよりも多くの誘電体層の間に積み重ねられた少なくとも1つの金属層と、該少なくとも1つの金属層を所要の赤外線放射温度まで、好ましくは、400℃〜1000℃の範囲内の温度まで加熱するために、前記誘電体層のいずれかの内に又は間に配置される、電気加熱手段とを有する、層状構造を含み、
該層状構造内の各金属層は、半透明金属層である、
層状赤外線エミッタデバイス。 - 前記層状構造は、1つだけの金属層を含む、請求項1に記載の層状赤外線エミッタデバイス。
- 前記層状構造は、半透明金属層のスタックを含む、請求項1に記載の層状赤外線エミッタデバイス。
- 前記半透明金属層の厚さは、2nm〜5nmの範囲、好ましくは、3nm〜20nmの範囲、より好ましくは、5nm〜15nmの範囲から選択される、請求項1に記載の層状赤外線エミッタデバイス。
- 前記半透明金属層は、熱的に安定した金属で作られ、該金属は、好ましくは、耐熱金属又は貴金属から選択され、より好ましくは、モリブデン、タングステン、チタン、タンタル、パラジウム、白金又はニオブのような群から選択される、請求項1に記載の層状赤外線エミッタデバイス。
- 前記誘電体層のうちの少なくとも1つは、前記少なくとも1つの半透明金属層を前記層状構造の放射外面に光学的に整合させるように構成され、前記少なくとも1つの光学的に整合する誘電体層は、好ましくは、ポリシリコン材料又は高い屈折率を有する他の誘電体材料で作られる、請求項1に記載の層状赤外線エミッタデバイス。
- 前記少なくとも1つの光学的に整合する誘電体層の厚さは、前記少なくとも1つの半透明金属層の厚さよりも数倍大きい、請求項6に記載の層状赤外線エミッタデバイス。
- 前記少なくとも1つの光学的に整合する誘電体層及び/又は前記少なくとも1つの半透明金属層は、パターン化され、部分的にパターン化される、請求項6に記載の層状赤外線エミッタデバイス。
- 前記誘電体層は、前記少なくとも1つの半透明層を取り囲んで、前記層状構造の他の層との並びに周囲の作用物質との化学反応を防止するように構成される、遮蔽層を含む、請求項1に記載の層状赤外線エミッタデバイス。
- 前記誘電体層は、前記層状構造の異なる層の間の並びに周囲の作用物質との化学反応を防止するように構成される遮蔽層を含み、該遮蔽層のうちの少なくとも1つは、好ましくは、窒化ケイ素、多結晶、及び酸化アルミニウムのような金属酸化物の群から選択される材料で作られる、請求項1に記載の層状赤外線エミッタデバイス。
- 前記層状構造は、放射側から反対側への順序において、
少なくとも1つの遮蔽誘電体層と、
高い屈折率を有する光学的に整合する誘電体層と、
少なくとも1つの遮蔽誘電体層と、
前記半透明金属層と、
少なくとも1つの遮蔽誘電体層とを含み、
前記電気加熱手段は、前記遮蔽誘電体層の内に又は間に配置される、
請求項1に記載の層状赤外線エミッタデバイス。 - 前記層状構造は、放射側から反対側への順序において、
第1の遮蔽誘電体層と、
高い屈折率を有する光学的に整合する誘電体層と、
第2の遮蔽誘電体層と、
第3の遮蔽誘電体層と、
前記層状構造における唯一の金属層である前記半透明金属層と、
第4の遮蔽誘電体層と、
第5の遮蔽誘電体層と、
前記遮蔽誘電体層のいずれか1つの内に又は間に配置される前記電気加熱手段とを含む、
請求項1に記載の層状赤外線エミッタデバイス。 - 分光学的又はNDIR気体、液体若しくは固体物質測定のための赤外線エミッタデバイスの使用であって、
該赤外線エミッタデバイスは、2つ又はそれよりも多くの誘電体層の間に積み重ねられた少なくとも1つの金属層と、該少なくとも1つの金属層を所要の赤外線放射温度まで、好ましくは、400℃〜1000℃の範囲内の温度まで加熱するために、前記誘電体層のいずれかの内に又は間に配置される、電気加熱手段とを有する、層状構造を含み、該層状構造内の各金属層は、半透明金属層である、
使用。
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FI20165816A FI127446B (en) | 2016-10-28 | 2016-10-28 | Infrared transmitter with layered structure |
FI20165816 | 2016-10-28 |
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JP2018073812A true JP2018073812A (ja) | 2018-05-10 |
JP6543674B2 JP6543674B2 (ja) | 2019-07-10 |
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US (1) | US10001409B2 (ja) |
EP (1) | EP3315929B1 (ja) |
JP (1) | JP6543674B2 (ja) |
CN (1) | CN108012357B (ja) |
FI (1) | FI127446B (ja) |
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DE102015119763A1 (de) * | 2015-11-16 | 2017-05-18 | Heraeus Quarzglas Gmbh & Co. Kg | Infrarotstrahler |
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US10001409B2 (en) | 2018-06-19 |
EP3315929A1 (en) | 2018-05-02 |
FI20165816L (fi) | 2018-04-29 |
JP6543674B2 (ja) | 2019-07-10 |
EP3315929B1 (en) | 2024-03-27 |
EP3315929C0 (en) | 2024-03-27 |
CN108012357A (zh) | 2018-05-08 |
FI20165816A (fi) | 2018-04-29 |
FI127446B (en) | 2018-06-15 |
CN108012357B (zh) | 2020-09-22 |
US20180120158A1 (en) | 2018-05-03 |
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