JP2018037600A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 84
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 66
- 150000004767 nitrides Chemical class 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 52
- 239000010931 gold Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
本実施形態の半導体装置は、第1の窒化物半導体層と、第1の窒化物半導体層の上に設けられ、第1の窒化物半導体層よりも電子親和力の小さい第2の窒化物半導体層と、ゲート電極と、ゲート電極と第2の窒化物半導体層との間に設けられた酸窒化アルミニウム層と、第1の窒化物半導体層に電気的に接続された第1の電極と、第1の電極との間にゲート電極が設けられ、第1の窒化物半導体層に電気的に接続された第2の電極と、第1の電極と酸窒化アルミニウム層との間の、第2の窒化物半導体層の上に設けられた第1の窒化アルミニウム層と、酸窒化アルミニウム層と第2の電極との間の、第2の窒化物半導体層の上に設けられた第2の窒化アルミニウム層と、を備える。
本実施形態の半導体装置は、ゲート電極と酸窒化アルミニウム層との間に設けられた絶縁層を、更に備える以外は第1の実施形態と同様である。以下、第1の実施形態と共通する内容については、記述を省略する場合がある。
16 バリア層(第2の窒化物半導体層)
18a 第1の窒化アルミニウム層
18b 第2の窒化アルミニウム層
22 酸窒化アルミニウム層
24 ゲート電極
26 ソース電極
28 ドレイン電極
30 絶縁層
100 HEMT(半導体装置)
200 HEMT(半導体装置)
Claims (10)
- 第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に設けられ、前記第1の窒化物半導体層よりも電子親和力の小さい第2の窒化物半導体層と、
ゲート電極と、
前記ゲート電極と前記第2の窒化物半導体層との間に設けられた酸窒化アルミニウム層と、
前記第1の窒化物半導体層に電気的に接続された第1の電極と、
前記第1の電極との間に前記ゲート電極が設けられ、前記第1の窒化物半導体層に電気的に接続された第2の電極と、
前記第1の電極と前記酸窒化アルミニウム層との間の、前記第2の窒化物半導体層の上に設けられた第1の窒化アルミニウム層と、
前記酸窒化アルミニウム層と前記第2の電極との間の、前記第2の窒化物半導体層の上に設けられた第2の窒化アルミニウム層と、
を備える半導体装置。 - 前記第1の窒化アルミニウム層が前記第2の窒化物半導体層に接し、前記第2の窒化アルミニウム層が前記第2の窒化物半導体層に接する請求項1記載の半導体装置。
- 前記酸窒化アルミニウム層が前記第2の窒化物半導体層に接する請求項1又は請求項2記載の半導体装置。
- 前記酸窒化アルミニウム層と前記第1の窒化物半導体層との距離をd1、前記第1の窒化アルミニウム層と前記第1の窒化物半導体層との距離をd2とした場合に、d1とd2との差が−1nm以上1nm以下である請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の窒化アルミニウム層が結晶質であり、前記第2の窒化アルミニウム層が結晶質である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の電極が前記第2の窒化物半導体層に接し、前記第2の電極が前記第2の窒化物半導体層に接する請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記酸窒化アルミニウム層中の酸素と窒素の和に対する窒素の原子比が、0.001以上0.1以下である請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記ゲート電極と前記酸窒化アルミニウム層との間に設けられた絶縁層を、更に備える請求項1ないし請求項7いずれか一項記載の半導体装置。
- 第1の窒化物半導体層の上に前記第1の窒化物半導体層よりも電子親和力の小さい第2の窒化物半導体層を形成し、
前記第2の窒化物半導体層の上に窒化アルミニウム層を形成し、
前記窒化アルミニウム層の一部を選択的に酸化して酸窒化アルミニウム層を形成し、
前記酸窒化アルミニウム層の上にゲート電極を形成する半導体装置の製造方法。 - 前記酸窒化アルミニウム層を形成する際、前記酸窒化アルミニウム層が前記2の窒化物半導体層に接するよう酸化する請求項9記載の半導体装置の製造方法。
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