JP2017538164A - 熱伝導部品を有する光学アセンブリ - Google Patents
熱伝導部品を有する光学アセンブリ Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
- G02B7/028—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
- G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
- G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
- G02B7/1815—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation with cooling or heating systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (27)
- 光学アセンブリ、特にマイクロリソグラフィ(10)用の投影露光装置であって、
使用波長(λB)における放射(9)に対して透過性または反射性であり、光学使用領域(4)を有する光学素子(1,7)と、
前記光学素子(1,7)の光学使用領域(4)の外側に配置される熱伝導部品(6)であって、該熱伝導部品(6)は、熱伝導率が500Wm−1K−1超の材料を備え、および/または、ミリメートル単位での前記熱伝導部品(6)の厚さ(D)と該熱伝導部品(6)の材料の熱伝導率(λ)との積について、Dλ>1Wmm m−1K−1、好ましくはDλ>10Wmm m−1K−1、特にDλ>50Wmm m−1K−1が適用される、熱伝導部品(6)と、
を備える光学アセンブリ。 - 請求項1に記載の光学アセンブリであって、前記材料は、1000Wm−1K−1超、好ましくは1700Wm−1K−1超、特に好ましくは2000Wm−1K−1超の熱伝導率を有する、光学アセンブリ。
- 請求項1または2に記載の光学アセンブリであって、前記材料は多結晶および/または単結晶ダイヤモンドを含む、光学アセンブリ。
- 請求項1〜3のいずれか一項に記載の光学アセンブリであって、前記材料はカーボンナノチューブを含む、光学アセンブリ。
- 請求項1〜4のいずれか一項に記載の光学アセンブリであって、前記材料はCVDプロセスによって製造される、光学アセンブリ。
- 請求項1〜5のいずれか一項に記載の光学アセンブリであって、前記熱導電部品(6)は、500μm未満の厚さ(D)である、光学アセンブリ。
- 請求項1〜6のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)の前記材料は金属を含む、光学アセンブリ。
- 請求項7に記載の光学アセンブリであって、前記熱伝導部品(6)は電鋳法によって製造される、光学アセンブリ。
- 請求項1または2に記載の光学アセンブリであって、前記熱伝導部品(6)の前記材料は、好ましくは予備成形織布(56)を形成する、光学アセンブリ。
- 請求項9に記載の光学アセンブリであって、前記織布(56)は金属材料および/または炭素化合物を含む、光学アセンブリ。
- 請求項1〜10のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、前記光学素子(1)に接続される、光学アセンブリ。
- 請求項11に記載の光学アセンブリであって、前記熱伝導部品(6)は、表面領域に亘って、または孤立点において前記光学素子(1)に接続される、光学アセンブリ。
- 請求項11または12に記載の光学アセンブリであって、接続部(40,41)は、1000Wm−2K−1未満、好ましくは100Wm−2K−1未満の熱伝達係数を有する、光学アセンブリ。
- 請求項11〜13のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、1Wm−1K−1未満、好ましくは0.1Wm−1K−1未満の熱伝導率を有する材料(41)によって前記光学素子(1)に接続される、光学アセンブリ。
- 請求項11〜14のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、摩擦係止接続によって、特にクランプ接続(55)またはネジ接続によって、前記光学素子(1)に接続される、光学アセンブリ。
- 請求項1〜10のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、前記光学素子(7)から隔てて配置される、光学アセンブリ。
- 請求項16に記載の光学アセンブリであって、前記熱伝導部品(6)と前記光学素子(7)との間の距離(A)は、100μm〜1000μmである、光学アセンブリ。
- 請求項1〜17のいずれか一項に記載の光学アセンブリであって、前記光学素子は、レンズ、ミラー、平行平面板、および微細構造素子を含む群から選択される、光学アセンブリ。
- 請求項1〜18のいずれか一項に記載の光学アセンブリであって、前記光学素子(1,7)は、石英ガラス、結晶質石英、フッ化物群の結晶体、チタンドープされた石英ガラス、ガラスセラミック、特に銅あるいはアルミニウム等の金属、またはセラミックを含む群から選択される材料から形成される、光学アセンブリ。
- 請求項1〜19のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、少なくとも一側面上において熱源(42)に接続される、光学アセンブリ。
- 請求項20に記載の光学アセンブリであって、前記熱源は、電流が流れる部品(42)、特にアクチュエータまたはセンサである、光学アセンブリ。
- 請求項1〜21のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、少なくとも一側面上において、直接的または間接的にヒートシンク(46)に接続される、光学アセンブリ。
- 請求項22に記載の光学アセンブリであって、前記ヒートシンクは、ガスまたは液体が流れるクーラー(46)である、光学アセンブリ。
- 請求項1〜23のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、前記光学アセンブリの動作中、少なくとも部分的領域において、放射(9,44)に曝露されており、かつ、前記放射(9,44)を吸収するように設計される、光学アセンブリ。
- 請求項1〜24のいずれか一項に記載の光学アセンブリであって、前記熱伝導部品(6)は、前記光学アセンブリ(10)の動作中、少なくとも部分的領域において、蒸発液(22)に曝露される、光学アセンブリ。
- 請求項25に記載の光学アセンブリであって、前記液体は、前記光学素子(1)と曝露される基板(17)との間に導入される液浸流体(22)である、光学アセンブリ。
- 光学アセンブリ、特にマイクロリソグラフィ(10)用の投影露光装置であって、感光基板(17)を配置するための装置(60)と、500Wm−1K−1超の熱伝導率を有する材料を含み、および/または、ミリメートル単位での前記熱伝導部品(6)の厚さ(D)と、前記熱伝導部品(6)の材料の熱伝導率(λ)との積について、Dλ>1Wmm m−1K−1、好ましくはDλ>10Wmm m−1K−1、特にDλ>50Wmm m−1K−1が適用される熱伝導部品(6)とを備え、前記熱伝導部品(6)は、前記装置(60)上に、特に前記装置(60)の上側(64)に取り付けられている、光学アセンブリ。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11415893B2 (en) | 2017-10-30 | 2022-08-16 | Asml Holding N. V. | Assembly for use in semiconductor photolithography and method of manufacturing same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016086983A1 (de) | 2014-12-03 | 2016-06-09 | Carl Zeiss Smt Gmbh | Optische anordnung mit einem wärmeleitenden bauelement |
US10295819B1 (en) * | 2018-03-22 | 2019-05-21 | Corning Incorporated | Naphtyl based high index hydrophobic liquids and transmission recovery agents for liquid lens formulations |
DE102019101972A1 (de) * | 2019-01-28 | 2020-07-30 | HELLA GmbH & Co. KGaA | Verfahren zum Beschichten und Fügen von Bauteilen |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004343116A (ja) * | 2003-05-13 | 2004-12-02 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法、およびそれにより製造されたデバイス |
JP2007208240A (ja) * | 2005-12-30 | 2007-08-16 | Asml Netherlands Bv | 基板テーブル、基板位置の測定方法、およびリソグラフィ装置 |
JP2012129319A (ja) * | 2010-12-14 | 2012-07-05 | Nikon Corp | 反射光学素子、光学ユニット、露光装置及びデバイスの製造方法 |
WO2012152661A1 (en) * | 2011-05-10 | 2012-11-15 | Element Six N.V. | Composite diamond assemblies |
JP2014132694A (ja) * | 2008-06-10 | 2014-07-17 | Asml Netherlands Bv | 光学要素を熱調整する方法およびシステム |
JP2014168095A (ja) * | 2006-05-09 | 2014-09-11 | Carl Zeiss Smt Gmbh | 光学結像装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2278402B1 (en) | 2003-08-26 | 2013-03-06 | Nikon Corporation | Exposure apparatus |
JP2005295762A (ja) | 2004-04-05 | 2005-10-20 | Canon Inc | ステージ装置および露光装置 |
DE102004060184A1 (de) | 2004-12-14 | 2006-07-06 | Carl Zeiss Smt Ag | EUV-Spiegelanordnung |
EP1708255A3 (en) | 2005-03-28 | 2010-08-25 | Sumitomo Electric Industries, Ltd. | Diamond substrate and manufacturing method thereof |
US7626681B2 (en) | 2005-12-28 | 2009-12-01 | Asml Netherlands B.V. | Lithographic apparatus and method |
EP2062098B1 (en) | 2006-09-12 | 2014-11-19 | Carl Zeiss SMT GmbH | Optical arrangement for immersion lithography |
US20080138631A1 (en) | 2006-12-06 | 2008-06-12 | International Business Machines Corporation | Method to reduce mechanical wear of immersion lithography apparatus |
DE102009009221A1 (de) | 2009-02-17 | 2010-08-26 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem |
JP2010251745A (ja) | 2009-04-10 | 2010-11-04 | Asml Netherlands Bv | 液浸リソグラフィ装置及びデバイス製造方法 |
DE102009035788B4 (de) | 2009-07-31 | 2011-06-30 | Carl Zeiss Laser Optics GmbH, 73447 | Optische Anordnung in einem optischen System, insbesondere einer Beleuchtungseinrichtung |
NL2007834A (en) * | 2010-12-23 | 2012-06-27 | Asml Netherlands Bv | Lithographic apparatus and removable member. |
DE102011050192A1 (de) * | 2011-05-06 | 2012-11-08 | Aesculap Ag | Chirurgisches Kupplungssystem und chirurgisches Antriebssystem |
DE102011088623A1 (de) | 2011-12-14 | 2013-01-03 | Carl Zeiss Smt Gmbh | Optisches Element mit thermischer Isolierung, Projektionsobjektiv und Projektionsbelichtungsanlage damit |
DE102011088846A1 (de) | 2011-12-16 | 2013-06-20 | Carl Zeiss Smt Gmbh | Optische Anordnung und optisches Element für die Immersionslithographie |
EP2820173B1 (en) * | 2012-02-29 | 2022-08-24 | RFHIC Corporation | Template for gallium-nitride-on-diamond wafer deposition |
WO2016086983A1 (de) | 2014-12-03 | 2016-06-09 | Carl Zeiss Smt Gmbh | Optische anordnung mit einem wärmeleitenden bauelement |
-
2014
- 2014-12-03 WO PCT/EP2014/076366 patent/WO2016086983A1/de active Application Filing
- 2014-12-03 JP JP2017529616A patent/JP6502498B2/ja active Active
-
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- 2017-05-25 US US15/604,837 patent/US10509336B2/en active Active
-
2019
- 2019-12-03 US US16/701,480 patent/US11194119B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004343116A (ja) * | 2003-05-13 | 2004-12-02 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法、およびそれにより製造されたデバイス |
JP2007208240A (ja) * | 2005-12-30 | 2007-08-16 | Asml Netherlands Bv | 基板テーブル、基板位置の測定方法、およびリソグラフィ装置 |
JP2014168095A (ja) * | 2006-05-09 | 2014-09-11 | Carl Zeiss Smt Gmbh | 光学結像装置 |
JP2014132694A (ja) * | 2008-06-10 | 2014-07-17 | Asml Netherlands Bv | 光学要素を熱調整する方法およびシステム |
JP2012129319A (ja) * | 2010-12-14 | 2012-07-05 | Nikon Corp | 反射光学素子、光学ユニット、露光装置及びデバイスの製造方法 |
WO2012152661A1 (en) * | 2011-05-10 | 2012-11-15 | Element Six N.V. | Composite diamond assemblies |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11415893B2 (en) | 2017-10-30 | 2022-08-16 | Asml Holding N. V. | Assembly for use in semiconductor photolithography and method of manufacturing same |
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