JP2017531407A - 電力増幅器において供給感度を低減するための回路および方法 - Google Patents

電力増幅器において供給感度を低減するための回路および方法 Download PDF

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Publication number
JP2017531407A
JP2017531407A JP2017521136A JP2017521136A JP2017531407A JP 2017531407 A JP2017531407 A JP 2017531407A JP 2017521136 A JP2017521136 A JP 2017521136A JP 2017521136 A JP2017521136 A JP 2017521136A JP 2017531407 A JP2017531407 A JP 2017531407A
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Japan
Prior art keywords
power amplifier
transistor
coupled
stage
supply voltage
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Ceased
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JP2017521136A
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English (en)
Japanese (ja)
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JP2017531407A5 (OSRAM
Inventor
スクデリ、アントニーノ
ハドジクリストス、アリストテール
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Qualcomm Inc
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Qualcomm Inc
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Publication of JP2017531407A5 publication Critical patent/JP2017531407A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/007—Control dependent on the supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/231—Indexing scheme relating to amplifiers the input of an amplifier can be switched on or off by a switch to amplify or not an input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/234—Indexing scheme relating to amplifiers the input amplifying stage being one or more operational amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/249—A switch coupled in the input circuit of an amplifier being controlled by a circuit, e.g. feedback circuitry being controlling the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/252—Multiple switches coupled in the input circuit of an amplifier are controlled by a circuit, e.g. feedback circuitry being controlling the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/321—Use of a microprocessor in an amplifier circuit or its control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/366—Multiple MOSFETs are coupled in parallel
    • H—ELECTRICITY
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    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/42—Indexing scheme relating to amplifiers the input to the amplifier being made by capacitive coupling means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/432—Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/522—Indexing scheme relating to amplifiers the bias or supply voltage or current of the gate side of a FET amplifier being controlled to be on or off by a switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/61—Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21136—An input signal of a power amplifier being on/off switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
    • H—ELECTRICITY
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    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21178—Power transistors are made by coupling a plurality of single transistors in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2017521136A 2014-10-20 2015-10-13 電力増幅器において供給感度を低減するための回路および方法 Ceased JP2017531407A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/518,967 2014-10-20
US14/518,967 US9473081B2 (en) 2014-10-20 2014-10-20 Circuits and methods for reducing supply sensitivity in a power amplifier
PCT/US2015/055369 WO2016064625A1 (en) 2014-10-20 2015-10-13 Circuits and methods for reducing supply sensitivity in a power amplifier

Publications (2)

Publication Number Publication Date
JP2017531407A true JP2017531407A (ja) 2017-10-19
JP2017531407A5 JP2017531407A5 (OSRAM) 2018-11-08

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Country Link
US (1) US9473081B2 (OSRAM)
EP (1) EP3210298A1 (OSRAM)
JP (1) JP2017531407A (OSRAM)
CN (1) CN106797203A (OSRAM)
WO (1) WO2016064625A1 (OSRAM)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
WO2019221175A1 (ja) * 2018-05-17 2019-11-21 株式会社村田製作所 増幅回路
JP2020129722A (ja) * 2019-02-07 2020-08-27 株式会社東芝 高周波増幅回路
WO2021117375A1 (ja) * 2019-12-10 2021-06-17 株式会社村田製作所 増幅回路

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US10181820B2 (en) * 2016-05-17 2019-01-15 Skyworks Solutions, Inc. Power amplification system with envelope-based bias
US10923442B2 (en) * 2017-03-10 2021-02-16 Drexel University Protecting analog circuits with parameter biasing obfuscation
CN109217831B (zh) * 2017-06-29 2022-05-10 爱思开海力士有限公司 具有分裂长度补偿方案的放大电路
US12609661B2 (en) * 2021-10-14 2026-04-21 Skyworks Solutions, Inc. Output stage circuit assembly for power amplifier system with improved power management

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JP2000201027A (ja) * 1999-01-08 2000-07-18 Nec Corp 高効率増幅器
JP2009207030A (ja) * 2008-02-29 2009-09-10 Nippon Telegr & Teleph Corp <Ntt> 電力増幅回路および無線通信回路
JPWO2008068809A1 (ja) * 2006-11-30 2010-03-11 三菱電機株式会社 高周波増幅器
JPWO2008075561A1 (ja) * 2006-12-19 2010-04-08 三菱電機株式会社 電力増幅装置
JP2012004821A (ja) * 2010-06-16 2012-01-05 Panasonic Corp 高周波増幅器
JP2012521670A (ja) * 2009-03-19 2012-09-13 クゥアルコム・インコーポレイテッド 保護回路を有するカスコード増幅器
JP2012244251A (ja) * 2011-05-16 2012-12-10 Fujitsu Ltd 増幅器、送信装置および増幅器制御方法
US20140184337A1 (en) * 2012-12-28 2014-07-03 Peregrine Semiconductor Corporation Control Systems and Methods for Power Amplifiers Operating in Envelope Tracking Mode

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US8514015B2 (en) * 2008-12-10 2013-08-20 Qualcomm, Incorporated Amplifier with programmable off voltage
CN101527545A (zh) * 2009-04-17 2009-09-09 京信通信系统（中国）有限公司 Doherty包络跟踪功率放大器及处理射频信号的方法
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US8150343B2 (en) * 2009-09-21 2012-04-03 Broadcom Corporation Dynamic stability, gain, efficiency and impedance control in a linear/non-linear CMOS power amplifier
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KR20150054792A (ko) 2012-09-10 2015-05-20 이노바라디오 에스.에이. 클래스-ａｂ 전력 증폭기의 전력 손실을 감소시키기 위한 고-주파 드레인 전력 공급기
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JP2000201027A (ja) * 1999-01-08 2000-07-18 Nec Corp 高効率増幅器
JPWO2008068809A1 (ja) * 2006-11-30 2010-03-11 三菱電機株式会社 高周波増幅器
JPWO2008075561A1 (ja) * 2006-12-19 2010-04-08 三菱電機株式会社 電力増幅装置
JP2009207030A (ja) * 2008-02-29 2009-09-10 Nippon Telegr & Teleph Corp <Ntt> 電力増幅回路および無線通信回路
JP2012521670A (ja) * 2009-03-19 2012-09-13 クゥアルコム・インコーポレイテッド 保護回路を有するカスコード増幅器
JP2012004821A (ja) * 2010-06-16 2012-01-05 Panasonic Corp 高周波増幅器
JP2012244251A (ja) * 2011-05-16 2012-12-10 Fujitsu Ltd 増幅器、送信装置および増幅器制御方法
US20140184337A1 (en) * 2012-12-28 2014-07-03 Peregrine Semiconductor Corporation Control Systems and Methods for Power Amplifiers Operating in Envelope Tracking Mode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019221175A1 (ja) * 2018-05-17 2019-11-21 株式会社村田製作所 増幅回路
US11342891B2 (en) 2018-05-17 2022-05-24 Murata Manufacturing Co., Ltd. Amplifier circuit
JP2020129722A (ja) * 2019-02-07 2020-08-27 株式会社東芝 高周波増幅回路
JP7185548B2 (ja) 2019-02-07 2022-12-07 株式会社東芝 高周波増幅回路
WO2021117375A1 (ja) * 2019-12-10 2021-06-17 株式会社村田製作所 増幅回路
US12445095B2 (en) 2019-12-10 2025-10-14 Murata Manufacturing Co., Ltd. Amplification circuit

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US20160112018A1 (en) 2016-04-21
WO2016064625A1 (en) 2016-04-28
US9473081B2 (en) 2016-10-18
CN106797203A (zh) 2017-05-31
EP3210298A1 (en) 2017-08-30

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