JP2017531311A5 - - Google Patents
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- JP2017531311A5 JP2017531311A5 JP2017510574A JP2017510574A JP2017531311A5 JP 2017531311 A5 JP2017531311 A5 JP 2017531311A5 JP 2017510574 A JP2017510574 A JP 2017510574A JP 2017510574 A JP2017510574 A JP 2017510574A JP 2017531311 A5 JP2017531311 A5 JP 2017531311A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- cmp composition
- amino acid
- cmp
- composition comprises
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 21
- 150000001413 amino acids Chemical class 0.000 claims description 11
- 229920003169 water-soluble polymer Polymers 0.000 claims description 8
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 7
- 125000003368 amide group Chemical group 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- SEQKRHFRPICQDD-UHFFFAOYSA-N N-tris(hydroxymethyl)methylglycine Chemical compound OCC(CO)(CO)[NH2+]CC([O-])=O SEQKRHFRPICQDD-UHFFFAOYSA-N 0.000 claims description 4
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 claims description 4
- 229920006317 cationic polymer Polymers 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- OGNCVVRIKNGJHQ-UHFFFAOYSA-N 4-(3-pyridin-4-ylpropyl)pyridine Chemical compound C=1C=NC=CC=1CCCC1=CC=NC=C1 OGNCVVRIKNGJHQ-UHFFFAOYSA-N 0.000 claims description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004475 Arginine Substances 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 239000004471 Glycine Substances 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 2
- 239000004472 Lysine Substances 0.000 claims description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- UZMAPBJVXOGOFT-UHFFFAOYSA-N Syringetin Natural products COC1=C(O)C(OC)=CC(C2=C(C(=O)C3=C(O)C=C(O)C=C3O2)O)=C1 UZMAPBJVXOGOFT-UHFFFAOYSA-N 0.000 claims description 2
- 239000007997 Tricine buffer Substances 0.000 claims description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 2
- 229940000635 beta-alanine Drugs 0.000 claims description 2
- 125000002091 cationic group Chemical group 0.000 claims description 2
- 239000008119 colloidal silica Substances 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- KCFYHBSOLOXZIF-UHFFFAOYSA-N dihydrochrysin Natural products COC1=C(O)C(OC)=CC(C2OC3=CC(O)=CC(O)=C3C(=O)C2)=C1 KCFYHBSOLOXZIF-UHFFFAOYSA-N 0.000 claims description 2
- YIOJGTBNHQAVBO-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)azanium Chemical compound C=CC[N+](C)(C)CC=C YIOJGTBNHQAVBO-UHFFFAOYSA-N 0.000 claims description 2
- GQOKIYDTHHZSCJ-UHFFFAOYSA-M dimethyl-bis(prop-2-enyl)azanium;chloride Chemical compound [Cl-].C=CC[N+](C)(C)CC=C GQOKIYDTHHZSCJ-UHFFFAOYSA-M 0.000 claims description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- 239000003112 inhibitor Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 125000001302 tertiary amino group Chemical group 0.000 claims description 2
- RRHXZLALVWBDKH-UHFFFAOYSA-M trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)OCC[N+](C)(C)C RRHXZLALVWBDKH-UHFFFAOYSA-M 0.000 claims description 2
- 239000004474 valine Substances 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical group 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 235000001014 amino acid Nutrition 0.000 description 6
- HKEOCEQLCZEBMK-BQYQJAHWSA-N 2-[(e)-2-pyridin-2-ylethenyl]pyridine Chemical group C=1C=CC=NC=1/C=C/C1=CC=CC=N1 HKEOCEQLCZEBMK-BQYQJAHWSA-N 0.000 description 1
- DQRKTVIJNCVZAX-UHFFFAOYSA-N 4-(2-pyridin-4-ylethyl)pyridine Chemical compound C=1C=NC=CC=1CCC1=CC=NC=C1 DQRKTVIJNCVZAX-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/308,587 | 2014-08-22 | ||
| US14/308,587 US20160053381A1 (en) | 2014-08-22 | 2014-08-22 | Germanium chemical mechanical polishing |
| PCT/US2015/036222 WO2016028370A1 (en) | 2014-08-22 | 2015-06-17 | Germanium chemical mechanical polishing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017531311A JP2017531311A (ja) | 2017-10-19 |
| JP2017531311A5 true JP2017531311A5 (enrdf_load_stackoverflow) | 2018-06-28 |
| JP6603309B2 JP6603309B2 (ja) | 2019-11-06 |
Family
ID=55347801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017510574A Active JP6603309B2 (ja) | 2014-08-22 | 2015-06-17 | ゲルマニウムの化学機械研磨 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20160053381A1 (enrdf_load_stackoverflow) |
| JP (1) | JP6603309B2 (enrdf_load_stackoverflow) |
| KR (1) | KR102444550B1 (enrdf_load_stackoverflow) |
| CN (1) | CN106574171B (enrdf_load_stackoverflow) |
| TW (1) | TWI572687B (enrdf_load_stackoverflow) |
| WO (1) | WO2016028370A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| JP2021089906A (ja) * | 2018-03-22 | 2021-06-10 | 株式会社フジミインコーポレーテッド | ゲルマニウム溶解抑制剤 |
| US10676647B1 (en) * | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| JP7409899B2 (ja) * | 2020-02-18 | 2024-01-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法、および半導体基板の製造方法 |
| KR102455159B1 (ko) * | 2020-07-17 | 2022-10-18 | 주식회사 케이씨텍 | 금속막 연마용 슬러리 조성물 |
| KR20220130544A (ko) * | 2021-03-18 | 2022-09-27 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| CN115516605A (zh) * | 2021-04-20 | 2022-12-23 | 昭和电工材料株式会社 | Cmp研磨液及研磨方法 |
| WO2023049317A1 (en) * | 2021-09-23 | 2023-03-30 | Cmc Materials, Inc. | Silica-based slurry compositions containing high molecular weight polymers for use in cmp of dielectrics |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007012638A (ja) * | 2003-10-01 | 2007-01-18 | Asahi Kasei Chemicals Corp | 金属用研磨組成物 |
| WO2006030595A1 (ja) * | 2004-09-14 | 2006-03-23 | Hitachi Chemical Company, Ltd. | Ｃｍｐ用研磨スラリー |
| US8137580B2 (en) * | 2006-12-29 | 2012-03-20 | Lg Chem, Ltd. | CMP slurry composition for forming metal wiring line |
| US7678605B2 (en) * | 2007-08-30 | 2010-03-16 | Dupont Air Products Nanomaterials Llc | Method for chemical mechanical planarization of chalcogenide materials |
| US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
| US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
| KR101396232B1 (ko) * | 2010-02-05 | 2014-05-19 | 한양대학교 산학협력단 | 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법 |
| US20120190200A1 (en) * | 2011-01-24 | 2012-07-26 | Clarkson University | Abrasive Free Silicon Chemical Mechanical Planarization |
| KR20140059216A (ko) * | 2011-08-01 | 2014-05-15 | 바스프 에스이 | 특정 유기 화합물을 포함하는 CMP 조성물의 존재하에서 원소 게르마늄 및/또는 Si₁ｘGeｘ 재료의 화학적 기계적 연마를 포함하는 반도체 디바이스의 제조 방법 |
| JP2013080751A (ja) * | 2011-09-30 | 2013-05-02 | Fujimi Inc | 研磨用組成物 |
| JP6132315B2 (ja) * | 2012-04-18 | 2017-05-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
-
2014
- 2014-08-22 US US14/308,587 patent/US20160053381A1/en not_active Abandoned
-
2015
- 2015-05-15 TW TW104115644A patent/TWI572687B/zh active
- 2015-06-17 KR KR1020177007354A patent/KR102444550B1/ko active Active
- 2015-06-17 WO PCT/US2015/036222 patent/WO2016028370A1/en active Application Filing
- 2015-06-17 JP JP2017510574A patent/JP6603309B2/ja active Active
- 2015-06-17 CN CN201580045242.5A patent/CN106574171B/zh not_active Expired - Fee Related
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